GLOBALFOUNDRIES Broadens SiGe Power Amplifier Portfolio, Enhancing RF Performance and Efficiency for Wireless Devices March 15, 2016New PAx offerings enable customers to exploit optimized balance of performance, integration, and cost to meet the demands of evolving mobile standards Santa Clara, Calif., March 15, 2016 – GLOBALFOUNDRIES today announced new advanced radio-frequency (RF) silicon solutions, further expanding the portfolio of Silicon Germanium (SiGe) power amplifier (PA) technologies designed to enable performance-optimized cellular and Wi-Fi solutions in increasingly sophisticated mobile devices and hardware. GF’s 5PAx and 1K5PAx, together called PAx, are the latest extensions to its broad family of SiGe-based PA technologies. The advanced offerings deliver optimized PA, LNA and switch technology with improved power efficiency, noise figure and insertion loss enabling more power efficient next-generation Wi-Fi and cellular solutions for faster data access and uninterrupted connections. “Mobile suppliers are facing mounting pressure to expand network capacity as wireless data consumption continues to increase rapidly,” said Dr. Bami Bastani, senior vice president of GF RF business unit. “Our broad portfolio of high-performance SiGe power amplifier technologies provides a distinct design, performance and cost advantage that enables our mobility customers to deliver cost-effective solutions with faster data throughput, support wider coverage areas, and consume less power.” Skyworks, a leader in high-performance analog semiconductor solutions, plans to use the technology to enhance both the power capability and efficiency for the next generation of mobile WLAN products and high-performance WLAN products, including access points, routers and IoT applications. “The advances that are part of GF’s SiGe PAx technologies enable RF front-end solutions for all levels of performance and complexity,” said Bill Vaillancourt, vice president and general manager of Mobile Connectivity at Skyworks Solutions. “With these advanced features and the ability to minimize form factor by implementing multiple RF functions on a chip, GF’s latest PAx offerings enhance the capabilities of integrated semiconductor solutions that support customers’ needs for high performance, cost effective technologies addressing portable wireless communication devices.” There are four technologies in GF’s SiGe PA family, SiGe 5PAe, 1KW5PAe, and now 5PAx and 1K5PAx. All four offerings feature GF’s proven through-silicon via technology and provide significant performance, integration functionality and cost advantages for customers who are currently using gallium arsenide (GaAs)-based alternatives. Today, there are more than three billion SiGe power amplifiers shipped worldwide using this family of technologies, and GF has recently invested in additional manufacturing capacity to address the anticipated growth in the mobile sector. The newest offerings, 5PAx and 1K5PAx, are optimized to meet the rigorous demands of evolving mobile standards like 802.11ac, which demands three times faster data throughput than the previous generation of standards. For 5GHz applications, SiGe 5PAx, the follow-on to SiGe 5PAe, supports 2dB gain along with a 5 percent PAE and 0.2dB low noise amplifier (LNA) improvements relative to the previous generation. SiGe 1K5PAx, like its predecessor 1KW5PAe, is built on a high-resistivity substrate, and is tuned for integration and higher performance. It features RF switches with approximately 15 percent better Ron-Coff compared to 1KW5PAe, and like 1KW5PAe, enables designers to minimize form factor by implementing multiple functions, such as power amplifiers, RF switches and LNAs, on a single chip. For more information on GF’s SiGe Technologies solutions, contact your GF sales representative or go to globalfoundries.com/SiGe. About GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Contacts: Erica McGillGF(518) 305-5978[email protected]
IoT is Now! Part II March 15, 2016By Rajeev Rajan In my last blog, IoT is Now!, I provided a bird’s eye view of the IoT landscape. In this post, I will dive deeper into the IoT by the numbers, slowly peeling back the onion to reveal what part of the Things, Networks, and Data Centers we play in. According to the McKinsey report The Internet of Things: Mapping the Value Beyond the Hype, the IoT will have $3.9-11.1 trillion in economic impact per year by 2025 including $200-$700 billion in automotive, $200-$350 billion in the home, and $1.2-$3.7 trillion in factory operations and equipment optimization. This value is not measured purely in technologies sold, but in significant efficiencies generated. We are currently in a mobile computing or smartphone era that’s shifting to pervasive computing—primarily IoT—and will eventually evolve into intelligent computing. Have we forgotten that IoT isn’t something new? It’s been around for more than a decade. And, its progress and growth have been driven from a foundational technology architecture that is still being used today. This growth is significantly influenced by continued technology development. At the heart of it, we are enabling industries to spawn based on the capabilities that we give them. We enable progress and growth by maintaining a technology advantage, making it easy for customers to do business with us, and maintaining a competitive cost structure for the industry. In this sense, every ounce of efficiency we’re able to find in manufacturing, every single technology innovation that helps manage power—even in the smallest fraction—and every breakthrough in RF implementation for connectivity, are significant steps to fully realize the potential of the IoT. Success in the IoT is a fundamentally diverse effort, with continued success coming from partnerships among large and small companies alike, empowering them to define the IoT across a range of industries. At SEMICON China, IoT is a hot topic, with a forum devoted to this theme: Technology Shapes the Future-Sensor Hub Solution for Wearable and IoT on March 17. During this session, I will discuss enabling semiconductor technologies that drive the IoT and the “atoms of intelligence” that lead to Intelligent Computing. And in my next blog, we’ll explore the amazing IoT applications that wouldn’t be possible without a strong process technology powering the semiconductors that are “under the hood.” It’s an incredible vertical integration story with many turning gears and we’ll dissect key sections of this “under the hood” story in each blog. I invite you to join me.
