Will 2018 Really Be “The Year of 5G”?

By: Dr. Bami Bastani

When I returned from the holidays, I thought I had entered a time warp. Did I sleep through January and wake up near the end of February? I expected to see the usual deluge of news about the gadgets and gear that will be featured at the upcoming Consumer Electronics Show (CES 2018). Instead, I’ve seen story after story about next-generation 5G mobile networks—typically the stuff of Mobile World Congress in Barcelona.

Time warp or not, one thing is clear: 2018 is shaping up to be a huge year for 5G. With an estimated 8.4 billion connected devices expected to be on the market by 2020, there is an accelerating need for an ultra-fast, high-bandwidth, low-latency network to connect them. 5G is coming, and it can’t get here soon enough.

Qualcomm’s keynote on January 10 is sure to be a high point for the 5G buzz at CES 2018. Cristiano Amon, president of Qualcomm, will be sharing Qualcomm’s vision for leadership in the 5G era. We were fortunate to hear a preview of Cristiano’s story when he delivered a keynote at our GLOBALFOUNDRIES Technical Conference (GTC 2017) back in September. One of his key points was that the demanding requirements of 5G networks are driving increased complexity at the chipset level. This means silicon innovation is essential to enabling the transition to 5G.

At GF, we offer a sweeping range of semiconductor technologies designed to help customers’ transition to next-generation 5G wireless networks. We have the industry’s broadest set of technology solutions for a range of 5G applications, including mmWave front end modules (FEMs), standalone or integrated mmWave transceivers and baseband chips, and high-performance application processors for mobile and networking.

Our roadmap includes offerings in RF-SOI, silicon germanium (SiGe), and CMOS, including a wide range of mature and advanced nodes with RF-optimized options combined with a broad range of ASIC design services and IP. These application-specific solutions address various customer approaches to 5G by supporting a vast range of capabilities, from ultra-low energy sensors, to ultra-fast devices with long-lasting battery life, to higher levels of integration that support on-chip memory.

  • 5G RF and mmWave Transceivers and Baseband Processing: Whether it’s for 5G <6GHz applications or the new 5G mmWave bands, GF’s broad range of CMOS technologies with FinFET, FD-SOI and more mature bulk CMOS technologies have optimized RF and mmWave offerings that allow our customers to make the best design trade-offs between cost, power consumption and performance. GF’s FD-SOI technologies (22FDX and 12FDX) are truly differentiated CMOS platforms that provide the lowest power consumption solution for any RF or mmWave transceiver. In addition, FDX is very well suited to address another part of the 5G standard, massive IoT networks. GF’s optimized solutions provide customers a flexible and cost-effective solution to integrate RF and mmWave transceivers with baseband modem or digital “calibration” processing in 5G handsets and base stations, NB-IoT solutions and other high-performance applications.
  • 5G mmWave Front End Modules: GF’s RF-SOI and SiGe solutions (130nm-45nm) deliver an optimal combination of performance, integration and power efficiency for FEMs with integrated switches, low noise amplifiers and power amplifier applications. For certain applications, such as 5G mmWave handsets and small base stations, GF’s 22FDX mmWave optimized offering makes it possible to integrate FEMs and transceivers onto a single chip, delivering significant advantages in terms of cost, power consumption and footprint. GF’s mmWave solutions are designed to serve applications ranging from sub-6 GHz to mmWave frequency bands.
  • Advanced Applications Processing: GF’s advanced CMOS FinFET-based process technologies deliver an optimal combination of performance, integration and power efficiency for next-generation smartphone processors, low latency networks and massive MIMO networks. Advanced CMOS solutions are available today from GF.
  • Custom Design for 5G Wireless Base Stations: The company’s application-specific integrated circuit (ASIC) design systems (FX-14 and FX-7) enable optimized 5G solutions (functional modules) by supporting wireless infrastructure protocols on high-speed SerDes, solutions to integrate advanced packaging, monolithic, ADC/DAC and programmable logic.

5G will undoubtedly play an integral role in helping next-generation networks provide “zero-distance connectivity” between users and their devices, allowing people to take full advantage of the processing power of the cloud as well as edge-to-edge connectivity. With the demand for 5G accelerating rapidly, GF will continue to work with its partners to provide solutions that will allow our customers to succeed in this competitive space. Stay tuned as we continue to roll out new details of our technology solutions for 5G throughout the coming year.

About Author

Dr. Bami Bastani

Dr. Bami Bastani

Dr. Bami Bastani is head of GLOBALFOUNDRIES’ radio frequency (RF) business unit, responsible for expanding the organization’s business leadership position in RF.

Bastani has more than 35 years of industry experience in the semiconductor industry, including component to system-level RF technologies. Prior to joining GLOBALFOUNDRIES, he was president, CEO and board member of Meru Networks, a global enterprise-grade Wi-Fi networks solution provider. During his time with the company, Bastani transformed Meru Networks from a hardware company to a solution provider, delivering a portfolio of software, software-defined networks (2015 SDN Excellence Award) and subscription cloud offerings (WaaS).

Dr. Bastani has also held positions of president, CEO and board member in the mobility, consumer and broadband markets, including president and CEO of Trident Microsystems, Inc. and ANADIGICS, Inc. In addition, he has served in executive positions at Fujitsu Microelectronics, National Semiconductor and Intel Corporation.

Dr. Bastani holds a Ph.D. & MSEE in Microelectronics from Ohio State University.

 

2018年真会成为“5G元年”吗?

作者: Dr. Bami Bastani

当我度假回来时,我以为发生了时间扭曲。我是否一觉睡过了一月份,接近二月底才醒来?我本来预计会像通常一样看到关于即将到来的国际消费电子展(CES 2018)上要展出的新奇产品的大量消息。不料,我看到的是一篇接一篇关于下一代5G移动网络的故事,而这一般是巴塞罗那移动世界大会才有的内容。

不管时间扭曲与否,有一点很明确:2018年将是对5G有重大意义的一年。预计到2020年市场上将有84亿台联网设备,为了连接如此多的设备,对超高速、高带宽、低延时网络的需求正在加速增长。5G即将到来,但不会说来就来。

高通公司1月10日的主题演讲无疑将使CES 2018的5G热推到高潮。高通公司总裁Cristiano Amon将同与会者分享高通公司如何在5G时代引领行业发展。我们有幸在去年9月份的格芯技术大会(GTC 2017)上听到了Cristiano关于此次发言的预告,他当时在给我们做主题演讲。他的一个重要观点是,5G网络的苛刻要求驱使芯片组的复杂性提高。这意味着硅片创新对于实现向5G过渡至关重要。

