New Generation of Server Chips is Shaking Up the Data Center Landscape October 25, 2016 By Sanjay Charagulla Cloud computing and high-performance computing (HPC) are changing the data center industry in a big way. The biggest drivers in this space are consumerization and big data, putting our trajectory on steroids. Global cloud IP traffic will more than quadruple over the next 5 years, growing at a CAGR of 33 percent from 2014 to 2019, and accounting for more than 80 percent of total data center traffic. Also, more than 86 percent of workloads will be processed by cloud data centers. As the rapid pace of change continues, server computing and data storage requirements will continue to grow at a significant rate across the data centers, resulting in data center OEMs deploying more and more servers and storage. Source: Cisco VNI Global Cloud Index, 2016 It was only a few years ago when companies were debating if they were ready for the cloud. Today, it’s no longer a question of if – it’s about how much they can get out of the cloud services. Server processor shipments are estimated to grow by an average rate of nearly 25 percent CAGR for the next four years, reaching a total of about 25 million processors. For example, out of 11+ million servers shipped last year, x86 chipsets were used in 9.8 million of them. In the second quarter of 2016, Intel accounted for 99.7 percent of x86 server-chip shipments. The cloud is also forcing changes to long established players in the hardware and software worlds. Recently, IBM unveiled new details of its Power9 chip —the next addition to the line of microprocessors the company plans to use in its own servers—and AMD announced its new Zen technology for server chips. Here is IBM’s official Power processor roadmap from last year, and see how AMD’s Zen microarchitecture is different from its other server cores. As data server companies seek to increase power and performance while reducing costs, chipmakers are up to the challenge to find ways to increase speed and functionality to devices while keeping costs low. For example, because of its competitive power and performance, with a ~10 percent lower die size, GLOBALFOUNDRIES’ advanced 14nm FinFET technology (14LPP), supports a wide range of products from mobile devices to servers, such as AMD and IBM’s server chip products. Enabled chip x86 processor performance by 3GHz+, the GF’s 14nm FinFET technology taps the benefits of three-dimensional, fully-depleted FinFET transistors, and offers impressive gains over 28nm bulk CMOS with up to 50 percent increase in performance and a 65 percent reduction in total power. Source: GF Technology Conference 2016 The IBM and AMD announcements along with GF competitive advanced node technology, represent new competition to Intel’s dominance in the server market. In a recent strategy shift, IBM’s Power9 architecture will be offered to other hardware companies. Subsequently, IBM Power9 processors are not only targeting to HPC and enterprise server markets, but also enabling solutions for big data analytics, artificial intelligence, cognitive and hyper-cloud computing platforms. At a Silicon Valley technical conference this summer, AMD rolled out a demonstration of the performance with a head-to-head comparison of its Zen Core, claiming a 5x improvement in cache bandwidth with the redesigned memory subsystem. Overall, it is a core that contributes a 75 percent higher capacity to schedule instructions and a 50 percent greater ability to execute and issue them. With the advent of cloud computing, large service providers such as Google, Facebook, and Amazon are opting for systems based processors and open-source or in-house applications. Earlier this year, Google announced that they are working with Rackspace to co-develop an open server architecture design specification based on IBM’s new Power9 CPUs. The partnership with Nvidia should also help IBM’s Power9 become popular in servers as well as in supercomputers. Along with these two server giants, many other ARM processor-based chip vendors and other startups are building ARM server chips to target cloud datacenter markets. ARM estimates that 13 companies already are using its technology in chips for servers and other data-center hardware, which are expected to compete predominantly in single-socket and dual-socket servers with Intel server chip products. Server companies and other ARM based chip vendors are aiming at Intel’s chip dominance, targeting the~$12B server market for scale-out data centers. Overall in the next few years, these processor technologies and new solutions could begin driving a 15–25 percent growth in the server chip market.
