GLOBALFOUNDRIES and SiFive to Deliver Next Level of High Bandwidth Memory on 12LP Platform for AI Applications

Next generation high bandwidth memory solution based on GF’s most advanced FinFET platform aims to deliver capacity, speed and power for cloud based AI Applications

Santa Clara Calif. and Hsinchu, Taiwan, November 5, 2019 – GLOBALFOUNDRIES® (GF®) and SiFive, Inc. announced today at GLOBALFOUNDRIES Technology Conference (GTC) in Taiwan that they are working to extend high DRAM performance levels with High Bandwidth Memory (HBM2E) on GF’s recently announced 12LP+  FinFET solution, with 2.5D packaging design services to enable fast time-to-market for Artificial Intelligence (AI) applications.

In order to achieve the capacity and bandwidth for data-intensive AI training applications, system designers are challenged with squeezing more bandwidth into a smaller area while maintaining a reasonable power profile. SiFive’s customizable high bandwidth memory interface on GF’s 12LP platform and 12LP+ solution will enable easy integration of high bandwidth memory into a single System-on-Chip (SoC) solutions to deliver fast, power-efficient data processing for AI applications in the computing and wired infrastructure markets. 

As a part of the collaboration, designers will also have access to SiFive’s RISC-V IP portfolio and DesignShare IP ecosystem, which will leverage GF’s 12LP+ Design Technology Co-Optimization (DTCO), enabling them to significantly increase silicon specialization, improve design efficiency and deliver differentiated SoC solutions quickly and cost-effectively. 

“Extending SiFive’s reference IP platform, with HBM2E, on GF’s best-in-class performance 12LP+ solutiondelivers new levels of performance and integration for next generation SoCs and accelerators,” said Mohit Gupta, vice president and general manager, IP Business Unit at SiFive. “Deployment of highly optimized silicon requires highly customizable capabilities in order to realize the much-needed higher TOPS per milliwatt with low latency performance required for AI, while balancing the needs for low power and smaller area footprints.”

“At GF, we continue our commitment to providing differentiated FinFET specific application solutions and IP that allow our clients to develop performance enhanced products for AI applications,” said Ted Letavic, CTO of Computing and Wired Infrastructure at GF. “Together, with GF’s most advanced FinFET platform and SiFive’s unique design methodology, we will develop a unique high performance edge computing solution which empowers designers to take full advantage of the data deluge.”

GF’s 12LP+ an innovative new solution for AI training and inference applications, offers designers a high-speed, low-power 0.5Vmin SRAM bitcell that supports the fast, power-efficient shuttling of data between processors and memory. Moreover, a new interposer for 2.5D packages facilitates the integration of high-bandwidth memory with processors for fast, power-efficient data processing. 

SiFive’s HBM2E interface and custom IP solution on GF’s 12LP and 12LP+ are now under development at GF’s Fab 8 in Malta, New York. Clients can start optimizing their chip designs to develop differentiated solutions for high performance compute and edge AI applications in 1H 2020. 

About SiFive

SiFive is the leading provider of market-ready processor core IP and silicon solutions based on the free and open RISC-V instruction set architecture. Led by a team of seasoned silicon executives and the RISC-V inventors, SiFive helps SoC designers reduce time-to-market and realize cost savings with customized, open-architecture processor cores, and democratizes access to optimized silicon by enabling system designers in all market verticals to build customized RISC-V based semiconductors. With 15 offices worldwide, SiFive has backing from Sutter Hill Ventures, Qualcomm Ventures, Spark Capital, Osage University Partners, Chengwei, Huami, SK Hynix, Intel Capital, and Western Digital. For more information, www.sifive.com.

About GF

GLOBALFOUNDRIES (GF) is the world’s leading specialty foundry. We deliver differentiated feature-rich solutions that enable our clients to develop innovative products for high-growth market segments. GF provides a broad range of platforms and features with a unique mix of design, development and fabrication services. With an at-scale manufacturing footprint spanning the U.S., Europe and Asia, GF has the flexibility and agility to meet the dynamic needs of clients across the globe. GF is owned by Mubadala Investment Company. For more information, visit globalfoundries.com.

