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Aquantia Announces Breakthrough 100G Technology for Hyperscale Data Centers and Cloud Computing Environments

Collaboration with GLOBALFOUNDRIES to extend copper interconnects to 100G bandwidth lowering the cost of high-performance data center connectivity

NEWS HIGHLIGHTS

  • Aquantia’s new QuantumStream™ technology delivers the world’s first single-lane 100Gbit/s direct attach solution by leveraging the industry’s highest performance 56Gbit/s SerDes from GF.
  • QuantumStream™ is enabled by Aquantia’s proven and patented architectural innovations in interconnect technology and delivers ultra-low latency performance critical in next-generation hyperscale architectures.
  • Aquantia and GF’s collaboration to enable up to 800Gbit/s Ethernet Direct-Attach Cable connections.
  • The collaboration includes licensing of Aquantia’s QuantumStream™ IP to GF, expanding the ecosystem of products, thus continuing the cloud computing revolution.

San Jose, Calif., October 24, 2016 – Aquantia Corp., pioneer and market leader in high-speed Ethernet connectivity solutions for data centers and enterprise infrastructure, today unveiled QuantumStream™ technology, a new class of high-performance connectivity architecture that has the potential to revolutionize next-generation hyperscale data centers. QuantumStream™ technology, which is being developed by Aquantia through a strategic collaboration with GF, is creating a 100Gbit/s bandwidth all-electrical technology to deliver low latency to networking applications. Aquantia’s technology delivers a quantum leap in bandwidth performance over a single lane of copper previously believed to be solely the realm of optical techniques. The availability of this technology will enable system vendors and data center operators to push towards higher performance and newer topologies in hyperscale architectures while keeping the reliability, low-cost and ease-of-use of electrical-based interconnects. QuantumStream™ technology is aimed at inter and intra rack connectivity up to 3 meters complementing longer reach optical connectivity solutions used in hyperscale data centers.

“As a principal engineer in global infrastructure architecture and strategy at LinkedIn, my focus is on designing next generation data centers. I have long believed that 100G connectivity would be widely deployed when it reaches a price point of one dollar per gigabit per second for optical interconnects,” said Yuval Bachar. “Aquantia has come up with a very innovative 100G technology to deliver on lower cost per gigabit utilizing copper connectivity. Lower prices will transform the economics of in rack connectivity in hyper scale data centers, which obviously is of great interest to everyone looking to achieve below one dollar per 1Gbit/s on an accelerated path within the rack.”

“As a principal engineer in global infrastructure architecture and strategy at LinkedIn, my focus is on designing next generation data centers. I have long believed that 100G connectivity would be widely deployed when it reaches a price point of one dollar per gigabit per second for optical interconnects,” said Yuval Bachar. “Aquantia has come up with a very innovative 100G technology to deliver on lower cost per gigabit utilizing copper connectivity. Lower prices will transform the economics of in rack connectivity in hyper scale data centers, which obviously is of great interest to everyone looking to achieve below one dollar per 1Gbit/s on an accelerated path within the rack.”

“To date, industry watchers have projected that only optical connectivity will serve the needs of 100Gbit/s and beyond. This presents a huge barrier since optical technologies are intrinsically higher cost,” said Faraj Aalaei, CEO of Aquantia. “Our expertise in complex high-speed copper transceivers, coupled with the legacy of robust SerDes leadership with GF’s 14nm FinFET technology will enable a continuous roadmap to the required 100G connectivity and provide our customers with the best combination to differentiate and stay ahead of evolving marketplace demands.”

Strategic Collaboration, Results in Breakthrough 100Gbit/s Interconnect Technology

GF has more than 20 years of deep technical expertise in high-speed Serializer-Deserializer (SerDes) design. A SerDes integrated circuit is a fundamental building block responsible for the transport of data between switches, servers, routers and storage equipment in data centers and IT environments, over a variety of channels such as optical fibers, electrical copper cables, and backplanes. GF’s FX-14™ Application-Specific Integrated Circuit (ASIC) platform, designed on the company’s most advanced 14nm Low Power Plus (LPP) process technology, delivers an optimized IP portfolio, including the latest generation of SerDes, which is capable of transporting data at speeds of 56Gbit/s.

Under the collaboration, GF provides access to its 56Gbit/s IP core to Aquantia’s team of experts. Aquantia combines the 56Gbit/s IP core with its patented Mixed-Mode Signal Processing (MMSP) and Multi-Core Signal Processing (MCSP) architectural innovations of high-speed interconnect over copper, which it has developed over the past decade to deliver a unique 100G interconnect high-performance SerDes solution. In addition, Aquantia will provide access to its QuantumStream™ IP to GF for incorporation into its customers’ ASICs, therefore expanding the ecosystem of solutions supporting this revolutionary interface.