Aquantia宣布针对超大规模数据中心与云计算环境的突破性100G技术 October 24, 20162016年10月24日 格芯合作延展铜互联技术至100G带宽，降低高性能数据中心的网络连接成本 新闻提要 · 借助格芯在行业内最高性能的56Gbit/s SerDes，Aquantia最新的QuantumStream™技术为世界展现了第一个单线100Gbit/s直连方案。 · QuantumStream™来自Aquantia专利验证的内互连接结构性创新，提供超低延迟的性能，对下一代超大规模结构尤为重要。 · Aquantia和格芯合作推出高达800Gbit/s的以太网直连线路连接。 · 合作包括将QuantumStream™的 IP授权于格芯使用，扩大产品生态系统，维持云计算的革命。 加州圣何塞，2016年10月24日— Aquantia公司，数据中心和企业基建的高速以太连接方案先锋领头羊，今天揭开了QuantumStream™ 的面纱。QuantumStream™ 是一项高性能连接结构的全新技术， 对下一代超大规模数据中心拥有革命性的潜力。QuantumStream™ 由Aquantia通过与格芯的战略性合作得到开发，发明了100Gbit/s带宽全电气化技术，为网络应用提供了超低延迟。Aquantia的技术提供了带宽和性能上的能级跳跃，使用单铜线完成了原本被认为只可通过光学传导达到的目标。本技术的公开将推动系统商和数据中心运营商向更高性能和超大规模结构的新技术靠近，同时仍维持电气基础内连接的可靠性、低成本和易用性。QuantumStream™ 目标达到服务器内部和服务器之间高达3米的连接性，很好的补充了超大规模数据中心长距离光学传播解决方案。 “作为一名LinkedIn全球基建结构和策略部的首席工程师，我专注于设计下一代的数据中心。我一直相信100G连接会被广泛利用，只要它达到每十亿字节每秒1美元的价格点，”Yuval Bachar说道。“Aquantia拥有了创新的100G技术，铜连接提供更低的数据成本。低成本将改变服务器连接的生态，对于所有追求每Gbit/s成本小于一美元却拥有更高连接速度的人来说，都具有明显吸引力。” “至今，行业观察者表示只有光学连接能满足100Gbit/s和更高的需求。但是光学技术本身的高成本就是一道巨大到障碍，”Aquantia的CEO Faraj Aalaei说道，“我们在复杂高速铜收发器上的专业经验，结合格芯稳固的SerDes领先技术及其14纳米FinFET技术，将在产品会规划上完成100G连接的目标，提供给客户对具独特性的最佳的组合，并能够领先于市场的需求。” 策略合作致使100Gbit/s内联技术突破。 格芯拥有超过20年的深度高速串联解串器（SerDes）设计专业经验。一块SerDes集成电路是交换器、服务器、路由器、数据中心的储存设备、IT环境之间数据传输的基础，同时也能控制多个渠道（例如光纤、电子铜缆线和背板）。格芯的FX-14™专用定制集成电路平台在14纳米超低功率（LPP）制程技术上设计，提供包括了以56Gbit/s速度传输数据的最新一代SerDes的优化后IP组合。 在合作下，格芯向Aquantia的专家组提供了通向56Gbit/s IP核心的渠道。Aquantia结合了56Gbit/s IP核心和其混合模式信号处理（MMSP）和多核信号处理（MCSP）专利铜内联结构创新。铜内联结构在过去的十年内得到发展，并提供独特的100G内联高性能SerDes方案。此外，Aquantia将向格芯提供通向QuantumStream™ IP的渠道，共同打造客户的ASIC，并扩大支持革命性方案的设计生态环境。 双方合作致力于打破目前的电路连接100Gbit/s带宽的固有技术障碍。另外，Aquantia的 QuantumStream™ 技术利用传统DAC缆线可轻易提供数百亿字节每秒的带宽，解决了目前面向互联网与数据中心产业最大挑战之一。 QuantumStream™是短距离的理想选择 · 100G，3米直连电缆SFP · 400G，3米直连电缆QSFP · 800G，3米直连电缆OSFP 关于超大规模数据中心的一项关于交换器和服务器连接性的分析显示，大量数据都集中在几米距离之内。据Crehan研究公司称，绝大多数直连服务器和储存以太网连接在超大规模数据中心内都处于3米以内。由于百米甚至公里外的数据连接方案无法满足近距离连接，所以需要一个既满足远距离连接又实现近距离应用连接的互补解决方案。传统上，电子内联在近距离空间提供了最低成本与最低功耗的选择，而光学方案得利于低损耗的光纤，则一般用于长距离的应用。 对于追求更高密度交换器与服务器配置的行业趋势，很多100G的光学传输方案被提出以作为应对的方案。Aquantia的 QuantumStream™技术作为大型服务器和交换器短距离传输的100G互补型解决方案，首次在铜导线应用上成为现实。 “为满足数据和带宽需求的大量增长，格芯延续对网络和技术改进的投入，带来了同类级别最佳的高速SerDes方案，为客户带来巨大的利益”，格芯全球销售与业务发展部高级副总裁Mike Cadigan说道。“Aquantia铜内联技术上的创新设计和专业经验，结合我们世界级的FX-14 ASIC平台和SerDes IP组合，将维持电气连接在超大规模数据中心标志性地位。” 关于Aquantia Aquantia是高速半导体连接方案的领先开发者和全球供应商。得益于长达10年以上的技术领先和执行，Aquantia的市场领先产品组合打造了世界上最新的计算、数据中心和企业基建应用。Aquantia基于提供高性能、低功耗、高密度和高品质硅方案的结构创新，提供了拓展的产品组合，并能够满足不断变化的市场需求。Aquantia总部坐落于加州硅谷，汇集富有冒险精神的领导和精通策略的投资者。 了解更多详情，请登录www.aquantia.com QuantumStream™ 为Aquantia Corp注册商标。 关于格芯 格芯是提供全方位服务的领先半导体晶圆制造商，为世界上最具创新意识的科技公司提供独特的设计，开发和制造服务。格芯的生产制造业务遍布全球三大洲。格芯使技术和系统转型成为可能，并且帮助客户拥有塑造市场的力量。 格芯是Mubadala Development Company旗下公司。欲了解更多信息，请访问公司官方网站 https://www.globalfoundries.com。
Aquantia Announces Breakthrough 100G Technology for Hyperscale Data Centers and Cloud Computing Environments October 24, 2016Collaboration with GLOBALFOUNDRIES to extend copper interconnects to 100G bandwidth lowering the cost of high-performance data center connectivity NEWS HIGHLIGHTS Aquantia’s new QuantumStream™ technology delivers the world’s first single-lane 100Gbit/s direct attach solution by leveraging the industry’s highest performance 56Gbit/s SerDes from GF. QuantumStream™ is enabled by Aquantia’s proven and patented architectural innovations in interconnect technology and delivers ultra-low latency performance critical in next-generation hyperscale architectures. Aquantia and GF’s collaboration to enable up to 800Gbit/s Ethernet Direct-Attach Cable connections. The collaboration includes licensing of Aquantia’s QuantumStream™ IP to GF, expanding the ecosystem of products, thus continuing the cloud computing revolution. San Jose, Calif., October 24, 2016 – Aquantia Corp., pioneer and market leader in high-speed Ethernet connectivity solutions for data centers and enterprise infrastructure, today unveiled QuantumStream™ technology, a new class of high-performance connectivity architecture that has the potential to revolutionize next-generation hyperscale data centers. QuantumStream™ technology, which is being developed by Aquantia through a strategic collaboration with GF, is creating a 100Gbit/s bandwidth all-electrical technology to deliver low latency to networking applications. Aquantia’s technology delivers a quantum leap in bandwidth performance over a single lane of copper previously believed to be solely the realm of optical