eMemory’s Reprogrammable NeoMTP Qualified on GLOBALFOUNDRIES’ 130nm BCDLite® and BCD Technology Platforms for Automotive Applications December 17, 2018eMemory today announced that its NeoMTP, Multiple-Times-Programmable embedded non-volatile memory (NVM) IP, has been qualified on GLOBALFOUNDRIES (GF) 130nm BCDLite® and BCD process technology platforms targeting both consumer power management and automotive AEC-Q100 Grade-1 compliant applications.
Heterogenous Strategy Gaining Steam December 11, 2018By: Dave Lammers Faced with a slowing down of traditional markets and Moore’s Law scaling, the semiconductor industry is working hard to reinvent itself, to figure out the needs of new markets such as artificial intelligence, autonomous vehicles, the Internet of Things, and others. Perhaps the most intriguing of these is artificial intelligence, with compute paradigms that can differ markedly from traditional processor-memory approaches. “For a long time, pattern recognition and cognitive tasks such as recognizing and interpreting images, understanding spoken language, and automatic translation were weak points for computers,” said Damien Querlioz, a French researcher who spoke on “Emerging Device Technologies for Neuromorphic Computing” at the recent International Electron Devices Meeting in San Francisco. Since about 2012, progress has been accelerating in AI, both during the training and inference stages, but power consumption is still a huge challenge when traditional compute architectures are used. Querlioz, a researcher based at the French national laboratory CNRS, gave a telling example: the famous game of Go played in 2016 between Google’s AlphaGo and Lee Sedol, a world champion at the game. Sedol’s brain consumed about 20 Watts during their contest, while AlphaGo required an estimated >250,000 Watts to keep its CPUs and GPUs humming. While power improvements have been made since then at Google and elsewhere, the effort to come up with new, less power-hungry devices for neuromorphic computing is intensifying. Ted Letavic, senior fellow for strategic marketing at GlobalFoundries, said he thinks about AI in stages, a timeline moving from ways to improve conventional compute technologies to radically new devices and architectures that consume much less power. All along the timeline advanced packaging will play a key role. “AI is upon us now, and we can use existing technology and add derivatives, using DTCO (design technology co-optimization) to optimize down to the bit cell design level,” Letavic said. GF technologists are developing ways to reduce power and boost performance for the 14/12 nm FinFET platform, including dual work function SRAMs, faster and lower power multiply accumulate (MAC) elements, higher bandwidth access to SRAM, and others. The FD-SOI-based FDX processes also consume much less power, especially when back-biasing techniques are deployed. With these technologies in the designer’s toolkit, Letavic said customers can “redesign the elements inherent to AI with a much lower power envelope than if they went right to 7 nm.” In parallel to these DTCO improvements are the research and development efforts underway throughout the world for embedded memory and in-memory compute solutions based on phase-change memory (PCM), resistive RAM (ReRAM), and spin-torque-transfer magnetic RAM (STT-MRAM), and FeFET. A PCM-based chip, developed at the IBM Almaden Research Center headed up by Jeff Welser, has demonstrated great progress, Querlioz said at the IEDM tutorial session, and STT-MRAM- and ReRAM-based AI processors also show great promise. “We now have a huge potential to re-invent electronics for cognitive-type tasks and pattern recognition,” Querlioz said. Letavic said the long-range need to reduce power consumption, especially for inference processing, is driving a host of startups to develop new AI solutions, and GF is working closely with several of them, as well as with long-time partners AMD and IBM. “We can only get so far with DTCO improvements to von Neumann computing. The next step beyond disaggregated logic and memory is to move to compute-in-memory and analog-based computing,” Letavic said. Moreover, the instruction set architectures (ISAs) that have served the industry well for 35 years will need to be supplanted with new software stacks and algorithms. “When we go to domain specific compute, someone has to reinvent the software. IBM has some really good insights about the software stack,” he said. “Everyone has to take this turn toward AI together. Foundries will go hand-in-hand with lead customers, and we can’t separate algorithms