Leading-edge foundry’s proven silicon technology poised to help enable significant performance and power efficiency improvements for AMD’s next-generation products

Santa Clara, Calif., November 5, 2015 — GLOBALFOUNDRIES today announced it has demonstrated silicon success on the first AMD (NASDAQ: AMD) products using GF’s most advanced 14nm FinFET process technology. As a result of this milestone, GF’s silicon-proven technology is planned to be integrated into multiple AMD products that address the growing need for high-performance, power-efficient compute and graphics technologies across a broad set of applications, from personal computers to data centers to immersive computing devices.

AMD has taped out multiple products using GF’s 14nm Low Power Plus (14LPP) process technology and is currently conducting validation work on 14LPP production samples. Today’s announcement represents another significant milestone towards reaching full production readiness of GF’s 14LPP process technology, which will reach high-volume production in 2016. The 14LPP platform taps the benefits of three-dimensional, fully-depleted FinFET transistors to enable customers like AMD to deliver more processing power in a smaller footprint for applications that demand the ultimate in performance.

“FinFET technology is expected to play a critical foundational role across multiple AMD product lines, starting in 2016,” said Mark Papermaster, senior vice president and chief technology officer at AMD. “GF has worked tirelessly to reach this key milestone on its 14LPP process. We look forward to GF’ continued progress towards full production readiness and expect to leverage the advanced 14LPP process technology across a broad set of our CPU, APU, and GPU products.”

“Our 14nm FinFET technology is among the most advanced in the industry, offering an ideal solution for demanding high-volume, high-performance, and power-efficient designs with the best die size,” said Mike Cadigan, senior vice president of product management at GF. “Through our close design-technology partnership with AMD, we can help them deliver products with a performance boost over 28nm technology, while maintaining a superior power footprint and providing a true cost advantage due to significant area scaling.”

GF’s 14LPP FinFET is ramping with production-ready yields and excellent model-to-hardware correlation at its Fab 8 facility in New York. In January, the early-access version of the technology (14LPE) was successfully qualified for volume production, while achieving yield targets on lead customer products. The performance-enhanced version of the technology (14LPP) was qualified in the third quarter of 2015, with the early ramp occurring in the fourth quarter of 2015 and full-scale production set for 2016.

ABOUT GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

Contacts:

Erica McGill
GF
(518) 305-5978
[email protected]

Santa Clara, Calif, October 5, 2015 – GLOBALFOUNDRIES, a leading provider of advanced semiconductor manufacturing technology, today appointed Bami Bastani as senior vice president of its Radio Frequency (RF) Business Unit.

With the recent acquisition of IBM’s Microelectronics Division, GF has solidified its technology leadership in wireless front-end module solutions. The company has significantly broadened its existing RF offerings with differentiated RF silicon-on-insulator (RFSOI) and high-performance silicon germanium (SiGe) technologies geared to enable complex RF switches, high-performance power amplifiers, and integrated front-end applications in mobile devices. Coupling these new capabilities with the company’s existing high-voltage CMOS and RF MEMS technologies means GF now offers a complete solution that is unmatched in the market.

Bastani brings more than 35 years of high-tech, semiconductor, and RF experience to GF, and will focus on delivering the next generation of its RF roadmap. He will look to capture further opportunities in the automotive, home, and growing Internet of Things (IoT) markets. Bastani will lead a strong team with a history of providing high-quality, high-performance solutions that address the increasing complexity of mobile radio devices.

“Bami is an experienced executive with deep knowledge of the RF industry. He brings to GF years of leadership and management capabilities that will enable us to grow our RF business,” said GF CEO Sanjay Jha. “Bami has been part of the semiconductor industry for several decades, and his experience spans beyond RF to wafer manufacturing operations and market growth strategies. He adds incredible strength to our already deep leadership team.”

Prior to joining GF, Bastani was President, CEO and Board Member of Meru Networks, a global enterprise- grade Wi-Fi networks solution provider, from 2012 to earlier this year. Bastani transformed Meru from a hardware company to a solution provider with emphasis on Software, Software Defined Networks (2015 SDN Excellence Award), and Subscription Cloud offering (WaaS). He brought a vertical market strategic focus to the company allowing it to broaden its offerings and customer base.

Before that, Bastani has served as the president and CEO as well as in board of director positions in the mobility, consumer, and broadband markets. These include president and CEO roles at Trident Microsystems, Inc., and ANADIGICS Inc. Bastani also served in executive positions at Fujitsu Microelectronics, National Semiconductor and Intel Corporation.