格芯提供全面的半导体技术来帮助客户向下一代5G无线网络过渡。我们拥有业界最广泛的技术解决方案,适合各种5G应用,包括毫米波前端模块(FEM)、独立或集成毫米波收发器与基带芯片,以及用于移动和联网的高性能应用处理器。

我们的路线图包括RF-SOI、硅锗(SiGe)和CMOS产品,其中有各种成熟先进的节点,RF优化选项与广泛的ASIC设计服务和IP结合在一起。这些专用解决方案满足了客户多种多样的5G需求,支持广泛的功能——从超低能量传感器,到具有持久电池寿命的超高速器件,再到支持片上存储器的更高集成度。

  • 5G RF和毫米波收发器及基带处理:无论是针对5G sub-6GHz应用还是针对新的5G毫米波频段,格芯类型多样的CMOS技术(FinFET、FD-SOI和更成熟的体硅CMOS技术)都优化了RF和毫米波产品,使我们的客户能够作出关于成本、功耗和性能的最佳设计权衡。格芯FD-SOI技术(22FDX和12FDX)是真正差异化的CMOS平台,可为任何RF或毫米波收发器提供最低功耗的解决方案。此外,FDX非常适合解决5G标准的另一部分需求——大规模IoT网络。格芯的优化解决方案为客户提供一种灵活且经济高效的方法,以将RF和毫米波收发器与基带调制解调器或数字“校准”处理集成起来,适合5G手机和基站、NB-IoT解决方案及其他高性能应用。
  • 5G毫米波前端模块:格芯RF-SOI和SiGe解决方案(130nm-45nm)为集成开关、低噪声放大器和功率放大器的FEM提供最佳的性能、集成度与功效组合。对于某些应用,例如5G毫米波手机和小型基站,格芯22FDX毫米波优化方案使得将FEM和收发器集成到单个芯片成为可能,这在成本、功耗和尺寸方面有着显著的优势。格芯毫米波解决方案旨在服务于从sub-6 GHz到毫米波频段的应用。
  • 先进应用处理:格芯基于先进CMOS FinFET的工艺技术为下一代智能手机处理器、低延时网络和大规模MIMO网络提供最佳的性能、集成度与功效组合。格芯现在提供先进的CMOS解决方案。
  • 5G无线基站的定制设计:格芯专用集成电路(ASIC)设计系统(FX-14和FX-7)通过支持高速SerDes上的无线基础架构协议来实现优化的5G解决方案(功能模块)——集成先进封装、单片ADC/DAC和可编程逻辑的解决方案。

在帮助下一代网络提供用户与设备之间的“零距离连接”方面,5G无疑将发挥无可替代的作用,让人们得以充分利用云端的处理能力和边缘到边缘连接。随着5G需求的加速增长,格芯将继续与合作伙伴合作,提供让我们的客户在激烈竞争中胜出的解决方案。请继续关注我们在未来一年持续发布的5G技术解决方案最新细节。

Reflections of 2017: GF Making a Difference

GF has a global footprint and with it a responsibility to our local communities. Through GF’s GlobalGives program, the company provides employees the opportunity to make a positive impact in their local communities in the areas of education, philanthropy and the environment.

In 2017, employees made a difference in many ways, giving their time, money and goods. Below is a sample of just a few of the wonderful programs and events employees helped support in 2017.

Aid to Victims of Disasters (GF WW)

GF launched a number of global campaigns this year to aid the victims of a series of natural disasters, which resulted in an extensive amount of damage and devastation around the world. These included Hurricanes Matthew, Irma, and Maria; flooding in South Asia; an earthquake in Mexico; wildfires in California; and an earthquake in Iran/Iraq.

The response from team GF was tremendous, raising valuable funds for all causes, in some cases including matching donations from the company. While immediate relief efforts were focused on providing victims with medical, food and water supplies, and other critical needs, those in the hardest hit areas will require even more support in the months ahead as they begin to rebuild their homes and communities.

Burlington Food Drive (Vermont)

Fab 9, in Burlington Vermont, held their annual food drive, collecting 4,817 pounds or nearly 2.5 tons of food that will make a large difference in nearby communities. In conjunction with the drive, the site held its annual food sculpture contest with teams of volunteers turning the donations into incredible, creative “food sculptures.”

A number of different service agencies in the region received boxes of food and other necessary commodities, thanks to the help of GF’s 971 dock, which supported the drive by storing, weighing, and transporting the food. Other community events in Burlington included a winter items drive, a bike build competition (which benefited a local charity), and Benevity training.

Toys for Tots Drive/Open House (New York)

Fab 8, in Malta New York, held its annual Toys for Tots Drive, providing employees and community members the opportunity to give back to the community over the holidays by helping out needy children in the Greater Capital Region. Local Veterans began collecting donations at the Fab 8 Open House.

As part of the event, GF also presented checks with money raised from our title sponsorship of the Malta 5K race to numerous community organizations. The event culminated with a check presentation to nearly a dozen FIRSTⒸ robotics teams and New York Tech Valley (NYTV) FIRSTⒸ affiliate partners, the recipients of NYTV FIRSTⒸ‘s 2018 grant awards. In 2017, the Malta site also donated about $3,000 worth of equipment to Ballston Spa High School for a new virtual reality lab.

Hair for Hope (Singapore)

The Singapore site held its annual Hair for Hope fundraising event, helping to raise funds for the Children’s Cancer Foundation and promote awareness of childhood cancer. A total of 68 GF employees had their heads shaved at the Singapore site, raising a total of $116,290.00 to date.

Employees at the Singapore site also supported the Boy’s Brigade Give-A-Gift Wishes program, providing 815 gifts to a number of different charitable organizations.

Christmas Volunteer Project (Germany)

Fab 1, in Dresden Germany, collected presents for 50 children and teenagers of the welfare organization Louisenstift gGmbH. The six groups of children from disadvantaged families range in age from 3 to 17 years. Many of them will not be able to celebrate Christmas with their families. Employees also made donations to two charitable organizations: Treberhilfe Dresden e.V., which supports teenagers and young adults without a home or any means of income, and INTERPLAST Germany e.V., a group of surgeons and nurses from Saxony, who operate for free on patients in Tanzania (Africa) during their vacation time.