from the technology,” said Letavic, referring to this close cooperation at STCO, or system technology co-optimization. “STCO is a natural extension of DTCO as we move into the fourth era of computing. As we move to domain-specific compute that is a shift we will all take together.” Packaging to Help Reduce Costs While silicon advances – including dual work function metals in the gate stack, FD-SOI, and STT-MRAM – will improve performance, Letavic said packaging will play an equally large role, as companies move to link heterogenous devices made with the optimum process for each function. “I think after 20 years of discussion, 2.5D and 3D are going to be mainstream. We will see as much differentiation, if not more, from the packaging as you will from the silicon flows.” Source: GF Kevin Krewell, principal analyst at Tirias Research, said work being done with Advanced Micro Devices will give GF an advantage as companies put two or more chiplets in a single package. Earlier, AMD and Intel combined an AMD Radeon graphics processor with an Intel CPU in a single package. Now, AMD is boosting its Epyc server CPU line by using AMD’s Infinity Fabric interconnect technology. The forthcoming “Rome” server processor will feature multiple CPU and cache memory chip cores, linking those 7nm parts to a 14nm chiplet fabbed by GF that provides the I/O links to DRAM and the PCI bus. By dividing tasks and using the optimum process for each function, chiplets connected over high-speed links will change how processors for several markets are created, Krewell said, noting that Nvidia, Intel and others are supporting high-speed chip-to-chip links. “Using a mix of process nodes in a chiplet design, I do expect to see more of that. The I/O especially doesn’t scale well to 7 nm, and those functions take up a lot of space, even in 7nm. Sometimes it makes sense to put the I/O functions in an older chip. Historically, PC chip sets were made in an N minus 1 process, as part of a fab utilization strategy. Putting those functions in the right process node that can handle the I/O, where it is not as expensive per transistor, makes a lot of sense,” Krewell said. Letavic said systems companies are demanding heterogenous integration using various forms of advanced packaging ranging from interposers, vertical through-silicon vias (TSVs), special laminates, fan-outs, and others. The strategy will also provide a boon to photonic connections, as opto-electronics can provide higher bit rates than some electrical connections can support. Bob O’Donnell, principal analyst at market research firm TECHnalysis, said the chiplet strategy still has a ways to go before industry-wide standards are nailed down. Until then, companies such as AMD and others will use their own internal technologies to link multiple chiplets into SoCs. “At a certain point, complexity becomes overwhelming and then companies start to look to simplify again. The problem is coming up with a fertile ecosystem among multiple vendors, allow packaging companies to package different parts from multiple companies. Those standards haven’t been nailed down yet.” O’Donnell said the effort to use the optimum technology for each function is largely motivated by the high-cost of designing and fabbing large SoCs in a 7nm process, for example. “The basic concept with chiplets, ironically, is that we are taking apart things that had been integrated in the past. The industry was able to integrate systems into fewer components, all the way down to SoCs that had almost everything in a single chip. But now, there is a slowdown because it is just so much harder from a technical perspective. The design costs at 7nm are extremely high, and the challenges from a manufacturing perspective are just crazy.” Letavic said advanced packaging will provide benefits “at the chip level and at the system level. We are seeing it in the data center already. It is here to stay, and it will just get bigger.” About Author Dave Lammers Dave Lammers is a contributing writer for Solid State Technology and a contributing blogger for GF’s Foundry Files. Dave started writing about the semiconductor industry while working at the Associated Press Tokyo bureau in the early 1980s, a time of rapid growth for the industry. He joined E.E. Times in 1985, covering Japan, Korea, and Taiwan for the next 14 years while based in Tokyo. In 1998 Dave, his wife Mieko, and their four children moved to Austin to set up a Texas bureau for E.E. Times. A graduate of the University of Notre Dame, Dave received a master’s in journalism at the University of Missouri School of Journalism.
