A signature platform offering best in class performance.

GF’s proprietary FDX™ process technology platform, based on fully-depleted silicon-on-insulator technology, is incredibly well-suited for efficient single-chip integration of digital and analog signals, delivering cost-effective performance for connected and low-power embedded applications. In addition, a full range of features such as ultra-low-power, ultra-low leakage, RF and mmWave, embedded  non-volatile memory  and automotive qualification makes the FDX process technology platform especially well-matched for IoT/wireless, 5G (including mmWave), automotive radar, and satellite communications applications.

  • Integrate up to 5 chips into one die (RF FE, power management, audio, edge AI computing, sensor hub and WiFi/Bluetooth combo – for TWS applications (True Wireless Stereo)
  • Performance/Power ratio:
    • Up to 50% more performance
    • Up to 70% lower power
    • (NOTE: All data as compared to bulk 22nm CMOS process)
  • Body bias/back-gate leveraging ultra-low power SRAM (1pA/cell), <0.6V for operation and <0.5V for retention, to further reduce power consumption for power-sensitive edge applications
  • Access a broad set of high-quality GF partner solutions and services, such as design tools, design consultation, reference architectures, product packaging and test services, and EDA and IP solutions for additional differentiation