格芯发布新7SW SOI射频PDK 配备了独特的最新Keysight技术ADS软件 March 10, 20162016年3月10日 协同设计流程通过利用最佳EDA设计平台来简化射频设计 加州圣克拉拉，2016年3月10日—格芯今天宣布全新的PDK套装已可投入使用。该套装配备了可协同操作的合作设计流程来帮助芯片设计者有效的改进设计，展现独特射频前端方案，以应对日益复杂精密的移动设备。 针对移动设备和高频高带宽无线基建应用的射频芯片，格芯的射频绝缘体上硅（RF SOI）技术可以前端射频方案中提供重要的性能表现、集成和面积优势。格芯最高端的RFSOI技术，7SW SOI专门为下一代智能手机的多波段射频交换器而优化，并持续的推动物联网应用的革新。 这些应用的高频和大信号设计正在变得富有挑战性，所以迫切的需求协同操作的合作设计流程。EDA软件被设计成可以和Keysight Technology高级设计系统一起使用，这个格芯的新7SW SOI PDK让设计者可以在设计系统里使用简单的Si2 OpenAccess数据库进行设计修改。 RFIC协同操作性简化了设计流程，使设计者可以在ADS中的单一设计数据库里工作。协同操作能力同样让设计者可以在设计系统里修改仿真电路图。同样，布局线路图也可以被执行同样的操作。例如，某位用户可以在系统里打开IC的布局图单位，将它在模块或套装中存为独立的示例，然后对完整设计进行电磁仿真来验证整体系统的性能。 “在为我们的5PAe SiGe产品发布了第一款合作设计PDK后，现在我们正在将它的应用范围拓展到最高端的RFSOI技术（7SWSOI）上。我们的7SW平台配备了超级LNA、交换器设备和富陷基底，并提供了改进的设备信号接收、干扰抗性和电池寿命来实现更少的通话中断和更长的通话时长。”格芯产品时长部与业务发展部高级主管Peter Rabbeni说道，“我们的RFSOI技术已经为我们在手机通信前端模块应用方面极大的吸引了行业的关注，现在RFIC协同功能将让我们通过一个单独的PDK为7SW客户提供额外的设计灵活性。” “格芯的客户现可接触射频设计流程工具，该工具是基于OpenAccess的硅设计PDK，”Silicon RFIC产品市场经理Volker Blaschke说道，“新的协同开发功能通过使用单OpenAccess设计数据库来使设计过程更加便捷，省去了由于跨越不同自动化设计软件带来的多余步骤。” 了解更多详情关于格芯RF SOI方案，请联系格芯销售代表或登录： https://www.globalfoundries.com. Erica McGill (518) 305-5978 [email protected]
GLOBALFOUNDRIES Releases New 7SW SOI RF PDK Featuring Latest Keysight Technologies Advanced Design System Software March 10, 2016Co-design flow exploits the best of EDA design platforms to simplify RF design Santa Clara, Calif., March 10, 2016 — GLOBALFOUNDRIES today announced the availability of a new set of process design kits (PDKs) with an interoperable co-design flow to help chip designers improve design efficiency and deliver differentiated RF front-end solutions in increasingly sophisticated mobile devices. GF’s RF Silicon-on-Insulator (RF SOI) technologies offer significant performance, integration and area advantages in front-end RF solutions for mobile devices and RF chips for high-frequency, high-bandwidth wireless infrastructure applications. GF’s most advanced RF SOI technology, 7SW SOI, is optimized for multi-band RF switching in next-generation smartphones and poised to drive innovation in Internet of Things (IoT) applications. The challenges of high-frequency and large-signal design in these applications have increased the need for an interoperable co-design flow. Designed for use with Keysight Technologies’ Advanced Design System (ADS) EDA software, GF’s new 7SW SOI PDKs allow designers to edit their designs in ADS using a single Si2 OpenAccess database without any interference. The RFIC interoperability simplifies the design process by enabling the user to work from a single design database in ADS. This allows the user to edit and simulate schematic designs created in ADS. The same is true for layout where, for example, a user can open an IC layout cell view in ADS, instantiate the cell within a package or module, and then run an electromagnetic simulation on the complete design to validate its overall system performance. “After releasing the first co-design PDK for our 5PAe silicon germanium offering, we are now extending our coverage of ADS PDK to our most advanced RF SOI technology, 7SW SOI. Our 7SW platform, with superior LNA, switch devices, and trap-rich substrates, offer improved devices reception, interference rejection, and battery life for fewer dropped calls and longer talk time,” said Peter Rabbeni, senior director of RF product marketing and business development at GF. “Our RF SOI technology has gained significant industry traction for cellular front-end module applications, and the new RFIC interoperability feature will allow us to provide our 7SW customers additional design flexibility with a single PDK.” “GF customers can now access ADS’ dedicated RF design flow tools based on an OpenAccess based silicon PDK,” said Volker Blaschke, Silicon RFIC product marketing manager, Keysight EEsof EDA. “The new interoperability feature facilitates the design process by using a single OpenAccess design data library, removing redundant steps of keeping the design across different EDA environments in sync.” For more information on GF’s RF SOI solutions, contact your GF sales representative or go to www.globalfoundries.com. About GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Erica McGillGF(518) 305-5978[email protected]
