August 27, 2025 By Mark Cuezon Director, Wireless Infrastructure & SATCOM at GlobalFoundries Global mobile network data traffic continues to rise, driven by 5G expansion and high-demand applications like video streaming, gaming, and IoT connectivity. The latest Ericsson Mobility Report indicates mobile network data traffic rose 19% from the first quarter of 2024 to the first quarter of 2025, and with Fixed Wireless Access (FWA) traffic included, it is projected to nearly triple to 420 exabytes per month by 2030 [1]. This surge is due to more connected devices and higher average user data consumption, further fueled by better streaming quality, cloud gaming, AI apps, and Extended Reality. Expanding spectrum, especially above 6 GHz, is crucial to support this data growth and improve wireless capacity and coverage. With rising demand for high-performance wireless connectivity, efficient and scalable RF technologies are essential for keeping costs down. As networks move from 5G to 6G, infrastructure must handle higher frequencies, more bandwidth, and higher density, requiring solutions that optimize both performance and cost. Enter Gallium Nitride on Silicon (GaN-Si)—a technology that combines GaN’s high-power efficiency with silicon’s scalable manufacturing, paving the way for widespread adoption in next-generation radio access networks by lowering costs and speeding up deployment. While GaN-on-Silicon Carbide (GaN-SiC) has been favored for sub-6GHz 5G power amplifiers (PA) due to its high efficiency, outstanding thermal conductivity, and high-power density, GaN-Si is now positioned as a cost-effective, high-volume solution for RF applications. GF is driving the next wave of wireless infrastructure by positioning GaN-Si not merely as an alternative, but as a key enabler for next-generation wireless communications innovations. The RF challenge: Higher frequency, wider bandwidth, high efficiency As wireless infrastructure evolves from 5G to 6G, complexity rises. Mobile network operators (MNOs) and OEMs now face demands to support higher frequencies, broader bandwidths, and denser networks while needing to cut costs and power consumption for profitable deployment. According to an August 2024 report from Samsung, radios operating in FR1 n104 (6.425–7.125 GHz) and FR3 (7.125–24.25 GHz) bands are expected to at least double in number of antenna elements compared to today’s 5G sub-6GHz radios [2]. More antenna elements for the same radio total output power lower each antenna’s output power needs, favoring cost-effective solutions like GaN-Si over GaN-SiC. Higher frequencies allow closer antenna spacing, fitting more individual antenna elements into existing footprints but also raising the semiconductor count and BOM costs. This evolution in radio architecture enables the use of GaN-Si due to reduced power amplifier output requirements and establishes GaN-Si as a leading replacement for GaN-SiC for cost reduction. GaN-Si: Driving performance and scalability GaN-Si enables the integration of GaN epitaxy on large-diameter, high-yield 200mm silicon wafers, leveraging the same manufacturing infrastructure used in advanced CMOS technologies. This unlocks key advantages: Lower cost per RF device through economies of scale, as mentioned above Higher production throughput from established silicon fabs Potential for integrating multiple circuit blocks through heterogeneous integration or 3D stacking Although SiC substrates offer better thermal conductivity, the lower material and processing costs of GaN-Si compared to GaN-SiC make it ideal for high-volume uses like massive MIMO and small cells, supporting cost-effective RAN expansion. GaN-Si also achieves comparable RF performance in the mid to upper 5G FR1 (3.3–7.125 GHz) and 6G FR3 (7.125–24.25 GHz) bands. At GlobalFoundries, we are enabling GaN-on-Si to support a wide range of infrastructure applications: C-band (n77/n78) and n79 Massive MIMO radios 5G small cell and Open RAN platforms 6G FR3 architectures requiring broadband, high-linearity and efficiency PAs With silicon-based scalability, GaN-Si is also ideal for co-packaged RF solutions and hybrid integration—all key to next-gen wireless infrastructure platforms. Partnering for the future: GF’s GaN-Si roadmap At GlobalFoundries, we’re building the foundation for the next decade of wireless innovation. Our GaN-on-Si RF platform on 200mm wafers is designed to accelerate time-to-market for wireless infrastructure providers. We’re collaborating with ecosystem partners to drive innovation in packaging, thermal management, and RF circuit design—ensuring that GaN-Si not only meets today’s 5G demands but is also ready for the frequency, bandwidth, power, and efficiency challenges of 6G. Through GlobalShuttle, GF’s multi-project wafer (MPW) program, customers are able to efficiently and cost-effectively evaluate the potential of RF GaN-Si technology, thereby accelerating their product development cycles and reducing time to market. As wireless networks continue to evolve, wireless infrastructure providers must adopt technologies that strike a balance between performance and manufacturability. While GaN-SiC remains relevant for niche, ultra-high-power applications, GaN-Si is the path forward for scalable, high-efficiency RAN deployments. By transitioning to GaN-Si, MNOs and OEMs can unlock the benefits of GaN technology—without the economic limitations of legacy substrate materials. GlobalFoundries is proud to be at the forefront of this transition—powering the wireless future with scalable, efficient RF technologies. [1]: Ericsson Mobility Report June 2025 [2]: Samsung Research Report August 2024 Mark Cuezon is the Director of Wireless Infrastructure and SATCOM End Markets at GlobalFoundries, where he drives strategic growth and customer engagement across next-generation wireless connectivity networks and platforms.