Bastani earned his Ph.D. and MSEE in Microelectronics at Ohio State University. He holds three U.S. Patents, has several publications on semiconductor technology, and has given several invited keynotes on topics of innovation and corporate management.

ABOUT GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by the Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

Media Contact:

Jason Gorss
GF
518-698-7765
[email protected]

Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology

EuMW 2015, Paris, France, September 3: GF, a leading provider of advanced semiconductor manufacturing technology, today announced it has partnered with Catena, a leader in Radio Frequency (RF) Communication IPs for connectivity, to offer complete Wi-Fi® and Bluetooth® solutions for System-on-Chip (SoC) designers targeting mobile, Internet-of-Things (IoT), RF connectivity markets.

Today, designers need an optimized, highly integrated wireless connectivity solution to satisfy the ever-increasing low-power and cost requirements of mobile platforms, wearables and other IoT devices. GF market-leading 28nm Super Low Power (SLP) technology with integrated RF, combined with Catena’s silicon-proven RF IPs offer a power- efficient, cost-optimized solution that provides on-chip features that can be easily integrated into customer applications.

“We are delighted to partner with GF for the development of Catena´s next generation connectivity solutions,” says Mats Carlsson, Director for Business Development at Catena. “This partnership gives Catena access to advanced technology nodes supporting our comprehensive technology roadmap for Wi-Fi and BT connectivity. A close cooperation with leading foundries such as GF together with the latest innovations from Catena offers our customers new levels of product performance, reliability and scalability, and it enables us to push the envelope of integrated RF Front-End innovation. The validation results of Catena´s first 28nm-SLP silicon for RF applications correlate well with simulations.”

“Catena’s IP skills and competencies in wireless RF mixed signal technologies, coupled with GF RF solution enables us to further strengthen our leadership in wireless connectivity and connected devices,” said Peter Rabbeni, director of RF product marketing and business development at GF. “With customer silicon content increasing with each new generation of smartphone the demand for these chips is rapidly increasing. Partnering with Catena enables us to expand our expertise and capabilities and provide radio power solutions for highly integrated mobile applications.”

Based on GF’s 28nm-SLP technology with HKMG, the process technology includes a comprehensive set of design capabilities enabling chip designers to integrate critical RF SoC functionality into their products. The technology is designed for the next generation of connected devices that require low standby power and long battery life integrated with RF/wireless functionality. The technology is enabled with key RF features, including core and I/O (1.5V/1.8V) transistor RF models along with 5V LDMOS devices, which simplifies RF SoC design.

Catena’s Connectivity RF IP portfolio includes optimized, very low power Bluetooth Smart radio, Bluetooth Smart Ready radio, Wi-Fi (802.11a/b/g/n/ac 1×1, 2×2 and 4×4 MIMO) radios and combo Bluetooth / Wi-Fi radio. The radio IPs are available/under development at GF 28nm-SLP technology, and may be ported to alternatives based on customer requirements. Solutions for GNSS/FM broadcast systems are also found in the offerings of Catena.

GF’s 28nm-SLP technology is the first in the industry to provide design enablement support optimized to meet low power and cost requirements of integrated RF SoCs. The technology utilizes the companies’ production-proven, 28nm-SLP silicon-validated design flows, which include a complete set of libraries, compilers, and complex IP.

About Catena

Since its establishment in 1986, Catena is recognized as the partner of choice for global IC makers in designing wireless connectivity and sensor electronics system solutions created by world-class RF, signal processing and system architecture experts. Catena is providing full custom IC developments as well as complete System IP for various applications, enabling its customer’s fast time to market. The developments are mainly one chip solutions including RF, Analog, Mixed Signal, Digital Signal Processing, Embedded Cores, Embedded Software and tooling. For further information please visit www.catena.nl.

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by the Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

Media Contact:

Erica McGill
GF
518-305-5978
[email protected]

Mats Carlsson
Catena Holding BV
Phone: +46 8 5059 5100
[email protected]

GLOBALSOLUTIONS^SM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive

EuMW 2015, Paris, September 3, 2015 – QEOS, Inc., a world leading designer of connectivity and sensing CMOS millimeter-wave (mmWave) solutions, and GLOBALFOUNDRIES, a leading provider of advanced semiconductor manufacturing technology, today announced they are partnering to co-develop the industry’s first mmW CMOS platform.

