Home IoT

Consumer demand for—and reliance on—smarter connected IoT devices continues to grow, with 5G and the broader coverage and transformational user experiences it promises poised to fuel still more demand. With that demand, however, comes the challenge of delivering increasingly complex IoT devices while reducing the cost and power consumption.

Audio & Display

More immersive AV/VR and mixed-reality experiences. Ultra-high resolution display and advanced imaging technology that make stunning visual detail and color possible, in our homes and on the go. Ever smarter audio, hearable devices and wearable devices that deliver advanced features with worry-free battery life. Consumer expectations for these products has never been higher, and GF® is ready with an application-optimized portfolio of solutions to help chip designers meet, and even beat, expectations.


Smart audio/hearable SoCs using 22FDX® RF with eMRAM

Best-in-class leakage and power benefits that can extend battery life up  twofold combined with a rich feature set make 22FDX® RF solutions from GF® a superior choice for true wireless stereo (TWS) SoC applications. Designers can take advantage of exceptional RF performance for seamless wireless connectivity, performance and area-optimized digital elements for enhanced AI capability and an optimized eMRAM that can replace embedded flash for area and power savings.

Optimized for on-the-go audio
22FDX® RF offers superior active power (0.4 V), ultra-low leakage (<1 pA/µm), and excellent area efficiency (> 5M gates/mm2), combined with industry-leading analog capabilities (noise, mismatch, short channel effect).

Elevating the audio experience
22FDX® is an outstanding choice for single-chip TWS solutions, enabling designers to take advantage of superior RF PA performance, an LDMOS (5 V-6.5 V) for integrating the battery charger and power management features and a qualified eMRAM solution to enhance the user experience.

Faster time to market
With 22FDX®, designers leverage the silicon-validated elements, including low leakage and low power design libraries, adaptive body bias for power-state throttling and a wide range of memory options (OTP/MTP/eMRAM)—along with connectivity and security IP—for differentiation and a time to market advantage.

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Integrated, single-chip solutions built on 22FDX® RF enable designers to reduce the BOM for smart audio/hearables by > 10 chips.

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Audio CODECs, pre-amps and microphone controllers using 22FDX® and 55 nm BCDLite®

GlobalFoundries22FDX® (22nm FD-SOI) solutions singularly deliver both high performance and low power, offering best-in-class leakage and dramatically extending battery life. 22FDX® features enhanced noise performance and modeling to minimize unwanted background noise. Low flicker noise device properties enable audio pre-amp integration, and 5V LDMOS allows for direct battery connect for battery life optimization. Chip designers can also take advantage of magneto resistive non-volatile memory (eMRAM) for simple, high-capacity onboard storage, with high performance and endurance, all in a single device. 

GF 55 nm BCDLite solutions are optimized for products requiring mixed signal (A/D) capabilities, in space-constrained designs. It supports audio/mic controller applications across a range of voltages, from 0.9 V to 30 V, to meet high dynamic-range requirements. The solution combines low-power logic, low drain-source on resistance, advanced power monitoring and embedded memory features.
With superior active power and ultra-low leakage (<1 pA/µm) capabilities, 22FDX® provides significant power advantages, including a 0.4 V Vdd operating voltage, while also delivering excellent area efficiency (> 5M gates/mm2).

Balance performance & cost
Low and ultra-low RDSon power FETs on 55 nm BCDLite provide a 30% to 47% reduction in on-resistance compared to previous GF BCDLite processes for die-cost and conversion efficiency advantages.

Differentiation & reliability
22FDX® enables designers to leverage silicon-validated elements, including adaptive body bias for power-state throttling and a wide range of memory options (OTP/MTP/eMRAM)—along with connectivity and security IP—for differentiation and a time-to-market advantage. GF 55 nm BCDLite solutions are in high-volume production and feature world-class D0 (< 0.04 def/in2) defect density.

Processing a music stream with active noise cancellation consumes less than 10 percent of GAP9 [GreenWaves’ hearables platform] resources, leaving plenty of headroom for dramatically improving the audio comfort or other new cutting-edge features, at the same time simplifying their development. GF’s 22FDX® platform, with its incredible performance, ultra-low power capability, low-leakage, and flexibility, was instrumental for enabling us to hit our performance targets.

– Loic Lietar, CEO, GreenWaves Technologies


Today’s IoT devices are enhanced by new levels intelligence. The sophistication of these devices continues to increase dramatically as the demand for smart features like face, speech and object recognition grows, and as processing and intelligent reaction move to the edge. All while protection of the user’s digital identity remains a critical concern.

