GlobalFoundries Joins World Economic Forum’s Global Lighthouse Network for Manufacturing Excellence September 16, 2025 GlobalFoundries’ Singapore Fab recognized by the World Economic Forum for advancing and scaling Industry 4.0 technologies, harnessing AI and Machine Learning to drive digital transformation across its global operations SINGAPORE, September 16, 2025 — GlobalFoundries (Nasdaq: GFS) (GF) today announced that the World Economic Forum (WEF) has designated its 300mm fab in Singapore as part of the Global Lighthouse Network (GLN) of advanced manufacturers. This prestigious title recognizes GF’s leadership in deploying and scaling Fourth Industrial Revolution (4IR) technologies to drive enterprise-wide operational transformation. GF continuously strives to leverage digital capabilities to improve safety, cost, quality, and productivity. By harnessing AI and machine learning, GF is transforming its manufacturing operations and driving smarter, more sustainable production across fabs in the U.S., Europe, and Asia. By deploying over 60 smart manufacturing solutions since 2020 leveraging AI, machine learning, IoT, and advanced analytics, GF has demonstrated significant breakthroughs in cost, quality, and productivity in manufacturing. In parallel, GF is strengthening the broader ecosystem through strategic partnerships with academia, solution providers, and government agencies. These collaborations are building a robust pipeline of digital talent and enabling the co-development of innovative, future-ready solutions. Meanwhile, GF engineers are upskilling in automated, data-driven environments and transitioning into roles to lead smart manufacturing initiatives and drive innovation. As part of the GLN, GF will continue to cross-learn and progress our innovation across the ecosystem with other global Lighthouse sites. “Our digital transformation is instrumental in accelerating GF’s ability to deliver differentiated, essential chips that power AI growth and adoption, while meeting the demands of fast-evolving markets such as mobile, automotive and IoT,” said Niels Anderskouv, president and chief operating officer at GF. “By re-engineering operations through digital innovation, we lead with agility, delivering trusted, high-quality semiconductors with speed and reliability. This strategic evolution unlocks scalable growth and long-term value for our stakeholders.” “The organizations that will shape the future are those driving holistic transformation today, embedding digital innovation, resilience, sustainability, talent development, and customer centricity into everything they do,” said Kiva Allgood, Managing Director and Head of the Centre for Advanced Manufacturing and Supply Chains, World Economic Forum. “Congratulations to the new Lighthouse cohort that demonstrates how forward-thinking companies across industries and segments are putting this vision into action, setting a new global standard for operational excellence and impact.” “This milestone signifies GF Singapore’s critical role in GF’s global manufacturing footprint, alongside our world-class facilities in the U.S. and Dresden,” said Yew Kong Tan, senior vice president and general manager, APAC Manufacturing and Singapore Site at GF. “At GF’s AI Centre of Excellence in Singapore, we are advancing the adoption of Industry 5.0 from 4.0, reshaping our workforce with the latest digital solutions for the current and next-generation talent, and building a robust digital ecosystem to fuel innovation through strategic partnerships. Through continued investment in cutting-edge technologies and people, GF champions Singapore’s leadership in advanced manufacturing, reinforcing its position as a key global semiconductor manufacturing site.” About GlobalFoundries GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented and diverse team delivers results with an unyielding focus on security, longevity, and sustainability. For more information, visit www.gf.com. ©GlobalFoundries Inc., GF, GlobalFoundries, the GF logos and other GF marks are trademarks of GlobalFoundries Inc. or its subsidiaries. All other trademarks are the property of their respective owners. Forward-looking information This news release may contain forward-looking statements, which involve risks and uncertainties. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. GF undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law. Media Contact:Luana Low [email protected] +65-9106-3469
Synopsys and GlobalFoundries Establish Pilot Program to Bring Chip Design and Manufacturing to University Classrooms September 4, 2025 Strategic Collaboration to Deliver Practical Chip Design Experience to Prepare the Next Generation of Engineering Talent Key Highlights · Launching a pilot ‘chip design to tapeout’ flow curriculum, enabling academic institutions with industry-aligned coursework. · Pilot testing underway at over 40 select worldwide universities with intent to scale. · Combination of access to Synopsys’ EDA solutions and GlobalFoundries’ technology solutions to provide students valuable, real-world experience. Sunnyvale, Calif. and Malta, N.Y., September 4, 2025 – Synopsys, Inc. (NASDAQ: SNPS) and GlobalFoundries (NASDAQ: GFS) (GF) announced today a new collaboration to