The collaboration seeks to break through the perceived technical barriers in continuing the current electrical connectivity roadmap to 100Gbit/s bandwidth. In addition, Aquantia’s QuantumStream™ technology is easily leveraged to deliver multiples of 100Gbit/s of bandwidth on conventional DAC cables, resolving one of the most significant challenges facing the networking and data center industries today.

QuantumStream is Ideal for Short Distance

  • 100G over 3m Direct Attach Cable SFP
  • 400G over 3m Direct Attach Cable QSFP
  • 800G over 3m Direct Attach Cable OSFP

An analysis of the deployment of switch and server connectivity in hyperscale data centers shows that a large concentration of them are within a few meters. According to Crehan Research, the majority of direct server and storage Ethernet network connections in hyperscale data centers are currently within 3 meters. Since interconnect solutions that are optimized for hundreds of meters or even a couple of kilometers would not be adequate for a few meters, this leads to the need for complementary solutions for connectivity over short-reach applications and long-reach connections. Traditionally, electrical interconnects have delivered the lowest-cost and -power options for the short reach space whereas optical solutions have been deployed in longer reach applications thanks to low-loss of optical fibers.

Responding to a sweeping industry trend toward higher density switch and server configurations, a number of optical solutions have already been proposed for 100G. Aquantia’s QuantumStream™ technology, a complementary 100G solution for mass server and switch connectivity at shorter reaches over copper lane implementations is now possible for the first time.

“To meet the tremendous growth in bandwidth and data demands, GF is continuing its commitment to investing in network and technology enhancements including a best-in-class high-speed SerDes solution that will bring tremendous benefits to our customers,” said Mike Cadigan, senior vice president of global sales and business development at GF. “Aquantia’s innovative design expertise in high-speed copper interconnect technologies, combined with our world-class FX-14 ASIC platform and SerDes IP portfolio, will enable the continuation of electrical interconnect paradigms for hyperscale data centers.”

About Aquantia

Aquantia is a leading developer, and global supplier of high-speed semiconductor connectivity solutions. Backed by more than a decade of technology leadership and execution, Aquantia’s market leading product portfolio enables the world’s most innovative computing, data center and enterprise infrastructure applications. Aquantia addresses ever-changing market needs by providing an extensive portfolio, based on architectural innovations that deliver high performance, low power consumption, high density and high-quality silicon solutions to its customers. Aquantia is headquartered in Silicon Valley, Calif., with strong venture capital and strategic investors. For more information, visit www.aquantia.com

QuantumStream™ is a trademark of Aquantia Corp.

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

Aquantia:
Sabrina Joseph
408-726-1493
sabrina@morphoses.com

GF:
Erica McGill
518-305-5978
erica.mcgill@globalfoundries.com

Cautionary Statement

This press release contains forward-looking statements concerning Aquantia including, among other things, the extent to which its products provide technological advantages and will be accepted by the market. Forward-looking statements herein are based on current beliefs, assumptions, and expectations, speak only as of the date hereof and involve risks and uncertainties that could cause actual results to differ materially from current expectations. Factors that could cause actual results to differ materially from current expectations include, without limitation, technological and business developments in the data center and Ethernet enterprise markets for ICs.

INVECAS将在GLOBALFOUNDRIES FDX™技术上为明天的智能系统启用ASIC设计

2016年9月29日 INVECAS与GLOBALFOUNDRIES合作，在22FDX®和12FDX™技术上提供IP和端到端ASIC设计服务

           加利福尼亚州圣克拉拉市 2006年9月29日       INVECAS Inc.和格芯今天宣布，INVECAS将提供IP和端到端ASIC设计服务。此服务将作为晶圆厂的FDXcelerator™ 合作伙伴计划的一部分，该计划旨在促进22FDX SoC设计来实现未来的智能系统。该合作加速了FDX技术在物联网（IoT），移动，射频连接和网络市场的应用中的应用。

           INVECAS将与格芯的技术团队密切合作，针对公司的22FDX制程来开发和验证一系列IP。此外，INVECAS将提供全面的ASIC设计服务，帮助客户在SoC设计上拥有强烈的信心和超低的风险。

