June 12, 2025 The world is becoming increasingly connected, driven by the exponential growth of data and the rise of transformative technologies like AI. This connectivity revolution is placing unprecedented demands on RF technologies, from the need for seamless cloud-edge data links to the continued evolution of 5G, 6G and beyond. GF’s comprehensive RF portfolio, including our industry-leading RFSOI, SiGe, 22FDX+ and RF GaN platforms, is purpose-built to push the boundaries of what’s possible in connectivity, but we’re not doing it alone. Together with innovative partners like Falcomm, we’re moving the industry forward, providing our customers with cutting-edge solutions to enhance performance, power and integration and create connected technologies with higher signal quality, better efficiency and longer battery life. As the RF world prepares to gather in San Francisco for IMS 2025, GF and Falcomm are excited to share the latest milestones from our partnership that is shaping the future of RF technology. About Falcomm Headquartered in Atlanta, Georgia, Falcomm, a member of the GlobalFoundries (GF) GlobalSolutions™ Ecosystem, is an emerging leader in the design and development of high-efficiency RF and millimeter-wave integrated circuits. Founded by Dr. Edgar Garay out of pioneering research at Georgia Tech, the company is scaling rapidly, driven by demand across defense, aerospace, and commercial wireless markets. Falcomm’s team includes some of the industry’s best RFIC designers, with core expertise in RF power amplifier (PA) and front-end module design. At the heart of Falcomm’s innovation is its patented Dual-Drive™ power amplifier technology. This process- and frequency-agnostic circuit architecture delivers breakthrough performance in power-added efficiency (PAE), output power, linearity, and bandwidth. The technology has now been successfully implemented across multiple GF platforms including 22FDX®, 130NSX, 45RFSOI, demonstrating impressive results in diverse applications. Most recently, Falcomm is implementing Dual-Drive™ architecture on GF’s 130RF GaN process, with the goal of delivering the world’s most efficient and linear GaN power amplifiers to date. Falcomm is proudly U.S.-based, and all products are fully designed and manufactured domestically, including products manufactured by GF through their trusted facilities in New York and Vermont. This ensures not only performance excellence but also supply chain resilience for critical infrastructure and defense applications. Now, let’s take a look at some of the exciting technologies that we will be showcasing at IMS this year. FCM1401 on GF 130NSX Ku-band PA Available for evaluation and licensing to qualified partners Falcomm has completed timely validation of its FCM1401 product, a high-efficiency Ku-band power amplifier fabricated using GF’s 130NSX bulk CMOS process. This PA delivers a compelling combination of performance, integration, and cost scalability. Performance highlights include: Frequency: 12.5GHz – 16GHz PAE: 50 % Output Power: 20 dBm Gain: 23 dB This product is being used in tactical and commercial Ku-band applications where efficiency, cost and performance are critical. The FCM1401 and FCM1401 evaluation boards are currently available for purchase at Falcomm.com and IP licensing agreements through GF IP Portal. FCM2801 & FCM3901 – 28 GHz / 39 GHz Power Amplifiers on GlobalFoundries 45RFSOI for 5G mmWave Available for evaluation and licensing to qualified partners Falcomm has launched two high-efficiency mmWave power amplifiers: FCM2801 (28 GHz) and FCM3901 (39 GHz), built on GlobalFoundries’ 45RFSOI platform and optimized for 5G New Radio (NR) FR2 applications. These solutions are designed to maximize silicon-area/power efficiency, linearity, thermal performance, and output power, making them ideal for ground-based radios, mobile devices, infrastructure, phased arrays, and broadband front ends. The GF 45RFSOI process enables high power density and efficient heat dissipation without large die size or complex thermal strategies, supporting cost-effective and compact system designs. Both products leverage Falcomm’s patented Dual-Drive™ PA architecture to support advanced SWaP-constrained platforms. 39GHz 5G PA in GF 22FDX+ and enhanced 28GHz high-power PA in GF 45RFSOI for 5G mmWave Available for evaluation and licensing in Q4 2025 Falcomm is expanding its mmWave product line with two advanced 5G power amplifiers: a new 39 GHz PA built on GF 22FDX+ platform and an enhanced high-power 28 GHz PA on GF 45RFSOI. These solutions are engineered for exceptional power efficiency, linearity, and thermal performance—ideal for 5G NR FR2 applications across infrastructure, phased arrays, and compact, power-constrained platforms. The 22FDX+ version of the 39 GHz PA delivers outstanding integration potential with digital and mixed-signal blocks, making it an ideal candidate for advanced beamforming ICs and phased array modules. The updated 28 GHz PA on 45RFSOI achieves higher output power and improved thermal handling, while maintaining Falcomm’s signature Dual-Drive™ efficiency and compact footprint. Join Us at IMS 2025 Falcomm will be showcasing its latest technologies alongside GlobalFoundries at IMS 2025. We invite attendees, partners, and customers to visit Falcomm at Booth 4103 and GF at Booth 149 to explore how your products can benefit from Falcomm’s patented Dual-Drive™ power amplifier architecture and GF’s storied RF-leadership and manufacturing excellence. Join us to discover how we’re pushing the boundaries of RF performance with unmatched efficiency, linearity, and integration! For more information or to schedule a meeting at IMS, contact us at [email protected]
