GTC 2017 and the Future of Technology: Part 1 October 6, 2017By: Dave Lammers When I was flying west to attend the 2017 GLOBALFOUNDRIES Technology Conference, I couldn’t help but think of a trip 10 years earlier, to the 2007 SEMICON West. In the press room there, tech journalist Katherine Derbyshire showed off her brand-new iPhone, and several of us huddled around watching her double-tap, type on the screen, and perform feats of wizardry that were beyond those of us that had mere Blackberries. For several years now, we’ve all been thinking about the future of technology. Will people really turn over their wheels to ADAS cars? Will neural networks learn complex tasks? Will augmented reality become so adept that doctors can offer better diagnoses? And will these capabilities run over 5G wireless networks that run circles around today’s links? There were some answers at the 2017 GTC event in Santa Clara. Just as the 4G wireless rollout delivered users the fast access to the Web that propelled so many new mobile applications – think Uber and others – the still-developing 5G networks will be needed to provide the performance required to spur autonomous driving, cloud-based applications, smart cities, and a host of others. GF’s CEO, Sanjay Jha said, “5G is set to transform all industries, and our customers are already gearing up for the future.” The moniker “5G” will evolve over time, starting out with gigabit-capable versions of the 4G LTE standard and then offering fixed-point and mobile capabilities that go beyond the long-term extension (LTE) roadmap. Jha mentioned the ability to go from today’s megabits-per-second of sustained wireless bandwidth to gigabits-per-second rates, at sub-5 nanosecond latencies. To get there, GF will offer enhanced versions of its RF SOI, SiGe, and FDX technologies. And behind these networks will be new power solutions based on the BCD and BCD Lite offerings. Bami Bastani, senior vice president of the RF business unit, said the 5G networks will need to support two segments, one in the sub-6 GHz realm and a millimeter wave segment that operates at 28 GHz and higher. The 5G networks will include picocells in urban areas for point-to-point transfers, and, eventually, mobile networks with enough robustness to support tomorrow’s automobiles. As 5G networks grapple with millimeter waves, Bastani said “the level of integration increases, and the demands increase on linearity and robustness.” Cristiano Amon, executive vice president of Qualcomm, noted how whole new industries developed, based on the widespread Internet connectivity that the 4G networks supported over the last decade. “The digital economy came of age with the smartphone,” Amon said, and with future economics gains to come from 5G networks, companies such as Qualcomm are “investing heavily” in solving the design challenges that 5G represents. Amon predicted that 5G capabilities would “enter into the PC space, with no separation between the PC and the mobile space.” And he sees China playing a very important part of Qualcomm’s efforts: “There is so much excitement in China in mobile handsets and in advancing the industry to 5G. Partnering with China has been a very important part of Qualcomm’s success,” he said. Ten years from now, as technologists fly to the 2027 GTC event, is there anyone who seriously doubts they will be riding to the venue in ADAS-enabled cars, surfing the Web on 5G-enabled phones, and learning about the newest technologies on augmented-reality systems? All of these things will take time. And patience, by the way, was another noteworthy theme of GTC 2017. Foundries take time to develop, both in terms of technology and their ability to offer EDA tools and IP, to meet customer deadlines and ensure quality. GTC 2017 was in effect a statement that GF has matured into a reliable manufacturing partner. In 2017, as AMD’s chief technology officer and senior vice president Mark Papermaster said at the GTC event, AMD has seen great success with a newly designed lineup of processors and graphics solutions, created in a partnership with the 14nm FinFET technology ramped successfully at GF’s Malta, N.Y. fab. And executives from Skyworks and Qorvo also took the stage at GTC 2017 to say that they have succeeded by partnering with GF in the wireless space as well. Those success stories are good indicators that future successes are in store, for GF and for all of us. About Author Dave Lammers Dave Lammers is a contributing writer for Solid State Technology and a contributing blogger for GF’s Foundry Files. Dave started writing about the semiconductor industry while working at the Associated Press Tokyo bureau in the early 1980s, a time of rapid growth for the industry. He joined E.E. Times in 1985, covering Japan, Korea, and Taiwan for the next 14 years while based in Tokyo. In 1998 Dave, his wife Mieko, and their four children moved to Austin to set up a Texas bureau for E.E. Times. A graduate of the University of Notre Dame, Dave received a master’s in journalism at the University of Missouri School of Journalism.