格芯任命Alain Mutricy作为产品管理团队负责人 March 3, 2016 加利福尼亚州圣克拉拉市 2016年3月3日— 格芯是一家先进半导体制造技术的供应商。格芯今天宣布，Alain Mutricy加入格芯公司担任产品管理集团的高级副总裁。在这个职位上，Mutricy将会负责公司的领先和主流技术解决方案，针对这些差异化产品的上市活动。 Mutricy将继任Mike Cadigan目前的这个职位。而Mike将会被调动到一个新的职位，成为负责格芯全球销售和业务发展的高级副总裁。 格芯公司的首席执行官(CEO) Sanjay Jha表示：“Alain是一位成功的高级管理人才。他在消费电子，移动和半导体行业拥有超过25年的经验。 他带来强大的成功形象,帮助实现全球产品组织的增长，盈利和竞争力提升。这将有助于他在我们已经成熟的产品管理集团基础上大施拳脚。我非常地欢迎Alain来到格芯的团队。” 在加入GF之前，Mutricy是AxinNOVACTION公司的创始人兼执行顾问，AxinNOVACTION是一家咨询公司，该公司致力于开发和加速大型组织的创新行动。Mutricy也是Vuezr公司的联合创始人兼首席执行官。Vuezr公司为顾客提供基于移动设备的增强现实技术（AR），从而为顾客带来全新的产品视觉认知。Vuezr公司希望通过这种技术革命来改变整个移动营销模式。 从2007年至2012年，Mutricy在摩托罗拉移动控股有限公司，担任移动设备组合和设备产品管理的高级副总裁，负责领导一直全球化的团队来定义公司移动设备产品组合策略和产品结构。他提出了针对Android系统智能手机的战略重点，其中包括摩托罗拉产品上广受赞誉的DROID™系列。在摩托罗拉移动的任职期间，Mutricy还负责定义和指导移动设备业务部门的半导体和软件平台的全球战略。同时，他还领导全球研发团队负责设计和实施集成电路，无线芯片组解决方案、平台软件、非CDMA产品软件，以及移动设备的生态系统策略。 在2007年加入摩托罗拉之前，Mutricy为德州仪器公司服务了18年。并于2002年1月晋升为公司副总裁。从2004年直至他离开德州仪器公司，Mutricy一直担任该公司的蜂窝系统解决方案的副总裁兼总经理。在这个职位上，他负责将GSM / GPRS / EDGE / 3G和OMAP™应用处理器的无线芯片组解决方案商业化，并使其在行业形成领导地位。在领导蜂窝系统解决方案之前，Mutricy是德州仪器OMAP™业务的总经理，从2000年至2004年期间，他将该业务从初创的状态带领至全球领导的地位。此外，自1989年加入德州仪器以来，Mutricy曾被晋升至不同的管理职位上，每一次晋升都会在销售，市场营销和管理等领域扩大他的职责范围。 Mutricy拥有法国巴黎商高的工商管理硕士学位(MBA)，并且拥有Arts et Métiers ParisTech大学(ENSAM)的工程学硕士学位。 关于格芯 格芯是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com. 联系人： Jason Gorss 电话：（518）698-7765 [email protected]
GLOBALFOUNDRIES Adds Alain Mutricy as Head of Product Management Group March 3, 2016Santa Clara, Calif., March 3, 2016 — GLOBALFOUNDRIES, a leading provider of advanced semiconductor manufacturing technology, announced today that Alain Mutricy has joined the company as senior vice president of the Product Management Group. In this role, Mutricy is responsible for the company’s leading edge and mainstream technology solutions and go-to-market activities for these differentiated products. Mutricy succeeds Mike Cadigan, who will transition to a newly created role as senior vice president of global sales and business development. “Alain is an accomplished senior executive with more than 25 years of experience in the consumer electronics, mobile, and semiconductor industries,” said GF CEO Sanjay Jha. “He brings a strong portfolio of successes contributing to growth, profitability, and competitiveness for global product organizations, which will help him build on the strong foundation we have already established in our product management group. I am thrilled to welcome Alain to the GF team.” Before joining GF, Mutricy was founder and executive adviser at AxINNOVACTION, a consulting firm that promotes action to unlock and accelerate innovation in big organizations, as well as co-founder and CEO of Vuezr, which attempted to revolutionize mobile direct marketing by delivering product visual recognition to consumers’ mobile devices via augmented reality. From 2007-2012, Mutricy served as senior vice president of portfolio and device product management for mobile devices at Motorola Mobility Holdings, Inc., where he led a global team responsible for defining the company’s mobile devices product portfolio strategy and structure. He and his team advanced a strategic focus on Android-based smartphones, which included the widely acclaimed family of DROID™ by Motorola products. During his tenure at Motorola Mobility, Mutricy was also responsible for defining and directing the Mobile Devices business unit’s global strategy for silicon and software platforms, as well as leadership of a global R&D team responsible for designing and implementing integrated circuits, wireless chipset solutions, platform software, product software for non-CDMA products, and an ecosystem strategy for mobile devices. Prior to joining Motorola in 2007, Mutricy served at Texas Instruments for 18 years, where he was promoted to vice president in January 2002. From 