Technologies

Power

Spanning silicon-based Bipolar-CMOS-DMOS (BCD) platforms and novel materials such as gallium nitride (GaN), our power portfolio is engineered for high power density, efficient energy conversion and design flexibility. Together, this enables scalable power architectures for demanding consumer and industrial applications – from battery-powered devices to fully electrified systems – supporting the next generation of smarter, more energy-efficient products.

Power density & efficiency, with integrated reliability

  • Reliable performance & efficiency

    High power density and efficient energy conversion, featuring scalable BCD voltage support (5V–150V) deep-trench isolation up to 200V to minimize losses

  • Innovation through integration

    Co-integration of GaN and BCD on a single chip, complemented by embedded memory options to support compact, high-efficiency power ICs

  • Reduced metallization overhead

    Bond-over-active copper pillars for BCD and copper back-end-of-line (BEOL) for power GaN reduce routing overhead while improving power density and thermal performance

  • Automotive grade reliability

    Support for multiple qualification options, including Auto Grade 0 (up to 175°C) and Auto Grade 1 (up to 150°C), delivering dependable performance in harsh operating environments

  • Modularity across voltage & power

    Solutions spanning low to high-voltage operation, enabling design freedom from simple PMICs to complex power management and motor control systems within a unified platform

  • Diversified manufacturing

    Multi-site BCD manufacturing across the U.S., Germany and Singapore, with trusted U.S. GaN manufacturing at our Burlington, Vermont facility

Featured technologies

  • BCD

    By integrating analog, digital and power devices, our BCD technologies deliver efficient mixed–signal power ICs with scalable low to high–voltage operation, integrated passives and embedded memory to enable longer battery life, faster charging and flexible power architectures.  
    Learn more: BCD

  • Power GaN

    Leveraging the wide–bandgap advantages of gallium nitride, our power GaN technologies deliver high power density and high–efficiency power conversion with lower losses and faster switching, supported by flexible PDKs and integration options optimized for next–generation power systems.  
    Learn more: Power GaN

Scale your designs with our trusted partner ecosystem

Power your next design innovation by partnering with our global partner network that is validated across our BCD and power GaN technologies, matched to your design and application needs.

  • Analog Bits
  • Synopsys
  • eMemory
  • VeriSilicon
  • Siemens
  • Cadence
  • EnSilica
  • Presto
  • Innosilicon
  • Keysight
  • CoreHW
  • Photeon
View all partners
Power

Frequently asked 
questions

  • Our BCD technologies are manufactured at 300mm across our Malta, Dresden and Singapore facilities, with additional 200mm manufacturing in Burlington and Singapore.
  • Our power GaN technologies are manufactured at our trusted 200mm facility in Burlington.

Our BCD devices are qualified to meet rigorous automotive standards (Auto Grades 0 and 1), with both BCD and GaN qualified to JEDEC and data center/industrial standards*.

*Certifications may vary by process technology

  • Our BCD technologies support 5V to 150V operation, with high-voltage BCD solutions incorporating deep trench isolation up to 200V.
  • Our developing power GaN portfolio is positioned to offer medium and high-voltage power conversion to deliver solutions for consumer and industrial power applications.

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