          “我们的目标是提供经硅片验证的IP解决方案和系统级专业知识，以解决当今ASIC设计师面临的难题，”INVECAS公司董事长兼首席执行官Dasaradha Gude表示。 “我们很高兴成为格芯FDXcelerator计划的初始合作伙伴，这是一项突破性的举措，旨在使广泛的客户能够加快22FDX量产时间。

          “我们很高兴扩大与INVECAS的战略关系，并欢迎他们作为FDXcelerator合作伙伴计划的初始成员，”格芯的产品管理高级副总裁Alain Mutricy说。“除了全面的FDX优化IP产品组合，我们的客户现在可以接触INVECAS全套服务，以及时和高质量地实现他们的SoC设计。“

           随着下一代12FDX™技术在最近被公布，FDXcelerator合作伙伴计划建立了格芯在业界首创的FD-SOI产品规划图，这是一个设计人员在高级节点上的的低成本的路径。通过参与FDXcelerator并继续扩展其IP产品以支持更广泛的FDX客户，INVECAS在FDX平台的采纳和增长方面处于领先地位。此外，FDXcelerator合作伙伴计划扩大了公司之间的技术合作，包括围绕质量，资格认证和研发方法的紧密联系。

          更多信息将在未来几个月与FDX设计社区共享。如果您有兴趣进一步了解FDXcelerator的客户和合作伙伴，可以访问www.globalfoundries.com/FDXcelerator。

 

关于INVECAS

           INVECAS从在美国和印度的开发中心为格芯客户提供半导体IP和硅实现服务。该公司在提供高性能和高能效IP方面拥有良好的业绩记录，并在领先的流程中始终如一地实现了多项设计的成功。欲了解更多信息，请访问https://www.invecas.com。

关于格芯

       GF是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供足够灵活和高度安全的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。

 

联系人：

Jason Gorss

电话：（518）698-7765

jason.gorss@globalfoundries.com

INVECAS to Enable ASIC Designs for Tomorrow’s Intelligent Systems on GlobalFoundries FDX™ Technology

INVECAS to Collaborate with GlobalFoundries to Provide IP and End-to-End ASIC Design Services on 22FDX® and 12FDX™ Technologies

Santa Clara, CA, September 29, 2016-INVECAS Inc. and GF announced today that INVECAS will provide IP and end-to-end ASIC design services as a part of the foundry’s FDXcelerator™ Partner Program, an ecosystem designed to facilitate 22FDX SoC designs for tomorrow’s intelligent systems. The collaboration accelerates the adoption of FDX technology in applications spanning Internet-of-Things (IoT), mobile, RF connectivity, and networking markets.

INVECAS will work closely with GF’s technology teams to develop and verify a range of intellectual property (IP) for the company’s 22FDX process. Moreover, INVECAS will offer comprehensive ASIC design services to help customers realize SoC designs with high confidence and low risk.

“Our objective is to provide silicon-proven IP solutions and system-level expertise to address the difficult issues of design complexity facing ASIC designers today,” said Dasaradha Gude, chairman and CEO, INVECAS. “We are glad to be an initial partner in GF’s FDXcelerator Program, a ground-breaking initiative to enable a broad range of customers and accelerate time-to-volume for 22FDX.”

“We are pleased to expand our strategic relationship with INVECAS and welcome them as an initial member of the FDXcelerator Partner Program,” said Alain Mutricy, senior vice president of product management at GF. “In addition to the comprehensive portfolio of FDX-optimized IP, our customers can now access INVECAS’ full suite of services to realize their SoC designs on time and with highest quality.”

With the recent announcement of the company’s next-generation 12FDX™ technology, the FDXcelerator Partner Program builds upon GF’s industry-first FD-SOI roadmap, a lower-cost migration path for designers on advanced nodes. By participating in FDXcelerator and continuing to expand its IP offering to support a wider range of FDX customers, INVECAS is well-positioned as a leader in the adoption and growth of the FDX platform. Moreover, the FDXcelerator Partner Program broadens the technology collaboration between the companies, including tighter interlock around quality, qualification and development methodology.

More information will be shared with the FDX design community in the months to come. Customers and partners interested in learning more about FDXcelerator can visit here.

ABOUT INVECAS

INVECAS offers semiconductor IP and silicon realization services for GF customers from its development centers in the US and India. The company has a strong track record in delivering high performance and power-efficient IP and has consistently achieved first-time success with multiple designs on leading-edge processes. For more information, visit https://www.invecas.com.

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.gf.com.