2004 until his departure from Texas Instruments, Mutricy served as vice president and general manager for the company’s Cellular Systems Solutions business. In that role, he was responsible for commercializing and building a leadership position for the company’s wireless chipset solutions for GSM/GPRS/EDGE/3G and OMAP™ application processors. Prior to leading Cellular Systems Solutions, Mutricy was general manager for the Texas Instruments OMAP™ business, which he led from start-up status to global leadership between 2000 and 2004. Additionally, from the time he joined Texas Instruments in 1989, Mutricy was promoted through a series of general- management positions, each with increasing scope and responsibility in areas including sales, marketing and general management. Mutricy holds a master’s degree in engineering from ENSAM and an MBA from HEC Group—both in Paris. ABOUT GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Contacts: Jason GorssGF(518) 698-7765[email protected]
5G: The Global Race is Under Way March 1, 2016By Peter Rabbeni After wrapping up the week at Mobile World Congress in Barcelona, one thing has become clear—5G is on everyone’s mind and the race to develop enabling technologies to make 5G a reality in the next 5 years is underway. During the conference, in between meetings and demos, I was able to tour the halls and view a series of 5G technologies, innovations and use cases which not only make 5G more real but exploit the promises that 5G will bring, namely low latency, high data rates, on-the-go connectivity, high user density, and highly reliable and secure communications. Touring the tradeshow floor it felt as though the possibilities were endless for the fifth generation of mobile networks. Cellular carriers and WiFi companies were spotlighting their 5G solutions and a whole range of chipset offerings for the Internet of Things (IoT) proving that, although convergence on a common 5G specification is still some years away, we’ve reached the stage where the pipeline of 5G applications is well ahead of the standard, thus creating new business models and use cases. Many of the use cases leveraged technologies such as virtual reality, location awareness services, and push advertising addressing applications like real-time gaming to autonomous vehicles, just to name a few. And, the recent announcements from US telecoms to test 5G networks in “real-world” conditions mark the official entry into the 5G race. Many experts used the 2018 Olympics in Seoul as a proof point for 5G infrastructure deployment, with media and communications to fully exercise the network. One memorable moment of the show was during the panel keynote when Ericsson CEO Hans Vestberg pulled a multi-element steerable phased array radio front end plus antenna out of his pocket. No larger than a deck of cards, Vestberg explained that three of these would make up a three-sector 5G base station to support multi-GBps data rates in a massive MIMO environment. Today, the overall radio frequency (RF) chip market is hot. At its core, 5G and IoT will both require innovations in radio technologies, which in turn will push advances in semiconductor technologies. These innovations will include low power, integrated mmWave radio front ends, antenna phased array subsystems, high performance radio transceivers and high speed ADCs and DACs. As OEMs integrate more RF content into their smart phones and tablets and new high-speed network standards are introduced, the latest equipment requires additional RF circuitry to support newer modes of operation. This includes chips that support more LTE bands, carrier aggregation and envelope tracking. As a lower cost and more flexible alternative to GaAs, radio frequency silicon-on-insulator (RF SOI) has established itself as the technology of choice for the majority of RF switches and antenna tuners manufactured today. The mobile market continues to favor RF SOI as it helps to solve the challenges that go along with ensuring users seamless, always