launch an educational ‘chip design to tapeout’ program for universities worldwide. Aligned with both GFLabs’ and Synopsys Academic & Research Alliances’ (SARA) missions to advance semiconductor innovation through R&D and academic collaboration, this pilot initiative gives researchers, professors and students hands-on access to real-world chip design and manufacturing. By dramatically lowering the cost barrier to custom silicon, the program enables academic institutions to turn their design concepts into working silicon, expanding opportunities for education, research and workforce development. Forty universities worldwide are participating in the sponsored open-source 180MCU pilot launching this fall. Synopsys will provide comprehensive support including professional-grade electronic design automation (EDA) tools, training and design collateral leveraging the Synopsys Cloud design platform. Once designs are finalized, GF will manufacture the chips through its GlobalShuttle Multi-Project Wafer Program, which aggregates designs from multiple institutions onto a single wafer for fabrication. “Partnering with GlobalFoundries to bring a full ‘chip design to tapeout’ course to universities is a game changer,” said Dr. Patrick Haspel, executive director of SARA at Synopsys. “This collaboration will empower students with practical, hands-on experience using advanced tools and technologies – skills that are critical to drive innovation in the semiconductor industry. Together, we’re not just teaching design – we’re building the next generation of engineers who will shape the future of silicon.” As Synopsys and GF seek to evolve this workforce development initiative further, the next phase of the tapeout is focused on bringing these technologies directly into classrooms and embedding hands-on design and testing into academic course curriculum. With the goal of having students collaborate in a design class, Synopsys will provide training to professors on how to lead this course. Following a shuttle run, the second course will dive into classroom testing with chips returned for the next semester. “This program reflects our deep commitment to advancing semiconductor innovation and cultivating the next generation of talent,” said Bika Carter, director of external R&D at GF. “By giving students and researchers the opportunity to bring their designs from concept to silicon, we’re enriching chip design education and helping shape the future of our industry. We’re proud to partner with Synopsys to empower the talented minds driving tomorrow’s breakthroughs.” This design enablement collaboration is supported by Synopsys’ SARA program, which provides software, cloud environments, training and curriculum to equip students with latest technology and learning materials. The new Synopsys-GF collaboration exemplifies the SARA program’s commitment to partner on semiconductor workforce development initiatives and nurture talent pipelines worldwide. Along with providing participating universities with essential tools and cloud environment access, the SARA program will also offer comprehensive course content and training. The tapeout education pilot is just one aspect of GF’s University Partnership Program, which serves to close the prototyping gap in academia and expand access to new technologies to support technological innovation in the semiconductor industry. In its work with more than 80 universities, 110 professors and 600 students, the program selects projects aligned with GF’s R&D roadmap priorities to support research breakthroughs in areas including radio frequency, radar, quantum computing, silicon photonics, sensors and more. The combination of Synopsys and GlobalFoundries brings together industry-leading EDA design tools and advanced manufacturing, empowering academic institutions to offer students an integrated, real-world journey through the semiconductor process. Resources Learn more about the Synopsys Academic & Research Alliances (SARA) program. Learn more about GF’s University Network. About Synopsys Synopsys, Inc. (Nasdaq: SNPS) is the leader in engineering solutions from silicon to systems, enabling customers to rapidly innovate AI-powered products. We deliver industry-leading silicon design, IP, simulation and analysis solutions, and design services. We partner closely with our customers across a wide range of industries to maximize their R&D capability and productivity, powering innovation today that ignites the ingenuity of tomorrow. Learn more at www.synopsys.com. © 2025 Synopsys, Inc. All rights reserved. Synopsys, Ansys, the Synopsys and Ansys logos, and other Synopsys trademarks are available at https://www.synopsys.com/company/legal/trademarks-brands.html. Other company or product names may be trademarks of their respective owners. About GF GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented and diverse team delivers results with an unyielding focus on security, longevity and sustainability. For more information, visit www.gf.com. ©GlobalFoundries Inc., GF, GlobalFoundries, the GF logos and other GF marks are trademarks of GlobalFoundries Inc. or its subsidiaries. All other trademarks are the property of their respective owners. Media contacts Cara Walker Synopsys, Inc [email protected] [email protected] Kassidy Berger GlobalFoundries [email protected]