Contacts:
Erica McGill
GF
(518) 305-5978
erica.mcgill@globalfoundries.com

INVECAS和格芯宣布推出用于高性能计算，网络和高端移动应用的高级14nm FinFET设计IP库

2016年9月28日  来自INVECAS的硅经验证和优化的IP现在可用于格芯  14LPP工艺的代工客户

            加利福尼亚州圣克拉拉市  2016年9月28日 — 领先的IP，ASIC和嵌入式软件解决方案供应商INVECAS Inc和格在芯今天一起宣布为格芯14nm FinFET技术提供基础IP。来自INVECAS的经硅芯片验证的IP针对高性能“全时”应用（如高端智能手机，网络，服务器和图形处理器）的性能，功耗和面积要求进行了优化。该应用定制库使客户能够快速开发高性能和高能效的系统。

            INVECAS IP可以利用FinFET的优势，为更苛刻的应用提供更小的面积的更多处理能力。综合IP组合包括基础IP，如通用I / O（GPIO），存储器，标准单元库以及一整套接口和模拟IP解决方案。

            格芯的产品管理高级副总裁Alain Mutricy说：“格芯的14LPP为寻求差异化产品和加快复杂技术设计时间的客户提供了经硅芯片验证的解决方案。通过类似INVECAS这样的生态系统合作伙伴的早期参与，我们进一步增强了我们的技术，以确保拥有低风险，硅验证和高效设计策略的强大的基础设施。我们与INVECAS的战略关系为我们的客户提供了14LPP性能和功耗优化的IP平台，将其SoC设计推向了新的台阶，为广泛的应用提供了最高性能的芯片。”

            INVECAS公司董事会主席兼首席执行官Dasaradha Gude表示：“INVECAS致力于通过优化的IP和格芯的芯片实现服务来克服SoC设计挑战。”通过将经过验证的系统级专业知识与格芯的先进的14nm FinFET技术相结合，我们将能为计算，通信，移动和汽车市场提供完整的解决方案。

            INVECAS将于9月29日参与在慕尼黑的索菲特展览会。期间，INVECAS将会在格芯技术会议（GTC）上展示硅芯片验证的IP解决方案。

 

关于INVECAS

           INVECAS从其在美国和印度的开发中心为格芯客户提供半导体IP和硅实现服务。该公司在提供高性能和高能效IP方面拥有良好的业绩记录，并在领先的流程中始终如一地实现了多项设计的成功。欲了解更多信息，请访问https://www.invecas.com。

关于格芯

          GF是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。

联系人：

Jason Gorss

电话：（518）698-7765

jason.gorss@globalfoundries.com

INVECAS and GLOBALFOUNDRIES Announce Availability of Advanced 14nm FinFET Design IP Library for High-Performance Computing, Networking, and High-End Mobile Applications

Silicon-proven and optimized IP from INVECAS is now available for foundry customers on GLOBALFOUNDRIES 14LPP process

Santa Clara, Calif., September 28, 2016-INVECAS Inc., a leading IP, ASIC and embedded software solutions provider, and GF today announced the availability of foundation IP for GF’s 14nm FinFET technology. The silicon-proven IP from INVECAS is optimized for the performance, power, and area requirements of high-performance “all-the-time” applications such as high-end smartphones, networking, server, and graphics processors. This application-tailored library enables customers to rapidly develop high-performance and power-efficient systems.

INVECAS IP taps the benefits of FinFET to deliver more processing power in a smaller footprint for the most demanding applications. The comprehensive IP portfolio includes foundation IP such as general-purpose I/O (GPIO), memories, standard cell libraries, and a full set of interface and analog IP solutions.

“GF’s 14LPP offers a silicon-proven solution for customers seeking to differentiate their products and accelerate time-to-volume of designs on complex technologies,” said Alain Mutricy, senior vice president of product management at GF. “We further enhance our technology through early engagement with ecosystem partners like INVECAS, to ensure a robust infrastructure with a low-risk, silicon-proven, and efficient design strategy. Our strategic relationship with INVECAS provides our customers with the 14LPP performance and power optimized IP platforms to push their SoC designs to new levels and deliver the highest performance silicon for a broad set of applications.”

“INVECAS is dedicated to overcoming SoC design challenges with optimized IP and silicon realization services on GF’s processes,” said Dasaradha Gude, chairman and CEO of INVECAS Inc. “By combining our proven system-level expertise with GF’s advanced 14nm FinFET technology, we are uniquely positioned to provide complete solutions for the compute, communication, mobile, and automotive markets.”

INVECAS will showcase its silicon-proven IP solutions during GF Technology Conference (GTC) on September 29 at the Sofitel Munich Bayerpost in Munich, Germany.