available connectivity and access to the power of the Internet from virtually anywhere. Interest in and usages of silicon germanium (SiGe) technologies are also growing. SiGe technologies help address both the RF front-end module and high-performance market segments by offering excellent RF gain, noise, and linearity characteristics, even at millimeter wave frequencies. SiGe enables customers to integrate more function into fewer chips while getting improved performance, and expand their addressable market segments. Longer term, it is expected that foundry capacity will increase with the strong ramp in LTE smart phones, tablet PCs, and other mobile consumer applications. Recently, GLOBALFOUNDRIES’ RF business unit crossed a new capacity threshold with our RF SOI chip shipments topping 20 billion, proving industry demand is strong. With the growth of IoT and the emerging trials for 5G, there is no doubt that demand on our networks will continue to grow. Customers who exploit RF SOI and SiGe technologies develop solutions that enhance user experiences, including broader geographic mobility and faster data rates for the increasing interconnection of everyday applications. So a global race is on, and it’s clear from the technology on display at Mobile World that RF and SiGe technologies play an even more important role in driving reduced complexity, higher performance, and lower overall cost over competing technologies.
IoT is Now! February 10, 2016The Internet of Things (IoT) is gaining a huge amount of attention – again. From considerable traction being made in low-cost sensors, cloud-based services and big data analytics to having significant prominence at CES, the IoT hype is back. Here are some one-liners, of my experience walking the floor at CES 2016: Drones – Storming the Horizon Automotive – Hot! Hot! Hot! Virtual Reality (VR) & Augmented Reality (AR) – VR more prominent than AR Robotics – Different form factors moving around 3D Printers – Getting serious 3D TVs without 3D glasses/eye-wear – Emerging and getting bigger Smart Home – Tons of gadgets showing up Wearables and Smart-garments – No cover-up here! Starting to blend with VR/AR It is important to recognize that the IoT goes beyond the “Things”. The associated market opportunity extends to the Networks to carry the data traffic, and the Data Centers to harness the data, and run analytics to transform the raw data to faster decision-making insights and outcomes. Internet of things is Beyond Things The IoT applications and use-cases that span Things, Networks, and Data Centers drive new requirements for semiconductors including ultra low power, ultra low leakage, smaller and denser packaging, and cost effectiveness. These requirements are at the heart of the IoT platform technologies developed by semiconductor Foundries that are power efficient, optimized, and cost-effective for IoT nodes. This “under-the-hood” differentiation at the semiconductor level enables the enhanced end-user and application experiences for IoT. Based on the market and customer trends, the prevalent process technologies for the Low and Mid-end IoT nodes are 55nm and 40nm. From 2017-18 onwards, we’ll see the shift to leading edge 28nm, 22nm, and 14nm and beyond, and a growth in edge-node computing. The best way to utilize changing technology is to forge the right strategic partnerships. How we partner with our customers – whether they’re supernovas coming from consolidation, or startups, which are the stars that are being born – will help define the IoT. Foundries understand they have a tremendous role to play in realizing the Internet of Things. By forging and strengthening partnerships with key customers, working to develop more efficient and effective technologies and ensuring excellence in execution – high yields and on time delivery – each and every one of us has a direct role to play in realizing the full potential of this critical opportunity. By any measure, this is the largest technology opportunity of our lifetime.