techniques. The availability of this technology will enable system vendors and data center operators to push towards higher performance and newer topologies in hyperscale architectures while keeping the reliability, low-cost and ease-of-use of electrical-based interconnects. QuantumStream™ technology is aimed at inter and intra rack connectivity up to 3 meters complementing longer reach optical connectivity solutions used in hyperscale data centers. “As a principal engineer in global infrastructure architecture and strategy at LinkedIn, my focus is on designing next generation data centers. I have long believed that 100G connectivity would be widely deployed when it reaches a price point of one dollar per gigabit per second for optical interconnects,” said Yuval Bachar. “Aquantia has come up with a very innovative 100G technology to deliver on lower cost per gigabit utilizing copper connectivity. Lower prices will transform the economics of in rack connectivity in hyper scale data centers, which obviously is of great interest to everyone looking to achieve below one dollar per 1Gbit/s on an accelerated path within the rack.” “As a principal engineer in global infrastructure architecture and strategy at LinkedIn, my focus is on designing next generation data centers. I have long believed that 100G connectivity would be widely deployed when it reaches a price point of one dollar per gigabit per second for optical interconnects,” said Yuval Bachar. “Aquantia has come up with a very innovative 100G technology to deliver on lower cost per gigabit utilizing copper connectivity. Lower prices will transform the economics of in rack connectivity in hyper scale data centers, which obviously is of great interest to everyone looking to achieve below one dollar per 1Gbit/s on an accelerated path within the rack.” “To date, industry watchers have projected that only optical connectivity will serve the needs of 100Gbit/s and beyond. This presents a huge barrier since optical technologies are intrinsically higher cost,” said Faraj Aalaei, CEO of Aquantia. “Our expertise in complex high-speed copper transceivers, coupled with the legacy of robust SerDes leadership with GF’s 14nm FinFET technology will enable a continuous roadmap to the required 100G connectivity and provide our customers with the best combination to differentiate and stay ahead of evolving marketplace demands.” Strategic Collaboration, Results in Breakthrough 100Gbit/s Interconnect Technology GF has more than 20 years of deep technical expertise in high-speed Serializer-Deserializer (SerDes) design. A SerDes integrated circuit is a fundamental building block responsible for the transport of data between switches, servers, routers and storage equipment in data centers and IT environments, over a variety of channels such as optical fibers, electrical copper cables, and backplanes. GF’s FX-14™ Application-Specific Integrated Circuit (ASIC) platform, designed on the company’s most advanced 14nm Low Power Plus (LPP) process technology, delivers an optimized IP portfolio, including the latest generation of SerDes, which is capable of transporting data at speeds of 56Gbit/s. Under the collaboration, GF provides access to its 56Gbit/s IP core to Aquantia’s team of experts. Aquantia combines the 56Gbit/s IP core with its patented Mixed-Mode Signal Processing (MMSP) and Multi-Core Signal Processing (MCSP) architectural innovations of high-speed interconnect over copper, which it has developed over the past decade to deliver a unique 100G interconnect high-performance SerDes solution. In addition, Aquantia will provide access to its QuantumStream™ IP to GF for incorporation into its customers’ ASICs, therefore expanding the ecosystem of solutions supporting this revolutionary interface. The collaboration seeks to break through the perceived technical barriers in continuing the current electrical connectivity roadmap to 100Gbit/s bandwidth. In addition, Aquantia’s QuantumStream™ technology is easily leveraged to deliver multiples of 100Gbit/s of bandwidth on conventional DAC cables, resolving one of the most significant challenges facing the networking and data center industries today. QuantumStream is Ideal for Short Distance 100G over 3m Direct Attach Cable SFP 400G over 3m Direct Attach Cable QSFP 800G over 3m Direct Attach Cable OSFP An analysis of the deployment