FDX “Not a Niche” Technology September 22, 2016By Dave Lammers Of all of the numbers claimed for the GLOBALFOUNDRIES fully depleted SOI technology, the one that stands out in my mind is 39. That is the number of mask layers required to create a 22nm fully depleted SOI chip, one with eight metal layers. And it compares, said Jamie Schaeffer, the FDX™ program director, with 60 masks for a comparable chip with FinFET transistors. Of course, comparisons between FinFET and FD-SOI technologies are inexact. Each have their merits. With FD-SOI, the starting SOI wafer costs several times more than a bulk wafer. There are drive current differences. But consider how many more delicate fin-creating etch steps, how many more multi-passes through expensive scanners, are represented by those extra 21 mask layers. Then it starts to become clear that FD-SOI may provide cost advantages that were not really there when the competition was between bulk planar and SOI planar technologies. Continuity Concerns 22FDX® designs are prototyping now, with risk production in Q1 2017. The recently announced 12FDX™ technology moves to commercial production in 2019. Dan Hutcheson, CEO of VLSI Research Inc., surveyed 75 decision-makers at six chip companies, six EDA and IP vendors, and two universities, and found that one of their concerns was continuity. “One of the issues expressed in the survey was ‘Is there a future?’ They wanted to make sure there was a next node” to FD-SOI technology. Schaeffer also tagged the importance of the succession factor. “The entire FDX roadmap, integrating 22 and 12FDX, provides a complementary path to FinFETs,” he said. However, Schaeffer took slight umbrage when I asked a question that implied that the real volumes will remain in the FinFET arena, with processors and graphics chips, while FDX would be well-suited to the smaller potatoes, to the design teams that didn’t quite have the resources to tackle a FinFET project. “We are not doing this as a niche technology,” he replied. “We are targeting high-volume opportunities—transceivers, WiFi, vision processing, and automotive. We intend to fill a large volume of our Fab 1 in Dresden, and have plans in place from a capacity perspective,” Schaeffer said. GLOBALFOUNDRIES 22FDX is Manufactured in Europe’s Largest 300mm Factory That word, transceivers, is key to the FDX program. The 22FDX transistors exhibit an Fmax in the 325 GHz range, capable of meeting the nascent 5G cellular specification. Schaeffer said that the 22FDX and 12FDX technologies provide “a unique opportunity to integrate mmWave transceivers with ADCs, DACs and digital baseband. FinFETs provide the digital scaling but not the RF performance that is needed at mmWave frequencies. In the IoT market, FDX technology could support microcontroller-based SoCs with integrated low-power wireless. It also could come into play for products based on the new gigabit-class WiFi standards. And depending how quickly the 5G cellular standard is firmed up and how it fits in with the assisted-driving cars of the future, FDX may find large volumes in the automotive space. Analog Friendly Hutcheson said he was skeptical of SOI until he undertook the VLSI Research survey, and talked to device physicists about the relative merits of FinFETs and SOI transistors. “When we surveyed design engineers, they said that for analog, SOI is much better than FinFETs.” Dick James, senior fellow at ChipWorks (Ottawa), said that analog designers depend on an ability to adjust the width of their transistors. With FinFET-based circuits, designers deal with “a quantized transistor width,” adjusting transistor widths by using multiple fins. “With planar transistors, analog designers can tune their circuits by putting wider transistors wherever they want,” James said. The debate over power consumption also tilts in favor of SOI, James said. With the buried oxide layer (BOX), “every transistor, theoretically, can be surrounded by an insulation layer, and that helps control leakage and parasitics.” Back-biasing also plays a role in controlling power by raising the threshold voltage and reducing leakage where appropriate, he said. The debate over the relative merits of bulk FinFETs versus SOI technology has been going on for decades now, picking up intensity in the summer of 1998 when IBM formally announced that it would turn to SOI for its server processors. Intel vehemently supported its continued path on bulk silicon, ultimately leading to FinFETs, which have occupied center stage for much of the last decade. Now the FD-SOI or FinFET debate – where each fits in today’s technology spectrum — is reaching a new level of intensity, one that will play out in the marketplace. But why 22? Why not call it FDX20? And why 12, instead of using the 10nm delineation favored by others? This goes back to the cost-of-production issue. With 22nm design rules, Schaeffer said, single-pass patterning is sufficient. No double patterning is necessary. With 12nm, double-patterning gets the job done on critical layers, obviating the need for triple or quad patterning. There you go. With 39 mask layers, superior carrier frequencies at low power, FDX could provide an alternative to FinFETs, especially in markets where the combination of transistor density and good RF performance is valued. Let the competition begin.