ALS Walk/Treat the Troops Program (New York)

The Fab 10 team in East Fishkill, N.Y. participated in the annual Hudson Valley ALS Walk on the Walkway Over the Hudson. This is a walk in remembrance and in honor of relatives and friends who have been affected by ALS, and the funds raised support people living with ALS in the local community and helps to advance global ALS research and public policy initiatives aimed at finding treatments and a cure for the disease.

GF employees, along with IBM, also collected over 16,000 treats as part of the Treat the Troops program. GF employees brought the treats, which included cookies, candy, granola, crackers, chips, and popcorn, among others, as well as drink mix and cards, to a collection point at the IBM site in Poughkeepsie. In all, 211 packed boxes were shipped out to our deployed men and women!

Don Edwards San Francisco Bay Refuge (California)

Employees from the GF Santa Clara site sponsored a day of volunteering at the Don Edwards San Francisco Bay Refuge located in Alviso, just 10 minutes from campus.

Nineteen employees volunteered their time, spending approximately two hours weeding, planting, picking up litter and the like to help preserve the natural beauty of this local gem.  In total, GF volunteers picked up just over 27 pounds of trash. Other community activities at the Santa Clara site in 2017 included a food drive supporting the Redwood Empire Food Bank, a Back to School drive, and a Family Giving Tree Holiday Wish Drive.

Austin Food Drive (Texas)

Employees from GF’s Austin site participated in the Food and Fund Drive 2017, benefiting the Central Texas Food Bank. In all, 142 pounds of food (good for 113 healthy meals!) was donated by GF employees.

The Central Texas Food Bank works to fulfill the unmet needs of people in Central Texas in three ways – sharing free food and their knowledge on low-cost, healthy eating with families in need, assisting families who qualify for federal assistance programs, and making food affordable for charitable and government partners.

Sri Channabasaveshwara Gov’t School/Kidwai Memorial Institute of Oncology (India)

This year, GF’s Bangalore site donated a projector and computers to the Sri Channabasaveshwara Government School in Bellary, Karnataka, to help students attend “smart” classes. The school has approximately 200 students at the primary level and 200 students at the secondary level.  The school has qualified teachers who are very enthusiastic and, in addition to academics, they also focus on the overall development of children and extracurricular activities, such as in-house organic gardening, sports and cultural shows. GF also donated a projector to help support cancer awareness camps in rural areas in conjunction with the Kidwai Memorial Institute of Oncology, a well-known comprehensive regional center for cancer research and treatment, offering sophisticated diagnostic and treatment services in India.

As a company, GF remains committed to the communities in which we work. Through GlobalGives, employees have access to over two million non-profit organizations to enable a broader giving process and the opportunity to foster empathy through supporting our communities. GF employees, worldwide, are proud to be stewards for their communities and we all look forward to a great 2018.

nvNITRO Is Accelerating Business

By: Pat Patla

Information demands are increasing dramatically as digital transformation and other business trends are creating the need for more real-time decision making. Collecting, transmitting and storing the data that helps drive business insights is putting strains on businesses as they grapple with optimizing the increasing flow of data. Nowhere is this taking its toll on traditional systems more than in storage, where both the volume and critical nature of the information is driving rapid changes in how data is handled and tiered. Storage is both the bottleneck of most environments while simultaneously being the most critical component of any application.

Everspin created its nvNITRO™ technology to help address the growing needs for faster and more persistent storage. Built on magnetoresistive random access memory (MRAM) that is fabricated by GLOBALFOUNDRIES, nvNITRO brings both high performance and persistence to data storage, enabling a new generation of application performance.

We recently showed the power of nvNITRO at Supercomputing 17, the worldwide event for high performance computing.

In a demonstration with SMART Modular Technologies, SMART’s NVMe accelerator card was able to drive high performance with ultra-low latency. The demo showed an NVMe accelerator acting as a front-end buffer for an enterprise SSD. While SSDs are transforming businesses today and all flash arrays are gaining popularity because of their performance advantages over rotating media, NAND memory still can’t match the high speed and low latency of MRAM.

Transaction processing is just one of the areas where we see opportunity for MRAM. In these environments, to guarantee the integrity and compliance of transactions, many systems require logging or journaling of each transaction before beginning of the next new transaction. These applications – such as banking, payment processing, stock trading, e-commerce, supply chain, or ERP/CRM – can all benefit from nvNITRO technology. As message traffic increases, that additional logging can become a bottleneck if not handled quickly and efficiently.

With an MRAM storage accelerator as a front end to an SSD, transaction logging can be achieved in a fraction of the time required with just an SSD. The lower latency of MRAM means that these logs can be written faster, freeing the system up to begin the next transaction without delay. nvNITRO’s 9X reduction in latency, through the use of MRAM, means more transactions can be recorded per second, bringing the potential for greater overall application throughput.

Everspin Blog December

The other key benefit that MRAM delivers is its ability to maintain the state of the data without requiring batteries or supercapacitors. For these businesses, writing huge volumes of transactions also presents a second challenge beyond speed – maintaining the data regardless of the state of the underlying system. Typically, when a system loses power or has a power interruption, transactions that are “in flight”, either being written, or being journaled, can be lost because standard DRAM memory is not persistent and the NAND memory in SSDs just can’t write fast enough to capture all of the in-flight data before power is lost. With the persistence of MRAM, this data can be written out faster, reducing the data stored in the buffer. If the system does need to restart, that data would still be persistent in the MRAM upon initialization. In a world where regulatory entities scrutinize every transaction and may need a financial company to “replay” its transactions, ensuring everything was logged properly the first time is invaluable. This sort of protection goes beyond just protecting the data; at that point, it is actually protecting the company.

The traffic at Supercomputing was brisk and we were happy to see the level of excitement that our demo was producing. Technology like MRAM can become a great foundation for many future platforms. The ability to integrate nvNITRO technology into storage solutions through a variety of interfaces – directly as a PCIe or U.2 device, integrated into the chassis or integrated directly into the system boards – means there is a wide variety of implementations to match specific needs. Discussions about nvNITRO always start with the specific use case being shown, but eventually becomes “hey, could you…?” And that is where it gets interesting.

Along with the STT-MRAM that we were displaying in the nvNITRO demo, STT-MRAM is also available as embedded MRAM (eMRAM) through GF for those applications that demand the persistence, durability and write performance that embedded flash (eFlash) cannot deliver. As we see growth in areas like drones, IoT and autonomous vehicles, the value of embedding MRAM directly into designs will grow. Today’s nvNITRO solutions are built on Everspin 40nm STT-MRAM technology that is produced by our partner GF. Additionally, GF is now offering process design kits for 22FDX eMRAM. GF expects customers to start prototyping MRAM on multi-project wafers (MPWs) to start in Q1 2018.

