GF’s high-performance silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technologies are uniquely optimized for either power amplifier applications or very high-frequency applications for optical and wireless networking, satellite communications and communications infrastructure. The silicon-proven SiGe solutions enable customers to maximize performance, integrate extensive digital and RF functionality and exploit an economical silicon technology base. The SiGe technology platforms are performance-competitive with more costly compound semiconductor technologies while taking full advantage of being integrated with conventional silicon CMOS (Si CMOS).

  • Highest fmax SiGe BiCMOS foundry process in volume production at 400GHz with a roadmap to 1THz
  • SiGe PA successfully used in WiFi PAs for 10+ years with billions of parts shipped