of switch and server connectivity in hyperscale data centers shows that a large concentration of them are within a few meters. According to Crehan Research, the majority of direct server and storage Ethernet network connections in hyperscale data centers are currently within 3 meters. Since interconnect solutions that are optimized for hundreds of meters or even a couple of kilometers would not be adequate for a few meters, this leads to the need for complementary solutions for connectivity over short-reach applications and long-reach connections. Traditionally, electrical interconnects have delivered the lowest-cost and -power options for the short reach space whereas optical solutions have been deployed in longer reach applications thanks to low-loss of optical fibers. Responding to a sweeping industry trend toward higher density switch and server configurations, a number of optical solutions have already been proposed for 100G. Aquantia’s QuantumStream™ technology, a complementary 100G solution for mass server and switch connectivity at shorter reaches over copper lane implementations is now possible for the first time. “To meet the tremendous growth in bandwidth and data demands, GF is continuing its commitment to investing in network and technology enhancements including a best-in-class high-speed SerDes solution that will bring tremendous benefits to our customers,” said Mike Cadigan, senior vice president of global sales and business development at GF. “Aquantia’s innovative design expertise in high-speed copper interconnect technologies, combined with our world-class FX-14 ASIC platform and SerDes IP portfolio, will enable the continuation of electrical interconnect paradigms for hyperscale data centers.” About Aquantia Aquantia is a leading developer, and global supplier of high-speed semiconductor connectivity solutions. Backed by more than a decade of technology leadership and execution, Aquantia’s market leading product portfolio enables the world’s most innovative computing, data center and enterprise infrastructure applications. Aquantia addresses ever-changing market needs by providing an extensive portfolio, based on architectural innovations that deliver high performance, low power consumption, high density and high-quality silicon solutions to its customers. Aquantia is headquartered in Silicon Valley, Calif., with strong venture capital and strategic investors. For more information, visit www.aquantia.com QuantumStream™ is a trademark of Aquantia Corp. About GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Aquantia:Sabrina Joseph408-726-1493[email protected] GF:Erica McGill518-305-5978[email protected] Cautionary Statement This press release contains forward-looking statements concerning Aquantia including, among other things, the extent to which its products provide technological advantages and will be accepted by the market. Forward-looking statements herein are based on current beliefs, assumptions, and expectations, speak only as of the date hereof and involve risks and uncertainties that could cause actual results to differ materially from current expectations. Factors that could cause actual results to differ materially from current expectations include, without limitation, technological and business developments in the data center and Ethernet enterprise markets for ICs.
INVECAS将在GLOBALFOUNDRIES FDX™技术上为明天的智能系统启用ASIC设计 September 29, 20162016年9月29日 INVECAS与GLOBALFOUNDRIES合作，在22FDX®和12FDX™技术上提供IP和端到端ASIC设计服务 加利福尼亚州圣克拉拉市 2006年9月29日 INVECAS Inc.和格芯今天宣布，INVECAS将提供IP和端到端ASIC设计服务。此服务将作为晶圆厂的FDXcelerator™ 合作伙伴计划的一部分，该计划旨在促进22FDX SoC设计来实现未来的智能系统。该合作加速了FDX技术在物联网（IoT），移动，射频连接和网络市场的应用中的应用。 INVECAS将与格芯的技术团队密切合作，针对公司的22FDX制程来开发和验证一系列IP。此外，INVECAS将提供全面的ASIC设计服务，帮助客户在SoC设计上拥有强烈的信心和超低的风险。 “我们的目标是提供经硅片验证的IP解决方案和系统级专业知识，以解决当今ASIC设计师面临的难题，”INVECAS公司董事长兼首席执行官Dasaradha Gude表示。 “我们很高兴成为格芯FDXcelerator计划的初始合作伙伴，这是一项突破性的举措，旨在使广泛的客户能够加快22FDX量产时间。 “我们很高兴扩大与INVECAS的战略关系，并欢迎他们作为FDXcelerator合作伙伴计划的初始成员，”格芯的产品管理高级副总裁Alain Mutricy说。“除了全面的FDX优化IP产品组合，我们的客户现在可以接触INVECAS全套服务，以及时和高质量地实现他们的SoC设计。“ 随着下一代12FDX™技术在最近被公布，FDXcelerator合作伙伴计划建立了格芯在业界首创的FD-SOI产品规划图，这是一个设计人员在高级节点上的的低成本的路径。通过参与FDXcelerator并继续扩展其IP产品以支持更广泛的FDX客户，INVECAS在FDX平台的采纳和增长方面处于领先地位。此外，FDXcelerator合作伙伴计划扩大了公司之间的技术合作，包括围绕质量，资格认证和研发方法的紧密联系。 更多信息将在未来几个月与FDX设计社区共享。如果您有兴趣进一步了解FDXcelerator的客户和合作伙伴，可以访问www.globalfoundries.com/FDXcelerator。 关于INVECAS INVECAS从在美国和印度的开发中心为格芯客户提供半导体IP和硅实现服务。该公司在提供高性能和高能效IP方面拥有良好的业绩记录，并在领先的流程中始终如一地实现了多项设计的成功。欲了解更多信息，请访问https://www.invecas.com。 关于格芯 GF是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供足够灵活和高度安全的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。 联系人： Jason Gorss 电话：（518）698-7765 [email protected]