We see the immediate opportunity today in accelerating the storage of massive data streams. These large amounts of telemetry need to be efficiently handled in a manner that ensures both fast capture and long-term retention. But as MRAM and eMRAM continue to gain market momentum (moving traditional memory and storage products aside) and the form factors shrink, we will see even greater opportunity present itself. Today we are accelerating the back-end storage and processing piece of the equation but it is not a stretch to see MRAM and eMRAM potentially integrating into the front-end and edge devices that are creating this data – and that is where things begin to get even more interesting.

If Supercomputing 17 was any indication, the future is bright for MRAM.

About Author

Pat Patla

Pat Patla

Pat Patla, is the Senior Vice President of Marketing, at Everspin. He is responsible for driving strategic direction for Everspin and leading the marketing effort to drive growth across our business, including product roadmaps and the development and execution of global marketing strategies that solidify the leadership position of the company.

Prior to Everspin, Pat was the Senior VP and General Manager for KNUPATH, a privately held semiconductor company, where he was responsible for establishing product roadmap strategies in the Machine Learning space. In addition, he has held several senior management positions including VP of Server Business Marketing at Samsung and VP and GM of the Server and Embedded Division of Advanced Micro Devices. Pat also led the launch of PowerEdge servers at Dell, Inc., achieving the number one market share in multi-socket servers.

Pat holds a Bachelors of Science degree in marketing management from DePaul University, Chicago, Illinois.

Now is the Time for eFPGA Technology

By: Timothy Saxe

Embedding FPGA technology into SoC designs isn’t really a new idea.  In fact, at QuickLogic we’ve been doing it for nearly two decades, starting with our FPGA/hard PCI controller SoC all the way back in 1999.  The value proposition was the same then as it is now.  Higher levels of integration delivering a higher level of functionality, performance, and design flexibility with lower cost, power consumption, and board space requirements.  So why hasn’t eFPGA technology taken off much sooner?

The answer lies fundamentally in the relationship between die costs and development costs.  Let’s start with die sizes and costs.  Our PCI device in 1999 employed a 0.35 micron process which used 24,650 square microns per logic cell.  By 2002, the 180nm process we used for our QuickMIPs device resulted in 9,306 square microns per logic cell – less than half the area for more FPGA capability.  Today our latest device, the EOS™ S3 Sensor Processing Platform, includes an even greater level of FPGA capability with a die area of just 961 square microns per logic cell through the use of a 40nm process technology.  That’s roughly a factor of 25 reduction in the die area of the eFPGA portion of these devices over the last 18 years.

Lower die area requirements for eFPGA technology mean that it can be integrated into an SoC with only a very minor increase in total device cost.  For example, we estimate that in a device built using 40nm process technology, adding 1,000 logic cells of eFPGA capability to a 3mm x 3mm die only increases the total die size by roughly 10%.  The corresponding cost increase will be slightly higher or lower percentage-wise depending on die yields and package costs, but the cost increase for such a device is marginal.  Given all of the benefits we described earlier, the value proposition from the device perspective now looks really compelling.

Let’s continue on to take a look at development costs.  More advanced process technologies are more expensive to develop and require more sophisticated design and verification tools which cost more money and require the SoC designer to invest more time in the design cycle.  Making a design error, or getting a feature wrong, or trying to deliver a product extension, or address a group of fragmented but related market opportunities, or keep up with rapidly evolving market requirements all create the need for additional mask spins and that costs significantly more money now than it did ten or twenty years ago.

In today’s world of highly complex SoCs the reality is that the silicon is cheap, but development is expensive.

So what’s a thrifty developer to do?  The answer is to embed a reasonable amount of FPGA technology.  There will be a relatively small incremental silicon cost, but they will gain the ability to leverage their high investment in development by adding a high degree of post-manufacturing design flexibility.  Instead of needing expensive design and verification mask spins to fix bugs, change features, or address new market opportunities or rapidly evolving standards, they will keep the “hard-wired” portion of their device intact and simply update the programmable FPGA portion.  In fact, we estimate that a company can very easily save 40 percent in development costs for two variants of the same design through the use of embedded FPGA technology.  And that doesn’t include the higher peak revenue levels, gross margin dollars, and longer time-in-market benefits associated with having the right product in the market at the right time.

eFPGA technology is a particularly great fit for SoC designers working with GLOBALFOUNDRIES.  The new 22FDX® process delivers strong economic benefits for new devices, with fewer masks required compared to previous generation nodes. Its dynamic back-bias feature reduces power by an estimated 78 percent (@0.6V) relative to 40nm processes.  That makes it well-suited to the low power and ultra-low power wearable, hearable and IoT applications which our eFPGA users are targeting.

So, if you are an SoC developer or manager, the bottom line is that lower development costs and higher profits are yours for the taking through a combination of QuickLogic’s eFPGA technology and GLOBALFOUNDRIES’ 22FDX process. The time is now.

About Author

Timothy Saxe

Timothy Saxe

Senior VP of Engineering and CTO

Timothy Saxe (Ph.D) has served as our Senior Vice President and Chief Technology Officer since November 2008. In August 2016, he expanded the role to include Senior Vice President of Engineering. Mr. Saxe has been with QuickLogic since May 2001 and during the last 15 years has held a variety of executive leadership positions including Vice President of Engineering and Vice President of Software Engineering. Dr. Saxe was Vice President of FLASH Engineering at Actel Corporation, a semiconductor manufacturing company. Dr. Saxe joined GateField Corporation, a design verification tools and services company formerly known as Zycad, in June 1983 and was a founder of their semiconductor manufacturing division in 1993. Dr. Saxe became GateField’s Chief Executive Officer in February 1999 and served in that capacity until GateField was acquired by Actel in November 2000. Mr. Saxe holds a B.S.E.E. degree from North Carolina State University, and an M.S.E.E. degree and a Ph.D. in electrical engineering from Stanford University.

 

AutoPro™: Helping to Make Connected, Autonomous Cars a Reality

By: Mark Granger

The automotive market for semiconductors is shifting into high gear. Right now the average car has about $350 worth of semiconductor content, but that is projected to grow another 50 percent by 2023 as the overall automotive market for semiconductors grows from $35 billion to $54 billion.