SUNY Poly and GLOBALFOUNDRIES Announce New $500M R&D Program in Albany To Accelerate Next Generation Chip Technology February 9, 2016Arrival of Second Cutting Edge EUV Lithography Tool Launches New Patterning Center That Will Generate Over 100 New High Tech Jobs at SUNY Poly ALBANY, NY – In support of Governor Andrew M. Cuomo’s commitment to maintaining New York State’s global leadership in nanotechnology research and development, SUNY Polytechnic Institute (SUNY Poly) and GLOBALFOUNDRIES today announced the establishment of a new Advanced Patterning and Productivity Center (APPC), which will be located at the Colleges of Nanoscale Science and Engineering (CNSE) in Albany, N.Y. The $500 million, 5-year program will accelerate the introduction of Extreme Ultraviolet (EUV) lithography technologies into manufacturing. The center is anchored by a network of international chipmakers and material and equipment suppliers, including IBM and Tokyo Electron, and will generate 100 jobs. “This advanced new partnership between SUNY Poly and GF demonstrates how Governor Cuomo’s strategic investments in SUNY are bolstering the system’s research capacity, leveraging private dollars, and creating exciting new opportunities at our campuses for students and faculty,” said SUNY Chancellor Nancy L. Zimpher. “SUNY Poly’s nanotechnology expertise coupled with the governor’s innovative public-private partnership model has positioned New York as a global leader in computer chip research, development, and manufacturing. SUNY System Administration strongly applauds Dr. Kaloyeros for his leadership in bringing the Advanced Patterning and Productivity Center to Albany.” “Today’s announcement is a direct result of Governor Cuomo’s innovation driven economic development model. His strategic investments supporting the state’s world class nanotechnology infrastructure and workforce have made us uniquely suited to host the new APPC, which will enable the continuation of Moore’s Law and unlock new capabilities and opportunities for the entire semiconductor industry,” said Dr. Alain Kaloyeros, President and CEO of SUNY Polytechnic Institute. “In partnership with GF, IBM and Tokyo Electron, we will leverage our combined expertise and technological capabilities to meet the critical needs of the industry and advance the introduction of this complex technology.” “GF is committed to an aggressive research roadmap that continually pushes the limits of semiconductor technology. With the recent acquisition of IBM Microelectronics, GF has gained direct access to IBM’s continued investment in world-class semiconductor research and has significantly enhanced its ability to develop leading-edge technologies,” said Dr. Gary Patton, CTO and Senior Vice President of R&D at GF. “Together with SUNY Poly, the new center will improve our capabilities and position us to advance our process geometries at 7nm and beyond.” EUV lithography is a next-generation semiconductor manufacturing technique that produces short wavelengths (14-nanometers and below) of light to create minuscule patterns on integrated circuits. The technology is critical to achieve the cost, performance, and power improvements needed to meet the industry’s anticipated demands in cloud computing, Big Data, mobile devices, and other emerging technologies. The APPC will tackle the challenges associated with commercializing EUV lithography technology. A key component of the center will be the installation of