INVECAS to Enable ASIC Designs for Tomorrow’s Intelligent Systems on GlobalFoundries FDX™ Technology September 29, 2016 INVECAS to Collaborate with GlobalFoundries to Provide IP and End-to-End ASIC Design Services on 22FDX® and 12FDX™ Technologies Santa Clara, CA, September 29, 2016-INVECAS Inc. and GF announced today that INVECAS will provide IP and end-to-end ASIC design services as a part of the foundry’s FDXcelerator™ Partner Program, an ecosystem designed to facilitate 22FDX SoC designs for tomorrow’s intelligent systems. The collaboration accelerates the adoption of FDX technology in applications spanning Internet-of-Things (IoT), mobile, RF connectivity, and networking markets. INVECAS will work closely with GF’s technology teams to develop and verify a range of intellectual property (IP) for the company’s 22FDX process. Moreover, INVECAS will offer comprehensive ASIC design services to help customers realize SoC designs with high confidence and low risk. “Our objective is to provide silicon-proven IP solutions and system-level expertise to address the difficult issues of design complexity facing ASIC designers today,” said Dasaradha Gude, chairman and CEO, INVECAS. “We are glad to be an initial partner in GF’s FDXcelerator Program, a ground-breaking initiative to enable a broad range of customers and accelerate time-to-volume for 22FDX.” “We are pleased to expand our strategic relationship with INVECAS and welcome them as an initial member of the FDXcelerator Partner Program,” said Alain Mutricy, senior vice president of product management at GF. “In addition to the comprehensive portfolio of FDX-optimized IP, our customers can now access INVECAS’ full suite of services to realize their SoC designs on time and with highest quality.” With the recent announcement of the company’s next-generation 12FDX™ technology, the FDXcelerator Partner Program builds upon GF’s industry-first FD-SOI roadmap, a lower-cost migration path for designers on advanced nodes. By participating in FDXcelerator and continuing to expand its IP offering to support a wider range of FDX customers, INVECAS is well-positioned as a leader in the adoption and growth of the FDX platform. Moreover, the FDXcelerator Partner Program broadens the technology collaboration between the companies, including tighter interlock around quality, qualification and development methodology. More information will be shared with the FDX design community in the months to come. Customers and partners interested in learning more about FDXcelerator can visit here. ABOUT INVECAS INVECAS offers semiconductor IP and silicon realization services for GF customers from its development centers in the US and India. The company has a strong track record in delivering high performance and power-efficient IP and has consistently achieved first-time success with multiple designs on leading-edge processes. For more information, visit https://www.invecas.com. About GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.gf.com. Contacts:Erica McGillGF(518) 305-5978[email protected]
INVECAS和格芯宣布推出用于高性能计算，网络和高端移动应用的高级14nm FinFET设计IP库 September 28, 20162016年9月28日 来自INVECAS的硅经验证和优化的IP现在可用于格芯 14LPP工艺的代工客户 加利福尼亚州圣克拉拉市 2016年9月28日 — 领先的IP，ASIC和嵌入式软件解决方案供应商INVECAS Inc和格在芯今天一起宣布为格芯14nm FinFET技术提供基础IP。来自INVECAS的经硅芯片验证的IP针对高性能“全时”应用（如高端智能手机，网络，服务器和图形处理器）的性能，功耗和面积要求进行了优化。该应用定制库使客户能够快速开发高性能和高能效的系统。 INVECAS IP可以利用FinFET的优势，为更苛刻的应用提供更小的面积的更多处理能力。综合IP组合包括基础IP，如通用I / O（GPIO），存储器，标准单元库以及一整套接口和模拟IP解决方案。 格芯的产品管理高级副总裁Alain Mutricy说：“格芯的14LPP为寻求差异化产品和加快复杂技术设计时间的客户提供了经硅芯片验证的解决方案。通过类似INVECAS这样的生态系统合作伙伴的早期参与，我们进一步增强了我们的技术，以确保拥有低风险，硅验证和高效设计策略的强大的基础设施。我们与INVECAS的战略关系为我们的客户提供了14LPP性能和功耗优化的IP平台，将其SoC设计推向了新的台阶，为广泛的应用提供了最高性能的芯片。” INVECAS公司董事会主席兼首席执行官Dasaradha Gude表示：“INVECAS致力于通过优化的IP和格芯的芯片实现服务来克服SoC设计挑战。”通过将经过验证的系统级专业知识与格芯的先进的14nm FinFET技术相结合，我们将能为计算，通信，移动和汽车市场提供完整的解决方案。 INVECAS将于9月29日参与在慕尼黑的索菲特展览会。期间，INVECAS将会在格芯技术会议（GTC）上展示硅芯片验证的IP解决方案。 关于INVECAS INVECAS从其在美国和印度的开发中心为格芯客户提供半导体IP和硅实现服务。该公司在提供高性能和高能效IP方面拥有良好的业绩记录，并在领先的流程中始终如一地实现了多项设计的成功。欲了解更多信息，请访问https://www.invecas.com。 关于格芯 GF是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。 联系人： Jason Gorss 电话：（518）698-7765 [email protected]