This strong growth is being driven by the need to develop what we are calling the ‘connected car.’ The term refers to the multiple electronic systems in a vehicle that collectively take data from wired and wireless sensors and combine it with high-performance processors and analog/power semiconductors, to provide the vehicle with semi-autonomous and ultimately fully autonomous capabilities.

These capabilities include Advanced Driver Assistance Systems (ADAS) such as collision and blind spot warnings, sophisticated infotainment and telecommunications options, and precise electrical control of major vehicle subsystems like the powertrain, among many others.

The move toward the connected car is driving fundamental change in the automotive supply chain, which is presenting GF with a unique opportunity. Traditionally, there have been separate and distinct tiers of automotive suppliers. At the top of the supply chain are the automobile manufacturers themselves, known as the original equipment manufacturers, or OEMs. Tier 1 suppliers such as BoschContinental, Delphi, etc. supply automotive-grade parts and systems directly to the OEMs.

Tier 2 is where we have always fit in. Tier 2 suppliers such as semiconductor companies have traditionally supplied the Tier Ones with parts for automotive systems, and have tended not to work directly with the OEMs. However, this is changing. As more electronics-based systems are used in automobiles and as they become more complex, there is a greater need to understand system architectures and networks, and to bring complex IP and quality standards to the design and manufacture of the SoCs and other chips that meet those needs.

That is exactly what we do here at GF. It’s why we recently announced a platform called AutoPro™ that provides OEMs and other automotive customers with a broad set of technology solutions, design and manufacturing services that help them implement connected intelligence while minimizing certification efforts and speeding time to market.

AutoPro is built on our 10 years of automotive-industry experience and leverages GF’s diverse technologies for automotive customers. It includes our silicon germanium (SiGe), FD-SOI (FDX™), RF and advanced CMOS FinFETs, packaging and intellectual property (IP) technologies.

Importantly, it also includes system-level architects who work directly with OEMs. In recent years GF has hired many people with extensive automotive SoC experience, such as myself, and the networking system designers in our industry-leading ASIC business from the IBM Microelectronics acquisition are unparalleled.

AutoPro solutions support the full range of AEC-Q100 quality grades from Grade 2 to Grade 0, and, in addition, we ensure technology readiness, operational excellence and a robust automotive-ready quality system through our AutoPro Service Package.

This gives customers access to the latest technologies designed to meet strict automotive quality requirements defined in the ISOInternational Automotive Task Force (IATF)Automotive Electronics Council (AEC), and VDA (German) standards.

Although AutoPro was only recently introduced, we are already at work with automotive OEMs.  One that we can mention is Audi, which has called our automotive offerings essential for delivering next-generation car electronics faster and with high reliability.

It’s early days, but the road is open before us.

About Author

Mark Granger

Mark Granger

GLOBALFOUNDRIES’ Vice President of Automotive, Mark Granger, has been in charge of high performance SoC product design and product management for about 20 years, most recently at NVIDIA where he led the company’s efforts to provide leading-edge application processors for autonomous vehicles.

 

Executive Perspective: A Strategy for Growth in China

By: Wallace Pai

Earlier this year GLOBALFOUNDRIES announced plans to build a 300mm fab in Chengdu, the capital of Sichuan province in southwestern China, in a joint venture with the Chengdu municipality.

We did so to take advantage of the fact that the Chinese semiconductor industry is undergoing radical change. The national imperative is to increase self-sufficiency in semiconductors dramatically in the next few years, because while China is the world’s fastest-growing semiconductor market, it currently must import about 80 percent of the chips used in equipment manufactured by Chinese OEMs.

Chengdu sees this move toward self-sufficiency as an opportunity to turn itself into the Silicon Valley of the budding Chinese semiconductor industry. While tourists may be familiar with the ancient city for its giant Pandas, spicy foods, cultural heritage and natural appeal, from a business perspective it is a thoroughly modern, cosmopolitan city with world-class infrastructure, a business-friendly attitude and a large, technology-savvy workforce.

Many foreign multinational companies are located there, such as IntelTexas Instruments and Siemens, along with large Asian enterprises such as Foxconn, which builds about two-thirds of the world’s iPads there.

Accordingly, Chengdu is providing attractive financial, educational and other incentives to prospective industrial partners, with the goal of developing an entire chip design and manufacturing ecosystem to serve the Chinese market.

That presented GF with an incredible ground-floor opportunity, not only to manufacture the chips required by the country’s electronics manufacturers, but also to play a key role in supporting the developing Chinese semiconductor industry as a trusted partner with uniquely advantageous, world-class technical resources.

Thus, we chose to build our fab in Chengdu despite strong interest from other cities. Fab 11 will be the largest and one of the most advanced 300mm fabs in China upon completion next year, and will be the center of our 22FDX® production for that market.

Initially we will produce 130nm-180nm mainstream technologies there, with a capacity of 20,000 wafer starts per month (wspm). Then, in the latter part of 2019, we will begin volume production of our highly differentiated 22FDX (FD-SOI) technology, with an anticipated capacity of 65,000 wspm. Ultimately some 3,500 employees will be involved in Fab 11 operations.

Fab 11 adds to the resources we already have in China. We started with a sales office in Shanghai several years ago, where there are now 50 people in various roles including field application engineers, sales, marketing and other technical support functions.

But as a result of the IBM Microelectronics acquisition, we now also can offer a highly differentiated portfolio of RF technologies and a very large ASIC design/development team, with about 150 people in Shanghai and another 40-50 in Beijing. As our ASIC business continues to grow, so too will these numbers. This ASIC offering is a very powerful one, with one of the industry’s broadest ranges of ASIC design services, differentiated intellectual property (IP), custom silicon and advanced packaging for true end-to-end solutions.

Building a 22FDX Ecosystem, Leveraging ASIC Capabilities

The Chengdu government rightly sees our 22FDX technology as a key advantage in its efforts to become a center of gravity for the growing Chinese chip industry, and our presence as a magnet that will attract even more technology companies and make the city an international center of excellence for semiconductors.

That’s because 22FDX, with its unique combination of performance, RF capabilities, power, size and cost, is a perfect match for the end-markets on which China is focusing – battery-powered, wireless computing devices for mobile, Internet of Things (IoT), driver assistance/autonomous driving and 5G applications.

Beyond the fab, and along with our joint venture partner, we are helping to develop an entire 22FDX-based ecosystem comprising IP, EDA and design services companies, who will be our customers and partners going forward. This ecosystem will play a critical role in the eventual launch of 22FDX technology in China because these companies will already know how to work with it and will be familiar with its benefits as they design innovative electronic products.