Contact:

Erica McGill
GLOBALFOUNDRIES
(518) 795-5240
[email protected]

 

 

芯动科技多样IP组合获得格芯22FDX®平台的物联网和边缘AI应用认证

全球领先的高端混合电路芯片/IP设计公司芯动科技(INNOSILICON)今天宣布,其多样IP产品组合已通过格芯® (GLOBALFOUNDRIES®)22FDX®平台的认证,现在,设计人员能为包括AI、物联网、汽车、工业和通信在内的各类应用提供差异化的产品。

GLOBALFOUNDRIES Appoints Amir Faintuch as SVP and General Manager Leading Computing and Wired Infrastructure Business

Appointment reinforces company’s commitment to deliver specialized application solutions to targeted market segments and enable clients’ data intensive applications

Santa Clara, Calif., October 30, 2019 – GLOBALFOUNDRIES (GF) announced today the appointment of Amir Faintuch as senior vice president and general manager of the company’s computing and wired infrastructure (CWI) strategic business unit (SBU). In this role, Faintuch will oversee the strategic direction, roadmap definition and client engagements of differentiated features for the company’s CWI SBU.

With more than 25 years of experience in the semiconductor, communications and software industries, Faintuch joins GF with a strong technology background and business acumen in computing, AI, cloud, connectivity, networking and wireless infrastructure. He aims to develop and drive GF’s go-to-market strategy that will support the demanding requirements for clients’ AI applications in the computing and wired infrastructure markets.

 “The growing demand for AI technology and high performance compute solutions represent a significant opportunity and long-term driver of our growth,” said Thomas Caulfield, CEO of GF. “Amir is a well-known industry veteran with an impressive record of successful execution at some of the most innovative technology companies. He brings a broad set of skills that include both deep technical understanding and business strategy related to computing, cloud, networking and application architecture. As GF continues to build its specialized application solutions to meet our clients’ evolving needs, Amir’s expertise will help further advance our strategic cloud and client offerings.”

Faintuch has held senior management and executive leadership roles at several leading semiconductor and telecommunications companies, including executive management roles at Intel. Most recently, he served as Senior Vice President and General Manager at Intel, where he played a key role in leading a major engineering transformation that increased product competitiveness and predictability. Faintuch is also a former Qualcomm executive, where he served as President of Qualcomm Atheros, a subsidiary of Qualcomm Inc. that develops networking, connectivity infrastructure and Internet of Things components. His previous positions also include senior executive positions at Texas Instruments.

“This is a new the era of ‘The Renaissance of Compute’, where the rise of silicon architecture is complemented by silicon processes and will drive new compute engines and emerging workloads,” said Faintuch. “I am excited to join GF to help drive this market transformation by leveraging GF’s specialized applications solutions that will enable its clients to differentiate and win in the market.”

The appointment comes on the heels of recent GF announcements including news on the appointment of Mike Hogan who will lead the company’s automotive, industrial and multi-market (AIM) SBU and the availability of 12LP+, GF’s new innovative solution for AI training and inference applications.

About GF

GLOBALFOUNDRIES (GF) is the world’s leading specialty foundry. We deliver differentiated feature-rich solutions that enable our clients to develop innovative products for high-growth market segments. GF provides a broad range of platforms and features with a unique mix of design, development and fabrication services. With an at-scale manufacturing footprint spanning the U.S., Europe and Asia, GF has the flexibility and agility to meet the dynamic needs of clients across the globe. GF is owned by Mubadala Investment Company. For more information, visit globalfoundries.com.