New 8SW RF SOI Platform Leads the Industry October 2, 2017By: Shankaran Janardhanan The world’s first mainstream RF SOI foundry platform manufactured on 300mm wafers offers an unmatched combination of best-in-class performance, cost effectiveness and flexibility GF recently announced some exciting news for designers of RF front end modules. At our flagship annual technology conference, GTC, we unveiled a 300mm RF SOI platform for 4G LTE and sub-6 GHz mobile/wireless applications, which we are calling 8SW. It offers impressive technical specifications and gives our customers unbeatable economic and time-to-market advantages. But actually, those aren’t its only noteworthy features. What’s also noteworthy is the fact that it is a tangible result of something intangible by nature but vitally important nonetheless – the unique relationships, mutual respect and deep trust we and our customers share. In a nutshell, we couldn’t have developed it without the support and close working relationships we have with our customers. With the acquisition of IBM’s Microelectronics business, GF not only gained deep technical knowledge in RF but it has fostered and built upon a legacy of customer intimacy. The result is a new chip-manufacturing technology with a comprehensive set of advanced features that gives customers exactly what they need the most. Our new 8SW RF-SOI platform provides an unparalleled combination of best-in-class performance, cost effectiveness and the flexibility needed to build chips for the complex front-end modules (FEMs) required by rapidly evolving mobile/wireless communication applications. It’s not only the best combination of switching, LNA (low-noise amplifier) and logic capabilities on the market, but as a 300mm RF SOI process it uses larger wafers and more sophisticated tooling, bringing compelling economic, design and time-to-market advantages. It also features all-copper interconnect for more current-carrying capacity and efficiency. The new 8SW platform features switching speeds of sub 85fs, which is about 25 percent faster than our existing 200mm RF-SOI process. For LNAs, it offers peak fMAX of more than 250GHz. Logic circuitry is extremely dense and can operate at either 1.2V or 1.8V, with a power reduction of more than 70 percent versus the previous platform. Source: Adapted from The5th Generation Mobile Wireless Networks In addition, overall die size can be as much as 20 percent smaller. Combined with the fact that 300mm wafers are larger and yield more chips, the result is that the new 8SW process enables much more cost-efficient and faster design/development cycles because there is more wafer area available to use for test sites, design variations and multiple simultaneous projects. Time-to-market is also increased because 300mm production tools reduce variability by more than 30 percent versus the 200mm process. Working Closely With Customers In developing the 8SW RF SOI platform, we’ve taken dual product- and customer-centric approaches. We worked closely with customers because we needed to understand their