GF® understands that the associated ultra-low power, high-performance and security requirements critical to enabling these value-optimized, smarter consumer IoT devices is top of mind for semiconductor chip designers, and is ready with a portfolio of processing-specific solutions to choose from.


“Our goal was to bring design innovation to some of the key challenges inherent in edge inference processors. That’s why we chose GF as our foundry of choice.”

— Steve Teig, Perceive CEO


GlobalFoundries offers a range of purpose-optimized consumer IoT MCU solutions, enabling designers to meet the area, performance and power and targets for their hardware.

Meet competing requirements
GF’s 40 nm, 110 nm and 150 nm solutions, built on a bulk CMOS platform, offer high value, feature-rich, power-optimized and low mask-count options for developing cost-sensitive consumer IoT MCUs. Designers can take advantage of supplier integrity for a time to market advantage.

Purpose built
22FDX® offers a combination of full SoC integration (eMRAM, analog power and RF elements on one chip), logic scaling (for AI and security features) for > 20% smaller footprint* and lower BOM costs. The unique 22FDX® SOI architecture gives designers additional power mode throttling capabilities with easy to use back-gate biasing solutions to reduce power > 50%* to extend battery life without compromising performance.

Differentiate with confidence
A rich portfolio of MCU-optimized IP and reference designs helps clients stand out from their competition, and get to market faster.

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More than 100 million 22FDX-based IoT MCUs have been shipped.

27 MCU new product introductions use 22FDX®, with 100% first time prototype success.

*Compared to 22 nm bulk CMOS.

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Edge AI accelerators using 12LP/12LP+ and 22FDX®

The 12LP/12LP+ FinFET and 22FDX® FD-SOI edge AI accelerator solutions from GlobalFoundries® (GF®) are optimized to reduce latency and actionable response times, which enable enhanced security and data privacy by managing data at the edge. The purpose-built solutions combine a spectrum of power, performance and area advantages that enable chip designers to choose the best fit for their standalone or embedded AI SoCs.

Accelerate AI at the edge
GF 12LP/12LP+ and 22FDX® solutions are optimized to deliver the performance horsepower you need to handle the demands of AI inferencing at the edge, instead of in the data center.

Solve the power challenge
Leverage the low dynamic power and best-in-class leakage power from 22FDX®, excellent thermal performance from 12LP/12LP+ and a low-voltage SRAM available with 12LP+ and 22FDX® to minimize power consumption in AC-wired or battery-powered devices.

Differentiate with confidence
Take advantage of a combination of AI-tuned features, including the AI reference package available with 12LP/12LP+ and the eMRAM AI storage core available in automotive grade 1-qualified 22FDX® to stand out from your competition.

22FDX® is up to 1000x more power-efficient than current industry edge AI accelerator offerings*

12LP/12LP+ offers AI-optimized performance with same global routing capability as 7 nm, so you can design smarter, not smaller.

*Assumes typical power consumption of edge device is ten to hundreds of watts. 22FDX® can achieve 20 milliwatts power consumption.

Wireless Connectivity

While wireless connectivity is becoming pervasive, the evolving standards in Bluetooth, GPS, Wi-Fi and Zigbee combined with the accelerating rollout of 5G hardware add complexity. Keeping pace with the challenges of handling multiple standards in shrinking form factors—with battery life measured in days, not hours—requires new avenues of innovation in wireless SoC architecture.


>40 billion

By 2025, there will more than 40 billion connected IoT devices.*

*IDC, June 2020

Wireless connectivity using 22FDX® RF

Consumer IoT hardware is performance, power andarea sensitive. All while being reliable enough to stand up to constant use.
22FDX® RF solutions from GF®, built on a 22 nm FD-SOI platform, enable designers to take advantage of superior power efficiency and performance while integrating multiple features into a single chip for significant area and BOM cost advantages. And because 22FDX® is automotive grade 1 qualified, the solutions offer the high reliability that consumer IoT applications rely on.

Space & power miser
22FDX® RF enables the industry’s only single-chip modem for > 20% area savings, while adaptive body bias gives designers the ability to cut dynamic power by 30% and leakage power by 60%.*

Optimize for consumer IoT
Take advantage of the IoT-specific capabilities and features available with 22FDX® RF, including best-in-class RF sensitivity, eMRAM and direct battery connect PMIC integration.

Inject innovation
Leverage the FDXcelerator™ ecosystem, a comprehensive, silicon-validated IP portfolio and reference designs to differentiate today, and tap into the strong FDX™ roadmap to 12 nm for planning next-gen, future-ready chips.

*Area reduction compared to 22 nm bulk CMOS. Dynamic and leakage power reduction compared to 12 nm FinFET.

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