Contact:

Erica McGill
GLOBALFOUNDRIES
(518) 795-5240
[email protected]

格芯任命Amir Faintuch为高级副总裁兼总经理,负责计算和有线基础设施业务

这一任命加强了公司面向目标市场提供专业应用解决方案以及帮助客户实现数据密集型应用的能力

加利福尼亚州圣克拉拉,2019年10月30日 – 格芯® (GF®)今日宣布任命Amir Faintuch为计算和有线基础设施(CWI)战略业务部门(SBU)的高级副总裁兼总经理。任职后,Faintuch将负责CWI SBU差异化功能的战略方向、路线图定义和客户合作情况。

Faintuch拥有超过25年的半导体、通信和软件行业从业经验,能够为格芯带来计算、人工智能、云、连接、网络和无线基础设施领域强大的技术背景和敏锐的业务洞察力。Faintuch将致力于制定和推动格芯的市场战略,以满足计算和有线基础设施领域客户对人工智能应用的严苛要求。

格芯首席执行官Thomas Caulfield说道:“人工智能技术和高性能计算解决方案不断增长的需求为我们的发展带来了巨大的机会和长期动力。作为业内知名专家,Amir曾在多家创新技术公司担任过管理职位。他为格芯带来了多种技能,包括计算、云、网络和应用架构领域的深层技术理解和业务战略。随着格芯继续打造专业应用解决方案来满足客户不断发展的需求,Amir的专业知识能力将进一步推动我们的战略云和客户端产品。”

Faintuch曾在多家领先的半导体和电信公司担任高级管理和高层职位,包括在英特尔的高管职务。加入格芯之前,他在英特尔担任高级副总裁兼总经理,在大型技术变革中发挥了关键作用,助力提高产品竞争力和可预测性。Faintuch还曾担任高通子公司Atheros的总裁,负责网络、连接基础设施和物联网组件的发展。此外,他还曾在德州仪器担任高管职位。

Faintuch表示:“这是‘计算复兴’的新时代,硅工艺与硅架构互补,同时推动新计算引擎和新兴工作负载的发展。我很高兴能够加入格芯,利用格芯的专业应用解决方案来助力客户脱颖而出并在市场上获胜,从而推动这次市场变革。”

在公布此任命之前,格芯刚宣布任命Mike Hogan负责公司的汽车、工业和多重市场(AIM)战略业务部门,此外,公司还宣布推出12LP+,这是格芯针对人工智能训练和推理应用的创新型解决方案。

About GF

GLOBALFOUNDRIES (GF) is the world’s leading specialty foundry. We deliver differentiated feature-rich solutions that enable our clients to develop innovative products for high-growth market segments. GF provides a broad range of platforms and features with a unique mix of design, development and fabrication services. With an at-scale manufacturing footprint spanning the U.S., Europe and Asia, GF has the flexibility and agility to meet the dynamic needs of clients across the globe. GF is owned by Mubadala Investment Company. For more information, visit globalfoundries.com.

 

格芯和台积电宣布通过广泛的专利交叉授权解决其全球争端

加利福利亚圣克拉拉市及台湾新竹市,2019年10月28——格芯(GLOBALFOUNDRIES)和台湾积体电路制造公司(台积电)今日宣布将撤销两家公司相互之间的,以及涉及到任何客户的全部诉讼。两家公司已经同意,就各自在全球范围内的现有半导体专利以及未来十年内将要申请的专利,互相给予对方宽泛的专利有效期交叉许可。两家公司均将持续并大量投入半导体技术的研发。

这一决定确保了格芯和台积电可以自由地从事各自的经营活动,同时保证了其各自的客户可以持续地获得晶圆厂的完整的技术和服务。

“我们很高兴能够迅速达成和解,这一和解方案也表明了我们各自的知识产权的优势。今天宣布这一决定可以使得我们两家公司都能专注于技术创新以及为全世界的客户提供更优质的服务”,格芯的首席执行官Thomas Caulfield评论道。他还说道:“格芯和台积电之间的协议保护了格芯的增长能力,对于构成今天全球经济核心的半导体行业而言,这是整个行业的胜利。”

 “半导体行业竞争总是相当激烈,驱动参与者去创新,而这些创新活动丰富了全球成百上千万人们的生活。台积电投入了数百亿美元进行创新方能达到今日的领导地位”,台积电的总法务长方淑华评论道。“这一决定是积极的,使我们能专注于提升我们的客户对技术的需求,从而不断引入创新,赋能整个半导体行业的繁荣和兴盛。” 