Leveraging GF’s 45nm and 40nm low-power process technologies, the mmW platform includes support for the higher data rates required in future mobile broadband access networks, while enabling customers to integrate mixers, Low Noise Amplifiers (LNAs), Power Amplifiers (PAs), and Inter-Frequency (IF) amplifiers, all in a single package. The co-designed platform will leverage GF’s production-proven expertise in advanced silicon RF technologies and QEOS’ next-generation design environment and IP to expand the mmWave wireless technology offerings to enable gigabit interactivity everywhere—from centimeters to hundreds of meters—at a cost of less than $500 per link.

Demonstrations of a 77GHz CMOS Design Library and an adaptive 60GHz CMOS link for gigabit wireless outdoor connectivity can be seen during European Microwave Week, to be held September 6 – 11, 2015 in Paris, France.

The available mmW IP includes:

• Low-power Bits In/Out architecture
• BIST/BIOS for digital die sort
• Beam Steering
• Integrated Transceiver
• Frequency Synthesizer
• Co-designed System in Package with Antenna

“MmW technology is a key pillar for next-generation wireless markets including IoT, 5G and automotive,” said Ted Letavic, department leader of strategic applications and product segments at GF. “Our expanded partnership with QEOS enables our customers to address the challenging requirements for adaptive next-generation gigabit wireless sensing and connectivity, and lays the foundation for accelerating market adoption of mmW products and solutions in high-growth markets.”

“We are honored to partner with one of the world’s leading advanced silicon manufacturers to create the industry’s first mmW CMOS platform. We look forward to supporting our customers in the rapidly growing mmWave markets,” said Ara Chakrabarti, Chief Operating Officer of QEOS, Inc.

“GF’s and QEOS’ partnership is a key milestone for enabling the next generation of low-power mmWave CMOS,” said Rob Shaddock, Chief Technology Officer of TE Connectivity. “TE Connectivity has been watching the developments in this field closely, and we believe that this is going to have a major impact across the connectivity and sensing markets.”

As part of the GLOBALSOLUTIONS partnership, QEOS 45/40nm based mmWave CMOS IP will be available in two forms. Basic block level IP will be available from GF, while more complex subsystem IP will be licensable directly from QEOS. QEOS will provide support and design services for all IP.

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by the Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

About QEOS, INC.

Headquartered in Milpitas, California, QEOS is a leading provider of low-power connectivity and sensing CMOS millimeter-wave solutions delivered via a portfolio of innovative technologies in wireless and wireline data communications.

Media Contact:

QEOS:

Romain Pelard
Director of Product Management and Marketing
[email protected]

GF:

Erica McGill
Technology Communications
[email protected]

22FDX® offers the best combination of performance, power consumption and cost for IoT, mainstream mobile, RF connectivity, and networking

Santa Clara, Calif., and Dresden, Germany, July 13, 2015: GLOBALFOUNDRIES today launched a new semiconductor technology developed specifically to meet the ultra-low-power requirements of the next generation of connected devices. The “22FDX” platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies, providing an optimal solution for the rapidly evolving mainstream mobile, Internet-of-Things (IoT), RF connectivity and networking markets.

While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides the best path for cost-sensitive applications by leveraging the industry’s first 22nm two-dimensional, fully-depleted silicon-on-insulator (FD-SOI) technology. It offers industry’s lowest operating voltage at 0.4 volt, enabling ultra-low dynamic power consumption, less thermal impact, and smaller end-product form-factors. The 22FDX platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.

“The 22FDX platform enables our customers to deliver differentiated products with the best balance of power, performance and cost,” said Sanjay Jha, chief executive officer of GF. “In an industry first, 22FDX provides real-time system software control of transistor characteristics: the system designer can dynamically balance power, performance, and leakage. Additionally, for RF and analog integration, the platform delivers best scaling combined with highest energy efficiency.”

22FDX leverages the high-volume 28nm platform in GF’ state-of-the-art 300mm production line in Dresden, Germany. This technology heralds a new chapter in the “Silicon Saxony” story, building on almost 20 years of sustained investment in Europe’s largest semiconductor fab. GF launches its FDX platform in Dresden by investing $250 million for technology development and initial 22FDX capacity. This brings the company’s total investment in Fab 1 to more than $5 billion since 2009. The company plans to make further investments to support additional customer demand. GF is partnering with R&D and industry leaders to grow a robust ecosystem and to enable faster time-to-market as well as a comprehensive roadmap for its 22FDX offering.