格芯将提供行业领先高性能产品—7纳米FinFET技术 September 15, 2016公司为追求终极处理能力的产品拓展了它领先的规划路线图 加州 圣克拉拉，2016年9月15日 — 格芯今天宣布了为下一个时代的计算机应用提供具有终极性能的领先的7纳米FinFET半导体技术的计划。此技术可以为数据中心、网络、顶级移动处理器、深度机器学习应用提供更高的运算处理能力。 对比与现今16/14nm代工厂FinFET产品，格芯的全新7纳米FinFET预期将提供两倍的逻辑密度和30%的性能增长。平台基于工业标准FinFET晶体管结构和光学刻印技术，配备在关键层次的EUV匹配能力。此方案将通过大量重复利用公司14纳米FinFET技术的制程和工具来进行加速生产。14纳米FinFET技术现于纽约州萨拉托加的8号晶圆厂以投入大批量生产。格芯计划额外投入数十亿美元在8号晶圆厂以实施7纳米FinFET生产。 “格芯在从14纳米直接跳跃到7纳米，这一技术上的大胆的决定得到了很多领先半导体公司的支持，特别是当他们知道成本高昂的10纳米技术只能带来有限的性能和功率优势”，TIRIAS研究公司的创办人及分析部主任Jim McGregor说道。“如同28纳米与16/14纳米制程节点，7纳米技术至少在下一个10年内将成为主要节点，并将被整个半导体行业大量使用。” “对于加强下一代计算机体验的计算和图像产品规划来说，类似格芯7纳米FinFET这样的领先技术是关键因素，”AMD主席及总裁Lisa Su博士说道。“我们渴望与格芯继续密切合作，并期待见证格芯在近几年将14纳米技术中展现出的可靠执行与技术基础延续到7纳米技术上。” “IBM承诺，将推动半导体科技的极限作为积极长期研究的计划，并提上战略日程。”IBM研究中心高级副总裁 Arvind Krishna说道，“IBM研究中心持续与格芯合作开发新概念、新技巧与新科技，并一起加速我们在7纳米技术和将来的共同研究。” 格芯将展示一个全面的且富有竞争力，并能与制程开发一同优化的IP库。为使客户加快对7纳米技术的采用，格芯拓展了它的战略合作伙伴范围，现与INVECAS建立合作关系，合作范围超越14LPP和FDX™制程，现已涵盖了7纳米制程技术的铸造IP开发。这将为客户建立符合性能、功耗、面积需求的早期设计提供了坚实的基础。 基于在14LPP技术平台的成功，格芯的7纳米FinFET技术定位于推动下一代的计算应用，满足对超高性能的需求，其应用范围包括高端移动SoC 和云服务器处理器及网络基建。公司的高性能产品得到22FDX® 和12FDX™的增强，而这两项技术都已达到下一代智能连接设备对超低功耗的要求， 此类设备用于移动计算，5G连接，人工智能以及无人驾驶技术。 格芯的7纳米FinFET将得到完整的基础平台和复杂的IP，包括ASIC产品。实验芯片与来自高端客户的IP已经在8号晶圆厂投入运行。本技术预计将于2017年下半年可用于客户产品设计，将于2018年早期投入风险生产。 关于格芯 格芯是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。
格芯在22FDX®平台启动嵌入式MRAM September 15, 2016高性能嵌入式非易失性内存方案，是物联网汽车自动化领域新兴应用的完美选择 加州圣克拉拉，2016年9月15日—格芯今天介绍了可进化的嵌入式磁阻性非易失性内存技术（eMRAM），基于22FDX®平台，提供比现在的NVM产品快1000倍的写入速度和高1000倍的耐用性。在维持企业领先的eMRAM存储单元大小的同时，22FDX®具备了可以在260°C（在工业级别的可操作温度）回流焊接下维持数据的能力。 格芯的eMRAM将在22FDX®平台发布，应用了业内第一个22纳米耗尽时绝缘体上硅（FD-SOI）技术。具备多样性的eMRAM技术是为了代码储存（闪存）和工作内存（SRAM）设计，启用了超高效内存子系统，该子系统可在没有能量和性能损失的情况下多次重复启动。FDX™ 和 eMRAM的低功耗和有效的射频连接性IP，使22 FDX™成为电池供电的物联网产品与汽车自动化MCU的理想平台。 “客户正在寻求高效非易失性内存方案，以增加自己产品的能力，”格芯CMOS平台业务部高级副总裁Gregg Barltlett说道，“22FDX™ eMRAM的出现使系统设计者具备新的能力，将更好的功能实现在他们的MCU和SoC上，还能增进性能和功耗的表现。” 无人汽车的出现极大推动了一系列的需求，包括对芯片对内存性能的需求，这些更好的内存性能主要用于实时图像处理，高精度和连续性3D拓录数据和下一代无线更新的汽车自动化MCU。格芯的eMRAM利用独特的方法解决了此些高级驾驶辅助系统(ADAS)的要求，合并比SRAM更高密度的内存、快速写入、超高耐用性和非易失性功能，这些都只有磁阻型内存才能做到。 “新型非易失性内存正从研究阶段走向生产，”Coughlin联合公司主席Thomas Coughlin说道，“格芯的22FDX™ eMRAM将提供SoC能力上的极大的进步，利用了嵌入式MRAM的关键性能属性。电池供电的IoT设备、汽车MCU和SoC及SSD储存控制器的设计者必然会渴望利用此多样化嵌入式NVM技术的优势。” 格芯22FDX™ eMRAM的出现，是公司与MRAM界的先驱Everspin技术公司多年合作的成果。双方的合作已在2016年8月为世界提供了最高密度的ST-MRAM—Everspin的256兆DDR3处置磁场通道结型（pMJT）产品，此产品现已在格芯准备投入大批量生产。 格芯的22FDX™ eMRAM现正处于开发阶段，客户试用原型机预计于2017年问世，并于2018年投入量产。格芯的eMRAM比22纳米有更好的可扩展性，预期将在FinFET和未来的FDX平台推出。
GLOBALFOUNDRIES to Deliver Industry’s Leading-Performance Offering of 7nm FinFET Technology September 15, 2016Company extends its leading-edge roadmap for products demanding the ultimate processing power Santa Clara, Calif., September 15, 2016-GLOBALFOUNDRIES today announced plans to deliver a new leading-edge 7nm FinFET semiconductor technology that will offer the ultimate in performance for the next era of computing applications. This technology provides more processing power for data centers, networking, premium mobile processors, and deep learning applications. GF’s new 7nm FinFET technology is expected to deliver more than twice the logic density and a 30 percent performance boost compared to today’s 16/14nm foundry FinFET offerings. The platform is based on an industry-standard FinFET transistor architecture and optical lithography, with EUV compatibility at key levels. This approach will accelerate the production ramp through significant re-use of tools and processes from the company’s 14nm FinFET technology, which is currently in volume production at its Fab 8 campus in Saratoga County, N.Y. GF plans to make an additional mutli-billion dollar investment in Fab 8 to enable development