ABOUT INVECAS

INVECAS offers semiconductor IP and silicon realization services for GF customers from its development centers in the US and India. The company has a strong track record in delivering high performance and power-efficient IP and has consistently achieved first time success with multiple designs on leading edge processes. For more information, visit https://www.invecas.com.

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

Contacts:
Erica McGill
GF
(518) 305-5978
erica.mcgill@globalfoundries.com

Snapping into Action with Snap Circuits Kits

By Fernando Guarin

Program Growth Chart

A Bit (or Byte) of History At the time that I started mentoring students with Snap Circuits at IBM in 2006, we were looking for creative activities that could convey to students what an electrical engineer does on a day-to-day basis. We started using the kits with local schools during Engineer Week visits, then expanded to the week-long camps we hosted for girls during the summer. Since 2008, I expanded my involvement in mentoring to the IEEE’s Electron Devices Society (EDS) and, with the organization’s support, have been working with a number of engineers to inspire young minds through a worldwide mentoring program called EDS-ETC (Engineers Demonstrating Science: an Engineer Teacher Connection). Formally introduced in 2010, the program was designed with the help of volunteers from the Rochester, Boise and the Mid-Hudson Valley Chapters in New York. These dedicated volunteers ran initial evaluations working with their local science teachers ranging from the fourth through twelfth grade levels. In the first phase of the project, Snap Circuits kits were made available to chapters in the United States. Shortly thereafter, the program was expanded to EDS chapters throughout the globe with participation from all IEEE regions, where local EDS chapter student members have been actively engaged. Now, the only requirement for chapters to receive kits free of charge is that they submit a plan indicating how they intend to use them. In 2015, more than 9,000 young students participated in over 130 events around the world

Engineering a Difference

The main goal of the program is to enable chapter members to visit local schools and host events designed to engage young students in the field of electrical engineering. By utilizing easy-to-use Snap Circuit Kits, students learn about electronic circuits using a “hands-on” approach to experience the exciting and creative field of electronics. We hope to encourage them to consider electrical and electronic engineering as a career. This versatile tool, along with EDS volunteers’ enthusiasm and expertise, has been used to demonstrate the many applications and motivate young students into the exciting electron devices field. In order to make a difference in the world, we need to start by working within our own communities and local schools. We need to partner with local government and industry to inspire the next generation of engineers and scientists that will work to solve the most pressing challenges we face in the world – clean water, wind/wave/hydropower, photovoltaics/solar cells, managing waste, geothermal, energy crops, energy harvesting, health care and many more. There will be plenty of work for the next generation of engineers. The technologies that advanced manufacturers develop and deliver to their customers will shape the future. We all need to contribute in order to keep the pipeline of engineers going by sharing our knowledge with the young minds that will ensure a bright future for our planet. Get involved today! Check with your employer to learn about available education outreach programs. Organize a maker faire or team up with local teachers and co-workers to get a mentoring program started. Snap Circuits kits are a great way to get students of all ages engaged. Other options include Raspberry Pi™, Arduino™ and more! Click here for additional information about the IEEE EDS-ETC program and to view a related video.

Global Reach - 67 Chapter Programs

FDX “Not a Niche” Technology

By Dave Lammers

Of all of the numbers claimed for the GLOBALFOUNDRIES fully depleted SOI technology, the one that stands out in my mind is 39. That is the number of mask layers required to create a 22nm fully depleted SOI chip, one with eight metal layers. And it compares, said Jamie Schaeffer, the FDX™ program director, with 60 masks for a comparable chip with FinFET transistors. Of course, comparisons between FinFET and FD-SOI technologies are inexact. Each have their merits. With FD-SOI, the starting SOI wafer costs several times more than a bulk wafer. There are drive current differences. But consider how many more delicate fin-creating etch steps, how many more multi-passes through expensive scanners, are represented by those extra 21 mask layers. Then it starts to become clear that FD-SOI may provide cost advantages that were not really there when the competition was between bulk planar and SOI planar technologies.

Continuity Concerns

22FDX® designs are prototyping now, with risk production in Q1 2017. The recently announced 12FDX™ technology moves to commercial production in 2019. Dan Hutcheson, CEO of VLSI Research Inc., surveyed 75 decision-makers at six chip companies, six EDA and IP vendors, and two universities, and found that one of their concerns was continuity. “One of the issues expressed in the survey was ‘Is there a future?’ They wanted to make sure there was a next node” to FD-SOI technology. Schaeffer also tagged the importance of the succession factor. “The entire FDX roadmap, integrating 22 and 12FDX, provides a complementary path to FinFETs,” he said. However, Schaeffer took slight umbrage when I asked a question that implied that the real volumes will remain in the FinFET arena, with processors and graphics chips, while FDX would be well-suited to the smaller potatoes, to the design teams that didn’t quite have the resources to tackle a FinFET project. “We are not doing this as a niche technology,” he replied. “We are targeting high-volume opportunities—transceivers, WiFi, vision processing, and automotive. We intend to fill a large volume of our Fab 1 in Dresden, and have plans in place from a capacity perspective,” Schaeffer said.