异构战略日渐盛行 December 11, 2018 作者: Dave Lammers 随着传统市场走向下坡路和摩尔定律的逐渐失效,半导体行业正在不断革新,力求了解人工智能、自动驾驶汽车、物联网等新市场的需求。 而其中最奇特的也许当属人工智能,因为它的计算范式与传统的“处理器-内存”方法有着明显差异。在近期于旧金山举办的国际电子器件大会上,法国研究员Damien Querlioz在谈及“神经形态计算的新型器件技术”时说道,“长期以来,模式识别和认知任务都是计算机的弱点,比如识别和解读图像、理解口语、自动翻译等。” 大约从2012年起,训练和推理阶段的人工智能技术开始加速发展,但当使用传统计算架构时,功耗仍是一个巨大挑战。Querlioz是法国国家实验室CNRS的一名研究员,他举了一个活生生的例子:2016年Google的AlphaGo与围棋世界冠军李世石之间的著名围棋大战。李世石的大脑在比赛中消耗了大约20瓦,而AlphaGo估计需要超过250,000瓦才能使其CPU和GPU保持运转。 虽然从那以后Google和其他公司均在功耗方面做出了改进,但越来越多的工作开始侧重于为神经形态计算技术设计耗电更少的新器件。 Ted Letavic是格芯的高级战略营销人员,他表示,回想人工智能的各个阶段,从改进传统计算技术,到设计耗电更少的全新器件和架构,在整个过程中,先进高效的封装将发挥关键作用。 Letavic称:“人工智能时代正在逐步到来,我们可以利用现有的技术,再加上衍生技术,通过DTCO(设计技术协同优化)进行全面优化,一直深入到位单元设计层面。”格芯的技术人员正在努力降低14/12 nm FinFET平台的功耗并提升其性能,所采用的办法包括双功函数SRAM、更快且功耗更低的累加运算(MAC)元件、对SRAM的更高带宽访问等。基于FD-SOI的FDX处理器的功耗也将降低,尤其是在部署背栅偏置技术时。Letavic表示,设计师掌握了这些技术后,客户便可以“重新设计功耗包络更低的人工智能固有元件,甚至达到7 nm”。 除了这些DTCO改进以外,全球各地也在开展其他研发工作,希望实现基于相变存储器(PCM)、阻性RAM (ReRAM)、自选扭矩转换磁性RAM (STT-MRAM)和FeFET的嵌入式内存与内存中计算解决方案。Querlioz在IEDM专题会议上提到,在IBM Almaden研究中心,由Jeff Welser领导开发的基于PCM的芯片已取得显著进展,而基于STT-MRAM和ReRAM的人工智能处理器也前景光明。Querlioz表示:“现在,我们极有可能成功为认知类型的任务和模式识别重新发明电子器件。” Letavic称,降低功耗的道路还很长,对于推理处理而言尤其如此,而这正促使众多初创公司开发新的人工智能解决方案,格芯也与其中部分公司及长期合作伙伴AMD和IBM保持着密切合作关系。 Letavic认为:“凭借对冯诺依曼计算模式的DTCO改进,我们只能发展到这一步。除了分类逻辑和内存,下一步是发展内存中计算和基于模拟的计算。”此外,为计算行业服务了35年的指令集架构(ISA)将需要被新的软件堆栈和算法取代。他说道:“对于特定领域的计算,必须重新发明软件。IBM对软件堆栈有着深刻的见解。” “各方都必须一同转向人工智能。格芯将与主要客户紧密合作,我们不能将算法与技术分开,”Letavic在谈及该系统技术协同优化(STCO)方面的紧密合作时说道,“随着我们迈入计算发展的第四个时代,STCO将是DTCO的自然延伸。我们将朝着特定领域的计算发展,共同迎接这一转变。” 封装帮助降低成本 虽然芯片的发展——包括栅极堆叠、FD-SOI和STT-MRAM中的双功函数金属——将提高性能,但Letavic指出,随着公司转而使用针对各功能优化工艺制造的链路异构器件,封装将扮演同样重要的角色。“我认为,20年后,2.5D和3D将成为主流。封装技术将跟芯片一样,呈现出更多差异化。” 资料来源:格芯 Kevin Krewell是Tirias Research的首席分析师,他表示,当公司将两个或多个小芯片放到单个封装中时,使用Advanced Micro Devices完成的工作将为格芯带来优势。早些时候,AMD和Intel将AMD Radeon图形处理器与Intel CPU结合在单个封装中。现在,AMD正利用Infinity Fabric互连技术增强Epyc服务器CPU系列。即将推出的“Rome”服务器处理器将采用多个CPU和缓存内存芯片内核,将那些7nm部件连接到格芯制造的14nm小芯片,为DRAM和PCI总线提供I/O链路。 Krewell表示,通过划分任务并使用针对各功能的优化工艺,基于高速链路连接的小芯片将改变多个市场的处理器制造方式,他还提到Nvidia、Intel等其他公司均支持高速芯片到芯片链路。 Krewell称:“通过在小芯片设计中混合使用多个工艺节点,我的确看到了更多问题。尤其是I/O不能很好地扩展到7 nm,而且即使在7nm中,那些功能也会占用大量空间。有时,将I/O功能放在旧芯片中是合理之举。以前,作为提升晶圆厂利用率战略的一部分,PC芯片组是在N减1工艺中制造的。将功能放在可处理I/O的正确工艺节点中非常有意义,每个晶体管的费用也没有那么贵。” Letavic表示,系统公司需要使用各种先进封装形式的异构集成,包括插入器、垂直硅过孔(TSV)、特殊层压板、扇出等。这一战略也将为光子连接带来好处,因为光电子器件提供的比特率可能比一些电气连接支持的比特率更高。 Bob O’Donnell是市场调查公司TECHnalysis的首席分析师,他表示,在全行业标准敲定之前,小芯片战略仍有很长的路要走。在此之前,AMD等公司将利用他们自己的内部技术将多个小芯片连接到SoC中。 “在某一时刻,复杂性变得难以应对,然后公司重新开始着手简化。问题在于要向多个供应商推出丰富的生态系统,允许封装公司对来自不同公司的不同部件进行封装。这些标准尚未敲定。” O’Donnell表示,之所以要使用针对各功能的优化工艺,是因为在7nm工艺中设计和制造大型SoC的成本非常高。 “有趣的是,小芯片的基本概念是我们将过去集成在一起的东西分开。行业能够将系统集成到更小的组件中,一直发展到SoC,能够将几乎所有元件整合到单个芯片中。但是现在,这种趋势逐渐放缓,因为从技术角度来看,难度越来越大。7nm设计的成本非常高,从制造的角度来看,这项挑战近乎疯狂。” Letavic指出,先进的封装技术将“在芯片级别和系统级别提供优势。我们已经在数据中心见证了这一点。它将不断发展下去,影响范围也将越来越大。” 关于作者 Dave Lammers是固态技术特约撰稿人,也是格芯的Foundry Files的特约博客作者。他于20世界80年代早期在美联社东京分社工作期间开始撰写关于半导体行业的文章,彼时该行业正经历快速发展。他于1985年加入E.E. Times,定居东京,在之后的14年内,足迹遍及日本、韩国和台湾。1998年,Dave与他的妻子Mieko以及4个孩子移居奥斯丁,为E.E Times开设德克萨斯办事处。Dave毕业于美国圣母大学,获得密苏里大学新闻学院新闻学硕士学位。