For example, there are more than 700 fabless semiconductor companies in China, and that number is growing fast. While some are more technically advanced than others, on an overall basis there is a strong need for expert help and technical assistance. Our in-country ASIC engineers are already working on-site with some of these companies on 22FDX projects which means, in effect, that we’re already open for business in that technology even though Fab 11 itself is still under construction.

Throughout greater China, our existing customers range from Tier One companies to many of these smaller companies, but as we bring on more capabilities and technologies such as 22FDX, opportunities are opening up with customers we weren’t able to serve previously.

It’s Just the Beginning

The Chinese semiconductor industry is really only in its infancy. More than 10 fabs are now under construction throughout the country, including ours, and an entire industrial infrastructure is being established.

Seen in that light, our new fab is not simply a manufacturing facility, but rather is a tangible symbol of a bright future for us in China.

About Author

Wallace Pai

Wallace Pai was named GF’s Vice President and General Manager of China in July, 2016. He is based in Shanghai and responsible for driving the company’s strategic direction and growth in the greater China region as GF expands its presence and customer base in the region.

His decades of experience in China and extensive networks of business associates and contacts there give him a keen understanding of how China’s businesses work, as well as highly relevant experience in the mobile market space, which is a key target for GF.

Throughout his career as a senior executive at Motorola, Qualcomm, Samsung and Synaptics, Pai has shaped strategy and led numerous strategic initiatives and investments in China. He is fluent in Mandarin and Cantonese, and has extensive access to business networks throughout the Greater China region.

Pai holds an MBA from Harvard Business School and an MSEE from the University of Michigan, Ann Arbor. Early in his career, Wallace was a consultant for McKinsey & Company and a microprocessor design engineer at Intel.

 

高层视角:格芯FDX™技术良性循环的开端

在我们竞争激烈的行业内, 公司持续挑战自我并不断前进是十分重要的,否则公司将面临逐渐落后的困境。在格芯, 不断前进意味着我们敢于想象并在过往不曾开拓的道路上勇敢尝试,为客户提供独特价值。

在格芯,被我们称为 FDX™的全耗尽式SOI技术就是勇于尝试的例子之一。您已在最近频繁得到我们关于FDX技术的消息。我们的22纳米和12纳米 FDX制程是低功耗、移动类及高度集成SoC应用的理想选择,是我们许多用户在市场中的甜区。

我们为物联网系统独立开发了22FDX®技术,(根据McKinsey & Company基于Gartner, iSuppli, Strategy Analytics的量化预测分析)我们预测物联网市场将在2020年前为半导体提供500亿美金的市场机会。利用软件控制的背栅偏置功能,22FDX®技术提供14/16纳米FinFET技术的性能,同时,它还支持利用电池功能的物联网应用所需的超低功耗系统及超低漏电设计库。此技术是为提供高性能数字库与高性能模拟及射频电路的集成而设计。

第一例IP和硅技术的实现证明,22FDX平台在满足物联网需求之余,同时也是低端到中端智能手机单芯片集成的理想选择。此外,拥有22FDX平台的我们打破了半导体技术开发的固有模式。在固有模式中,最先进的节点总是为高性能的数字逻辑应用而开发,自此两年后,模拟及射频将作为辅助技术被加入到制程工具包,此时,追求先进性能的用户已移至下一数字化节点。最终,再一个两年过后,你将有可能拥有非易失性内存(NVM)的集成能力。这意味着,所有得益于NVM的系统都必须使用已存在4年之久的技术来集成逻辑IP。

22FDX平台使我们的客户得以打破这一局面,帮助客户设计智能的、全集成(例如最低的功耗及系统成本)并连接的(例如芯片上射频系统)系统。我们观察到,不只是正在使用28纳米技术的客户,还有使用55纳米及40纳米(射频或NVM)的客户都已在考虑直接转移至22FDX,以利用这一充满竞争力的技术优势。

我们现已与大量客户展开了FDX技术上的合作,而其中一大部分客户已进入产品原型制造阶段。FDX技术是我们产品的基石,我们也在挑战自我,为客户在尽可能短的时间内带来属于用户的基于FDX的产品。细致来说,我们努力提供可用的设计工具及IP,让客户得以使用FDX技术的软件控制背栅偏置能力。

FDXcelerator合作项目就是为此目的被发展出来的。此项目为合作开发模式,为客户提供尽快将基于FDX的SoC推入市场所需的全面支持与资源。请将此项目看作一个完整的生态系统,此生态系统包含了通过资格验证的专家级合作伙伴,以及包括了格芯在内的供应商,我们已做好准备,随时为客户提供任何的帮助,将创新的SoC方案快速而低成本低带入市场。

不管是对于大或小的业务,强大而具有战略性的合作关系都是至关重要的。请让我以我的个人经历作为例子。在15年前,我在德州仪器内部开启了新的业务,致力于为移动电话开发微控制器设计方案。我在早期预测到手提电话将智能化、拥有高级的操作系统、下载应用的能力、分享媒体的能力以及更大的手机屏幕。我们称这款微处理器为OMAP处理器。(这个世界在过去的15年里发生了多大的变化啊!!!)

为了OMAP,我们成立了类似于FDXcelerator的生态网络,并称之为OMAP技术中心项目,以打破设计的局限,为客户带来最为优秀的技术合作伙伴以及优化的软件方案和OMAP技术所需的设计工具。

很快,我们的合作伙伴适应了新的资源、技巧、工具和多媒体软件或基础软件方案,为OMAP平台提供了支持并在新兴的智能手机市场占领先机,成为了市场内的领导者。OMAP的客户在各自的市场内都获得了成功,这都得益于他们以加快的步调进行了开发。OMAP技术中心—我们的合作伙伴—一同快速发展并分享了胜利的果实。

再回到原来的话题:我们预测22FDX SoC的设计复杂程度与所需的投入强度远低于FinFET技术,而充分利用软件控制的背栅偏置是SoC设计的新方式。这种不同并不会更加复杂。(根据Gartner的研究显示,FinFET的设计复杂程度是28纳米技术的两倍。)

若是没有专家的帮助,我们断无可能如此快速出色地完成目标。而提供专家的帮助,正是FDXcelerator项目的宗旨。

目前,我们已官方宣布了与7家世界级伙伴的合作关系,仍有许多其他的企业正在寻求加入的机会。每一位被我们评估并选中的合作伙伴,都承诺向客户提供专注的服务、具体的资源,此项目现已包括:

  • 设计工具(EDA) – 已植入业内领先设计流程的模块,利用独特的FD-SOI 体偏置功能
  • 设计单元(IP) – 完整单元库,包括基础IP,接口及复杂IP,使晶圆厂用户使用经验证的IP单元,更快开始设计
  • 平台 (ASIC)
  • 参考方案– 新兴应用领域的系统级专精,加速投入市场
  • 封装与测试方案(OSAT)– 开启最先进的SoC送达服务
  • 其他资源– 专注于FDX的设计咨询及其他服务

以上所有服务提供了来自格芯FDX技术的独特的收益与额外价值。

我认为FDXcelerator合作项目是客户加快投入市场速度的关键因素。它是FDX技术良性循环的催化剂,我们鼓励更多的客户将技术重心转移至FDX技术,而客户的设计理念与参与将进一步刺激生态系统的增长,而这将吸引更多的客户并就此不断循环。

我们正在为合作伙伴们创造业务成功的机会,同时,通过提供现有的方案与资源以增加设计创造力,我们也为客户提供加速进入市场的优势。

能在这个转变的开始参与到其中来令人兴奋。我很自豪成为我们客户的合作伙伴,并已迫不及待见证他们使用我们的技术获得成功!

不包括“传统互联网设备”如笔记本电脑及智能手机。不包括汽车类应用。粗略先期预估基于设备种类划分。在通讯类、数字化嵌入式内存类里,假定SoC具备简单设备的通讯功能与内存集成。

高层视角:中国市场成长策略

今年初,格芯宣布了与成都市政府以合资的方式,在这位于中国西南的四川省会建立300毫米晶圆厂的计划。

中国半导体行业正在经历巨大的改变,我们的决策亦是籍此获取先机。对中国而言,在今后几年内获得巨大发展以增加半导体的自我供应是势在必行的,因为作为世界发展最快的半导体市场,目前中国OEM制造的设备所用的芯片有将近80%来自海外进口。

成都方将这种追求半导体自我供应的目标视为机会,并欲籍此将成都打造为国内的半导体业硅谷。当游客流连于成都古城,赞叹这里的大熊猫、享受辣味美食与独特文化及自然风光时,从商业角度上,成都也是一个现代化的大都市,拥有世界级的基建、友好的商业态度和广大的技术人力资源。

许多国际化企业也坐落与此,如英特尔德州仪器 和 西门子, 此外还有组装了全球三分之二苹果iPad的大型亚洲企业 富士康 。

相应的,成都正在为未来的业内合作伙伴提供充满吸引力的财政、教育及其他激励措施,致力于打造服务于中国市场的完整芯片设计和制造生态圈。

这向格芯展示了一个难以置信的巨大机遇,格芯不单为全国的电子制造商生产所需芯片,更可以在中国半导体业的发展中扮演重要角色,成为拥有独特优势和世界级技术资源的中国市场可信赖合作伙伴。

因此,尽管其他城市也对我们很有兴趣,我们仍然选择在成都建立晶圆厂。Fab 11(11厂) 在明年完工时将成为中国最大的晶圆厂,并成为中国最先进300毫米晶元厂之一。同时,Fab 11也将成为我们22FDX® 的生产中心。

先期,我们会生产130纳米到180纳米的主流技术产品,每月晶元数量为20,000片。之后,在2019年下半年,我们将进行高度差异化的22FDX(FD-SOI)的量产,预计产量为每月65,000片。最终,将有约3,500名员工参与Fab 11的运营。

Fab 11成为我们中国格芯的新资源。几年前我们在上海成立销售办事处,现已有50人的规模,担任不同工作,包括FAE,销售,市场营销及其他技术支持工作。

而在完成 对IBM微电子部的收购后, 我们现已可提供高度差异化的射频技术并拥有大型ASIC设计/开发团队,其中约150位员工位于上海,另外40至50位员工位于北京。我们的ASIC业务持续增长,员工的人数也不断增加。我们的ASIC业务非常强大,拥有业内应用最广的ASIC设计服务、差异化的IP、定制芯片和先进的封装技术,提供真正的端到端设计方案。

打造22FDX生态系统,利用ASIC的能力

成都政府努力建设成为发展中的中国芯片行业中心,并视我们的22FDX技术为其关键优势。我们的出现将如同磁铁一般吸引更多的技术公司加入成都,并将成都打造成为卓越的半导体国际中心。

正是因为22FDX所具备的独特吸引力,来自于其独特的性能、射频功能、功耗、尺寸和成本组合,使其完美地匹配中国终端市场的需求 – 包括电池供电类、移动业务无线计算设备、物联网、无人驾驶/辅助驾驶及5G类应用。

在晶元厂项目以外,在我们合资伙伴的合力下,我们帮助发展基于22FDX的完整生态圈,包含了IP,EDA和设计服务公司,这些公司未来都会成为我们的客户及合作伙伴。这一生态圈将扮演重要角色,在中国推广22FDX技术,因为他们已经通过设计基于22FDX的创新的电子产品了解这一技术的优势并熟悉如何运作。

举个例子,中国现有超过700家无晶圆厂的半导体公司,而此数目仍在快速增加。即使其中一部分公司技术非常先进,可是总体而言对于专家的帮助和技术支持的需求十分强烈。我们位于中国的ASIC工程师现已在现场为这些公司提供22FDX项目的支持,这意味着,我们在Fab 11还在建时就开始了22FDX业务。

放眼大中华,我们现有的客户涵盖顶尖企业到许多小公司,但是当我们提供更多的能力及类似22FDX的技术,更多的机遇将涌现,让我们有机会服务此前无法服务的客户。

这只是开始

现今中国的半导体行业正处于萌芽期。包括我们的Fab 11在内,全国有超过10家晶圆厂正在建设,完整的产业基建正在建设中。

从这个角度看,我们的晶圆厂不只是一个简单的生产设施,更是一个中国美好未来的有形象征。

关于作者

Wallace Pai
白农先生具有20余年的半导体行业从业经验,在战略规划、企业发展、市场营销和建立企业生态系统方面具有丰富的专业经验。其先后在摩托罗拉、高通、三星和新思国际担任高级主管,负责制定战略,在中国领导实施了多项战略计划和投资项目。他精通普通话与粤语,在大中华区拥有广泛的业务网络。白先生入职后将常驻上海,并向全球销售与业务拓展高级副总裁 Mike Cadigan汇报工作。

在加盟格芯前, 白农先生在新思国际担任副总裁兼总经理,负责大中华区、韩国和日本地区的触控与显示业务。在此之前,他曾任三星集团的公司业务拓展副总裁,负责领导移动和半导体业务战略计划和投资项目的实施。在进入三星之前,他就职于摩托罗拉移动事业部,担任公司副总裁,负责公司业务拓展和公司风险基金管理,推动实施了多个对公司基础和发展意义深远的战略收购和资产剥离项目。在进入摩托罗拉之前,白先生就职于高通,先后在全球业务拓展、产品管理和战略规划部门担任领导职务。

白农先生拥有哈佛商学院工商管理硕士学位和安娜堡市密歇根大学电机工程学硕士学位。在其早年职业生涯,他曾供职于麦肯锡咨询公司担任顾问,并在英特尔公司担任过微处理器设计工程师。

 

eMRAM: Ready to Roll!