GLOBALFOUNDRIES 22FDX® is Manufactured in Europe’s Largest 300mm Factory

GLOBALFOUNDRIES 22FDX is Manufactured in Europe’s Largest 300mm Factory

That word, transceivers, is key to the FDX program. The 22FDX transistors exhibit an Fmax in the 325 GHz range, capable of meeting the nascent 5G cellular specification. Schaeffer said that the 22FDX and 12FDX technologies provide “a unique opportunity to integrate mmWave transceivers with ADCs, DACs and digital baseband. FinFETs provide the digital scaling but not the RF performance that is needed at mmWave frequencies. In the IoT market, FDX technology could support microcontroller-based SoCs with integrated low-power wireless. It also could come into play for products based on the new gigabit-class WiFi standards. And depending how quickly the 5G cellular standard is firmed up and how it fits in with the assisted-driving cars of the future, FDX may find large volumes in the automotive space.

Analog Friendly

Hutcheson said he was skeptical of SOI until he undertook the VLSI Research survey, and talked to device physicists about the relative merits of FinFETs and SOI transistors. “When we surveyed design engineers, they said that for analog, SOI is much better than FinFETs.” Dick James, senior fellow at ChipWorks (Ottawa), said that analog designers depend on an ability to adjust the width of their transistors. With FinFET-based circuits, designers deal with “a quantized transistor width,” adjusting transistor widths by using multiple fins. “With planar transistors, analog designers can tune their circuits by putting wider transistors wherever they want,” James said. The debate over power consumption also tilts in favor of SOI, James said. With the buried oxide layer (BOX), “every transistor, theoretically, can be surrounded by an insulation layer, and that helps control leakage and parasitics.” Back-biasing also plays a role in controlling power by raising the threshold voltage and reducing leakage where appropriate, he said. The debate over the relative merits of bulk FinFETs versus SOI technology has been going on for decades now, picking up intensity in the summer of 1998 when IBM formally announced that it would turn to SOI for its server processors. Intel vehemently supported its continued path on bulk silicon, ultimately leading to FinFETs, which have occupied center stage for much of the last decade. Now the FD-SOI or FinFET debate – where each fits in today’s technology spectrum — is reaching a new level of intensity, one that will play out in the marketplace.

The Right Technology for the Right Application

But why 22? Why not call it FDX20? And why 12, instead of using the 10nm delineation favored by others? This goes back to the cost-of-production issue. With 22nm design rules, Schaeffer said, single-pass patterning is sufficient. No double patterning is necessary. With 12nm, double-patterning gets the job done on critical layers, obviating the need for triple or quad patterning. There you go. With 39 mask layers, superior carrier frequencies at low power, FDX could provide an alternative to FinFETs, especially in markets where the combination of transistor density and good RF performance is valued. Let the competition begin.

格芯将提供行业领先高性能产品—7纳米FinFET技术

公司为追求终极处理能力的产品拓展了它领先的规划路线图

          加州 圣克拉拉，2016年9月15日 — 格芯今天宣布了为下一个时代的计算机应用提供具有终极性能的领先的7纳米FinFET半导体技术的计划。此技术可以为数据中心、网络、顶级移动处理器、深度机器学习应用提供更高的运算处理能力。

          对比与现今16/14nm代工厂FinFET产品，格芯的全新7纳米FinFET预期将提供两倍的逻辑密度和30%的性能增长。平台基于工业标准FinFET晶体管结构和光学刻印技术，配备在关键层次的EUV匹配能力。此方案将通过大量重复利用公司14纳米FinFET技术的制程和工具来进行加速生产。14纳米FinFET技术现于纽约州萨拉托加的8号晶圆厂以投入大批量生产。格芯计划额外投入数十亿美元在8号晶圆厂以实施7纳米FinFET生产。

          “格芯在从14纳米直接跳跃到7纳米，这一技术上的大胆的决定得到了很多领先半导体公司的支持，特别是当他们知道成本高昂的10纳米技术只能带来有限的性能和功率优势”，TIRIAS研究公司的创办人及分析部主任Jim McGregor说道。“如同28纳米与16/14纳米制程节点，7纳米技术至少在下一个10年内将成为主要节点，并将被整个半导体行业大量使用。”