关于格芯

格芯是全球领先的特殊工艺半导体代工厂,提供差异化、功能丰富的解决方案,赋能我们的客户为高增长的市场领域开发创新产品。格芯拥有广泛的工艺平台及特性,并提供独特的融合设计、开发和生产为一体的服务。格芯拥有遍布美洲、亚洲和欧洲的规模生产足迹,以其灵活性与应变力满足全球客户的动态需求。格芯为阿布扎比穆巴达拉投资公司(Mubadala Investment Company)所有。欲了解更多信息,请访问 https://www.globalfoundries.com/cn

关于台积公司

台积公司成立于1987年,率先开创了专业集成电路制造服务之商业模式,并一直是全球最大的专业集成电路制造服务公司。台积公司以业界先进的工艺技术及设计解决方案组合支持一个蓬勃发展的客户及伙伴的生态系统,以此释放全球半导体产业的创新。

2019年,台积公司全球总产能超过1,200万片之十二吋晶圓约当量,台积公司并提供最广泛的工艺技术,全面涵盖自2微米工艺至最先进的工艺技术,即现今的7纳米工艺。台积公司是首家提供7纳米工艺技术为客户生产晶圆的专业集成电路制造服务公司,同时亦领先业界导入极紫外光(EUV)微影技术协助客户产品大量进入市场。其总部位于台湾新竹。更多资讯请至台积公司网站:www.tsmc.com.tw查询。

Contact:

Laurie Kelly, GLOBALFOUNDRIES
VP Global Communications 
+1 (518) 265-4580 
[email protected]

Elizabeth Sun, TSMC
Senior Director of Corporate Communications
+886 3 568-2085
[email protected]

GLOBALFOUNDRIES and TSMC Announce Resolution of Global Disputes Through Broad Global Patent Cross-License

Santa Clara, CA and Hsinchu, Taiwan, R.O.C. Oct. 28, 2019 — GLOBALFOUNDRIES (GF) and TSMC today announced they are dismissing all litigation between them as well as those that involve any of their customers. The companies have agreed to a broad life-of-patents cross-license to each other’s worldwide existing semiconductor patents as well as those patents that will be filed during the next ten years as both companies continue to invest significantly in semiconductor research and development. 

This resolution guarantees GF and TSMC freedom to operate and ensures that their respective customers will continue to have access to each foundry’s complete array of technologies and services.

“We are pleased to have quickly reached this settlement that acknowledges the strength of our respective intellectual property. Today’s announcement enables both of our companies to focus on innovation and to better serve our clients around the world,” said Thomas Caulfield, CEO of GF. “This agreement between GF and TSMC secures GF’s ability to grow and is a win for the entire semiconductor industry which is at the core of today’s global economy.” 

“The semiconductor industry has always been highly competitive, driving the players to pursue innovation that enriched the lives of millions of people around the world. TSMC has invested tens of billions of dollars towards innovation to reach our leading position today,” said Sylvia Fang, General Counsel for TSMC. “The resolution is a positive development that keeps our focus on advancing the needs of our customers for technologies that will continue to bring innovation to life, enabling the entire semiconductor industry to thrive and prosper.”

About GLOBALFOUNDRIES

GLOBALFOUNDRIES (GF) is the world’s leading specialty foundry. We deliver differentiated feature-rich solutions that enable our clients to develop innovative products for high-growth market segments. GF provides a broad range of platforms and features with a unique mix of design, development and fabrication services. With an at-scale manufacturing footprint spanning the U.S., Europe and Asia, GF has the flexibility and agility to meet the dynamic needs of clients across the globe. GF is owned by Mubadala Investment Company. For more information, visit globalfoundries.com.

About TSMC

TSMC pioneered the pure-play foundry business model when it was founded in 1987, and has been the world’s largest dedicated semiconductor foundry ever since. The company supports a thriving ecosystem of global customers and partners with the industry’s leading process technology and portfolio of design enablement solutions to unleash innovation for the global semiconductor industry. 

TSMC serves its customers with global capacity of more than 12 million 12-inch equivalent wafers per year in 2019, and provides the broadest range of technologies from 2 micron all the way to foundry’s most advanced processes, which is 7-nanometer today. TSMC is the first foundry to provide 7-nanometer production capabilities and the first to commercialize Extreme Ultraviolet (EUV) lithography technology in delivering customer products to market in high volume. TSMC is headquartered in Hsinchu, Taiwan. For more information about TSMC please visit https://www.tsmc.com.

