GlobalFoundriesoffers designers a broad portfolio of performance, power and area-optimized solutions designed to help bring Industry 4.0 products to life: from industrial and security MCUs that leverage 22FDX® FD-SOI and 40 nm bulk CMOS solutions with eNVM, to 22FDX-based wireless connectivity solutions and power ASSPs built on GF BCDLite® solutions.


The industrial IoT (IIoT) infrastructure transformation that is making Industry 4.0 a reality relies heavily on microcontroller units (MCUs). These MCUs must deliver new levels of endpoint artificial intelligence (AI), processing efficiency, ultra-low power, security and reliability.

The  GF®portfolio of proven, flexible MCU solutions are automotive-grade qualified, ensuring robust reliability for a wide range of industrial applications, including motor control, process control, robotics, smart grid metering and monitoring. The portfolio offers designers a broad choice of area, performance and power-optimized solutions and enables them to leverage embedded memories, broad operating-temperature ranges, high-reliability and low mask-count options.










22FDX®在业界最低的工作电压(0.4 V)和1 pA/µm的超低待机漏电情况下提供了同类最佳的性能。它的特点是eMRAM NVM的写入功率降低了>100倍*,可以实现频繁的省电关机,帮助设计者延长电池寿命,同时提高处理能力。

22FDX®解决方案使设计人员能够开发具有出色的功率放大器效率、低噪声系数和开关插入损耗优势的射频前端模块(FEM)。这些FEM、基带和eMRAM元件可以集成到一个IIoT SoC中,帮助设计人员结合实现目标所需的功能,同时大幅减少整体面积和成本。


22FDX® MRAM在125°C时具有出色的20年数据保留期。



GF 55LPX and 40LP with eNVM and 28SLP-ESF3, built on bulk CMOS platforms, are optimized for a range of power-performance MCU applications, including automotive, baseband SoCs, mobile multimedia, digital TVs/STBs, IoT and industrial. The solutions enable designers to leverage logic, analog, RF, ULP SRAM/logic combinations, high-K metal gate technology and high reliability, along with on-board memory for faster wakeup times, reduced system cost and improved security:

  • 55LPx具有高可靠性(汽车级IP)和高密度、低功率SRAM的特点
  • GF的40LP是业界唯一的40纳米汽车级0产品
  • 当需要为射频和超低功率提供灵活的混合技术选择时,28SLP对功率、性能和芯片成本进行了优化
  • ESF3 eFlash增加了强大的质量和可靠性,在恶劣的温度条件下提供零故障率。




When power matter

40LP solutions are ideal for power-sensitive  mobile and wireless applications. They feature flexible mixed-technology options for RF and low voltage.




GF 55LPX and 40LP solutions are in high-volume production and feature world-class D0 (< 0.04 def/in2) defect density.







GlobalFoundries® (GF®) 55 nm BCDLite® and 130 nm BCD/BCDLite® solutions enable designers to harness low-power logic enabled by optimized, low-voltage CMOS. Included are low/medium/high/ very-high-voltage extended drain and laterally double-diffused MOSFET transistors, as well as precision analog passives and non-volatile memory, all enabling robust reliability, significant performance, and voltage-handling and cost benefits. The solutions feature best-in-class power FETs that enable smaller dies and improved power conversion efficiency.

Pack power into smaller packages
GF power FETs provide up to 50% reduction in on-resistance versus earlier GF BCDLite processes, enabling, for example, a 30% smaller die for a step-down buck switching regulator application where power FETs occupy ~60% of the die area.

Pack a performance punch
55 nm BCDLite offers best-in-class Rsp versus BVdss performance for maximum power efficiency and smaller solution size. This is combined with high-density logic that enables advanced integration and area-efficient designs.

High reliability, in high volume
55 nm BCDLite and 130 nm BCD/BCDLite solutions feature world-class defect density (< 0.04 def/in2) and are in high-volume production, enabling customers to meet market demand at the high reliability that today’s power management products demand.




Wireless communications for industrial IoT hardware must deliver reliable connectivity with low latency to support the increasingly rigorous requirements in applications such as remote sensors with embedded artificial intelligence at the edge. 

The demands on this hardware keep growing as cellular (NB-IoT/LTE-M) and Wi-Fi connectivity continue to supplement or replace existing wired/Ethernet connections to further enable robotics, automation and intelligent connectivity applications in high-temperature, noisy manufacturing environments.



22FDX® from GFis the industry’s first and only 22 nm fully-depleted silicon-on-insulator solution. It delivers FinFET-like performance and smaller area, at a cost comparable to 28 nm bulk CMOS planar technologies. These benefits, paired with its combination of high-performance RF, high-density digital logic and reliable non-volatile memory  features—along with high-voltage transistors and ultra-low dynamic and leakage power—make 22FDX® solutions a perfect fit for industrial IoT applications. 

The isolated channel in 22FDX® reduces capacitance along with thermal and flicker (1/f) noise, enabling high-performance RF transceivers that can reliably receive data over longer distances in noisy industrial environments, without generating excess heat. Additionally, integrated high-voltage devices support high-efficiency RF power amplifiers and power conversion for ultra-reliable, power-efficient wireless connections.

Powerful & power-efficient
22FDX® adaptive body-bias enables high-density, high-performance digital elements for advanced features like AI at the edge, in a small footprint. Because it can operate at 500 MHz at an extremely low operating voltage (0.4 V Vdd) with < 1 pA/bit SRAM leakage current, 22FDX-based devices can run for years on small, inexpensive batteries, eliminating the need to add factory power cabling.

Memory that handles the heat
22FDX® MRAM endurance is 20 years at 125°C, well above the top end of the industrial -40 to 105°C standard. This versatile eMRAM technology is designed for code storage and offers customers proven, ultra-efficient embedded non-volatile memory for fast field updates, quick wakeup times and increased security, with faster time to market.