detailed knowledge of application requirements as we developed the 8SW platform. One example of this approach was our recognition of the need to focus our development efforts on continuously improving LNA performance as signals come out of transceiver and move into the front end modules. This focus was a direct result of our close work with customer design teams to ensure the 8SW platform would meet rapidly developing advanced 4G LTE requirements. The new 8SW platform is manufactured at GF’s 300mm production line in East Fishkill, NY, providing customers with ample capacity because it leverages a partially-depleted SOI technology base that has been in high-volume production since 2008. About Author Shankaran Janardhanan Shankaran, GF’s Director of Product Line Management for RF, has made many contributions to the technical development and business success of RF products over his entire career. In his current role he has global product responsibility for GLOBALFOUNDRIES’ industry-leading portfolio of RF solutions. He was previously GF’s manager of RF business development and field applications. Before that he was at TowerJazz, where he had various roles in design engineering, technology and product management for RF and MEMS products, and where he managed the design support function. He has an M.B.A. from University of California–Berkeley and an M.S. in electrical engineering from Temple University.
格芯推出面向下一代移动和5G应用的8SW RF-SOI技术 September 29, 2017先进的8SW 300毫米SOI技术，可以为移动4G LTE以及6GHz以下的5G应用开发成本优化、高性能的射频前端模块 中国， 上海 2017年9月29日—格芯(GLOBALFOUNDRIES)今天宣布推出业内首个基于300毫米晶圆的RF SOI代工解决方案。8SW SOI技术是格芯最先进的RF SOI技术，可以为4G LTE以及6GHz以下5G移动和无线通信应用的前端模块（FEM）带来显著的性能、集成和面积优势。 格芯全新的低成本、低功耗、高度灵活8SW的解决方案可以在300毫米生产线上制造具有出色开关性能、低噪声放大器（LNA）和逻辑处理能力的产品。与上一代产品相比，该技术可以将功耗降低至70%，实现更高的电压处理能力，并实现同类最佳的开启电阻（Ron）和关闭电容（Coff），从而通过高隔离减少插入损耗，同时借助全铜互连提升功耗处理能力。 “Skyworks继续借助我们全面的专业系统知识，为全球客户提供高度定制的解决方案。” Skyworks先进移动解决方案副总裁兼总经理Joel King 表示，“通过与格芯合作，Skyworks能够尽早使用同类最佳的开关和低噪声放大器技术，从而进一步为下一代移动设备和不断发展的物联网应用推动射频前端技术的发展。” “我们现在生活在一个智能互联的时代，人们希望并且需要通过无缝、可靠的方式实现随时随地的数据连通。” 格芯射频业务部门高级副总裁Bami Bastani表示，“不过要实现这个目标的难度越来越大，因为前端设备必须能够处理越来越多的频段和射频信号类型，并具备集成数字处理和控制功能。作为射频行业的领军者，我们专门开发了新型8SW工艺，以满足客户最迫切的需求。” 基于300毫米RF-SOI的技术可以为设计人员提供一个成本优化的平台， 实现性能、集成和功耗的最佳组合方案，并拥有强大的数字集成能力。格芯的8SW技术采用了专门的衬底优化方案，能够最大限度增加无源器件的品质因数，减少有源电路的寄生电容，并最小化在千兆频段以下运行的器件相位差异和电压摆幅。该技术可以使优化后的低噪声放大器达到一流的噪声属性以及高特征频率与最高振荡频率，从而帮助目前采用4G频率以及未来采用6GHz以下频率的5G前端模块实现多样的接收和主天线路径低噪声放大器应用。 先进的8SW技术产品在位于纽约州东菲什基尔的300毫米晶圆厂生产线生产，其产能可以较低的成本满足业界预期的市场需求。工艺设计工具包现已发布。 如果希望进一步了解格芯RF SOI技术解决方案，请联系您的格芯销售代表，或访问www.globalfoundries.com/cn。 关于格芯 格芯是全球领先的全方位服务半导体代工厂，为世界上最富有灵感的科技公司提供独一无二的设计、开发和制造服务。伴随着全球生产基地横跨三大洲的发展步伐，格芯促生了改变行业的技术和系统的出现，并赋予了客户塑造市场的力量。格芯由阿布扎比穆巴达拉投资公司（Mubadala Investment Company）所有。欲了解更多信息，请访问 https://www.globalfoundries.com/cn。 媒体垂询： 杨颖（Jessie Yang） (021) 8029 6826 [email protected] 关慧珠 （Sunny Guan） 86 13564132717 [email protected] 邢芳洁（Jay Xing） 86 18801624170 [email protected] 范怡唯（Yiwei Fan） 86 13585713665 [email protected]
