February 21, 2019 Xpeedic’s IRIS Qualified on GLOBALFOUNDRIES 12LP Process for High-Performance ApplicationsXpeedic Technology, Inc. today announced that its 3D full-wave electromagnetic (EM) simulation tool, IRIS, has been qualified on GLOBALFOUNDRIES’ 12nm […] Read Press Release
February 21, 2019 Xpeedic’s IRIS Qualified on GLOBALFOUNDRIES 12LP Process for High-Performance ApplicationsXpeedic Technology, Inc. today announced that its 3D full-wave electromagnetic (EM) simulation tool, IRIS, has been qualified on GLOBALFOUNDRIES’ 12nm […] Read Press Release
February 20, 2019 Rambus and GLOBALFOUNDRIES to Deliver High-Speed SerDes on 22FDX® for Communications and 5G ApplicationsRambus Inc., a leading provider of semiconductor and IP products, today announced the availability of 32G Multi-protocol SerDes PHY on GLOBALFOUNDRIES 22nm FD-SOI […] Read Press Release
February 20, 2019 Rambus and GLOBALFOUNDRIES to Deliver High-Speed SerDes on 22FDX® for Communications and 5G Applications Rambus Inc. (NASDAQ: RMBS), a leading provider of semiconductor and IP products, today announced the availability of 32G Multi-protocol SerDes PHY on GLOBALFOUNDRIES 22nm […] Read Press Release
December 17, 2018 eMemory’s Reprogrammable NeoMTP Qualified on GLOBALFOUNDRIES’ 130nm BCDLite® and BCD Technology Platforms for Automotive ApplicationseMemory today announced that its NeoMTP, Multiple-Times-Programmable embedded non-volatile memory (NVM) IP, has been qualified on GLOBALFOUNDRIES (GF) 130nm BCDLite® […] Read Press Release
December 17, 2018 eMemory’s Reprogrammable NeoMTP Qualified on GLOBALFOUNDRIES’ 130nm BCDLite® and BCD Technology Platforms for Automotive ApplicationseMemory today announced that its NeoMTP, Multiple-Times-Programmable embedded non-volatile memory (NVM) IP, has been qualified on GLOBALFOUNDRIES (GF) 130nm BCDLite® […] Read Press Release
November 19, 2018 Attopsemi’s I-fuse OTP worked at 0.4V and 1uW read on GLOBALFOUNDRIES 22nm FD-SOI for Fraunhofer Institute for Photonic Microsystems’ (IPMS) battery-less 61GHz RFID tagsAttopsemi’s I-fuse™ OTP provides ultra-low read voltage/current, ultra-low program voltage/current, small size and wide temperature to enable GLOBALFOUNDRIES 22nm FD-SOI […] Read Press Release
November 19, 2018 Attopsemi’s I-fuse OTP Passed 250 degrees Celsius for 1,000hrs Wafer-level Burn-in Studies on GLOBALFOUNDRIES 22FDX FD-SOI TechnologyAttopsemi’s I-fuse™ provides small size, high reliability, low program voltage/current, low power and wide temperature to enable GLOBALFOUNDRIES 22nm FDX® for automotive […] Read Press Release