June 15-20, 2025San Francisco, CA IMS is dedicated to all things microwaves and RF, including numerous sessions focused on GF technologies and solutions, developed under GF Labs. GF Technology Papers / Presentations Conference Session Technology Professor/Author University Title IMS We2H-4 22FDX Jinglong Xu, Mohamed Eleraky, Tzu-Yuan Huang, Chenhao Chu, Hua Wang ETH Zurich We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3 IMS Th3F-3 22FDX Chenhao Chu, Jinglong Xu, Yuqi Liu, Jianping Zeng, Adam Wang, Takuma Torii, Shintaro SHINJO, Koji Yamanaka, Hua Wang ETH Zurich, Mitsubishi Electric Corp Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+ RFIC RTu4B-2 22FDX Vadim Issakov TU Braunschweig RTu4B-2: A 126–137GHz Regenerative Frequency Shifter in 22nm FDSOI RFIC Rtu4B-1 22FDX Vadim Issakov TU Braunschweig RTu4B-1: 110-to-140GHz Frequency Tripler with 13% Efficiency, 7.2dBm Psat Using Adaptive Biasing and 3rd Harmonic Boosting in 22nm FDSOI RFIC Rtu1C-5 22FDX Vadim Issakov TU Braunschweig RTu1C-5: Fully-Integrated Autonomous K-Band Complex Permittivity Sensor in 22nm FDSOI for Biomedical Body Parameter Monitoring Applications RFIC Rtu2A-5 HPSiGe Inchan Ju Ajou University RTu2A-5: A 5/6GHz Compact, Dual-Band, and Highly Linear Wi-Fi 6E SiGe HBT Power Amplifier Using Q-Modulated Switched Capacitor Interstage Matching Network and Optimized Output Stage RFIC RMo2C-3 22FDX Gabriel Rebeiz UCSD RMo2C-3: A Compact 25–32GHz Frequency Doubler with up to 32% Efficiency and >39 dBc Harmonic Rejection in 22nm FDSOI RFIC RMo4A-2 22FDX James Buckwalter UCSB RMo4A-2: A 110 to 122-GHz Four-Channel Oversampling Digital-to-Phase Transmitter for Scalable, Energy-Efficient Arrays RFIC RMo4A-3 HPSiGe Najme Ebrahimi Northeastern RMo4A-3: A 45Gb/s D-Band Hybrid Star-QAM-OOK Transmitter Using a Quad-Harmonic Modulator with Constant Impedance Balanced Architecture in 90nm SiGe BiCMOS RFIC RMo4B-2 22FDX Hua Wang ETHZ RMo4B-2: A 3.23dB Average NF and 2.32dB Minimum NF V-/E-Band Common-Gate/Common-Source Joint-Feeding LNA with Three-Line Coupler Input Matching for Simultaneous Noise/Power Matching RFIC RTu1A-1 45nm Ali Niknejad UC Berkeley RTu1A-1: A 10 to 40GHz Stacked Push-Pull Class-B Power Amplifier in 45-nm CMOS SOI with 20.4dBm PSAT and Continuously Supporting 72Gb/s 64-QAM and 10Gb/s 1024-QAM Signals RFIC RTu2B-2 22FDX Ken O UT Dallas RTu2B-2: 400-GHz Concurrent Transceiver Imaging Pixel with Improved Noise Performance and Increased Injection Locking Range RFIC RTu2C-2 45nm Harish Krishnaswamy Columbia RTu2C-2: Heterogeneous Integration of a 0.15µm GaN Circulator and a 45nm RF SOI Voltage-Boosted Clock Generation IC RFIC RTu3C-3 22FDX Sorin Voinigescu U of Toronto RTu3C-3: A 204GS/s 1-to-2 Analog Demultiplexer in 22nm FDSOI CMOS RFIC RTu4B-3 22FDX Omeed Momeni UC Davis RTu4B-3: A 200GHz Quasi-Circulator with a Widely Tunable Termination for >30dB Isolation and 8.3dB SNR Degradation in a 22nm FD SOI Process IMS Tu1B-1 HPSiGe Najme Ebrahimi Northeastern Tu1B-1: Double HOOK: A 140 GHz 15 Gb/s Reconfigurable 3-Level ASK Modulator with Constant Input Impedance for High-Speed Connectivity IMS Tu1C-4 22FDX Kamran Entesari Texas A&M Tu1C-4: A 22nm CMOS 15–25GHz Dual-Differential Driver for RF Silicon Photonic Front-End IMS Tu4B-2 8SW Gabriel Rebeiz UCSD Tu4B-2: A 2:1 Bandwidth 3–6GHz Dual-Polarized True-Time-Delay Based Reconfigurable Intelligent Surface (RIS) IMS Tu4C-4 22FDX Friedel Gerfers TU Berlin Tu4C-4: A Highly-Efficient 4.3GBaud Push-Pull LDMOS Based Pre-Driver with 6V Signal-Swing for GaN HEMTs in 22nm FDSOI IMS We2G-2 22FDX James Buckwalter UCSB We2G-2: A 110–130-GHz Frequency Quadrupler with 12.5% Drain Efficiency in 22-nm FD-SOI CMOS IMS We2H-4 22FDX Hua Wang ETHZ We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3 IMS We3G-3 22FDX Frank Ellinger TU Dresden We3G-3: A 60GHz Super Harmonic Injection Locked Oscillator with Quadrature Outputs IMS Th1G-3 HPSiGe Sorin Voinigescu U of Toronto Th1G-3: A 132GHz SiGe BiCMOS Sampler for Linear Front-Ends IMS Th1G-4 22FDX Friedel Gerfers TU Berlin Th1G-4: A >22GS/s, 44dB SNDR Wideband 4×4 Time-Interleaved Sampling Front-End with Bulk-Driven Mismatch Calibration in 22nm FDSOI IMS IF1-7 12LP Robert Weigel FAU IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS IMS Th3D-3 HPSiGe Marco Spirito / Steffan Lehman TU Delft Th3D-3: Characterization Approaches to Reduce Process Variation Dependencies for On-Wafer Power Calibration Transfer Devices in Bi/CMOS Technologies IMS Th3F-3 22FDX Hua Wang ETHZ Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+ IMS Th3G-4: 45RFSOI Harish Krishnaswamy Columbia Th3G-4: A 140 GHz Low-Noise Amplifier in 45 nm RFSOI Based on a Joint-Noise-and-Gain-Optimized Embedding Network IMS Tu4D-3: 22FDX Vadim Issakov TU Braunschweig Tu4D-3: A Compact 8.2mW Complementary Current-Reusing D-Band Frequency Quadrupler in 22nm FDSOI CMOS IMS Tu4D-4 22FDX Vadim Issakov TU Braunschweig Tu4D-4: Comparison of Wideband Low-Power H-Band Frequency Doublers with and without a Driving Stage in 22nm FDSOI CMOS IMS We2B-1 HPSiGe Inchan Ju Ajou University We2B-1: A 22–30GHz Ultra Low RMS Phase Error SiGe HBT BiCMOS Active Vector Modulator Phase Shifter with a Tunable Two-Section Lumped Element Differential Quadrature Hybrid Generated by wpDataTables