格芯公布针对下一代5G应用的愿景和路线图 September 29, 2017技术平台的独特定位开启“互联智能”向5G过渡的全新时代 中国，上海 2017年9月29日 — 格芯（GLOBALFOUNDRIES）今天公布了针对一系列技术平台而制订的愿景和路线图，这些技术平台旨在帮助客户过渡到下一代5G无线网络。格芯为多种5G应用领域提供业内范围最广的技术解决方案，所针对的应用包括集成毫米波前端模块（FEM）、收发器、基带芯片、以及用于移动和网络的高性能应用处理器。 随着全球对数字信息的依赖程度越来越高，互联技术有望推动市场迅猛发展，预计到2020年，互联设备数量会达到84亿。5G技术将成为推动网络发展，实现人与联网机器零距离连通的关键因素。5G技术无处不在的连通，令人难以置信的吞吐量和极快的运行速度让各种应用系统充分利用云的处理能力。 “格芯公司期望从4G到5G的过渡，其变革程度不亚于从语音过渡到数据。” 格芯公司CEO 桑杰·贾（Sanjay Jha） 表示，“5G将改变所有行业，而我们的客户早已蓄势待发。因此，我们以丰富的技术组合方案不断推动前沿技术的发展，从而满足客户的应用需求，为5G等变革技术实现智能互联。” “5G技术的愿景是实现极其可靠的通信，达到高数据吞吐能力，高用户密度，以及不到5毫秒的网络延迟，” Linley集团的首席分析师Linley Gwennap表示，“格芯公司拥有广泛的产品组合和丰富的经验，能够很好地满足这些网络的需求，帮助其完成从设备一直到数据中心之间所有环节的过渡，从而支持5G应用。” 格芯在市场上推出了众多具有差异化的解决方案，以满足5G应用的性能标准。公司的技术路线图中包括RF-SOI、硅锗（SiGe）、RF CMOS以及先进CMOS节点技术，同时还结合了多种专用集成电路（ASIC）设计服务和IP。 格芯的5G端到端解决方案 格芯的5G解决方案是其开发和提供下一代技术的总体愿景的一部分，下一代技术旨在为下一代设备、网络和有线/无线系统实现互联智能。这些用于特定应用程序的解决方案通过支持多种多样的功能来为客户提供满意的5G解决方案，其中包括超低功耗传感器、具有长电池寿命的超快设备、以及支持片上存储器的更高层集成功能等。 · 5G毫米波前端模块：格芯的RF-SOI和SiGe解决方案（130纳米-45纳米）为前端模块和集成功率放大器（PA）应用提供了最佳的性能、集成和功耗组合方案。格芯的毫米波解决方案设计运行在毫米波和亚6GHz频段之间而，额外毫米波段也包括在公司的路线图中。客户现在可以开始优化芯片设计方案，从而开发出高性能5G和毫米波相控阵列应用的射频前端差异化解决方案。 · 5G毫米波收发器和基带处理：格芯的FDX技术（22纳米和12纳米）通过将射频、模数转换器（ADC）、数字基带和存储器集成在同一芯片上，为5G收发器提供功耗最低和面积最小的解决方案。此外还有通过独特的背栅偏压功能实现新型架构和可重构操作的功能。这些优化的解决方案为客户提供了一种灵活、成本优化的方法，将毫米波收发器和基带处理集成在5G基站、卫星、雷达和其它高性能应用中。格芯及其全球合作伙伴将在2018年推出用于毫米波的FDX产品。 · 先进应用处理：格芯基于CMOS FinFET工艺的先进处理技术兼有众多优点，为下一代智能手机处理器、低延迟网络以及大型多输入输出（MIMO）网络提供了最佳的性能、集成、和功耗组合方案。目前，格芯已提供该解决方案。 · 针对5G无线基站的定制设计：公司的专用集成电路（ASIC）设计系统（FX-14和FX-7）通过支持高速SerDes上的无线基础架构协议，从而实现优化的5G解决方案（功能模块），这些解决方案能够将先进的封装、单片、模数/数模转换器（ADC/DAC）与可编程逻辑集成在一起。5G解决方案包括支持CPRI、JESD204C标准的32G背板和32G短距SerDes。此外还提供毫米波功能的模数/数模转换器以及数字前端（DFE）的先进封装解决方案，比如2.5D与MCM。FX-14现在已经向用户提供，FX-7预计在2019年量产。 格芯及其全球合作伙伴可为客户提供这些5G解决方案。格芯目前正与客户一起部署未来几年的原型系统开发工作。 在射频领域绝对的领导地位 格芯在RF-SOI以及SiGe工艺方面拥有非常丰富的经验，凭借其丰富的生产经验，以及对下一代射频通信架构的专业认知，至今，格芯已经向客户交付了超过320亿片RF-SOI芯片和超过50亿片硅锗芯片。 为了满足全球范围内对5G解决方案日益增长的需求，格芯正在对位于东菲什基尔的300毫米晶圆厂进行产能升级， 并增加位于新加坡的200毫米晶圆厂的产能，以生产业内领先的RF-SOI产品。 Anokiwave “5G毫米波市场所面临的主要挑战的关键就是了解生产具有商业可行性的相控阵列天线的方法。我们相信：借助格芯在RF-SOI以及SiGe技术领域的领导地位，Anokiwave能够开发独具特色的毫米波解决方案，从而迎接毫米波5G网络的工业化时代。” Ankoiwave 公司首席执行官Robert Donahue Peregrine “在过去将近三十年的时间内，Peregrine半导体公司的UltraCMOS®技术平台一直处于RF-SOI技术领域的最前沿。2013年之后，与格芯的合作进一步推动了Peregrine公司RF-SOI技术发展。在5G时代即将来临的背景下，Peregrine公司很高兴看到格芯推出5G路线图，并为Peregrine高度集成的5G解决方案提供支持。” Peregrine半导体公司首席技术官Jim Cable Qualcomm “多年来，格芯与Qualcomm Technologies建立了跨越多种工艺节点的紧密的代工关系。对5G将为业界带来的一切我们倍感兴奋，并期待它的长足发展。”为Qualcomm Technologies, Inc.执行副总裁兼QCT总裁克里斯蒂安诺·阿蒙 Skyworks “随着我们客户对移动体验的需求越来越强烈，他们比以往更加需要强大的制造合作方。我们很高兴能有格芯这样的合作伙伴来为我们提供技术，从而使我们可以推出从移动互联、无线基础架构到物联网等面向5G市场的功能强大、面向未来的射频解决方案。” Skyworks解决方案公司首席技术官Peter Gammel 关于格芯 格芯是全球领先的全方位服务半导体代工厂，为世界上最富有灵感的科技公司提供独一无二的设计、开发和制造服务。伴随着全球生产基地横跨三大洲的发展步伐，格芯促生了改变行业的技术和系统的出现，并赋予了客户塑造市场的力量。格芯由阿布扎比穆巴达拉投资公司（Mubadala Investment Company）所有。欲了解更多信息，请访问 https://www.globalfoundries.com/cn。 媒体垂询： 杨颖（Jessie Yang） (021) 8029 6826 [email protected] 关慧珠 （Sunny Guan） 86 13564132717 [email protected] 邢芳洁（Jay Xing） 86 18801624170 [email protected] 范怡唯（Yiwei Fan） 86 13585713665 [email protected]