RFSOI, the key to addressing the challenges of cellular RF front-ends September 4, 2025 By Alex Margomenos Director, RF Product Management at GlobalFoundries Global data consumption is rising, in part due to the adoption of generative AI. The latest Ericsson Mobility report projects that worldwide mobile data traffic will grow by 2.3 times and reach 280 ExaBytes (1018 bytes) per month by 2030. To accommodate this growth, mobile operators, phone manufacturers, and standardization bodies must focus on expanding bandwidth, combining multiple data streams per channel, and improving data compression per symbol. These strategies have been implemented throughout the evolution of cellular standards and are expected to continue as technology advances towards 6G. For instance, 5G introduced additional frequency bands in the 3–6 GHz and millimeter wave frequency ranges, enhanced the implementation of MIMO spatial multiplexing, incorporated advanced beam steering techniques, and facilitated more sophisticated modulation schemes. Moreover, 5G increased the utilization of carrier aggregation, enabling both contiguous and non-contiguous bandwidth from single or multiple bands—including dual connectivity with 4G LTE bands—to be combined for greater data throughput. This approach, coupled with the standard’s inherent flexibility and scalability in numerology and waveforms (such as scalable subcarrier spacing, slot duration, and transmission bandwidths), delivers the improvements in spectral efficiency necessary to meet growing data demands. Providing all this functionality places significant demands on the RF front-ends, which are anticipated to increase as development advances toward 6G. These demands include: Supporting additional frequency bands requires more content in filters and RF components, making miniaturization and integration increasingly difficult while keeping the device form factor and size unchanged. More bands, closer together, reduce tolerance to interference, requiring improved filters and higher linearity components that generate lower harmonics in both the transmitter and receiver. New bands, flexible numerology and increased band combinations for carrier aggregation lead to more switches for band selection, antenna selection and antenna tuning. GF’s RFSOI technologies have been in the forefront for addressing these challenges for cellular switches and low noise amplifiers. In 2024, we introduced 9SW, our 4th generation RFSOI platform. Building upon its predecessor 8SW RFSOI technology, 9SW offers significant improvements in performance, integration and area advantages for front-end modules. 9SW is based on 90nm back-end-of-line lithography, offering significant opportunities for size reduction in digital circuits and switches. It offers enhanced Ron*Coff and improvements in power handling capabilities. In addition to switch and low noise amplifier devices, the platform includes a full suite of logic and analog FETs, circuit IP, large variety of capacitor and resistor options, and full RF design enablement. Finally, it includes 4 metal stack options with 3 to 5 levels of metal wiring including ultra-thick metal enabling high quality inductors and low loss transmission lines. In addition to the core offering, we are continuously updating the 9SW platform with new features intended to improve performance. In August, we introduced additional features offering analog circuit area compaction, low-leakage switch devices, and new passive elements. Beyond that we are planning future new feature releases on an annual basis to further improve switch power handling, Ron*Coff, and low noise amplifier performance. Supporting more frequency bands, which will only intensify as we start getting into 6G, increases the need for miniaturization and integration on a smartphone. To address this, we are introducing 9SW-SlateTM technology. Leveraging 9SW, our 9SW-SlateTM technology utilizes two bonded 9SW wafers to shrink the die size without compromising its performance. With this approach we fold large switch FETs in high-stack configurations, reducing the overall die area by up to 45% while maintaining the switch performance. In addition to releasing the technology and demonstrating its performance with reference designs, we are developing design enablement tools to help designers migrate two-dimensional circuits to three dimensions, accelerate prototyping and reduce design cycles. If you’re interested in learning more about 9SW and the rest of GlobalFoundries’ RF offerings in RFSOI, SiGe and RF GaN, please join us at the upcoming GF Technology Summits in Santa Clara, Shanghai and Munich, as well as our GlobalFoundries Technology Training for our Aerospace and Defense customers in Washington, D.C. Alex Margomenos oversees the product management of the RF Product Line at GlobalFoundries. The RF Product Line encompasses RFSOI, RF GaN, and SiGe technologies, which support cellular RF front-ends, satellite communications, aerospace and defense, and cellular infrastructure. He has been with GlobalFoundries for four years. Previously, he held managerial and individual contributor positions at Apple, Intel, Infineon, and HRL Laboratories.