          “对于加强下一代计算机体验的计算和图像产品规划来说，类似格芯7纳米FinFET这样的领先技术是关键因素，”AMD主席及总裁Lisa Su博士说道。“我们渴望与格芯继续密切合作，并期待见证格芯在近几年将14纳米技术中展现出的可靠执行与技术基础延续到7纳米技术上。”

           “IBM承诺，将推动半导体科技的极限作为积极长期研究的计划，并提上战略日程。”IBM研究中心高级副总裁 Arvind Krishna说道，“IBM研究中心持续与格芯合作开发新概念、新技巧与新科技，并一起加速我们在7纳米技术和将来的共同研究。”

           格芯将展示一个全面的且富有竞争力，并能与制程开发一同优化的IP库。为使客户加快对7纳米技术的采用，格芯拓展了它的战略合作伙伴范围，现与INVECAS建立合作关系，合作范围超越14LPP和FDX™制程，现已涵盖了7纳米制程技术的铸造IP开发。这将为客户建立符合性能、功耗、面积需求的早期设计提供了坚实的基础。

           基于在14LPP技术平台的成功，格芯的7纳米FinFET技术定位于推动下一代的计算应用，满足对超高性能的需求，其应用范围包括高端移动SoC 和云服务器处理器及网络基建。公司的高性能产品得到22FDX® 和12FDX™的增强，而这两项技术都已达到下一代智能连接设备对超低功耗的要求， 此类设备用于移动计算，5G连接，人工智能以及无人驾驶技术。

           格芯的7纳米FinFET将得到完整的基础平台和复杂的IP，包括ASIC产品。实验芯片与来自高端客户的IP已经在8号晶圆厂投入运行。本技术预计将于2017年下半年可用于客户产品设计，将于2018年早期投入风险生产。

关于格芯

           格芯是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。

格芯在22FDX®平台启动嵌入式MRAM

高性能嵌入式非易失性内存方案，是物联网汽车自动化领域新兴应用的完美选择

         加州圣克拉拉，2016年9月15日—格芯今天介绍了可进化的嵌入式磁阻性非易失性内存技术（eMRAM），基于22FDX®平台，提供比现在的NVM产品快1000倍的写入速度和高1000倍的耐用性。在维持企业领先的eMRAM存储单元大小的同时，22FDX®具备了可以在260°C（在工业级别的可操作温度）回流焊接下维持数据的能力。

          格芯的eMRAM将在22FDX®平台发布，应用了业内第一个22纳米耗尽时绝缘体上硅（FD-SOI）技术。具备多样性的eMRAM技术是为了代码储存（闪存）和工作内存（SRAM）设计，启用了超高效内存子系统，该子系统可在没有能量和性能损失的情况下多次重复启动。FDX™ 和 eMRAM的低功耗和有效的射频连接性IP，使22 FDX™成为电池供电的物联网产品与汽车自动化MCU的理想平台。

         “客户正在寻求高效非易失性内存方案，以增加自己产品的能力，”格芯CMOS平台业务部高级副总裁Gregg Barltlett说道，“22FDX™ eMRAM的出现使系统设计者具备新的能力，将更好的功能实现在他们的MCU和SoC上，还能增进性能和功耗的表现。”

          无人汽车的出现极大推动了一系列的需求，包括对芯片对内存性能的需求，这些更好的内存性能主要用于实时图像处理，高精度和连续性3D拓录数据和下一代无线更新的汽车自动化MCU。格芯的eMRAM利用独特的方法解决了此些高级驾驶辅助系统(ADAS)的要求，合并比SRAM更高密度的内存、快速写入、超高耐用性和非易失性功能，这些都只有磁阻型内存才能做到。

         “新型非易失性内存正从研究阶段走向生产，”Coughlin联合公司主席Thomas Coughlin说道，“格芯的22FDX™ eMRAM将提供SoC能力上的极大的进步，利用了嵌入式MRAM的关键性能属性。电池供电的IoT设备、汽车MCU和SoC及SSD储存控制器的设计者必然会渴望利用此多样化嵌入式NVM技术的优势。”

          格芯22FDX™ eMRAM的出现，是公司与MRAM界的先驱Everspin技术公司多年合作的成果。双方的合作已在2016年8月为世界提供了最高密度的ST-MRAM—Everspin的256兆DDR3处置磁场通道结型（pMJT）产品，此产品现已在格芯准备投入大批量生产。