格芯发布为IBM系统定制的14纳米FinFET技术 September 26, 2017共同开发的14HP工艺是全球唯一同时采用FinFET和SOI的技术 中国，上海，2017年9月26日 – 格芯(GLOBALFOUNDRIES)正在提供其为IBM的下一代服务器系统处理器定制的量产14纳米高性能（HP）技术。这项双方共同开发的工艺专为IBM提供所需的超高性能和数据处理能力，从而在大数据和认知计算的时代为IBM的云、商业和企业解决方案提供支持。IBM在9月13日宣布推出IBM Z产品。 14HP是业内唯一将三维FinFET晶体管架构结合在SOI衬底上的技术。该技术采用了17层金属层结构，每个芯片上有80多亿个晶体管，通过嵌入式动态随机存储器（DRAM）以及其它创新功能，达到比前代产品更高的性能、更低的能耗、以及更好的面积缩微效果，从而能够满足广泛的深度计算工作量的需求。 14HP技术助力IBM最新z14主机的处理器。其基础的半导体工艺可使IBM客户顺利完成海量的大容量处理任务，利用机器学习功能处理其最具价值的数据，并通过快速获得可执行的见解以做出智能决策——并同时提供全面加密实现的极致数据保护。 “格芯一直是我们开发定制半导体技术的战略合作伙伴，他们能够使我们最新的服务器系统处理器满足严格的要求。”IBM Z 总经理Ross Mauri 表示，“我们很高兴能在IBM Z产品线中采用14HP技术。” “格芯和IBM在开发和制造超高性能SOI芯片方面都具有丰富的经验，”格芯全球销售和业务发展高级副总裁Mike Cadigan表示，“新一代的14HP处理器是双方工程团队通过密切协作，满足新一代服务器系统需求的又一有力证明。” “14HP技术借鉴了我们位于纽约州萨拉托加县的Fab 8在14纳米FinFET技术领域所积累的丰富经验。”格芯公司高级副总裁兼Fab 8总经理Tom Caulfield表示，“我们目前已经开始大量生产涉及多种应用领域的客户产品。我们成熟、多样的制造能力会帮助IBM将最新的处理器投放到市场，为其众多客户服务。” 关于格芯 格芯是全球领先的全方位服务半导体代工厂，为世界上最富有灵感的科技公司提供独一无二的设计、开发和制造服务。伴随着全球生产基地横跨三大洲的发展步伐，格芯促生了改变行业的技术和系统的出现，并赋予了客户塑造市场的力量。格芯由阿布扎比穆巴达拉投资公司（Mubadala Investment Company）所有。欲了解更多信息，请访问https://www.globalfoundries.com/cn。 媒体垂询： 杨颖（Jessie Yang） (021) 8029 6826 [email protected] 关慧珠（Sunny Guan） 86 13564132717 [email protected] 邢芳洁（Jay Xing） 86 18801624170 [email protected] 范怡唯（Yiwei Fan） 86 13585713665 [email protected]
格芯发布基于领先的FDX™ FD-SOI技术平台的毫米波和射频/模拟解决方案 September 26, 2017技术解决方案，为下一代高容量无线和物联网应用实现低功耗、低成本的“智能互联” 中国，上海，2017年9月26日 — 格芯（GLOBALFOUNDRIES）今日宣布推出面向下一代无线和物联网芯片的射频/模拟PDK（22FDX®-rfa）解决方案，以及面向5G、汽车雷达、WiGig、卫星通信以及无线回传等新兴高容量应用的毫米波PDK（22FDX®-mmWave）解决方案。 该两种解决方案都基于格芯的22纳米FD-SOI平台，该平台将高性能射频、毫米波和高密度数字技术结合，为集成单芯片系统解决方案提供支持。该技术在低电流密度和高电流密度的应用中都可以实现最高特征频率和最高振荡频率，适用于对性能和功耗都有超高要求的应用，例如LTE-A、窄带物联网与5G蜂窝收发器、GPS WiFi与WiGig集成芯片、以及各种采用集成eMRAM技术的物联网和汽车雷达应用等。 “随着客户不断推动智能互联设备的领域，格芯也不断推出差异化的FDX系列产品，助力客户的创新，”格芯CMOS业务部门高级副总裁Gregg Bartlett 表示，“日新月异的主流移动和物联网市场要求射频和模拟技术不断创新发展。格芯的22FDX-rfa整合了卓越的射频和模拟功能，有助于开发兼具功耗、性能和成本优势的差异化移动和物联网产品。针对新兴的毫米波市场，格芯的22FDX-mmWave技术可实现无与伦比的毫米波性能，为客户交付差异化的相控阵波束成型以及其它拥有最低功耗、最高性能与集成度的毫米波系统解决方案。” 格芯优化了22FDX射频与毫米波产品，从而能够为诸如单片系统窄带物联网以及5G毫米波束成型相控阵系统等领先的连接应用提供高性能天线开关与功率放大器集成解决方案。 作为FinFET技术之外的选择，22FDX-rfa不仅能够整合这些前端模块组件，而且与FinFET相比，还可以降低热噪声并达到相同的自增益放大效果，同时其自增益至少为体硅的两倍。同时，射频性能也更为出色，且FD-SOI技术本身所具有特征还进一步减少了30%的浸没式光刻层。 面向先进射频和模拟毫米波以及嵌入式非易失内存解决方案的工艺设计工具包现已发布，可以供客户进行原型设计。客户如果希望进一步了解格芯的22FDX射频与模拟解决方案，请联系您的格芯销售代表，或访问网站：www.globalfoundries.com/cn。 关于格芯 格芯是全球领先的全方位服务半导体代工厂，为世界上最富有灵感的科技公司提供独一无二的设计、开发和制造服务。伴随着全球生产基地横跨三大洲的发展步伐，格芯促生了改变行业的技术和系统的出现，并赋予了客户塑造市场的力量。格芯由阿布扎比穆巴达拉投资公司（MubadalaInvestment Company）所有。欲了解更多信息，请访问https://www.globalfoundries.com/cn。 媒体垂询： 杨颖（Jessie Yang） (021) 8029 6826 [email protected] 关慧珠（Sunny Guan） 86 13564132717 [email protected] 邢芳洁（Jay Xing） 86 18801624170 [email protected] 范怡唯（Yiwei Fan） 86 13585713665 [email protected]
格芯宣布推出基于行业领先的22FDX® FD-SOI 平台的嵌入式磁性随机存储器 September 25, 2017先进的嵌入式非易失内存解决方案在22纳米工艺节点上扩展片上系统（SoC）性能，实现“智能互联” 中国，上海（2017年9月25日）——格芯(GLOBALFOUNDRIES)今日宣布推出基于公司22纳米 FD-SOI (22FDX®)平台的可微缩嵌入式磁性随机存储器（eMRAM）技术。作为业界最先进的嵌入式内存解决方案，格芯22FDX eMRAM，为消费领域、工业控制器、数据中心、物联网及汽车等广泛应用提供优越的性能和卓越可靠性。 正如近期在美国所展示的，格芯22FDX eMRAM具有业界领先的存储单元尺寸，拥有在260°C回流焊中保留数据的能力，同时能使数据在125°C环境下保留10年以上。这项行业领先的技术优势使其能够被用于通用、工业和汽车领域的微控制器单元(MCU)。FDXTM和eMRAM的能效连同射频连接功能和毫米波IP，使得22FDX成为电池驱动的物联网和自动驾驶汽车雷达片上系统(SoCs)的理想平台。 “随着越来越多的应用需要高性能、非易失性的内存解决方案，客户都在设法扩展产品的能力。”