Contact:

Laurie Kelly, GLOBALFOUNDRIES
VP Global Communications 
+1 (518) 265-4580 
[email protected]

Elizabeth Sun, TSMC
Senior Director of Corporate Communications
+886 3 568-2085
[email protected]

GF Ready with a ‘Body Bias Ecosystem’

By Dave Lammers

GF has had some success with the 22FDX technology, but in the conservative semiconductor industry, getting a new technology up-and-running takes time and effort. After several years of laying the groundwork, the time is now for FDX, as 5G, automotive, and RF-enabled IoT devices all represent fast-growing markets for the fully depleted SOI technology.  

Ed Kaste, vice president of Industrial and Multi-Market at GF, told a GLOBALFOUNDRIES Technology Conference (GTC 2019) breakout session that GF expects to ship about 100 million 22FDX devices this year. 

One volume design win came in the power management space, where FDX’s advantages in analog, RF and low-power operation provided an edge over bulk devices. Jamie Schaeffer, a senior director of Mobility and Wireless Infrastructure Market at GF, said, “we believe that showing what FDX can do in that power management application will help us going forward to gain other high-volume design wins in the IoT space. “While the power management die are relatively small and the number of wafers required is not huge, Schaeffer said it is an example of how 22FDX – even without body biasing coming into play — has shown that it “is simply a better transistor.” At .5V, which is where many of the design wins have been targeted, the SOI-based FDX technology consumes much less power, has far less leakage, and the RF performance has “exceeded even GF’s initial expectations,” Schaeffer said at GTC 2019, held in Santa Clara in late September.

The sense I got at the conference is that it is just now that all the pieces are coming together for the FDX technology – more pieces than can be described in this one blog, so I’d like to focus mainly on the adaptive body bias capability. 

Very few of the FDX design wins have used body bias, partly because not many designers have heretofore been able to readily implement body biasing to improve performance or reduce power consumption. And in some use cases, the IP that was used to implement body biasing itself consumed a fair amount of power, negating some of the overall gains in power consumption. 

Body Bias Ecosystem Ready

But all that is changing. Adaptive body biasing (ABB) is now fully supported, and overall a much deeper FDX IP library is available from several IP vendors, including Synopsys for automotive-use applications, ARM for IoT CryptoIsland™security, IP from VeriSilicon, and several others. 

Schaeffer told the GTC participants “body biasing is arguably the most differentiating capability of FDX, but it has not been widely adopted because the complete body-biasing ecosystem has not been there. Over the last couple of years, we have built the first body-bias ecosystem, including the libraries and memories with process, voltage, temperature, and body bias characterization. There are body bias generators, and reference designs from Cadence and Synopsys. We are ready, from design and planning all the way through characterization and test.”

Schaeffer said the goal is to “simplify the use cases for our customers. There is no limit to what a creative designer can do with body biasing, but to some extent we overcomplicated it. To simplify the design cycle, we are enabling our customers to compensate for the process with body biasing. That alone will provide for up to a 30 percent improvement in the performance of the design. When you think about it, that is similar to a half-node or full-node improvement with just a design tweak.”

Schaeffer announced at GTC that ARM’s built-in security IP, called integrated Secure Element (iSE), is now supported on the 22FDX platform, making it easier for IoT device designers to gain security certification.  

ARM’s integrated Secure Element (iSE) IP, now available for 22FDX-based SoCs, lowers the barrier for entry for silicon vendors requiring high-security standards
(Source: GTC 2019)

ARM’s integrated Secure Element (iSE) IP, now available for 22FDX-based SoCs, lowers the barrier for entry for silicon vendors requiring high-security standards
(Source: GTC 2019)

Key IP from Dolphin Design

Philippe Berger, the CEO of Dolphin Design (Meylan, France), said 30 of his engineers this year developed IP and test-chips that support adaptive (forward or reverse) body biasing (ABB) on the FDX platform (a forward bias lowers the threshold voltage to boost performance, while a backward bias raises the Vt to reduce leakage current).