          格芯的22FDX™ eMRAM现正处于开发阶段，客户试用原型机预计于2017年问世，并于2018年投入量产。格芯的eMRAM比22纳米有更好的可扩展性，预期将在FinFET和未来的FDX平台推出。

GLOBALFOUNDRIES to Deliver Industry’s Leading-Performance Offering of 7nm FinFET Technology

Company extends its leading-edge roadmap for products demanding the ultimate processing power

Santa Clara, Calif., September 15, 2016-GLOBALFOUNDRIES today announced plans to deliver a new leading-edge 7nm FinFET semiconductor technology that will offer the ultimate in performance for the next era of computing applications. This technology provides more processing power for data centers, networking, premium mobile processors, and deep learning applications.

GF’s new 7nm FinFET technology is expected to deliver more than twice the logic density and a 30 percent performance boost compared to today’s 16/14nm foundry FinFET offerings. The platform is based on an industry-standard FinFET transistor architecture and optical lithography, with EUV compatibility at key levels. This approach will accelerate the production ramp through significant re-use of tools and processes from the company’s 14nm FinFET technology, which is currently in volume production at its Fab 8 campus in Saratoga County, N.Y. GF plans to make an additional mutli-billion dollar investment in Fab 8 to enable development and production for 7nm FinFET.

“The industry is converging on 7nm FinFET as the next long-lived node, which represents a unique opportunity for GF to compete at the leading edge,” said GF CEO Sanjay Jha. “We are well positioned to deliver a differentiated 7nm FinFET technology by tapping our years of experience manufacturing high-performance chips, the talent and know-how of our former IBM Microelectronics colleagues and the world-class R&D pipeline from our research alliance. No other foundry can match this legacy of manufacturing high-performance chips.”

“GF made a bold decision to jump directly from 14nm to 7nm–a decision that is now supported by several leading semiconductor companies as they see only marginal performance and power benefits for the high cost of the 10nm process node,” said Jim McGregor, founder and principal analyst at TIRIAS Research. “Much like the 28nm and 16/14nm process nodes, 7nm appears to be the next major process node that will be widely leveraged by the entire semiconductor industry for at least the next decade.”

“Leading-edge technologies like GF 7nm FinFET are an important part of how we deliver our long-term roadmap of computing and graphics products that are capable of powering the next generation of computing experiences,” said Dr. Lisa Su, president and CEO, AMD. “We look forward to continuing our close collaboration with GF as they extend the solid execution and technology foundation they are building at 14nm to deploy high-performance, low-power 7nm technology in the coming years.”

“IBM is committed to pushing the limits of semiconductor technology as part of its aggressive long term research agenda,” said Arvind Krishna, senior vice president and director of IBM Research. “IBM Research continues to collaborate with GF in developing new ideas, new skills and new technologies that will help accelerate our joint research in 7nm technology and beyond.”

GF will deliver a comprehensive and competitive IP library, co-optimized with process development. To enable customers to accelerate adoption of 7nm FinFET technology, GF has expanded its strategic partnership with INVECAS beyond 14LPP and FDX™ processes to now include foundry IP development for 7nm process technologies. This will provide customers with a strong foundation to build early designs that meet their performance, power and area requirements.

“INVECAS specializes in providing unrivaled IP solutions, ASIC and design services to GF’s customers that span the wide-range of GF’s leading edge FinFET and FDX processes,” said Dasaradha Gude, CEO, INVECAS. “Our strategic partnership with GF combined with our tailor-made foundry IP model allows us to develop a 7nm FinFET process foundation IP that meets the challenging performance requirements of 7nm customers’ leading-edge applications.”

Building on the success of its 14LPP technology platform, GF’s 7nm FinFET technology is positioned to enable next-generation computing applications that demand ultra-high performance, from high-end mobile SoCs to processors for cloud servers and networking infrastructure. The company’s high-performance offerings are complemented by its 22FDX® and 12FDX™ technologies, which have been developed to meet the ultra-low-power requirements of the next generation of intelligent connected devices, from mobile computing and 5G connectivity to artificial intelligence and autonomous vehicles.

GF’s 7nm FinFET technology will be supported by a full platform of foundation and complex intellectual property (IP), including an application-specific integrated circuit (ASIC) offering. Test chips with IP from lead customers have already started running in Fab 8. The technology is expected to be ready for customer product design starts in the second half of 2017, with ramp to risk production in early 2018.

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

Contacts:
Jason Gorss
GF
(518) 698-7765
jason.gorss@globalfoundries.com