Technologies

RF-SOI

Proven partially depleted RF‑SOI technologies optimized for low RF loss and high linearity in switching and tuning, enabling highly integrated, low‑loss RF front‑end designs at scale.

Boost RF performance, signal power & reliability with RF-SOI

As RF front-ends become more integrated, RF solutions that can maintain signal integrity within tight space constraints are critical. Our RF‑SOI technologies deliver low RF loss, strong signal isolation, high linearity for RF switching and tuning and highly integrated front‑end capability. Backed by high‑volume manufacturing and broad adoption, our RF‑SOI solutions enable efficient connectivity across extended signal ranges.

  • Low RF loss, strong signal isolation

    RF-SOI high-resistivity substrates and buried oxide advantage minimize RF losses and coupling for excellent signal integrity and isolation in dense, multi-band environments.

  • Highly integrated RF front-end capability

    GF RF-SOI enables compact, scalable integration of RF switches and front-end building blocks, supporting efficient RF front-end implementations from sub-6GHz and above* (*depending on RF-SOI process technology).

  • High linearity for RF switching & tuning

    Engineered substrates and isolated device architectures support high linearity and higher power handling for switches and tuning functions.

Industry-leading RF-SOI technologies

Explore our rich portfolio of established RF-SOI technologies that are designed to address diverse RF front-end integration, performance and application requirements.

Our XSW process technologies are optimized for high-performance RF switching, delivering low insertion loss and strong isolation for high-volume RF front-end modules. Enabled by optimized Ron·Coff through advanced switch architectures and device stacking, XSW supports scalable deployment in smart mobile and connectivity applications. The XSW family includes our established 8SW and latest-generation 9SW technologies, with advanced integration options such as SLATE™ wafer-to-wafer bonding technology on 9SW.

Our established 130NSX process technology enables integrated RF switch and LNA implementations optimized for extended-range RF operation and receiver sensitivity. Designed for Ku- and Ka-band front-ends, NSX supports LNAs and ground terminals where low-noise performance and link-budget preservation are critical, making it well suited for infrastructure and SATCOM receive-path applications.

Our mmWave process technologies are optimized for millimeter-wave (mmWave) RF front-end integration, purpose-built for FR2 5G, SATCOM, beamformers and phased-array architectures. GF mmWave technologies demonstrate mmWave benchmark performance at Ka-band frequencies and offer mmWave-optimized BEOL options to reduce parasitics and preserve high-frequency signal integrity, including established 45RF-SOI- and 45RFE technologies.

Reduce RF switch design area with SLATE™ wafer-to-wafer bonding technology

Our SLATE technology with 9SW enables advanced 3DI by vertically stacking FETs across bonded wafers, reducing RF switch area while maintaining the electrical performance required for modern front-end modules. With automated, PDK-driven design flows, designers can convert traditional 2D 9SW RF switch designs into compact 3D architectures without a ground-up redesign.

Watch the tutorial to see how you can reduce your RF switch design area by up to half by migrating your existing RF design from 9SW to SLATE technology with 9SW. Contact your GF representative to learn more about engagement opportunities and detailed tutorials explaining simulation and verification steps.

RF-SOI applications

Aerospace & defense

Support advanced satellite and terrestrial communications front-ends, radar and mmWave beamformers – enabling high-performance mmWave front-ends with strong signal integrity, well-suited for wireless, sensing and SATCOM systems where reliability and isolation are critical

Learn more: Aerospace & defense

Data center & communications infrastructure

Reliable RF performance and strong signal isolation enables scalable RF front-end deployment across communications infrastructure applications, including Wi-Fi and Bluetooth chipsets, cellular networks spanning LTE, 4G and 5G and SATCOM ground terminals and beamformers

Learn more: Data center & communications infrastructure

Smart mobile devices

Enable low‑power, high‑performance RF front ends for smart mobile devices, supporting cellular (5G) and Wi‑Fi RF front ends, RF switches, and antenna tuners. With broad adoption in premium smartphones, RF‑SOI enables compact integration, efficient RF switching and scalable front‑end architectures

Learn more: Smart mobile devices

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