格罗方德任命胡维多为中国区总裁，助力本土业务拓展 August 31, 2025 半导体行业资深专家将推动公司在华业务发展与战略合作伙伴关系建设 中国，上海，2025年9月1日——格罗方德（GlobalFoundries）今日宣布，任命半导体行业资深人士胡维多（Victor Hu）为销售副总裁兼中国区总裁。胡维多拥有超过25年半导体及技术领域领导经验，他将负责公司在中国这一关键增长市场的战略规划、新业务拓展以及合作伙伴关系建设。 格罗方德的中国战略旨在满足中国原始设备制造商（OEM）、无晶圆厂客户以及服务中国市场的跨国公司对本地生产芯片日益增长的需求。为此，公司正逐步深化本地布局，包括：扩大办公规模，并在北京和广州开设新办公室；通过其在广州的制造生态系统合作伙伴增芯科技实现本地生产；丰富其设计服务提供商网络，提供针对格罗方德技术量身定制的增值服务。 胡维多在Qorvo、宏达国际电子（HTC）和博通（Broadcom）任职期间，展现了推动增长、优化运营及构建战略伙伴关系的卓越能力。在他最近担任Qorvo大中华区及亚太区销售副总裁期间，曾主导了一系列市场拓展项目，显著提升了该地区市场份额，并推动了业务的变革性拓展。胡维多兼具工程和商业背景，拥有深厚的商业和技术专业知识，这使他成为引领格罗方德在中国下一阶段增长的理想人选。 格罗方德总裁兼首席运营官尼尔斯·安德斯库夫（Niels Anderskouv）表示：「格罗方德始终致力于维持可靠且地域多元化的全球制造布局。中国是我们持续创新的关键地区，也是我们为客户提供安全、核心芯片的重要生产基地，满足客户在指定地点生产的需求。我们非常高兴欢迎胡维多加入格罗方德领导团队。他丰富的行业知识和领导经验，将助力我们继续加强客户关系，提升本地制造能力。」 格罗方德中国区总裁胡维多表示：「我很荣幸能在这样一个激动人心的时刻加入格罗方德。中国的半导体产业正迅速发展，我期待与我们的合作伙伴、客户以及本地团队紧密合作，延续公司的发展势头，加速格罗方德在中国市场的业务增长。」 此次人事任命、业务扩张以及本地制造合作，共同彰显了格罗方德深耕中国的承诺，以及其满足中国OEM和无晶圆厂客户对本地制造芯片需求增长的策略，同时通过为在中国的跨国客户提供高质量、成熟节点的制造服务，支持全球供应链的韧性发展。 关于格罗方德 格罗方德（GlobalFoundries）是全球领先的半导体制造商之一，致力于为人们的生活、工作和互联提供核心支持。我们通过创新与客户紧密合作，为汽车、智能移动设备、物联网、通信基础设施及其他高增长市场交付更高能效、更高性能的产品。我们的全球生产足迹跨越美国、欧洲和亚洲，是全球客户信赖的技术来源。格罗方德拥有一支才华横溢的全球团队，他们始终以安全、持久和可持续为核心目标，全力交付卓越成果。欲了解更多信息，请访问www.gf.com。 ©GlobalFoundries Inc.、GF、GlobalFoundries、GF徽标和其他格芯标记是 GlobalFoundries Inc. 或其子公司商标。所有其他商标均为其各自所有者的财产。
GlobalFoundries Announces Production Release of 130CBIC SiGe Platform for High-Performance Smart Mobile, Communication and Industrial Applications August 28, 2025 Industry’s first high-performance complementary BiCMOS technology delivers performance and power advantages for essential markets and applications SANTA CLARA, Calif., August 28, 2025 – Today at its annual Technology Summit in California, GlobalFoundries (GF)(Nasdaq: GFS) announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, the company’s highest-performance silicon germanium (SiGe) technology to date. Now available for design with a process design kit (PDK), 130CBIC delivers unmatched performance with NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz—making it the only high-performance SiGe platform capable of addressing multiple key markets including smartphones, wireless infrastructure, optical networking, satellite communications and industrial IoT. Developed and manufactured at GF’s facility in Burlington, Vermont, 130CBIC is optimized to push the limits of RF performance in connected applications while reducing cost. For cellular smartphones, the platform enables low-noise amplifiers (LNAs) that reduce current consumption while maintaining ultra-low noise figure, helping to reduce battery drain. In the datacenter, the platform’s high-performance PNP transistors enable innovative amplifier topologies that deliver high gain-bandwidth at lower power for high-speed analog and optical networking. The platform also supports advanced mmWave industrial radar applications exceeding 100GHz, enabling high resolution sensing and distance ranging in a reduced form factor. “130CBIC represents a major milestone in our SiGe roadmap, setting a new benchmark for performance for the broad spectrum of high-growth markets that rely on advanced RF technologies for high-speed, energy-efficient connectivity,” said Shankaran Janardhanan, senior vice president of GF’s RF product line. “By combining industry-leading transistor performance with a low-mask count process, we’re opening new avenues of RF innovation to our customers across the board and enabling them to ramp new technologies to market faster.” 130CBIC is available for prototyping through GF’s GlobalShuttle multi-project wafer program, with shuttles scheduled through 2025 and 2026. RF reference designs are available through GF’s self-service GF Connect portal to help jumpstart the design process. About GF GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented global team delivers results with an unyielding focus on security, longevity, and sustainability. For more information, visit www.gf.com. Forward-looking information This news release may contain forward-looking statements, which involve risks and uncertainties. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. GF undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law. Media Contact: Stephanie Gonzalez [email protected]