格芯eMRAM事业部副总裁Dave Eggleston表示，“我们很高兴能发布22FDX eMRAM。作为一种具有卓越可靠性的嵌入式内存技术，它能够为系统设计者在微控制器（MCUs）和片上系统（SoCs）中提供更多功能，同时提高其性能和能效。” 格芯eMRAM的高可靠性和可扩展性使其在多个市场的先进工艺节点上都是一个成本优化的选择。此外，格芯eMRAM的多功能性让其能同时兼备快写性能与高持久性，这也使得它能同时被用于代码存储和工作存储。这一22FDX eMRAM的推出是格芯与Everspin 科技公司多年合作的成果。目前，1Gb容量的双倍速率MRAM芯片已进行了演示并提供样片，256Mb容量的双倍速率MRAM芯片已量产，并由Everspin独家供货。 22FDX eMRAM和射频解决方案的工艺设计工具包现已发布。面向22FDX eMRAM客户样片的多项目晶圆(MPWs)正在如期进行中，并将在2018年第一季度交付，且计划于2018年底进行风险量产。格芯及其设计合作伙伴已推出eMRAM定制设计服务，包括从2Mb到32Mb容量的eMRAM，并提供设计便捷的嵌入式闪存（eFlash）和静态随机存储器（SRAM）接口选项。 有兴趣了解更多关于格芯22FDX eMRAM解决方案的客户可以联系格芯销售代表或登录网站www.globalfoundries.com/cn。 关于格芯 格芯是全球领先的全方位服务半导体代工厂，为世界上最富有灵感的科技公司提供独一无二的设计、开发和制造服务。伴随着全球生产基地横跨三大洲的发展步伐，格芯促生了改变行业的技术和系统的出现，并赋予了客户塑造市场的力量。格芯由阿布扎比穆巴达拉投资公司（Mubadala Investment Company）所有。欲了解更多信息，请访问 https://www.globalfoundries.com/cn。 媒体垂询： 杨颖（Jessie Yang） (021) 8029 6826 [email protected] 关慧珠 （Sunny Guan） 86 13564132717 [email protected] 邢芳洁（Jay Xing） 86 18801624170 [email protected] 范怡唯（Yiwei Fan） 86 13585713665 [email protected]
格芯为高性能应用推出全新12纳米 FinFET技术 September 25, 2017全新12LP技术改善了当前代产品的密度和性能 平台增强了下一代汽车电子及射频/模拟应用的性能 中国上海（2017年9月25日）——格芯(GLOBALFOUNDRIES)今日宣布计划推出全新12纳米领先性能(12LP)的FinFET半导体制造工艺。该技术预计将提高当前代14纳米 FinFET产品的密度和性能，同时满足从人工智能、虚拟现实到高端智能手机、网络基础设施等最具计算密集型处理需求的应用。 这项全新的12LP技术与当前市场上的16 /14纳米 FinFET解决方案相比，电路密度提高了15%，性能提升超过10%。这表明12LP完全可与其它晶圆厂的12纳米 FinFET产品竞争。这项技术利用了格芯在纽约萨拉托加县Fab 8的专业技术，该工厂自2016年初以来，一直在大规模量产格芯的14纳米 FinFET平台。 “世界正在处于向智能互联时代转型之中，这是一个前所未有的趋势。”格芯首席执行官桑杰·贾（Sanjay Jha）表示，“全新的12LP技术以更高的性能和密度帮助我们的客户在系统层面上继续创新，包括实时连接以及从高端图像处理、汽车电子到工业应用等边缘处理。” “我们很高兴能进一步拓展与格芯长期以来的合作关系，成为他们全新12LP技术的主要客户，” AMD首席技术官及技术与工程高级副总裁Mark Papermaster表示，“2017年，得力于我们与格芯的深度合作，AMD使用14纳米 FinFET技术将一系列领先的高性能产品推向市场。我们很高兴能与格芯在全新12LP工艺技术上进行合作，这也是我们加速产品和技术发展的一部分。” 除了晶体管级的增强，12LP平台还将包括专为业内增长最快的两个领域——汽车电子和射频/模拟应用而设计的面向市场的全新功能。 · 汽车安全和自动驾驶方面的新兴汽车应用对于处理功耗和极致可靠性都有极高要求。12LP平台兼具这两种功能，并计划于2017年第四季度在Fab 8进行汽车二级资格认证。 · 新射频特性拓展了12LP平台在6GHz以下无线网络中的高级收发器等射频/模拟应用。12LP为以数字逻辑为主，射频/模拟内容较少的射频芯片架构提供最佳逻辑和内存微缩。 格芯的全新12纳米 FinFET技术是现有12纳米FD-SOI产品12FDXTM的补充。虽然有些应用要求FinFET晶体管的卓越性能，但许多连接设备需要高度的集成，以及更灵活的性能和功耗，而这是FinFET无法实现的。12FDX为下一代智能互联系统提供了一种替代路径，实现了10纳米 FinFET的性能，且比当前代FinFET产品功耗更低，成本更低，射频集成更优。 关于格芯 格芯是全球领先的全方位服务半导体代工厂，为世界上最富有灵感的科技公司提供独一无二的设计、开发和制造服务。伴随着全球生产基地横跨三大洲的发展步伐，格芯促生了改变行业的技术和系统的出现，并赋予了客户塑造市场的力量。格芯由阿布扎比穆巴达拉投资公司（Mubadala Investment Company）所有。欲了解更多信息，请访问 https://www.globalfoundries.com/cn。 媒体垂询： 杨颖（Jessie Yang） (021) 8029 6826 [email protected] 关慧珠 （Sunny Guan） 86 13564132717 [email protected] 邢芳洁（Jay Xing） 86 18801624170 [email protected] 范怡唯（Yiwei Fan） 86 13585713665 [email protected]
GLOBALFOUNDRIES Delivers 8SW RF SOI Technology for Next-Generation Mobile and 5G Applications September 20, 2017Advanced 8SW 300mm SOI technology enables cost-effective, high-performance RF front-end modules for 4G LTE mobile and sub-6GHz 5G applications Santa Clara, Calif., Sept. 20, 2017 — GLOBALFOUNDRIES today announced the availability of the industry’s first RF SOI foundry solution manufactured on 300mm wafers. The company’s most advanced RF SOI technology, 8SW SOI, delivers significant performance, integration and area advantages in front-end modules (FEMs) for 4G LTE and sub-6 GHz 5G mobile and wireless communication applications. GF’s new 8SW technology offers a low cost, low power, highly flexible solution with superior switching, low-noise amplifiers (LNA) and logic processing capabilities on a 300mm manufacturing line. The technology features up to 70 percent power reduction compared to the previous generation, with higher voltage handling, a best-in-class on-resistance (Ron) and off-capacitance (Coff) for reduced insertion loss with high isolation, and an all-copper interconnect that improves power-handling capacity. “Skyworks continues to leverage our broad systems expertise to bring highly customized solutions to customers worldwide,” said Joel King, vice president and general manager of Advanced Mobile Solutions for Skyworks. “Our collaboration with GF has provided Skyworks early access to best-in-class switch and LNA technology that will further advance RF front-ends for next-generation mobile devices and evolving IoT applications.” “We now live in a world of connected intelligence where people expect and demand seamless, reliable data connectivity everywhere,” said Bami Bastani, senior vice president of GF’S RF Business Unit. “But that’s only getting more difficult to achieve, as front-ends increasingly must be able to handle many different frequency bands and many different types of RF signals, along with integrated digital processing and control. As the industry leader in RF, we have developed the new 8SW process specifically to help customers meet their most pressing needs.” The 300mm RF silicon-on-insulator (SOI) based technology gives designers a cost-effective platform with an optimal combination of performance, integration and power efficiency with greater digital integration ability. GF’s 8SW technology incorporates a specialized substrate optimization that maximizes the quality factor for passive devices, reduces parasitic capacitances for active circuits and minimizes the disparity in phase and voltage swing for devices operating in the sub-GHz frequency range. The technology showcases an optimized LNA with leadership noise figure and high ft/fmax supporting diversity receive and main antenna path LNA applications for today’s 4G operating frequencies and future sub-6GHz 5G FEMs. The advanced 8SW technology is manufactured on GF’s 300mm production line at Fab 10 in East Fishkill, N.Y. and provides the industry with manufacturing capacity to meet the expected market demand at a lower cost. Process design kits are available now. For more information on GF’s RF SOI solutions, contact your GLOBALFOUNDRIES sales representative or go to www.globalfoundries.com. About GF: GLOBALFOUNDRIES is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GLOBALFOUNDRIES makes possible the technologies and systems that transform industries and give customers the power to shape their markets. GLOBALFOUNDRIES is owned by Mubadala Investment Company. For more information, visit https://www.globalfoundries.com. Contacts: Erica McGillGLOBALFOUNDRIES(518) 795-5240[email protected]