and production for 7nm FinFET. “The industry is converging on 7nm FinFET as the next long-lived node, which represents a unique opportunity for GF to compete at the leading edge,” said GF CEO Sanjay Jha. “We are well positioned to deliver a differentiated 7nm FinFET technology by tapping our years of experience manufacturing high-performance chips, the talent and know-how of our former IBM Microelectronics colleagues and the world-class R&D pipeline from our research alliance. No other foundry can match this legacy of manufacturing high-performance chips.” “GF made a bold decision to jump directly from 14nm to 7nm–a decision that is now supported by several leading semiconductor companies as they see only marginal performance and power benefits for the high cost of the 10nm process node,” said Jim McGregor, founder and principal analyst at TIRIAS Research. “Much like the 28nm and 16/14nm process nodes, 7nm appears to be the next major process node that will be widely leveraged by the entire semiconductor industry for at least the next decade.” “Leading-edge technologies like GF 7nm FinFET are an important part of how we deliver our long-term roadmap of computing and graphics products that are capable of powering the next generation of computing experiences,” said Dr. Lisa Su, president and CEO, AMD. “We look forward to continuing our close collaboration with GF as they extend the solid execution and technology foundation they are building at 14nm to deploy high-performance, low-power 7nm technology in the coming years.” “IBM is committed to pushing the limits of semiconductor technology as part of its aggressive long term research agenda,” said Arvind Krishna, senior vice president and director of IBM Research. “IBM Research continues to collaborate with GF in developing new ideas, new skills and new technologies that will help accelerate our joint research in 7nm technology and beyond.” GF will deliver a comprehensive and competitive IP library, co-optimized with process development. To enable customers to accelerate adoption of 7nm FinFET technology, GF has expanded its strategic partnership with INVECAS beyond 14LPP and FDX™ processes to now include foundry IP development for 7nm process technologies. This will provide customers with a strong foundation to build early designs that meet their performance, power and area requirements. “INVECAS specializes in providing unrivaled IP solutions, ASIC and design services to GF’s customers that span the wide-range of GF’s leading edge FinFET and FDX processes,” said Dasaradha Gude, CEO, INVECAS. “Our strategic partnership with GF combined with our tailor-made foundry IP model allows us to develop a 7nm FinFET process foundation IP that meets the challenging performance requirements of 7nm customers’ leading-edge applications.” Building on the success of its 14LPP technology platform, GF’s 7nm FinFET technology is positioned to enable next-generation computing applications that demand ultra-high performance, from high-end mobile SoCs to processors for cloud servers and networking infrastructure. The company’s high-performance offerings are complemented by its 22FDX® and 12FDX™ technologies, which have been developed to meet the ultra-low-power requirements of the next generation of intelligent connected devices, from mobile computing and 5G connectivity to artificial intelligence and autonomous vehicles. GF’s 7nm FinFET technology will be supported by a full platform of foundation and complex intellectual property (IP), including an application-specific integrated circuit (ASIC) offering. Test chips with IP from lead customers have already started running in Fab 8. The technology is expected to be ready for customer product design starts in the second half of 2017, with ramp to risk production in early 2018. About GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Contacts:Jason GorssGF(518) 698-7765[email protected]