GF’ 22FDX platform enables software-control of transistor characteristics to achieve real time tradeoff between static power, dynamic power and performance. This platform consists of a family of differentiated products architected to support the needs of various applications:

• 22FDX-ulp: For the mainstream and low-cost smartphone market, the base ultra-low power offering provides an alternative to FinFET. Through the use of body-biasing, 22FDX-ulp delivers greater than 70 percent power reduction compared to 0.9 volt 28nm HKMG, as well as performance equivalent to FinFET. For certain IoT and consumer applications, the platform can operate at 0.4 volt, delivering up to 90 percent power reduction compared to 28nm HKMG.
• 22FDX-uhp: For networking applications with analog integration, this offering is optimized to achieve the same ultra-high performance capabilities of FinFET while minimizing energy consumption. 22FDX-uhp customizations include forward body-bias, application optimized metal stacks, and support for 0.95 volt overdrive.
• 22FDX-ull: The ultra-low leakage offering for wearables and IoT delivers the same capabilities of 22FDX-ulp, while reducing leakage to as low as 1pa/um. This combination of low active power, ultra-low leakage, and flexible body-biasing can enable a new class of battery-operated wearable devices with an order of magnitude power reduction.
• 22FDX-rfa: The radio frequency analog offering delivers 50 percent lower power at reduced system cost to meet the stringent requirements of high-volume RF applications such as LTE-A cellular transceivers, high order MIMO WiFi combo chips, and millimeter wave radar. The RF active device back-gate feature can reduce or eliminate complex compensation circuits in the primary RF signal path, allowing RF designers to extract more of the intrinsic device Ft performance.

GF has been working closely with key customers and ecosystem partners to enable optimized design methodology and a full suite of foundational and complex IP. Design starter kits and early versions of process design kits (PDKs) are available now with risk production starting in the second half of 2016.

Strong support from Customers and Partners for 22FDX

​“GF’ FDX platform, using an advanced FD-SOI transistor architecture developed through our long-standing research partnership, confirms and strengthens the momentum of this technology by expanding the ecosystem and assuring a source of high-volume supply,” said Jean-Marc Chery, chief operating officer of STMicroelectronics. “FD-SOI is an ideal process technology to meet the unique always-on, low-power requirements of IoT and other power-sensitive devices worldwide.”

“Freescale’s® next-generation i.MX series of applications processors is leveraging the benefits of FD-SOI to achieve industry leading ultra-low power performance-on-demand solutions for automotive, industrial and consumer applications,” said Ron Martino vice president of applications processors and advanced technology adoption for Freescale’s MCU group. “GF’ 22FDX platform is a great addition to the industry which provides a high volume manufacturing extension of FD-SOI beyond 28nm by continuing to scale down for cost and extend capability for power-performance optimization.”

“The connected world of mobile and IoT devices depend on SoCs that are optimized for performance, power and cost,” said Will Abbey, general manager, physical design group, ARM. “We are collaborating closely with GF to deliver the IP ecosystem needed for customers to benefit from the unique value of 22FDX technology.”

“VeriSilicon has experience designing IoT SoCs in FD-SOI technology and we have demonstrated the benefits of FD-SOI in addressing ultra-low power and low energy applications,” said Wayne Dai, president and CEO of VeriSilicon Holdings Co. Ltd. “We look forward to collaborating with GF on their 22FDX offering to deliver power, performance and cost optimized designs for smart phones, smart homes, and smart cars especially for the China market.”

“Next-generation connected devices, in markets from wearables and IoT to mobile and consumer, require semiconductor solutions that provide an optimal balance of performance, power and cost,” said Tony King-Smith, EVP Marketing, Imagination Technologies. “The combination of GF’ new 22FDX technology with Imagination’s broad portfolio of advanced IP – including PowerVR multimedia, MIPS CPUs and Ensigma communications – will enable more innovation by our mutual customers as they bring differentiated new products to the market.”

“FD-SOI technology can provide a multi-node, low-cost roadmap for wearable, consumer, multimedia, automotive, and other applications,” said Handel Jones, founder and CEO, IBS, Inc. “GF’ 22FDX offering brings together the best in low-power FD-SOI technology in a low-cost platform that is expected to experience very strong demand.”