The ABB feature allows designers to leverage forward and reverse body bias techniques to dynamically compensate for process, supply voltage, temperature (PVT) variations and aging effects. Dolphin’s IP embeds the body bias voltage regulation, PVT monitors and aging sensors, and a control loop. As the sensors monitor the PVT characteristics, “the bulk voltage can be adjusted to bring back the transistor characteristics to where you want them to be,” Berger said.

The Dolphin IP, he said, “provides a design methodology to fully leverage the benefits of corner tightening.” Dolphin signed a contract to develop the ABB intellectual property with GF in January of this year, and the IP is now available. While the customer licenses the IP from Dolphin, Berger said it is free of charge as “GF-sponsored” IP. 

“Basically, almost no one is using body biasing today, because the design environment was not there,” Berger said, predicting that “going forward,  body biasing solutions will be important, particularly as designers incorporate RF with the rest of the circuitry.” The BodyBiasing capabilities arrive as the 5G cellular and IoT markets blossom, Berger said, with BB used widely in the power amplifier (PA) and low-noise amplifier (LNA) functions. 

Dolphin’s adaptive body bias (ABB) IP is part of GF’s body-bias ecosystem, designed to improve performance, latency, and energy efficiency.
Source: GTC 2019)

Dolphin’s adaptive body bias (ABB) IP is part of GF’s body-bias ecosystem, designed to improve performance, latency, and energy efficiency.
Source: GTC 2019)

Bhaskar Kolla, vice president of customer engineering at Invecas, Inc., said Invecas has created a standard cell library with the right corner characterizations for applying adaptive body biasing. The “hooks” in the Invecas libraries work together with the ABB IP from Dolphin. “The Dolphin IP will make it easier to use dynamic (adaptive) biasing. Some customers have used static (forward) biasing, but with adaptive biasing the customers can use either forward or backward biasing. Our libraries now support that,” Kolla said.

John Pellerin, chief technologist, Platforms and vice president, Worldwide R&D at GF, said there are further ABB advantages coming in the next-generation FDX process, 12FDX. The well structures in the 22FDX process require that the body bias condition for a given circuit block to be pre-determined, plus or minus from nominal voltage, while with the 12FDX process it will be possible to switch the bias in either direction at a very fine granularity of circuitry. “I like to compare it to a street. With 22FDX it is like a city block where traffic can only go in one direction, while with 12FDX traffic within that city block can go in both directions.”

GF has reorganized, creating one division that handles the process platforms, IP, and other design-enablement elements for Automotive, Industrial, and Multi-Market (AIM) applications, the latter encompassing IoT-type markets such as low-power cellular networks used in agriculture and smart cities, medical, wearable electronics, smart homes, and several others. 

Kaste told the GTC audience that despite a pullback from earlier hype about the growth of the IoT market, he believes “we hope to demonstrate that it is absolutely taking off now,” with the AIM markets of automotive, industrial, and multi-market growing to 24 billion units in 2022. Moreover, nearly all of that AIM market (98 percent) will use design rules of 12nm and larger “until 2022 and beyond.” 

Every Watt Counts

To make those predictions become reality, limiting energy consumption is paramount, representing a great opportunity for the FDX technology.  The billions or even trillions of connected devices must be drawing extremely low power. As Synopsys co-CEO Aart de Geus noted in his keynote address at GTC, in an era of global warming, “every Watt counts.”

The combination of 5G networks, enabling AI-enhanced IoT devices to send much larger amounts of data to the cloud, represents a multiplier effect. “IoT, multiplied by 5G, will create immense amounts of data being sent to the cloud. But that represents unbelievable amounts of energy demand, coming at a time when everyone must be concerned about climate change. The very survivability of the planet is at stake,” de Geus said.

 

VeriSilicon Releases Most Advanced FD-SOI Design IP Platform on GLOBALFOUNDRIES 22FDX for Edge AI and IoT Applications

VeriSilicon, a Silicon Platform as a Service (SiPaaS®) company, today announced its comprehensive FD-SOI Design IP Platform with more than 30 IPs based on GLOBALFOUNDRIES® (GF®) 22FDX® platform. The IP Platform includes low-power, low-leakage and high-density memory compiler IPs and various key mixed signal IPs enabling VeriSilicon to provide a one-stop silicon design service to customers designing for AIoT (Artificial Intelligence + Internet of Things) applications on GF’s 22FDX with mature IPs to shorten custom design cycles and reduce their R&D costs.