格芯推出业界首个300mm 硅锗晶圆工艺技术,以满足不断增长的数据中心 和高速无线应用需求 November 29, 2018 业界最先进的高速硅锗技术目前可用于TB通信和汽车雷达应用的300mm生产线 加利福尼亚州圣克拉拉,2018年11月29日 – 格芯今天宣布其先进的硅锗(SiGe)产品9HP目前可用于其300mm晶圆制造平台的原型设计。这表明300mm生产线将形成规模优势,进而促进数据中心和高速有线/无线应用的强劲增长。借助格芯的300mm专业生产技术,客户可以充分提高光纤网络、5G毫米波无线通信和汽车雷达等高速应用产品的生产效率和再现性能。 格芯是高性能硅锗解决方案的行业领导者,在佛蒙特州伯灵顿工厂用200mm生产线进行生产。将9Hp(一种90nm 硅锗工艺)迁移至纽约州东菲什基尔的格芯Fab 10工厂实现300mm晶圆生产技术,将会保持这一行业领先地位,并奠定300mm晶圆工艺基础,有助于进一步发展产品线,确保工艺性能持续增强和微缩。 “高带宽通信系统日益复杂,性能需求也随之水涨船高,这些都需要更高性能的芯片解决方案,”格芯的RF业务部副总裁 Christine Dunbar表示。“格芯的9HP旨在提供出色的性能,其300mm生产工艺将能够满足客户的高速有线和无线组件需求,助力未来的数据通信发展。” 格芯的9HP延续了成熟的高性能硅锗BiCMOS技术的优势,支持微波和毫米波频率应用高数据速率的大幅增长,适用于下一代无线网络和通信基础设施,如 TB级光纤网络、5G毫米波和卫星通信(SATCOM)以及仪器仪表和防御系统。该技术提供出色的低电流/高频率性能,改善了异质结双极晶体管(HBT)性能,与之前的硅锗 8XP和8HP相比,最大振荡频率(Fmax)提高了35%,达到370GHz。 在纽约东菲什基尔的Fab 10工厂,正在进行基于多项目晶圆(MPW)的9HP 300mm工艺客户原型设计,预计2019年第二季度将提供合格的工艺和设计套件。 如需了解更多有关格芯硅锗解决方案的信息,请联系您的格芯销售代表或访问globalfoundries.com/cn。 关于格芯 格芯是全球领先的全方位服务半导体代工厂,为世界上最富有灵感的科技公司提供独一无二的设计、开发和制造服务。伴随着全球生产基地横跨三大洲的发展步伐,格芯促生了改变行业的技术和系统的出现,并赋予了客户塑造市场的力量。格芯由阿布扎比穆巴达拉投资公司(Mubadala Investment Company)所有。欲了解更多信息,请访问 https://www.globalfoundries.com/cn。 媒体垂询: 杨颖(Jessie Yang) (021) 8029 6826 [email protected] 邢芳洁(Jay Xing) 86 18801624170 [email protected]
GLOBALFOUNDRIES Announces Industry’s First 300mm SiGe Foundry Technology to Meet Growing Data Center and High-Speed Wireless Demands November 29, 2018Industry’s most advanced high-speed SiGe technology now available on 300mm manufacturing line for terabit communications and automotive radar applications Santa Clara, Calif., November 29, 2018 – GLOBALFOUNDRIES today announced its advanced silicon germanium (SiGe) offering, 9HP, is now available for prototyping on the company’s 300mm wafer manufacturing platform. The move signifies the strong growth in data center and high-speed wired/wireless applications that can leverage the scale advantages of a 300mm manufacturing footprint. By tapping into GF’s 300mm manufacturing expertise, clients can take advantage of increased production efficiency and reproducibility for high-speed applications such as optical networks, 5G millimeter-wave wireless communications and automotive radar. GF is the industry leader in the manufacturing of high-performance SiGe solutions on its 200mm production line in Burlington, Vermont. The migration of 9HP, a 90nm SiGe process, to 300mm wafers manufactured at GF’s Fab 10 facility in East Fishkill, N.Y., continues this leadership and establishes a 300mm foothold for further roadmap development, ensuring continued technology performance enhancements and scaling. “The increasing complexity and performance demands of high-bandwidth communication systems