从农业到制造业，工业物联网应用通过普遍的智能连接成为可能，并通过5G部署和边缘的人工智能得到加强，在世界正在进行的数字化转型中处于领先地位。 GlobalFoundriesoffers designers a broad portfolio of performance, power and area-optimized solutions designed to help bring Industry 4.0 products to life: from industrial and security MCUs that leverage 22FDX® FD-SOI and 40 nm bulk CMOS solutions with eNVM, to 22FDX-based wireless connectivity solutions and power ASSPs built on GF BCDLite® solutions. 单片机 电源ASSP 无线连接 单片机The industrial IoT (IIoT) infrastructure transformation that is making Industry 4.0 a reality relies heavily on microcontroller units (MCUs). These MCUs must deliver new levels of endpoint artificial intelligence (AI), processing efficiency, ultra-low power, security and reliability.The GF®portfolio of proven, flexible MCU solutions are automotive-grade qualified, ensuring robust reliability for a wide range of industrial applications, including motor control, process control, robotics, smart grid metering and monitoring. The portfolio offers designers a broad choice of area, performance and power-optimized solutions and enables them to leverage embedded memories, broad operating-temperature ranges, high-reliability and low mask-count options.#mcus 90%的公司 据估计，一小时的车间停工时间价值高达300,000美元。 1/4 说这一小时可能花费100-500万美元*。 *信息技术情报咨询公司（ITIC），2019年5月16日。 使用带有eNVM的22FDX®的工业MCUGlobalFoundries®(GF®)22FDX®解决方案具有低功耗、自适应体偏压、模拟扩展和强大的eNVM功能，可实现集成、面积和功耗优化的工业MCU。解决方案选项包括eMRAM、低成本的电荷陷阱技术（CTT）和CB-RAM嵌入式存储器，以加快TTM和唤醒时间。抽升的高能效性能22FDX®在业界最低的工作电压（0.4 V）和1 pA/µm的超低待机漏电情况下提供了同类最佳的性能。它的特点是eMRAM NVM的写入功率降低了>100倍*，可以实现频繁的省电关机，帮助设计者延长电池寿命，同时提高处理能力。更多的功能，更小的空间22FDX®解决方案使设计人员能够开发具有出色的功率放大器效率、低噪声系数和开关插入损耗优势的射频前端模块（FEM）。这些FEM、基带和eMRAM元件可以集成到一个IIoT SoC中，帮助设计人员结合实现目标所需的功能，同时大幅减少整体面积和成本。设计，变得简单22FDX®的硅验证、MCU优化的IP组合，以及通过GF和FDXcelerator™合作伙伴计划提供的广泛服务和解决方案，可以帮助设计人员减少开发时间，并对硬件的首次正确结果有信心。 22FDX® MRAM在125°C时具有出色的20年数据保留期。 GF的22FDX®平台已经实现了45亿美元的设计赢利，芯片出货量超过3.5亿。 使用55LPX和40LP的工业MCU，配有eNVM和28SLP-ESF3GF 55LPX and 40LP with eNVM and 28SLP-ESF3, built on bulk CMOS platforms, are optimized for a range of power-performance MCU applications, including automotive, baseband SoCs, mobile multimedia, digital TVs/STBs, IoT and industrial. The solutions enable designers to leverage logic, analog, RF, ULP SRAM/logic combinations, high-K metal gate technology and high reliability, along with on-board memory for faster wakeup times, reduced system cost and improved security: 55LPx具有高可靠性（汽车级IP）和高密度、低功率SRAM的特点 GF的40LP是业界唯一的40纳米汽车级0产品 当需要为射频和超低功率提供灵活的混合技术选择时，28SLP对功率、性能和芯片成本进行了优化 ESF3 eFlash增加了强大的质量和可靠性，在恶劣的温度条件下提供零故障率。 高电压？没问题。 高电压？没问题。 55LPx解决方案非常适合在30V及以上电压下工作的模拟和功率器件；它为集成模拟、功率和混合信号应用进行了优化，如移动设备的PMIC、音频放大器以及需要密集数字、模拟和功率元件的应用。 When power matter 40LP solutions are ideal for power-sensitive mobile and wireless applications. They feature flexible mixed-technology options for RF and low voltage. 少即是多 与可比的40纳米技术相比，28SLP解决方案的功耗降低了40%，面积减少了50%，成本也大大降低。他们的ULP选项可以提供额外的40%的功率节省。 GF 55LPX and 40LP solutions are in high-volume production and feature world-class D0 (< 0.04 def/in2) defect density. 电源ASSP工业物联网是建立在电力转换和电机控制的基础上的。稳健、高效的电力电子器件正在使未来就绪的工厂成为可能。并非所有的功率MOSFET都适合这些高要求的工业应用。开发用于工艺和电机控制、通信基础设施、CCTV安全和交通监控/信号的功率ASSP的设计工程师需要无与伦比的可靠性和性能，即使是在高电压下。GF的功率ASSP解决方案具有成熟的效率和可靠性，能够满足这些要求。