June 16-21, 2024Washington, DC IMS is dedicated to all things microwaves and RF, including numerous sessions focused on GF technologies and solutions, developed under GF Labs. Industry Workshop (IWTU1)Tuesday, June 18, 8am ET “Silicon technologies for 5G/6G Cellular Front-End Modules” Abstract – “The research area of improving the performance, cost and size of 5G RF solutions and evolution to 6G is very active with many developments and it is one of the driving factors for semiconductor industry. Mobile cellular subscribers reached more than 6 billion in 2022 and 5G LTE brings high data capacity as low latency using sub-6GHz and mm-Wave spectrum. Mm-Wave up to 300GHz will play a major role in future 6G networks. The proliferation of worldwide smartphones has been in part possible due to increased computational power of CMOS technology and RF integration This has made also possible to essentially enhance RF CMOS through digital signal processing (DSP) and digital calibration. The industrial workshop will cover 5G semiconductor technologies and architectures currently used in RF Front End Modules for cellular applications, the challenges for the 5G deployment as well the evolution to 6G.” Presented by: Dr. Venkata Vanukuru, Globalfoundries, India: Silicon technologies for 5G/6G Cellular Circuits Dr. Anuranjan Puttaraju, Skyworks, USA: Principles of 5G/5G+ Cellular Power Amplifier Design. Dr. Florinel Balteanu, Skyworks, USA: 5G/6G Cellular Front End Module Principles Conference Professor University Technology Title RFIC Inchan Ju Ajou SIGE8XP Fully Integrated SiGe HBT BiCMOS Transmit-Receive Front-End IC for 5G mmW Radio with a Reconfigurable Built-In Diode RF Switch, RFIC Inchan Ju Ajou SIGE8XP An Efficient, High Power Q-Band SiGe HBT Power Amplifier with a Compact Four-Way Wilkinson Power Combiner Balun for Emerging Very Low-Earth-Orbit SATCOM RFIC Inchan Ju Ajou SIGE8XP A Compact, Highly Linear Ku-Band SiGe HBT Power Amplifier Using Shared Single Center-Tap Four-Way Output Transformer Balun for Emerging Low Earth Orbit SATCOM Phased-Array Transmitter IMS Kaushik Sengupta Princeton SIGE9HP Deep Learning Enabled Generalized Synthesis of Multi-Port Electromagnetic Structures and Circuits for mmWave Power Amplifiers RFIC Payam Heydari UC Irvine 45RFSOI A CMOS Fully Integrated 120-Gbps RF-64QAM F-band Transmitter with an On-Chip Antenna for 6G Wireless Communication IMS Payam Heydari UC Irvine 22FDX A Power-Efficient, F-Band, 6.5-dB NF, Staggered-Tuned, Inverter-Based CMOS LNA for 6G Receivers RFIC Hua Wang ETHZ 45RFSOI "A D-Band Complex Neutralization Cascode Power Amplifier with A Source-Gate Driven Cascode for Enhanced Bandwidth and Efficiency" RFIC Hua Wang ETHZ 22FDX "A 25-40 GHz Three-Way Power Amplifier with No Load ModulationAchieving Broadband Deep Power Back-Off Efficiency Enhancement" IMS Hua Wang ETHZ 22FDX "Transfer Learning Assisted Fast Design Migration Over Technology Nodes: A Study on Transformer Matching Network" IMS Hua Wang ETHZ 22FDX "A 24-GHz 4-Element Multi-Beam Wireless Energy Harvesting Array with Class-F Rectifiers Achieving 51.5% PCE" IMS Hua Wang ETHZ 45RFSOI Analysis and Design of Differential Complex Neutralization Power Amplifiers for Efficient-Yet-Linear High Mm-Wave Applications” IMS Çağrı Ulusoy KIT 22FDX A 124–144GHz Rectifier Achieving 22% RF-to-DC Conversion Efficiency in 22nm FD-SOI CMOS Technology IMS Ken O UT Dallas 22FDX 19-GHz VCO with Phase Noise of -117dBc/Hz at 1-MHz Offset Using an Array of Near Minimum Size Transistors and Intelligent Post Fabrication Selection IMS John Cressler Georgia Tech SIGE9HP A W-Band Stacked Frequency Quadrupler With A Dual Driven Core Achieving 10.3% Drain Efficiency IMS John Cressler Georgia Tech SIGE9HP A 43–84GHz, Wideband Frequency Doubler With a Symmetric, AC-Terminated Transformer Balun IMS Gabriel M. Rebeiz UCSD 45RFSOI A 140GHz FMCW Ultra Wideband High Dynamic Range RADAR Utilizing 8×8 Phased Arrays IMS Joseph Bardin UMass Amherst 45SG01 A 1.6 mW Cryogenic SiGe LNA IC For Quantum Readout Applications Achieving 2.6 K Average Noise Temperature from 3–6 GHz IMS Taiyun Chi Rice U 45RFSOI Automated mmWave Power Amplifier Design Flow and a 28-GHz Design Example in 45-nm CMOS SOI RFIC Frank Ellinger TU Dresden 22FDX A Class-J/F 60GHz Power Amplifier with 42.3% Power Added Efficiency in FDSOI CMOS RFIC Gabriel M. Rebeiz UCSD 45RFSOI A 26.5–35GHz High Linearity VGA with an RMS Phase Error of 0.9°–2.8° Utilizing a Novel Hybrid Coupling Technique in 45RFSOI RFIC Patrick Reynaert KU Leuven 22FDX A D-Band Power Amplifier with Optimized Common-Mode Behaviour Achieving 32Gb/s in 22-nm FD-SOI RFIC Harish Krishnaswamy Columbia 45RFSOI Phased-Array-Compatible Area-Efficient D-Band Power Amplifiers in 45 RF SOI Based on Cascade Stacking RFIC Gabriel M. Rebeiz UCSD SIGE9HP Transimpedance Amplifiers with 95GHz Transimpedance Bandwidth and 1.5% THD for 800G Coherent Optical Communications RFIC Waleed Khalil Ohio State 45SG01 A Study of Total Dose Radiation Effects in Ka-Band Fractional-N PLLs in 45nm SiGe BiCMOS RFIC Gabriel M. Rebeiz UCSD 45RFSOI A 2×40Gb/s Ultra-Wideband 131–173GHz Dual Receiver for Point-to-Point Communication Systems with NF of 5.7dB in RFSOI RFIC Gabriel M. Rebeiz UCSD 45RFSOI A D-Band Scalable 128-Channel Dual-Polarized Receive Phased-Array with On-Chip Down Converters for 2×2 MIMO Achieving 2×42Gbps RFIC Gabriel M. Rebeiz UCSD 45RFSOI A Compact Ultra-High-Linearity 7-to-20GHz Passive Mixer Achieving up to 37dBm IIP3 and 25.1dBm IP1dB in 45nm CMOS SOI RFIC Aydin Babakhani UCLA SIGE9HP A 360GHz Single-Element Multi-Mode Orbital Angular Momentum Cavity Antenna-Based Transmitter in 90nm SiGe BiCMOS RFIC Payam Heydari UC Irvine 45RFSOI A CMOS Fully Integrated 120-Gbps RF-64QAM F-Band Transmitter with an On-Chip Antenna for 6G Wireless Communication RFIC Wooram Lee Penn State 45RFSOI A D-Band Bi-Directional Current-Reuse Common-Gate Amplifier in 45nm RFSOI Generated by wpDataTables