GlobalFoundries Announces Availability of 22FDX+ RRAM Technology for Wireless Connectivity and AI Applications August 28, 2025 Latest technology in GF’s embedded memory portfolio is now available for prototyping SANTA CLARA, Calif., August 28, 2025 – Today at its annual Technology Summit in California, GlobalFoundries (Nasdaq: GFS)(GF) announced the availability of its 22FDX+ with Resistive RAM (RRAM) technology, marking a significant advancement in the company’s portfolio of embedded non-volatile memory (eNVM) solutions. The new RRAM technology, when combined with the high-performance, ultra-low power 22FDX® platform, delivers secure, low-latency, high-density embedded memory for code storage for wireless microcontrollers and AI IoT applications. Designed with industry-proven OxRAM technology, GF’s embedded RRAM offers cost-effective memory with low power read/write, high endurance and excellent retention. On-chip integration with GF’s enhanced 22FDX platform delivers improved data retention, reliability, security and power efficiency, creating compact and versatile system-on-chip (SoC) solutions for intelligent, connected devices. RRAM’s high density and scalability are ideal for AI-enabled, IoT devices that rely on high-performance intelligence at the edge, such as sensors, wearables and industrial systems. 22FDX+ RRAM also enables weight storage for neural networks, enabling more effective and complex networks. “We are pleased to add 22FDX+ RRAM to GF’s growing portfolio of differentiated technologies with the advanced features needed for power-efficient, connected intelligence at the edge,” said Ed Kaste, senior vice president of GF’s ultra-low power CMOS product line. “Our latest solution offers a compelling combination of density, performance and power efficiency, making it well-suited to tackle the challenges of next-generation, AI-enabled and connected devices.” “GlobalFoundries is an important partner for Nordic Semiconductor as we push the boundaries of ultra-low power wireless solutions for the next generation of connected products and AI-enabled devices,” said Oyvind Strom, EVP Short-Range at Nordic Semiconductor. “We welcome GF’s introduction of embedded RRAM as a significant advancement that enables secure, scalable, and power-efficient edge intelligence. This kind of innovation – delivered through a resilient global supply chain – is essential to meeting growing demands for performance, reliability, and sustainability in connected systems.” A macro preliminary design kit for 22FDX+ RRAM is available through GF’s self-service GF Connect portal to help jumpstart the design process. Volume production is slated for 2026, driven by several key customer engagements. Future generations of embedded RRAM technology and deployments to other platforms are in development. About GF GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented global team delivers results with an unyielding focus on security, longevity, and sustainability. For more information, visit www.gf.com. Forward-looking information This news release may contain forward-looking statements, which involve risks and uncertainties. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. GF undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law. Media Contact: Stephanie Gonzalez [email protected]
GlobalFoundries and Silicon Labs Partner to Scale Industry-Leading Wi-Fi Connectivity August 28, 2025 Strategic collaboration across the semiconductor value chain ensures a secure, reliable supply of essential chips for the next generation of consumer IoT SANTA CLARA, Calif., August 28, 2025 – Today at its annual Technology Summit in California, GlobalFoundries (Nasdaq: GFS) (GF) announced a milestone for its 40nm process technology through its partnership with Silicon Labs, the leading innovator in low-power wireless, with the shipment of more than 10 million Silicon Labs Wi-Fi units built on GF’s 40LP platform. This scaled production of wireless SoCs on 40LP, including Silicon Labs’ SiWX917 Wi-Fi 6 chip, is enabling the next generation of high-performance, energy efficient connected devices. Central to this partnership is GF’s expansive portfolio of cost-effective, feature-rich Complementary Metal-Oxide-Semiconductor (CMOS) solutions that deliver the right features for next-generation edge devices. GF’s silicon-proven 40LP process technology offers low leakage in standby mode to support power-efficient, always-on intelligent devices. The 40LP platform is an integral part of GF’s portfolio of advanced technologies for sensing