Innosilicon’s Broad IP Portfolio Qualified on GLOBALFOUNDRIES 12LP FinFET Platform for High-Performance Applications

Innosilicon, the world-class innovative fabless  IP design and customized ASIC company, announced today that its comprehensive IP portfolio has been qualified on GLOBALFOUNDRIES®  (GF ®) 12nm Leading-Performance (12LP)  platform, enabling designers to deliver differentiated products to a broad set of demanding compute-intensive applications including artificial intelligence and virtual reality to high-end smartphones and networking infrastructure. Innosilicon’s GDDR6 is design ready and has taped out on GF’s 12LP.

格芯“体偏置生态系统”蓄势待发

作者:Dave Lammers

格芯在22FDX技术方面已经取得了一些成功,但是在保守的半导体行业中,要让新技术投入使用是一个耗时耗力的过程。经过几年的基础夯实,同时5G、汽车和射频物联网设备都意味着全耗尽式SOI技术市场的快速增长,现在正是FDX大展拳脚的时候。

格芯工业和多市场业务部副总裁Ed Kaste在格芯技术大会(GTC 2019)分组会议上介绍道,格芯预计22FDX器件今年的出货量将达1亿个。

在电源管理领域的一个量产设计中标中,FDX在模拟、射频和低功耗工作方面的优势与体硅相比,更胜一筹。格芯移动与无线基础设施市场部高级总监Jamie Schaeffer表示:“我们相信通过展示FDX在该电源管理应用中可实现的性能,将有助于我们在物联网领域赢取其他大批量设计中标。”虽然该电源管理芯片相对较小,所需的晶圆数量也不是很多,但Schaeffer表示,这是一个范例:展示了即使未启用体偏置,仅22FDX“也是一个性能更出色的晶体管”。Schaeffer在9月下旬于圣克拉拉举行的GTC 2019上介绍道,在0.5V电压下(许多设计中标的目标电压),基于SOI的FDX技术功耗更小、漏电流更低,而且射频性能甚至“超出了格芯的初始期望值”。

我在会议上的感受到,目前,FDX技术所需的方方面面都汇集到一起,种类繁多,这篇博客无法一一加以介绍,因此,我将重点关注自适应体偏置功能。

FDX设计中标中很少采用体偏置,部分原因是迄今为止还没有多少设计人员能够轻松实现体偏置以达到性能提升或功耗降低。在某些用例中,用于实现体偏置的IP本身就消耗了相当大的功耗,从而抵消了总体功耗收益。

体偏置生态系统就绪

但是,一切都在改变。市场现在已经完全支持自适应体偏置(ABB),总的来说,可以从多家IP供应商处获得更深入的FDX IP库,包括面向汽车应用的Synopsys、面向物联网CryptoIsland™安全性的ARM,以及来自芯原的IP等等。

Schaeffer向GTC与会者表示:“体偏置无疑是FDX最具差异化的能力,但由于没有完整的体偏置生态系统,因此它尚未得到广泛采用。在过去几年里,我们建立了首个体偏置生态系统,包括带有工艺、电压、温度和体偏置表征的库和存储器。该生态系统还包括体偏置发生器,以及来自Cadence和Synopsys的参考设计。从设计和规划一直到表征和测试,我们已经全部准备就绪。”

Schaeffer表示,其目标是“为客户简化用例。富有创意的设计人员如何使用体偏置并不受任何限制,只是在某种程度上,我们将它过度复杂化了。为了简化设计过程,我们让客户能够利用体偏置来补偿工艺。仅此一项,就可以使设计性能提高多达30%。仔细想想,该设计与半代工艺或全节点改进类似,只需进行一个设计微调即可。”

Schaeffer在GTC上宣布,22FDX平台现已支持ARM的内置安全IP(称为集成安全元件(iSE)),从而让物联网设备设计人员能够更轻松地获得安全认证。 
 

ARM的集成安全元件(iSE) IP现可用于基于22FDX的SoC,降低高安全性标准芯片供应商的进入门槛
(资料来源:GTC 2019)

