Technologies

RF

Achieve ultra-efficient connectivity across high-speed and wireless devices. Our RF portfolio delivers optimized performance, power efficiency and signal integrity across consumer, infrastructure and connectivity RF applications. With continued innovation, we push the boundaries of RF performance to support the evolution of 5G and next-generation AI-driven connectivity demands.

Delivering leading RF performance, signal power & reliability

  • High efficiency

    Optimized performance and signal integrity across sub-6GHz to mmWave frequencies

  • Integration flexibility

    From RF-SOI for highly integrated front ends, GaN-on-silicon (GaN-on-Si) for high power RF, to tightly integrated RF, analog and digital designs with SiGe BiCMOS

  • High frequency & bandwidth

    RF technologies with mmWave optimized back-end-of-line (BEOL) for select RF-SOI technologies, industry-leading ft/fmax in SiGe and wide bandgap RF GaN

  • Application versatility

    From powering premium smartphones, satellite terminals, high-speed networking in data centers and advanced radar and sensing systems

  • Innovative RF solutions

    Pushing the bounds of RF performance from RF-SOI 3D integration (3DI) for area efficiency, advanced SiGe BiCMOS architectures to novel GaN materials

  • Diversified manufacturing

    Multi-site manufacturing for RF-SOI and SiGe technologies in the U.S. and Singapore and trusted U.S. manufacturing for RF GaN at our Burlington, Vermont facility

Featured technologies

  • RF GaN

    Leveraging GaN-on-silicon (GaN-on-Si) integration, we harness GaN’s wide-bandgap advantages to deliver powerful, efficient RF solutions in smaller form factors at commercial scale for power amplifiers, SATCOM systems and broad frequency RF applications.
    Learn more: RF GaN

  • RF-SOI

    Our proven partially depleted RF-SOI technologies are optimized for low RF loss, high linearity for RF switching and tuning and highly integrated front-end capability, enabling low-loss, highly integrated RF front-end designs at scale.
    Learn more: RF-SOI

  • SiGe

    Our high-performance SiGe BiCMOS technologies deliver the perfect balance of performance and power efficiency. With industry-leading ft/fmax and integrated RF, analog and digital capability, our SiGe solutions enable exceptional speed, linearity and signal integrity for wireless, optical and infrastructure applications.
    Learn more: SiGe

Scale your designs with our trusted partner ecosystem

Access our global partner ecosystem with validated IP, EDA and design services expertise across our RF process technologies to accelerate development from concept to production.

  • ASIC North
  • Falcomm
  • Verisilicon
  • Siemens
  • Cadence
  • Synopsys
  • EnSilica
  • Innosilicon
  • CoreHW
  • Trusted Semi
  • WeASIC
  • Keysight
View all partners
RF

Frequently asked questions

We offer a comprehensive RF portfolio designed to match different performance, power and integration needs, depending on your application priority.

  • RF-SOI delivers low-loss, high-linearity and low-noise RF performance at scale for RF switching and tuning in mobile and connectivity applications.
  • SiGe provides the perfect balance of performance and power efficiency for high frequency, high speed analog and mixed signal designs.
  • RF GaN enables high power, high efficiency RF performance for demanding wireless infrastructure and sensing applications.

Yes. We offer MPW prototyping across all of our technology platforms, including RF-SOI, SiGe and RF GaN.

Learn more about our GlobalShuttle™ MPW program and view upcoming schedules.

Our RF technologies are supported by a diversified, multi-site manufacturing footprint:

  • RF-SOI: Multi‑site manufacturing across our facilities in Malta, Burlington and Singapore
  • SiGe: Multi‑site manufacturing across our facilities in Malta, Burlington and Singapore
  • RF GaN: Trusted U.S. manufacturing at our Burlington facility

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