applications, delivering an exceptional noise-to-signal ratio and ensuring accurate data capture for real-time monitoring. The Silicon Labs SiWX917 is a single-chip solution engineered to solve the most critical challenges for battery-powered IoT devices: extending battery life while maintaining a persistent, secure connection. This purpose-built IoT Wi-Fi 6 chip enables Silicon Labs to connect the entire IoT value chain by combining GF’s manufacturing excellence with the most prevalent wireless network in the world. This partnership showcases how high-performance wireless technology enables both the expansion of the IoT ecosystem and the creation of the intuitive, consistent user experiences that consumers have come to expect. “Our commitment is to provide the foundational manufacturing technology that allows innovators to push the boundaries of what’s possible in high-growth markets like consumer IoT,” said Kamal Khouri, senior vice president, feature-rich CMOS product line at GF. “We are proud to see our differentiated platforms empower Silicon Labs to deliver the cost-effective, high-performance solutions that top-tier brands depend on.” “For too long, device makers have had to choose between robust Wi-Fi connectivity and long battery life. Our mission is to eliminate that compromise,” said Irvind Ghai, vice president, Silicon Labs. “Our collaboration with GlobalFoundries is making it possible for us to deliver secure, reliable Wi-Fi connectivity at scale for the next generation of connected devices. This empowers innovators to focus on both painless onboarding, and a smooth user experience their customers expect, while getting their products to market faster.” About GF GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented global team delivers results with an unyielding focus on security, longevity and sustainability. For more information, visit www.gf.com. Media contact: Stephanie Gonzalez [email protected] About Silicon Labs Silicon Labs (NASDAQ: SLAB) is the leading innovator in low-power connectivity, building embedded technology that connects devices and improves lives. Merging cutting-edge technology into the world’s most highly integrated SoCs, Silicon Labs provides device makers the solutions, support, and ecosystems needed to create advanced edge connectivity applications. Headquartered in Austin, Texas, Silicon Labs has operations in over 16 countries and is the trusted partner for innovative solutions in the smart home, industrial IoT, and smart cities markets. Learn more at silabs.com. Note to editors: Silicon Labs, Silicon Laboratories, the “S” symbol, the Silicon Laboratories logo and the Silicon Labs logo are trademarks of Silicon Laboratories Inc. All other product names noted herein may be trademarks of their respective holders. For further information: CONTACT – [email protected]
GaN-on-Silicon: The scalable future of wireless infrastructure August 27, 2025 By Mark Cuezon Director, Wireless Infrastructure & SATCOM at GlobalFoundries Global mobile network data traffic continues to rise, driven by 5G expansion and high-demand applications like video streaming, gaming, and IoT connectivity. The latest Ericsson Mobility Report indicates mobile network data traffic rose 19% from the first quarter of 2024 to the first quarter of 2025, and with Fixed Wireless Access (FWA) traffic included, it is projected to nearly triple to 420 exabytes per month by 2030 [1]. This surge is due to more connected devices and higher average user data consumption, further fueled by better streaming quality, cloud gaming, AI apps, and Extended Reality. Expanding spectrum, especially above 6 GHz, is crucial to support this data growth and improve wireless capacity and coverage. With rising demand for high-performance wireless connectivity, efficient and scalable RF technologies are essential for keeping costs down. As networks move from 5G to 6G, infrastructure must handle higher frequencies, more bandwidth, and higher density, requiring solutions that optimize both performance and cost. Enter Gallium Nitride on Silicon (GaN-Si)—a technology that combines GaN’s high-power efficiency with silicon’s scalable manufacturing, paving the way for widespread adoption in next-generation radio access networks by lowering costs and speeding up deployment. While GaN-on-Silicon Carbide (GaN-SiC) has been favored for sub-6GHz 5G power amplifiers (PA) due to its high efficiency, outstanding thermal conductivity, and high-power density, GaN-Si is now positioned as a cost-effective, high-volume solution for RF applications. GF is driving the next wave of wireless infrastructure by positioning GaN-Si not merely as an alternative, but as a key enabler for next-generation wireless communications innovations. The RF challenge: Higher frequency, wider bandwidth, high efficiency As wireless infrastructure evolves from 5G to 6G, complexity rises. Mobile network operators (MNOs) and OEMs now face demands to support higher frequencies, broader bandwidths, and denser networks while needing to cut costs and power consumption for profitable deployment. According to an August 2024 report from Samsung, radios operating in FR1 n104 (6.425–7.125 GHz) and FR3 (7.125–24.25 GHz) bands are expected to at least double in number of antenna elements compared to today’s 5G sub-6GHz radios [2]. More antenna elements for the same radio total output power lower each antenna’s output power needs, favoring cost-effective solutions like GaN-Si over GaN-SiC. Higher frequencies allow closer antenna spacing, fitting more individual antenna elements into existing footprints but also raising the semiconductor count and BOM costs. This evolution in radio architecture enables the use of GaN-Si due to reduced power amplifier output requirements and establishes GaN-Si as a leading replacement for GaN-SiC for cost reduction. GaN-Si: Driving performance and scalability GaN-Si enables the integration of GaN epitaxy on large-diameter, high-yield 200mm silicon wafers, leveraging the same manufacturing infrastructure used in advanced CMOS technologies. This unlocks key advantages: Lower cost per RF device through economies of scale, as mentioned above Higher production throughput from established silicon fabs Potential for integrating multiple circuit blocks through heterogeneous integration or 3D stacking Although SiC substrates offer better thermal conductivity, the lower material and processing costs of GaN-Si compared to GaN-SiC make it ideal for high-volume uses like massive MIMO and small cells, supporting cost-effective RAN expansion. GaN-Si also achieves comparable RF performance in the mid to upper 5G FR1 (3.3–7.125 GHz) and 6G FR3 (7.125–24.25 GHz) bands. At GlobalFoundries, we are enabling GaN-on-Si to support a wide range of infrastructure applications: C-band (n77/n78) and n79 Massive MIMO radios 5G small cell and Open RAN platforms 6G FR3 architectures requiring broadband, high-linearity and efficiency PAs With silicon-based scalability, GaN-Si is also ideal for co-packaged RF solutions and hybrid integration—all key to next-gen wireless infrastructure platforms. Partnering for the future: GF’s GaN-Si roadmap At GlobalFoundries, we’re building the foundation for the next decade of wireless innovation. Our GaN-on-Si RF platform on 200mm wafers is designed to accelerate time-to-market for wireless infrastructure providers. We’re collaborating with ecosystem partners to drive innovation in packaging, thermal management, and RF circuit design—ensuring that GaN-Si not only meets today’s 5G demands but is also ready for the frequency, bandwidth, power, and efficiency challenges of 6G. Through GlobalShuttle, GF’s multi-project wafer (MPW) program, customers are able to efficiently and cost-effectively evaluate the potential of RF GaN-Si technology, thereby accelerating their product development cycles and reducing time to market. As wireless networks continue to evolve, wireless infrastructure providers must adopt technologies that strike a balance between performance and manufacturability. While GaN-SiC remains relevant for niche, ultra-high-power applications, GaN-Si is the path forward for scalable, high-efficiency RAN deployments. By transitioning to GaN-Si, MNOs and OEMs can unlock the benefits of GaN technology—without the economic limitations of legacy substrate materials. GlobalFoundries is proud to be at the forefront of this transition—powering the wireless future with scalable, efficient RF technologies. [1]: Ericsson Mobility Report June 2025 [2]: Samsung Research Report August 2024 Mark Cuezon is the Director of Wireless Infrastructure and SATCOM End Markets at GlobalFoundries, where he drives strategic growth and customer engagement across next-generation wireless connectivity networks and platforms.