have created the need for higher performance silicon solutions,” said Christine Dunbar, vice president of RF business unit at GF. “GF’s 9HP is specifically designed to provide outstanding performance, and in 300mm manufacturing will support our client’s requirements for high-speed wired and wireless components that will shape future data communications.” GF’s 9HP extends a rich history of high-performance SiGe BiCMOS technologies designed to support the massive growth in extremely high data rates at microwave and millimeter-wave frequencies for the next generation of wireless networks and communications infrastructure, such as terabit-level optical networks, 5G mmWave and satellite communications (SATCOM) and instrumentation and defense systems. The technology offers superior low-current/high-frequency performance with improved heterojunction bipolar transistor (HBT) performance and up to a 35 percent increase in maximum oscillation frequency (Fmax) to 370GHz compared to its predecessors, SiGe 8XP and 8HP. Client prototyping of 9HP on 300mm at Fab 10 in East Fishkill, N.Y. on multi-project wafers (MPWs) is underway now, with qualified process and design kits scheduled in 2Q 2019. For more information on GF’s SiGe solutions, contact your GLOBALFOUNDRIES sales representative or visit globalfoundries.com. About GF GLOBALFOUNDRIES (GF) is a leading full-service foundry delivering truly differentiated semiconductor technologies for a range of high-growth markets. GF provides a unique combination of design, development and fabrication services, with a range of innovative IP and feature-rich offerings including FinFET, FDX™, RF and analog mixed signal. With a manufacturing footprint spanning three continents, GF has the flexibility and agility to meet the dynamic needs of clients across the globe. GF is owned by Mubadala Investment Company. For more information, visit globalfoundries.com. Contact: Erica McGillGLOBALFOUNDRIES(518) 795-5240[email protected]
Attopsemi的I-fuseTM OTP采用格芯22nm FD-SOI工艺技术,在工作电压0.4V,功率1uW,可读取弗劳恩霍夫光子微系统研究所(IPMS)的61GHz RFID无电池标签 November 19, 2018Attopsemi的I-fuse™ OTP提供超低的读取电压/电流和超低的编程电压/电流,尺寸小巧,温度范围广泛,支持格芯22nm FD-SOI工艺,可以读取弗劳恩霍夫光子微系统研究所(IPMS)的61GHz物联网应用RFID标签。
Attopsemi的I-fuseTM OTP采用格芯的22FDX FD-SOI工艺技术,通过250℃/1000小时的晶圆级老化测试 November 19, 2018Attopsemi的I-fuse™技术具有尺寸小巧、高可靠性、低电压/电流编程、功率低和温度范围广的特性,藉由格芯22nm FDX® 的支持与合作实现汽车和物联网应用。
Attopsemi’s I-fuse OTP worked at 0.4V and 1uW read on GLOBALFOUNDRIES 22nm FD-SOI for Fraunhofer Institute for Photonic Microsystems’ (IPMS) battery-less 61GHz RFID tags November 19, 2018Attopsemi’s I-fuse™ OTP provides ultra-low read voltage/current, ultra-low program voltage/current, small size and wide temperature to enable GLOBALFOUNDRIES 22nm FD-SOI for Fraunhofer Institute for Photonic Microsystems’ (IPMS) 61GHz RFID tags in IoT applications.