#power-assps 使用55纳米BCDLite®和130纳米BCD/BCDLite®的功率ASSPGlobalFoundries® (GF®) 55 nm BCDLite® and 130 nm BCD/BCDLite® solutions enable designers to harness low-power logic enabled by optimized, low-voltage CMOS. Included are low/medium/high/ very-high-voltage extended drain and laterally double-diffused MOSFET transistors, as well as precision analog passives and non-volatile memory, all enabling robust reliability, significant performance, and voltage-handling and cost benefits. The solutions feature best-in-class power FETs that enable smaller dies and improved power conversion efficiency.Pack power into smaller packagesGF power FETs provide up to 50% reduction in on-resistance versus earlier GF BCDLite processes, enabling, for example, a 30% smaller die for a step-down buck switching regulator application where power FETs occupy ~60% of the die area.Pack a performance punch55 nm BCDLite offers best-in-class Rsp versus BVdss performance for maximum power efficiency and smaller solution size. This is combined with high-density logic that enables advanced integration and area-efficient designs.High reliability, in high volume55 nm BCDLite and 130 nm BCD/BCDLite solutions feature world-class defect density (< 0.04 def/in2) and are in high-volume production, enabling customers to meet market demand at the high reliability that today’s power management products demand. GF高压BCD功率场效应管（40V，最高85V），提供行业领先的性能。 GF是第一个提供55纳米BCD解决方案（55纳米BCDLite）的公司，目前出货量已超过30亿颗IC。 无线连接Wireless communications for industrial IoT hardware must deliver reliable connectivity with low latency to support the increasingly rigorous requirements in applications such as remote sensors with embedded artificial intelligence at the edge. The demands on this hardware keep growing as cellular (NB-IoT/LTE-M) and Wi-Fi connectivity continue to supplement or replace existing wired/Ethernet connections to further enable robotics, automation and intelligent connectivity applications in high-temperature, noisy manufacturing environments.#无线连接 使用22FDX®进行无线连接22FDX® from GFis the industry’s first and only 22 nm fully-depleted silicon-on-insulator solution. It delivers FinFET-like performance and smaller area, at a cost comparable to 28 nm bulk CMOS planar technologies. These benefits, paired with its combination of high-performance RF, high-density digital logic and reliable non-volatile memory features—along with high-voltage transistors and ultra-low dynamic and leakage power—make 22FDX® solutions a perfect fit for industrial IoT applications. IIoT-readyThe isolated channel in 22FDX® reduces capacitance along with thermal and flicker (1/f) noise, enabling high-performance RF transceivers that can reliably receive data over longer distances in noisy industrial environments, without generating excess heat. Additionally, integrated high-voltage devices support high-efficiency RF power amplifiers and power conversion for ultra-reliable, power-efficient wireless connections.Powerful & power-efficient22FDX® adaptive body-bias enables high-density, high-performance digital elements for advanced features like AI at the edge, in a small footprint. Because it can operate at 500 MHz at an extremely low operating voltage (0.4 V Vdd) with < 1 pA/bit SRAM leakage current, 22FDX-based devices can run for years on small, inexpensive batteries, eliminating the need to add factory power cabling.Memory that handles the heat22FDX® MRAM endurance is 20 years at 125°C, well above the top end of the industrial -40 to 105°C standard. This versatile eMRAM technology is designed for code storage and offers customers proven, ultra-efficient embedded non-volatile memory for fast field updates, quick wakeup times and increased security, with faster time to market. 22FDX®实现了高性能模拟、射频和电池PMIC元件与边缘AI的单芯片集成。 22FDX®可以帮助设计者最大限度地延长电池寿命，与28纳米散装CMOS解决方案相比，其功耗可降低70%。
