Technologies

RF GaN

Unlock increased RF output power and efficiency with our RF GaN process technologies, delivering cost-optimized, high-power density and performance at a smaller form factor.

Powering the revolution of wireless connectivity with RF GaN

The number of connected devices is growing and data traffic is accelerating. Wide-bandgap materials such as gallium nitride (GaN) enable higher RF power, efficiency and frequency operation across demanding applications. Our RF GaN technologies are uniquely positioned to translate GaN’s intrinsic advantages into commercially viable solutions and overcome the limitations of existing infrastructure.

  • GaN-on-Si advantage

    We uniquely leverage GaN-on-silicon (GaN-on-Si) integration to unlock GaN’s commercial potential- enabling cost-effective, high-volume manufacturing.

  • High RF performance

    Excellent gain and efficiency across FR1 and FR3 frequency bands enables high-performance, power-optimized solutions for both D-mode and E-mode devices.

  • High power density

    Our RF GaN offers superior performance RF for both D-mode and E-mode devices, empowering designers to optimize output power, efficiency and linearity.

  • Thermal reliability

    Engineered to address thermal performance challenges inherent in high-power RF operation, supporting sustained performance in demanding applications.

  • Trusted U.S. manufacturing

    Home to industry-leading RF-SOI and SiGe technologies, our accredited Burlington, Vermont facility offers time-tested robust process controls and advanced copper backend integration.

  • Backed by proven RF leadership

    Building on our decades of RF expertise, our RF GaN technology offers robust PDKs with RF models, GlobalShuttle™ MPW program runs and dedicated tapeouts.

RF GaN technologies at-a-glance

We are developing a comprehensive RF GaN portfolio targeting low and high voltage applications. Engineered for harsh environments, our RF GaN technologies deliver outstanding RF performance and power density through scalable options that meet diverse RF requirements across consumer and industrial applications.

Our higher-voltage RF GaN technology engineered for D-mode devices is optimized for high-power wireless infrastructure applications – delivering up to 5W/mm power efficiency, up to 70% PAE and 12–28V operation across 1–15GHz.

Our lower-voltage RF GaN technology designed for E-mode devices in partnership with Finwave Semiconductor is optimized for smart mobile and consumer RF applications.

RF GaN applications

Aerospace & defense

High power density, strong thermal efficiency, ruggedness and radiation-resilient variants enable radar and satellite communications (SATCOM)

Learn more: Aerospace & defense

Smart mobile devices

Low-voltage and E-mode RF GaN is well positioned to support high-frequency, high-efficiency power amplifiers (PAs) to enable next-generation mobile connectivity

Learn more: Smart mobile devices
RF GaN

Frequently asked questions

RF GaN offers superior survivability in demanding environments and delivers higher power density, efficiency and thermal performance, enabling fewer devices to deliver the same output power with a smaller footprint.

For RF applications, GaN offers higher power density and efficiency at higher frequencies – enabling smaller, lighter and power-efficient RF designs.

Our RF GaN technology is built on GaN-on-Si using gold-free, CMOS-compatible processes to enable scalable manufacturing and seamless integration with silicon ecosystems. This unique integration supports high-volume commercial production, cost-efficiency and compatibility with our proven RF manufacturing infrastructure.

We offer both high-voltage D-mode and low-voltage E-mode RF GaN options to address infrastructure-class and consumer-grade RF applications. This voltage flexibility allows designers to select the optimal RF GaN solution based on their power, efficiency and system requirements.

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