INVECAS and GLOBALFOUNDRIES Announce Availability of Advanced 14nm FinFET Design IP Library for High-Performance Computing, Networking, and High-End Mobile Applications September 28, 2016Silicon-proven and optimized IP from INVECAS is now available for foundry customers on GLOBALFOUNDRIES 14LPP process Santa Clara, Calif., September 28, 2016-INVECAS Inc., a leading IP, ASIC and embedded software solutions provider, and GF today announced the availability of foundation IP for GF’s 14nm FinFET technology. The silicon-proven IP from INVECAS is optimized for the performance, power, and area requirements of high-performance “all-the-time” applications such as high-end smartphones, networking, server, and graphics processors. This application-tailored library enables customers to rapidly develop high-performance and power-efficient systems. INVECAS IP taps the benefits of FinFET to deliver more processing power in a smaller footprint for the most demanding applications. The comprehensive IP portfolio includes foundation IP such as general-purpose I/O (GPIO), memories, standard cell libraries, and a full set of interface and analog IP solutions. “GF’s 14LPP offers a silicon-proven solution for customers seeking to differentiate their products and accelerate time-to-volume of designs on complex technologies,” said Alain Mutricy, senior vice president of product management at GF. “We further enhance our technology through early engagement with ecosystem partners like INVECAS, to ensure a robust infrastructure with a low-risk, silicon-proven, and efficient design strategy. Our strategic relationship with INVECAS provides our customers with the 14LPP performance and power optimized IP platforms to push their SoC designs to new levels and deliver the highest performance silicon for a broad set of applications.” “INVECAS is dedicated to overcoming SoC design challenges with optimized IP and silicon realization services on GF’s processes,” said Dasaradha Gude, chairman and CEO of INVECAS Inc. “By combining our proven system-level expertise with GF’s advanced 14nm FinFET technology, we are uniquely positioned to provide complete solutions for the compute, communication, mobile, and automotive markets.” INVECAS will showcase its silicon-proven IP solutions during GF Technology Conference (GTC) on September 29 at the Sofitel Munich Bayerpost in Munich, Germany. ABOUT INVECAS INVECAS offers semiconductor IP and silicon realization services for GF customers from its development centers in the US and India. The company has a strong track record in delivering high performance and power-efficient IP and has consistently achieved first time success with multiple designs on leading edge processes. For more information, visit https://www.invecas.com. About GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Contacts:Erica McGillGF(518) 305-5978[email protected]
Snapping into Action with Snap Circuits Kits September 26, 2016 By Fernando Guarin A Bit (or Byte) of History At the time that I started mentoring students with Snap Circuits at IBM in 2006, we were looking for creative activities that could convey to students what an electrical engineer does on a day-to-day basis. We started using the kits with local schools during Engineer Week visits, then expanded to the week-long camps we hosted for girls during the summer. Since 2008, I expanded my involvement in mentoring to the IEEE’s Electron Devices Society (EDS) and, with the organization’s support, have been working with a number of engineers to inspire young minds through a worldwide mentoring program called EDS-ETC (Engineers Demonstrating Science: an Engineer Teacher Connection). Formally introduced in 2010, the program was designed with the help of volunteers from the Rochester, Boise and the Mid-Hudson Valley Chapters in New York. These dedicated volunteers ran initial evaluations working with their local science teachers ranging from the fourth through twelfth grade levels. In the first phase of the project, Snap Circuits kits were made available to chapters in the United States. Shortly thereafter, the program was expanded to EDS chapters throughout the globe with participation from all IEEE regions, where local EDS chapter student members have been actively engaged. Now, the only requirement