来自Dolphin Design的关键IP

Dolphin Design(总部位于法国梅朗)首席执行官Philippe Berger表示,公司30位工程师今年开发出了IP和测试芯片,可支持FDX平台上的自适应(正向或反向)体偏置(ABB)(正向偏置降低阈值电压以提高性能,而反向偏置则提高Vt以降低漏电流)。

ABB功能让设计人员可以利用正向和反向偏置技术,动态补偿工艺、电源电压、温度(PVT)变化以及老化影响。Dolphin的IP嵌入了体偏置电压调节、PVT监视器、老化传感器以及控制环。Berger表示,当传感器监视PVT特性时,“可调节体电压,使晶体管恢复到您所需要的特性”。

他还表示,Dolphin IP“提供了能够充分利用工艺角紧固优势的设计方法论”。Dolphin与格芯于今年1月签署了合同,共同开发ABB知识产权,目前已可提供该IP。Berger介绍道,客户从Dolphin获得IP许可时,它是作为“格芯赞助”的IP免费提供的。

Berger表示:“基本上,目前几乎没人在使用体偏置,因为没有设计环境。”他还预测道:“今后,体偏置解决方案将至关重要,特别是当设计人员要将射频与其余电路结合在一起时。”Berger表示,体偏置功能随着5G蜂窝和物联网市场的蓬勃发展应运而生,体偏置(BB)将广泛应用于功率放大器(PA)和低噪声放大器(LNA)功能。

Dolphin的自适应体偏置(ABB) IP是格芯体偏置生态系统的一部分,旨在改善性能、延迟和能耗。
(资料来源:GTC 2019)

Invecas, Inc.客户工程部副总裁Bhaskar Kolla表示,Invecas已经创建了一个标准的单元库,该库具有适合于自适应体偏置的工艺角表征。Invecas库中的“hook”可将Dolphin的ABB IP调入系统一起工作。Kolla表示:“Dolphin IP将使得动态(自适应)偏置更易于使用。一些客户已经使用了静态(正向)偏置,但是借助自适应偏置,客户既可以使用正向偏置,也可以使用反向偏置。我们的库现已支持这一功能。”

格芯平台首席技术专家兼全球研发部副总裁John Pellerin表示,新一代FDX工艺12FDX中将搭载更多ABB优势。22FDX工艺中的阱结构要求预先设置好给定电路模块的体偏置条件(对标称电压进行加/减),而采用12FDX工艺时,则能够以非常精细的电路粒度在两个方向上任意切换偏置。“我可以将它比作街道。采用22FDX时,就像是在城市街区中的车流只能单向行驶,而采用12FDX时,该城市街区中的车流可以双向行驶。”

格芯经过重组,组建了一个新部门,负责面向汽车、工业和多市场(AIM)应用的处理平台、IP和其他设计支持元件,其中多重市场涵盖了物联网市场,例如用于农业、智能城市、医疗、可穿戴电子产品、智能家居等领域的低功耗蜂窝网络。

Kaste告诉GTC观众,尽管早先对物联网市场增长的炒作有所降温,但他相信,随着AIM市场(汽车、工业和多市场)到2022年将增长达到240亿单位,“我们希望证明它即刻必将起飞”。此外,几乎所有AIM市场(98%)都将采用12nm设计规则,而且这一比例“到2022年及以后”将更高。

每一度电都至关重要

为了使这些预测成为现实,限制能耗成为当务之急,这对于FDX技术而言是个巨大的机会。数十亿乃至数万亿台连接设备必须功耗极低。正如Synopsys联合首席执行官Aart de Geus在GTC的主题演讲中指出的那样,在全球变暖的时代,“每一度电都至关重要”。

5G网络融合使AI增强型物联网设备能够将大量数据发送至云,产生倍增效应。de Geus表示:“物联网与5G的乘积作用,将产生海量数据来发送至云。但这意味着令人难以置信的能源需求,而这个时代人人都在关注气候变化。地球的生存能力受到威胁。”