Attopsemi’s I-fuse OTP Passed 250 degrees Celsius for 1,000hrs Wafer-level Burn-in Studies on GLOBALFOUNDRIES 22FDX FD-SOI Technology November 19, 2018Attopsemi’s I-fuse™ provides small size, high reliability, low program voltage/current, low power and wide temperature to enable GLOBALFOUNDRIES 22nm FDX® for automotive and IoT applications.
GLOBALFOUNDRIES, indie Semiconductor Deliver Performance-Enhanced Microcontrollers for Automotive Applications November 12, 2018 55nm LPx platform, with SST’s highly reliable embedded SuperFlash®, increases performance and energy efficiency for automotive applications Santa Clara, Calif., November 12, 2018 – GLOBALFOUNDRIES and indie Semiconductor today announced the release of a new generation of customized microcontrollers on GF’s 55nm Low Power Extended (55LPx) automotive-qualified platform, which includes embedded non-volatile memory (SuperFlash®) technology. indie Semiconductor’s new Nigel products are based on ARM Cortex-M4 microcontroller cores, capable of supporting advanced functionalities in IoT, medical and automotive markets. indie Semi is already shipping products, manufactured on GF’s 55LPx process, to automotive customers in volume. indie’s custom microcontrollers integrate in a single device mixed-signal functionality for sensing, processing, controlling and communicating. GF’s 55LPx platform, with SST’s SuperFlash® memory technology, enables the use of high-density memory and high-performance processing combined with mixed-signal functions in indie’s Nigel M4 controllers, delivering a highly integrated automotive solution at 55nm node. “indie’s Nigel controller is designed to support high performance computing for automotive system architectures,” said Paul Hollingworth, executive vice president of sales and marketing at indie Semiconductor. “As automotive system requirements get more complex, our customers need solutions to perform complex processing while combining multiple functions into a single chip to minimize size and weight. We chose GF’s automotive-qualified 55LPx platform for its combination of density, performance and cost.” “GF is pleased to be working with indie Semiconductor, a leader in state-of-the-art SoC technology,” said Rajesh Nair, vice president of mainstream offering management at GF. “indie Semiconductor joins our rapidly growing client base for GF’s 55LPx platform, which offers a combination of superior low-power logic, embedded non-volatile memory, extensive IP, and superior reliability for consumer, industrial and automotive grade 1 applications.” The 55LPx RF-enabled platform provides a fast path-to-product solution that includes silicon-qualified RF IP and Silicon Storage Technology’s (SST) highly reliable embedded SuperFlash® memory. The platform is in volume production on GF’s 300mm line in Singapore. In addition to Nigel, indie Semiconductor is currently developing several products on the technology, many of which are for automotive applications. Process design kits and an extensive offering of silicon proven IP are available now. For more information on GF’s mainstream CMOS solutions, contact your GF sales representative or go to globalfoundries.com. About indieindie designs and manufactures custom, microcontroller-based chips, using ARM cores. We replace most of the contents of a printed circuit board with a single, optimal chip. This reduces the product size, cost and power consumption compared with solutions based around standard, off-the-shelf components. Reliability, manufacturability and security from copying are all increased. www.indiesemi.com About GFGLOBALFOUNDRIES is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GLOBALFOUNDRIES makes possible the technologies and systems that transform industries and give customers the power to shape their markets. GLOBALFOUNDRIES is owned by Mubadala Investment Company. For more information, visit https://www.globalfoundries.com. SuperFlash® is a registered trademark of Silicon Storage Technology, Inc.