for chapters to receive kits free of charge is that they submit a plan indicating how they intend to use them. In 2015, more than 9,000 young students participated in over 130 events around the world Engineering a Difference The main goal of the program is to enable chapter members to visit local schools and host events designed to engage young students in the field of electrical engineering. By utilizing easy-to-use Snap Circuit Kits, students learn about electronic circuits using a “hands-on” approach to experience the exciting and creative field of electronics. We hope to encourage them to consider electrical and electronic engineering as a career. This versatile tool, along with EDS volunteers’ enthusiasm and expertise, has been used to demonstrate the many applications and motivate young students into the exciting electron devices field. In order to make a difference in the world, we need to start by working within our own communities and local schools. We need to partner with local government and industry to inspire the next generation of engineers and scientists that will work to solve the most pressing challenges we face in the world – clean water, wind/wave/hydropower, photovoltaics/solar cells, managing waste, geothermal, energy crops, energy harvesting, health care and many more. There will be plenty of work for the next generation of engineers. The technologies that advanced manufacturers develop and deliver to their customers will shape the future. We all need to contribute in order to keep the pipeline of engineers going by sharing our knowledge with the young minds that will ensure a bright future for our planet. Get involved today! Check with your employer to learn about available education outreach programs. Organize a maker faire or team up with local teachers and co-workers to get a mentoring program started. Snap Circuits kits are a great way to get students of all ages engaged. Other options include Raspberry Pi™, Arduino™ and more! Click here for additional information about the IEEE EDS-ETC program and to view a related video.
FDX “Not a Niche” Technology September 22, 2016By Dave Lammers Of all of the numbers claimed for the GLOBALFOUNDRIES fully depleted SOI technology, the one that stands out in my mind is 39. That is the number of mask layers required to create a 22nm fully depleted SOI chip, one with eight metal layers. And it compares, said Jamie Schaeffer, the FDX™ program director, with 60 masks for a comparable chip with FinFET transistors. Of course, comparisons between FinFET and FD-SOI technologies are inexact. Each have their merits. With FD-SOI, the starting SOI wafer costs several times more than a bulk wafer. There are drive current differences. But consider how many more delicate fin-creating etch steps, how many more multi-passes through expensive scanners, are represented by those extra 21 mask layers. Then it starts to become clear that FD-SOI may provide cost advantages that were not really there when the competition was between bulk planar and SOI planar technologies. Continuity Concerns 22FDX® designs are prototyping now, with risk production in Q1 2017. The recently announced 12FDX™ technology moves to commercial production in 2019. Dan Hutcheson, CEO of VLSI Research Inc., surveyed 75 decision-makers at six chip companies, six EDA and IP vendors, and two universities, and found that one of their concerns was continuity. “One of the issues expressed in the survey was ‘Is there a future?’ They wanted to make sure there was a next node” to FD-SOI technology. Schaeffer also tagged the importance of the succession factor. “The entire FDX roadmap, integrating 22 and 12FDX, provides a complementary path to FinFETs,” he said. However, Schaeffer took slight umbrage when I asked a question that implied that the real volumes will remain in the FinFET arena, with processors and graphics chips, while FDX would be well-suited to the smaller potatoes, to the design teams that didn’t quite have the resources to tackle a FinFET project. “We are not doing this as a niche technology,” he replied. “We are targeting high-volume opportunities—transceivers, WiFi, vision processing, and automotive. We intend to fill a large volume of our Fab 1 in Dresden, and have plans in place from a capacity perspective,” Schaeffer said. GLOBALFOUNDRIES 22FDX is Manufactured in Europe’s Largest 