By: Dave Eggleston

There’s been a lot of news recently about embedded MRAM (eMRAM), and for good reasons.  The technology is rapidly accelerating from research and development to commercialization at multiple foundries, and is now being adopted by chip designers. Most notably, GLOBALFOUNDRIES just announced the availability of its 22FDX® 22nm FD-SOI eMRAM for system-on-chip (SoC) designers, with released PDKs, off-the-shelf macros, and MPWs for customer prototyping. With risk production expected from GF and other foundries by the end of 2018, MRAM is shaping up to be a big technology and market disruptor right now, promising to replace embedded Flash, and augment SRAM in MCUs and SoCs for automotive, IoT, consumer and industrial systems. Over the horizon, FinFET processes with eMRAM will also appear, bringing new capabilities to future storage, networking and data center systems.

Supercharged Performance

MRAM technology has been under development for decades – in parallel with several other non-volatile memories including RRAM, Phase Change, Carbon Nanotubes, Ferroelectric – and recently, eMRAM has clearly taken the lead position among all emerging embedded memory technologies. Why? eMRAM offers SoC designers very significant performance advantages:

  • Very fast write speeds (<200ns)
  • Extremely high endurance (~10E8 cycles)
  • Operation from logic Vcc (no high voltage pumps needed)
  • Low energy writes (10x lower than eFlash)
  • Zero bitcell static leakage (0 pA vs. >50pA for a SRAM bitcell)

Coupled with the performance advantages, eMRAM enjoys a significantly higher level of technology maturity versus other emerging NVM options, featuring:

  • Well understood magnetism physics
  • Simple, controllable switching mechanism (no forming, or stepped writes needed)
  • Low incidence of single bit failures
  • Demonstration of multi-Mb arrays at sub-28nm
  • Achieving high yield, with excellent reliability
  • Full integration into advanced foundry production processes

eMRAM simultaneously delivers bit density, speed, endurance, coupled with low power consumption and non-volatility. The combined advantages of superior performance and technology maturity for eMRAM are key factors for foundry customers deciding to use eMRAM for their sub 28nm products.

Hit the Road Running

eMRAM simultaneously delivers bit density, speed, endurance, coupled with low power consumption and non-volatility. The combined advantages of superior performance and technology maturity for eMRAM are key factors for foundry customers deciding to use eMRAM for their sub 28nm products.

Historically, eMRAM has not been perceived as ready for commercialization because of several manufacturing and reliability barriers: material complexity, poor data retention at hot temperatures, susceptibility to external magnetic fields, and finally, difficult and expensive manufacturing.

Tough challenges to overcome, but to move the needle from an unreliable to reliable technology the industry has directly tackled the issues of materials and manufacturing complexity. As a part of this effort, major fab equipment makers, along with foundries, pioneered eMRAM specific PVD and Etch equipment that achieves 20 wafers per hour (wph) throughput, which enables a competitive manufacturing cost.

Moreover, GF has specifically improved eMRAM reliability, by modifying the magnetic materials to deliver outstanding data retention and magnetic immunity, including:

  • Less than 10ppm bit error rate through 260°C solder reflow
  • 15 year data retention at 125°C
  • More than 1000 Oe magnetic immunity

In other words, many of the past barriers for eMRAM commercialization have now been overcome – solved by the collective efforts of the foundries and major fab equipment makers in making eMRAM reliable and manufacturable.

Crank up the “Killer Combo”

In light of these new advancements in reliability and manufacturability, high-volume market opportunities have now opened up for eMRAM. The market opportunity further expands with the widespread commercialization of fully-depleted silicon-on-insulator (FD-SOI) as a substrate.

eMRAM on FD-SOI brings together best-in-class capabilities, creating an irresistible “Killer Combo” vs. other bulk silicon offerings. Unlike eFlash, which is built down into the silicon, eMRAM’s magnetic element is built up in the metal layers, so it is more easily implemented into a logic process such as FD-SOI with no impact on FEOL transistors. Additionally, eMRAM’s higher endurance, faster write speed increases SoC performance, and the low write energy reduces power consumption by more than 80 percent (vs. 28nm bulk silicon with eFlash).

In particular, GF’s industry leading 22FDX eMRAM platform provides excellent scaling, outstanding RF IP, ultra-low leakage, power island control – and (finally!), eMRAM macros with either eFlash or SRAM interfaces. For the first time, the versatility of GF’s 22FDX eMRAM enables ultra-efficient memory subsystems that power cycle with no time or energy penalty, making it suitable for a broad spectrum of applications.

eMRAM is finally here; ready for SoC designers to take advantage of the superior performance and technology maturity, with GF’s 22FDX eMRAM delivering excellent reliability and manufacturability.

Design your Killer Product today, using GF’s 22FDX “Killer Combo”!

To test drive GF’s 22FDX and embedded memory offerings:

About Author

Dave Eggleston

Dave Eggleston

Dave Eggleston is the Vice President of Embedded Memory at GlobalFoundries, which he joined in 2015. Dave has responsibility for the embedded volatile and non-volatile memory businesses at GlobalFoundries, as well as the related strategic direction and initiatives. Dave is the former CEO and President of Unity Semiconductor, a RRAM industry pioneer acquired by Rambus. He has held technical executive management roles at Rambus, Micron (where he built and spearheaded the NAND systems engineering organization), SanDisk, and AMD. He holds 28 patents in NAND flash and next-generation ReRAM memory, storage system usage, and high volume manufacturing. He currently serves on the Board of Directors of two NVM start-up companies. He received his MSEE from Santa Clara University and his BSEE from Duke University.