GF’s high-performance silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technologies are uniquely optimized for either power amplifier applications or very high-frequency applications for optical and wireless networking, satellite communications and communications infrastructure. The silicon-proven SiGe solutions enable customers to maximize performance, integrate extensive digital and RF functionality and exploit an economical silicon technology base. The SiGe technology platforms are performance-competitive with more costly compound semiconductor technologies while taking full advantage of being integrated with conventional silicon CMOS (Si CMOS). Highest fmax SiGe BiCMOS foundry process in volume production at 400GHz with a roadmap to 1THzSiGe PA successfully used in WiFi PAs for 10+ years with billions of parts shipped