300mm Factory That word, transceivers, is key to the FDX program. The 22FDX transistors exhibit an Fmax in the 325 GHz range, capable of meeting the nascent 5G cellular specification. Schaeffer said that the 22FDX and 12FDX technologies provide “a unique opportunity to integrate mmWave transceivers with ADCs, DACs and digital baseband. FinFETs provide the digital scaling but not the RF performance that is needed at mmWave frequencies. In the IoT market, FDX technology could support microcontroller-based SoCs with integrated low-power wireless. It also could come into play for products based on the new gigabit-class WiFi standards. And depending how quickly the 5G cellular standard is firmed up and how it fits in with the assisted-driving cars of the future, FDX may find large volumes in the automotive space. Analog Friendly Hutcheson said he was skeptical of SOI until he undertook the VLSI Research survey, and talked to device physicists about the relative merits of FinFETs and SOI transistors. “When we surveyed design engineers, they said that for analog, SOI is much better than FinFETs.” Dick James, senior fellow at ChipWorks (Ottawa), said that analog designers depend on an ability to adjust the width of their transistors. With FinFET-based circuits, designers deal with “a quantized transistor width,” adjusting transistor widths by using multiple fins. “With planar transistors, analog designers can tune their circuits by putting wider transistors wherever they want,” James said. The debate over power consumption also tilts in favor of SOI, James said. With the buried oxide layer (BOX), “every transistor, theoretically, can be surrounded by an insulation layer, and that helps control leakage and parasitics.” Back-biasing also plays a role in controlling power by raising the threshold voltage and reducing leakage where appropriate, he said. The debate over the relative merits of bulk FinFETs versus SOI technology has been going on for decades now, picking up intensity in the summer of 1998 when IBM formally announced that it would turn to SOI for its server processors. Intel vehemently supported its continued path on bulk silicon, ultimately leading to FinFETs, which have occupied center stage for much of the last decade. Now the FD-SOI or FinFET debate – where each fits in today’s technology spectrum — is reaching a new level of intensity, one that will play out in the marketplace. But why 22? Why not call it FDX20? And why 12, instead of using the 10nm delineation favored by others? This goes back to the cost-of-production issue. With 22nm design rules, Schaeffer said, single-pass patterning is sufficient. No double patterning is necessary. With 12nm, double-patterning gets the job done on critical layers, obviating the need for triple or quad patterning. There you go. With 39 mask layers, superior carrier frequencies at low power, FDX could provide an alternative to FinFETs, especially in markets where the combination of transistor density and good RF performance is valued. Let the competition begin.
格芯将提供行业领先高性能产品—7纳米FinFET技术 September 15, 2016公司为追求终极处理能力的产品拓展了它领先的规划路线图 加州 圣克拉拉，2016年9月15日 — 格芯今天宣布了为下一个时代的计算机应用提供具有终极性能的领先的7纳米FinFET半导体技术的计划。此技术可以为数据中心、网络、顶级移动处理器、深度机器学习应用提供更高的运算处理能力。 对比与现今16/14nm代工厂FinFET产品，格芯的全新7纳米FinFET预期将提供两倍的逻辑密度和30%的性能增长。平台基于工业标准FinFET晶体管结构和光学刻印技术，配备在关键层次的EUV匹配能力。此方案将通过大量重复利用公司14纳米FinFET技术的制程和工具来进行加速生产。14纳米FinFET技术现于纽约州萨拉托加的8号晶圆厂以投入大批量生产。格芯计划额外投入数十亿美元在8号晶圆厂以实施7纳米FinFET生产。 “格芯在从14纳米直接跳跃到7纳米，这一技术上的大胆的决定得到了很多领先半导体公司的支持，特别是当他们知道成本高昂的10纳米技术只能带来有限的性能和功率优势”，TIRIAS研究公司的创办人及分析部主任Jim McGregor说道。“如同28纳米与16/14纳米制程节点，7纳米技术至少在下一个10年内将成为主要节点，并将被整个半导体行业大量使用。” “对于加强下一代计算机体验的计算和图像产品规划来说，类似格芯7纳米FinFET这样的领先技术是关键因素，”AMD主席及总裁Lisa Su博士说道。“我们渴望与格芯继续密切合作，并期待见证格芯在近几年将14纳米技术中展现出的可靠执行与技术基础延续到7纳米技术上。” “IBM承诺，将推动半导体科技的极限作为积极长期研究的计划，并提上战略日程。”IBM研究中心高级副总裁 Arvind Krishna说道，“IBM研究中心持续与格芯合作开发新概念、新技巧与新科技，并一起加速我们在7纳米技术和将来的共同研究。” 格芯将展示一个全面的且富有竞争力，并能与制程开发一同优化的IP库。为使客户加快对7纳米技术的采用，格芯拓展了它的战略合作伙伴范围，现与INVECAS建立合作关系，合作范围超越14LPP和FDX™制程，现已涵盖了7纳米制程技术的铸造IP开发。这将为客户建立符合性能、功耗、面积需求的早期设计提供了坚实的基础。 基于在14LPP技术平台的成功，格芯的7纳米FinFET技术定位于推动下一代的计算应用，满足对超高性能的需求，其应用范围包括高端移动SoC 和云服务器处理器及网络基建。公司的高性能产品得到22FDX® 和12FDX™的增强，而这两项技术都已达到下一代智能连接设备对超低功耗的要求， 此类设备用于移动计算，5G连接，人工智能以及无人驾驶技术。 格芯的7纳米FinFET将得到完整的基础平台和复杂的IP，包括ASIC产品。实验芯片与来自高端客户的IP已经在8号晶圆厂投入运行。本技术预计将于2017年下半年可用于客户产品设计，将于2018年早期投入风险生产。 关于格芯 格芯是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。