the ASML NXE:3300 EUV scanner, a state-of-the-art tool for the development and manufacturing of semiconductor process technologies at 7nm and beyond. This installation follows the installation of the IBM supported ASML NXE:3300B EUV scanner already in place at SUNY Poly. The center aims to bring mask and materials suppliers together to extend the capabilities of EUV lithography through exploring fundamental aspects of the patterning process. Other projects will be focused on enhancing productivity, in preparation for implementing EUV lithography in the manufacturing of leading-edge products in GF’s production facility in Malta, NY. Through the APPC, members will have access to SUNY Poly’s patterning infrastructure, which includes state-of-the-art film deposition and etch capability, leading-edge patterning systems, EUV mask infrastructure, and world-class EUV imaging capabilities. “IBM is committed to providing high-performance computing solutions for the cloud and cognitive era through continued leadership and collaboration in semiconductor technology research,” said Mukesh Khare, Vice President at IBM Research. “SUNY Poly CNSE’s investment in the APPC and new ASML tool will accelerate maturity of EUV technology towards manufacturing, which will allow us to build on the innovations that enabled an IBM Research-led alliance to deliver the industry’s first 7nm test chip demonstration earlier this year. Through the vision and leadership of the Governor and CSNE, leading-edge partnerships such as this one are possible.” “EUV technology has emerged from R&D and the new center will meet the rising demand to commercialize this technology and put it in the hands of end users,” said Gishi Chung, SVP & GM, Head of SPE Development Division from TEL. “TEL is proud to be partnering with SUNY Poly at its Albany NanoTech Complex as we continue our work with fellow industry leaders to advance cutting edge innovations in semiconductor process technology.” ### SUNY Polytechnic Institute. SUNY Polytechnic Institute (SUNY Poly) is New York’s globally recognized, high-tech educational ecosystem, formed from the merger of the SUNY College of Nanoscale Science and Engineering and SUNY Institute of Technology. SUNY Poly offers undergraduate and graduate degrees in the emerging disciplines of nanoscience and nanoengineering, as well as cutting-edge nanobioscience and nanoeconomics programs at its Albany location and undergraduate and graduate degrees in technology, including engineering, cybersecurity, computer science, and the engineering technologies; professional studies, including business, communication, and nursing; and arts and sciences, including natural sciences, mathematics, humanities, and social sciences at its Utica/Rome location. Thriving athletic, recreational, and cultural programs, events, and activities complement the campus experience. As the world’s most advanced, university-driven research enterprise, SUNY Poly boasts more than $43 billion in high-tech investments, over 300 corporate partners, and maintains a statewide footprint. The 1.3 million-square-foot Albany NanoTech megaplex is home to more than 4,000 scientists, researchers, engineers, students, faculty, and staff, in addition to Tech Valley High School. SUNY Poly operates the Smart Cities Technology Innovation Center (SCiTI) at Kiernan Plaza in Albany, the Solar Energy Development Center in Halfmoon, the Children’s Museum of Science and Technology (CMOST) in