22FDX®RF & 22FDX®RF+Superior performance with highest level of integration & up to 20 dBm Psat (with power combiners) for premium 5G mmWave smartphones#22fdx®rf-&-22fdx®rf+ Integrated 5G mmWave cellular FEMs & TRXs using 22FDX® RF and 22FDX® RF+22FDX® RF and 22FDX® RF+ enable the integration of low noise amplifiers (LNAs), power amplifiers (PAs) and switches with the transceiver (TRX). Designers can take advantage of a highly integrated or single-chip mmWave radio architecture that incorporates critical RF elements for 5G mmWave mobile devices and that delivers the superior RF performance and power efficiency their applications demand, in a streamlined footprint that can help reduce system bill of material costs. Two of top three 5G mmWave FEM design companies are designing with 22FDX® RF.* 22FDX® RF & 22FDX® RF+ are the industry’s only solutions enabling world-class power and performance benefits in a single-chip 5G mmWave FEM SoC. 22FDX® RF+ extends GF 5G leadership by offering 30% better Ron*Coff and insertion loss performance, enabling stronger, more reliable connections.† Integrated 5G mmWave cellular FEMs & TRXs using 22FDX® RF and 22FDX® RF+ Next-level designs22FDX® RF and RF+ offer up to a 40% logic scaling advantage‡ and are the industry’s only solutions that enable fully integrated 5G mmWave SoCs with best-in-class performance and power benefits, so you can leverage the saved space to add other advanced features. Powerful without being power hungry22FDX® RF and RF+ support up to 10% longer battery life‡ with PAs that deliver a combination of performance, power and thermal efficiency advantages. Remarkable reach22FDX® RF and RF+ provide noise figure and switch insertion loss benefits that help boost signal quality and extend signal reach up to 6% for fewer dropped connections and better sounding calls.◊ Featured Resource Integrated 5G mmWave mobile FEMs/TRXs using 22FDX® RF and 22FDX RF+ * Current estimate based on design win pipeline.‡ Compared to GF 28 nm bulk CMOS. Benefits will vary with chip/system design.† Compared to 22FDX® RF.◊ Assumes 28 GHz band, TX and RX antenna gain of 20 dB, line of sight communication. Benefits will vary with chip/system design. 45RFSOISuperior performance with high Psat (up to 23 dBm) for premium 5G mmWave smartphones#45rfsoi 5G mmWave cellular FEMs using 45RFSOI45RFSOI combines high transmission power capabilities with industry-leading mmWave performance and reliability for beamformers and integrable low-noise amplifiers (LNAs), power amplifiers (PAs) and switches in 5G mmWave cellular front-end module (FEM) applications. More than one billion dollars in 45RFSOI design wins to date.* Industry’s only Foundry with in-house mmWave test capabilities, which build on two decades of RF leadership & expertise. 5G mmWave cellular FEMs using 45RFSOI Power, with staying power45RFSOI-based PAs deliver the high power gain and efficiency—up to 23 dBm Psat at > 40% PAE‡—to extend battery life, and offer reliability of up to 10-year operation. Design flexibility45RSOI lets you integrate multiple RF elements into mmWave FEMs that have superior transmission power—or develop beamformers that use fewer chips for smaller, more cost-effective arrays. Made for mmWave45RFSOI offers an optimized BEOL and high-resistivity substrate combined with device stacking and low Ron advantages for high-quality connectivity at mmWave frequencies. 7SW RF SOIGreat performance for entry & mid-tier 4G LTE and 5G sub-6 GHz smartphones, smart watches & other connected mobile devices#7sw-rf-soi 5G sub-6 GHz & 4G LTE cellular FEMs using 7SW RF SOI7SW RF SOI is an established solution in the GF RF SOI portfolio and qualified in multiple, globally distributed fabs to help ensure worry-free supply. It is optimized for 5G sub-6 GHz and 4G LTE FEM switch and low noise amplifier (LNA) applications. With billions of chips already shipped to industry-leading FEM IC companies, 7SW offers great performance for entry and mid-tier smartphones, smart watches and other connected mobile devices. 5G sub-6 GHz & 4G LTE cellular FEMs using 7SW RF SOI Continued Design flexibility7SW delivers excellent linearity combined with options that allow designers to make critical Ron*Coff vs. power handling trade-offs to meet design performance goals. Keep your battery aliveFeaturing low-leakage logic libraries and high Vt FETs that minimize standby power consumption, 7SW is designed to help you get most out of each battery charge. Reliable connectivityFeaturing LNA-optimized transistors and dual oxide and trap rich substrate options, 7SW offers LNA performance and noise suppression benefits to minimize disconnects and extend reception range. * Based on revenue TAM. 8SW RF SOIOutstanding performance for premium & high-tier 5G sub-6 GHz smartphones#8sw-rf-soi 5G mmWave cellular 5G sub-6 GHz cellular FEMs using 8SW RF SOI8SW is the most advanced RF SOI solution in the GF RF portfolio. Take advantage of its high linearity and gain, low noise figure and industry-leading switch and low-noise amplifier (LNA) features for outstanding performance in premium and high-tier 5G sub-6 GHz mobile front-end modules (FEMs). Made for mobility8SW helps support high-performance connectivity from anywhere by combing low insertion loss and high RF voltage/power-handling capabilities with world-class NF and Ron*Coff metrics. No charger? No problem.8SW’s exceptional Ron*Coff performance and 1.8 V/1.2 V standard cell libraries help stretch the time needed between battery charges. Clarity you can count onWith high gain, thick top level metals and all-copper interconnects, 8SW is optimized to maximize signal strength for higher quality connections. Featured Resources 5G sub-6 GHz mobile FEMs using 8SW RF SOI