GLOBALFOUNDRIES Delivers Custom 14nm FinFET Technology for IBM Systems September 20, 2017Jointly developed 14HP process is world’s only technology that leverages both FinFET and SOI Santa Clara, Calif., Sept. 20, 2017 – GLOBALFOUNDRIES is now delivering in volume its 14nm High Performance (HP) technology that will enable IBM’s next-generation of processors for server systems. The jointly developed 14HP process is specifically designed to deliver the ultra-high performance and data-processing capacity IBM needs to support its cloud, commerce, and enterprise solutions in the era of big data and cognitive computing. IBM announced general availability of the IBM Z on September 13. 14HP is the industry’s only technology to integrate a three-dimensional FinFET transistor architecture on a silicon-on-insulator (SOI) substrate. Featuring a 17-layer metal stack and more than eight billion transistors per chip, the technology leverages embedded DRAM and other innovative features to deliver higher performance, reduced energy, and better area scaling over previous generations to address a wide range of deep computing workloads. The 14HP technology powers the processors that run IBM’s latest z14 mainframes. The underlying semiconductor process allows IBM customers to enable massive transaction scale of high-volume workloads, apply machine learning to their most valuable data, and rapidly derive actionable insights to enable intelligent decisions—all while delivering pervasive encryption that provides the ultimate in data protection. “GlobalFoundries has been a strategic partner in the development of a custom semiconductor technology to enable the aggressive requirements of the processors for our newest server systems,” said Ross Mauri, general manager, IBM Z. “We are excited to bring this 14HP technology to our IBM Z product line.” “GF and IBM together have an unmatched heritage of developing and manufacturing ultra-high performance SOI chips,” said Mike Cadigan, senior vice president of global sales and business development at GF. “This new generation of 14HP processors is another example of the close collaboration between our engineering teams to meet the demands of a new generation of server systems.” “The 14HP technology leverages the proven 14nm FinFET high-volume experience of our Fab 8 facility in Saratoga County, N.Y.,” said Tom Caulfield, senior vice president and general manager of GF’s Fab 8. “We are in high volume production with a broad set of customer designs across a range of applications. Our mature and diverse manufacturing capability will enable IBM to bring its latest processor designs to market to service their broad customer base.” About GF: GLOBALFOUNDRIES is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GLOBALFOUNDRIES makes possible the technologies and systems that transform industries and give customers the power to shape their markets. GLOBALFOUNDRIES is owned by Mubadala Investment Company. For more information, visit https://www.globalfoundries.com. Contacts: Erica McGillGF(518) 795-4250[email protected]
