Just as the proliferation of AI is driving data center growth, the rising demand of mobile data traffic is driving next-generation wireless communications systems. Across SATCOM, aerospace, defense and communications infrastructure, next-generation RF systems must deliver higher output power, wider bandwidth and increased efficiency while simultaneously reducing system size, cost and complexity. The innovative engine of the semiconductor industry is rising to this systems challenge.
At the center of this opportunity is RF gallium nitride (GaN). At GF, RF GaN is evolving from a specialized high-performance technology into a large-scale, commercially viable platform. Our GaN-on-silicon (GaN-on-Si) approach combines the performance advantages of GaN with the cost advantages and volume of 200mm silicon manufacturing—a critical step toward the broader adoption of GaN solutions that will revolutionize next-generation connectivity.
Meeting the demands of next-generation RF systems
Modern wireless and sensing systems must operate across increasingly wide frequency ranges, from sub-6GHz to millimeter wave, while balancing power efficiency, signal integrity and integration.
This is particularly evident in:
- – Satellite communications, where transmitters and compact user terminals demand higher RF output power and efficiency with lower system cost
- – Aerospace and defense, where signal performance and reliability across long-range transmissions in extreme environments are critical
- – Communications infrastructure, where higher bandwidth and power efficiency in active antenna systems are required to support growing data demand
Through our unique GaN-on-Si technology, we empower customers to harness GaN’s wide bandgap advantages, high power density and efficiency to unlock the true potential of GaN beyond niche applications – circumventing the limitations of existing infrastructure and enabling networks to operate with greater bandwidth at higher frequencies.
Performance where it counts: Power, efficiency and reliability in harsh and mission-critical environments
Our RF GaN technology is engineered for high-power RF applications, with strong measured results:
- – Up to 5 W/mm output power density and 70% power added efficiency (PAE) for high-voltage RF applications
- – High gain and efficiency across wide frequency ranges, including FR1 and FR3 bands ( 1 to 15 GHz)
- – High efficiency reduces cumulative thermal load at the module level
- – Advanced RF back-end-of-line (BEOL) with multi-layer metal wiring, capacitors and thin-film resistor options provide additional flexibility to designers
- – Multi-layer BEOL passivation is moisture-resistant and provides exceptional protection from harsh environments and extends device lifetime
- – GaN-on-Si is gold-free and arsenic-free, presenting a more environmentally sustainable and cost-effective long-term solution
At the device level, RF GaN benefits from low on-resistance, high drain current density and stable operation across low and high-voltage conditions, boosting efficiency and reducing overall power consumption.
Introducing RFGaN1: Higher-voltage, optimized for D-mode devices
Today, we are excited to share the production readiness of our 130nm RF GaN technology, RFGaN1, our first RF GaN technology to be qualified for volume production. The high-voltage RFGaN1 platform is our optimized solution for high-power wireless infrastructure applications, including power amplifiers, driver amplifiers and high-power RF switches for satellite communications, cellular infrastructure and the aerospace and defense market.
RF GaN’s inherent material properties enable robust operation and superior survivability in demanding environments. Our RFGaN1 technology extends these advantages with depletion-mode (D-mode) devices operating 12-28V for sustained high output power without thermal runway and high-power density that reduces cumulative thermal load at the module level. These attributes are critical for aerospace, defense and satellite communication systems, enabling key applications such as phased-array radars, SATCOM payloads and ground terminals.
Customers like Falcomm and Otava RF are using our RFGan1 technology today to deliver innovative solutions for next generation RF systems:
“Falcomm is excited to see GlobalFoundries launch their RFGaN1 platform, an important milestone for the industry that breaks down the barriers of deploying RF GaN technology at scale. GF’s high-performance, domestically sourced RF GaN-on-Si technology is critical to unlocking the next generation of Falcomm’s energy-efficient RF power amplifiers for defense, space and critical infrastructure.”
“GlobalFoundries’ RFGaN1 platform provides a powerful foundation for the future of adaptive RF systems, delivering the performance and efficiency required for advanced front-ends in the critical defense, 5G/6G and satellite communications markets we serve. Our partnership brings together world-class semiconductor manufacturing and breakthrough RF innovation to deliver solutions that redefine what is possible in contested spectrum environments. Together, Otava RF and GF are enabling a new generation of agile, high-performance communications and sensing capabilities at scale.”
A practical path to RF GaN adoption with trusted manufacturing expertise
For RF designers, one of the key barriers to adopting GaN has historically been access and manufacturability. Our RF GaN platform addresses the access gap with early-access programs and GlobalShuttle MPW™ (multi-project wafer) program runs for cost-effective prototyping and validation. With the support of our existing RF design infrastructure and GlobalSolutions™ partner ecosystem, we provide comprehensive, end-to-end support through every step of the design and manufacturing process.
Another important piece of our differentiated RF GaN offering is our longstanding high-volume manufacturing expertise, particularly in RF technologies, through our 200mm fab in Burlington, Vermont. As an Accredited Trusted Foundry, our Burlington facility meets the strict requirements and assurances for manufacturing uncompromised chips used in aerospace and defense systems by the U.S. government.
Together, these elements provide a practical path to integrating GaN into real-world systems, from early evaluation through production.
Bringing GaN to scale for next-generation RF systems
RF system requirements across aerospace, defense and communications infrastructure are evolving rapidly, driven by the need for higher power, wider bandwidth and more integrated architectures. GlobalFoundries’ RF GaN platform and high-volume manufacturing expertise deliver a scalable solution to overhaul these existing systems with the power density and efficiency to tackle the most demanding RF applications.
RF GaN is no longer just a performance technology—it is becoming a scalable foundation for next-generation RF systems.
To learn more about our RF GaN platform and other advanced RF solutions, visit our GF booth (#21018) at the International Microwave Symposium (IMS 2026), happening June 9-11 in Boston, Massachusetts.
By Dan Denninghoff, Senior Director, RF GaN Product Line