Troy, the Central New York Hub for Emerging Nano Industries in Syracuse, the Smart System Technology and Commercialization Center (STC) in Canandaigua, and the Photovoltaic Manufacturing and Technology Development Facility in Rochester where SUNY Poly also leads the American Institute for Manufacturing Integrated Photonics. SUNY Poly founded and manages the Computer Chip Commercialization Center (Quad-C) at its Utica location and also manages the $500 million New York Power Electronics Manufacturing Consortium, with nodes in Albany and Rochester, as well as the Buffalo High-Tech Manufacturing Innovation Hub at RiverBend, Buffalo Information Technologies Innovation and Commercialization Hub, and Buffalo Medical Innovation and Commercialization Hub. For information visit www.sunycnse.com and www.sunypoly.edu. GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com.
纽约州立大学理工学院和格芯在奥尔巴尼宣布新的500万美元研发计划，以加速下一代芯片技术 February 9, 2016 第二款尖端EUV平版印刷工具推出新型图案化中心，这将为SUNY Poly创造超过100个新的高科技工作职位。 纽约州阿尔巴尼 —为支持纽约州州长Andrew M. Cuomo承诺地维护纽约州在纳米技术研究与开发方面的全球领导力，纽约州立大学理工学院（SUNY Poly）和格芯今天宣布成立新的高级复写和创造力中心（APPC），该中心位于纽约州奥尔巴尼的纳米科学与工程学院（CNSE）。 5亿美元的5年计划将加速将极紫外（EUV）光刻技术引入制造阶段。该中心由国际芯片制造商和材料和设备供应商（包括IBM和东京电子）组成，并将创造100个工作岗位。 “纽约州立大学理工学院和格芯之间的这种先进的新型合作伙伴关系表明，州长Cuomo SUNY的战略投资正在加强系统的研究能力，高效的利用私人资金，并在校园为学生和教师创造令人兴奋的新机会，”SUNY总理Nancy L. Zimpher表示，“纽约州立大学理工学院的纳米技术的优势，以及州长创造性的公私伙伴关系模式将使纽约成为计算机芯片研发，制造领域的全球领导者。SUNY系统管理部门高度的赞扬了Kaloyeros博士在领导奥尔巴尼高级图案化和生产力中心方面的成就”。 “今天的公告是州长Cuomo创新驱动的经济发展模式的直接成果。他战略投资支持纽约州发展成国家世界级纳米技术基础设施和劳动力，这使我们非常适合主办新的APPC并继续实施摩尔定律，为整个半导体行业开辟新的能力和机会。” 纽约州立大学理工学院院长Alain Kaloyeros博士说，“与格芯，IBM和东京电子合作，我们将利用我们的综合专业知识和技术能力来满足业界的核心需求，并推动这一复杂技术的引进。” “格芯致力于一个积极的研究规划发展，不断突破半导体技术的极限。随着最近收购IBM微电子，格芯已经直接获得了IBM对世界级半导体研究的持续投资，并大大提高了其开发尖端技术的能力。”格芯首席技术官，兼研发部高级副总裁Gary Patton博士表示， “与纽约州立大学理工学院一起，新的中心将提高我们的能力，并使我们能够在7nm及以上的技术上提升我们的几何制程和工艺。” EUV光刻技术是下一代半导体制造技术。这种技术产生短波光（14纳米及以下），并且在集成电路上产生微小的图案。该技术对于实现业界在云计算，大数据，移动设备和其他新兴技术方面的成本，性能和功耗改进发展是至关重要的。 APPC将解决EUV光刻技术商业化将面临的相关挑战。该中心的关键组成部分将是安装ASML NXE：3300 EUV扫描仪，这是一种用于在7nm及以上的半导体制程技术开发和制造的最先进的工具。此安装遵循纽约州立大学理工学院已经安装的IBM支持的ASML NXE：3300B EUV扫描仪。 该中心旨在通过探索图案复写过程的基本方面，将掩膜和材料供应商集中在一起，扩大EUV光刻的能力。其他项目将侧重于提高生产力，为格芯在纽约马耳他的生产设施制造领先产品做准备。 通过APPC，成员将可以使用纽约州立大学理工学院的图案化基础设施，其中包括最先进的影像沉积和蚀刻能力，前沿图案系统，EUV掩膜基础设施以及世界一流的EUV成像能力。 “IBM致力于通过半导体技术研究领域的不断领导和合作，为云和认知时代提供高性能的计算解决方案。”IBM研究部副总裁Mukesh Khare表示，“纽约州立大学理工学院CNSE对APPC的投资和新的ASML工具将加速EUV技术向制造阶段的迈进。这将使我们能够利用IBM研发主导的联盟在今年早些时候提供业界首个7nm测试芯片演示。通过州长和CSNE的愿景和领导，这样的前沿伙伴关系是完全可能实现的。” “EUV技术来源于研发。新中心将会满足这种技术日益增长的商业化需求，最终将这种技术带到用户手中。”TEL的SPE开发部门负责人Gishi Chung表示，“TEL很荣幸能与纽约州立大学理工学院在Albany NanoTech Complex合作。我们将继续与同行业领导者合作，推动半导体工艺技术的在尖端领域的创新。” 关于纽约州立大学理工学院 纽约州立大学理工学院（SUNY Poly）是全球公认的高科技教育生态系统，由SUNY纳米科学与工程学院与SUNY理工学院合并组成。 SUNY Poly在新兴的纳米科学和纳米工程学科提供本科和研究生学位，同时在奥尔巴尼地区提供尖端纳米生物学和纳米经济学课程。该机构同时在各个方面提供本科和研究生学位，技术方向包括：工程，网络安全，计算机科学和工程技术；专业研究方向，包括商务，沟通和护理;艺术和科学方向，包括自然科学，数学，人文和社会科学。蓬勃进行的各类娱乐和文化活动，也进一步充实了学校的校园体验。作为世界最先进的大学驱动型研究型企业，纽约州立大学理工学院拥有超过430亿美元的高科技投资，超过300家企业合作伙伴，合作范围遍及全球。 Tech Valley中除了拥有130万平方英尺的奥尔巴尼纳米科技大型学院，还拥有超过4000名科学家，研究人员，工程师，学生，教职员工和员工。 纽约州立大学理工学院运营管理着多个机构，包括：位于奥尔巴尼Kiernan广场的智能城市技术创新中心（SCiTI），位于Halfmoon的太阳能发展中心，位于特洛伊的儿童科技博物馆（CMOST），位于雪城的新兴纳米工业中心 ，位于卡南代瓜市的智能系统技术和商业中心（STC），以及位于罗彻斯特的光伏制造和技术开发设施和美国制造集成光子学研究所。纽约州立大学理工学院在创立并管理位于由提卡市的计算机芯片商业化中心（QuadC），并管理了5亿美元的纽约电力电子制造联盟（New York Power Electronics Manufacturing Consortium），其中包括在奥尔巴尼和罗切斯特的节点以及在RiverBend的布法罗高科技制造创新中心，布法罗信息技术创新和商业中心，以及布法罗医疗创新和商业化中心。有关信息，请访问www.sunycnse.com and www.sunypoly.edu. 关于格芯 GF是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com.