“FD-SOI can deliver significant improvements in performance and power savings, while minimizing adjustments to existing design-and-manufacturing methodologies,” said CEA-Leti CEO Marie-Noëlle Semeria. “Together, we can collectively deliver proven, well-understood design-and-manufacturing techniques for the successful production of GF’ 22FDX for connected technologies.”

“GF’ announcement is a key milestone for enabling the next generation of low-power electronics,” said Paul Boudre, CEO of Soitec. “We are pleased to be GF’ strategic partner. Our ultra-thin SOI substrate is ready for high-volume manufacturing of 22FDX technology.”

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by the Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

Contact:

Jason Gorss
(518) 698-7765
[email protected]

Erica McGill
(518) 305-5978
[email protected]

Transaction adds differentiating technologies, world-class technologists, and intellectual property

Santa Clara, Calif., July 1 2015: GlobalFoundries today announced that it has completed its acquisition of IBM’s Microelectronics business.

With the acquisition, GF gains differentiated technologies to enhance its product offerings in key growth markets, from mobility and Internet of Things (IoT) to Big Data and high-performance computing. The deal strengthens the company’s workforce, adding decades of experience and expertise in semiconductor development, device expertise, design, and manufacturing. And the addition of more than 16,000 patents and applications makes GF the holder of one of the largest semiconductor patent portfolios in the world.

“Today we have significantly enhanced our technology development capabilities and reinforce our long-term commitment to investing in R&D for technology leadership,” said Sanjay Jha, chief executive officer of GF. “We have added world-class technologists and differentiated technologies, such as RF and ASIC, to meet our customers’ needs and accelerate our progress toward becoming a foundry powerhouse.”

Through the addition of some of the brightest and most innovative scientists and engineers in the semiconductor industry, GF solidifies its path to advanced process technologies at 10nm, 7nm, and beyond.

In RF, GF now has technology leadership in wireless front-end module solutions. IBM has developed world-class capabilities in both RF silicon-on-insulator (RFSOI) and high-performance silicon-germanium (SiGe) technologies, which are highly complementary to GF’s existing mainstream technology offerings. The company will continue to invest to deliver the next generation of its RFSOI roadmap and looks to capture opportunities in the automotive and home markets.

In ASICs, GF now has technology leadership in wired communications. This enables the company to provide the design capabilities and IP necessary to develop these high-performance customized products and solutions. With increased investments, the company plans to develop additional ASIC solutions in areas of storage, printers and networking. The most recent ASIC family, announced in January and built on GF’s 14nm-LPP technology, has been well accepted in the marketplace with several design wins.

GF increases its manufacturing scale with fabs in East Fishkill, NY and Essex Junction, VT. These facilities will operate as part of the company’s growing global operations, adding capacity and top-notch engineers to better meet the needs of its existing and new customers.

Moreover, the transaction builds on significant investments in the burgeoning Northeast Technology Corridor, which includes GF’s leading-edge Fab 8 facility in Saratoga County, NY and joint R&D activities at SUNY Polytechnic Institute’s College of Nanoscale Science and Engineering in Albany, NY. The company’s presence in the northeast now exceeds 8,000 direct employees.

The acquisition includes an exclusive commitment to supply IBM with some of the world’s most advanced semiconductor processor solutions for the next 10 years. GF also gets direct access to IBM’s continued investment in world-class semiconductor research, solidifying its path to advanced process geometries at 10nm and beyond.

For more information about the acquisition, please visit: https://globalfoundries.com/acquisition/

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by the Mubadala Development Company. For more information, visit https://www.globalfoundries.com.

Contacts:

Jason Gorss
(518) 698-7765
[email protected]

Erica McGill
(518) 305-5978
[email protected]

Santa Clara, Calif., June 29 2015: GLOBALFOUNDRIES today announced the company has obtained clearance from the Committee on Foreign Investment in the United States (CFIUS) for its proposed acquisition of IBM’s microelectronics business announced on October 20, 2014. With the conclusion of the CFIUS review, the companies have completed the regulatory process in the United States. All necessary regulatory approvals outside the United States were previously received. The transaction is expected to close in the near future.

More information about the proposed transaction can be found at https://www.globalfoundries.com/pending-acquisition/home.

About GF

GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by the Mubadala Development Company. For more information, visit https://www.globalfoundries.com.