GF’s proprietary FDX™ process technology platform, based on fully-depleted silicon-on-insulator (FD-SOI) technology, is incredibly well-suited for efficient single-chip integration of digital and analog signals, delivering cost-effective performance for connected and low-power embedded applications. In addition, a full range of features such as ultra-low-power (ULP), ultra-low leakage (ULL), RF and mmWave, embedded magnetoresistive random access memory (MRAM) and automotive qualification makes the FDX process technology platform especially well-matched for IoT/wireless, 5G (including mmWave), automotive radar, and satellite communications applications.

  • Integrate up to 5 chips into one die (RF FE, power management, audio, edge AI computing, sensor hub and WiFi/Bluetooth combo – for TWS applications (True Wireless Stereo)
  • Performance/Power ratio:
    • Up to 50% more performance
    • Up to 70% lower power
    • (NOTE: All data as compared to bulk 22nm CMOS process)
  • The industry’s most complete FD-SOI ecosystem (over 30 IP vendors, ~500 IP titles and ~10 design services partners)