GLOBALFOUNDRIES Launches Embedded MRAM on 22FDX® Platform September 15, 2016High-performance embedded non-volatile memory solution is ideally suited for emerging applications in advanced IoT and automotive Santa Clara, Calif., September 15, 2016-GLOBALFOUNDRIES today introduced a scalable, embedded magnetoresistive non-volatile memory technology (eMRAM) on its 22FDX platform, providing system designers with access to 1,000x faster write speeds and 1,000x more endurance than today’s non-volatile memory (NVM) offerings. 22FDX eMRAM also features the ability to retain data through 260°C solder reflow, industrial temperature operation, while maintaining an industry-leading eMRAM bitcell size. GF’s eMRAM will be offered initially on its 22FDX platform, which leverages the industry’s first 22nm fully-depleted silicon-on-insulator (FD-SOI) technology. This versatile eMRAM technology is designed for both code storage (flash) and working memory (SRAM) to enable ultra-efficient memory sub-systems that can be power cycled without any energy or performance penalty. The power efficiency of FDX™ and eMRAM, coupled with the available RF connectivity IP, makes 22FDX an ideal platform for battery-powered IoT products and automotive MCUs. “Customers are looking for a high-performance non-volatile memory solution that expands their product capabilities,” said Gregg Bartlett, senior vice president CMOS Platforms Business Unit, GF. “Our introduction of 22FDX eMRAM enables system designers with new capabilities, allowing them to build greater functionality into their MCUs and SoCs, while enhancing performance and power efficiency.” The emergence of autonomous vehicles is rapidly driving the need for increased on-chip memory capacities required for real-time vision processing, high-precision, continuous 3D mapping data and next-generation automotive MCUs that update over-the-air. GF’s eMRAM uniquely addresses these advanced driving assistance system (ADAS) requirements by combining greater memory density than SRAM, with the fast write, very high endurance, and non-volatility that only magnetoresistive memory can provide. “Emerging non-volatile memories are moving from the lab to the fab,” said Thomas Coughlin, President of Coughlin Associates. “GF’s 22FDX eMRAM will offer a major advancement in SoC capabilities, by leveraging the key performance attributes of embedded MRAM. Designers of battery powered IoT devices, automotive MCUs and SoCs and SSD storage controllers will certainly want to take advantage of this versatile embedded NVM technology.” The introduction of GF’s 22FDX eMRAM is a result of the company’s multi-year partnership with MRAM pioneer, Everspin Technologies. The partnership has already delivered the world’s highest density ST-MRAM in August, 2016 – Everspin’s 256Mb DDR3 perpendicular magnetic tunnel junction (pMTJ) product, which is now successfully sampling and is being readied for mass production at GF. GF’s 22FDX eMRAM is currently in development and is expected to be available for customer prototyping in 2017, with volume production in 2018. GF’s eMRAM technology is scalable beyond 22nm and is expected to be available on both FinFET and future FDX platforms. About GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Contacts:Erica McGillGF(518) 305-5978[email protected]
Synopsys公司加入格芯的FDXcelerator合作伙伴计划，以实现使用FD-SOI过程的创新设计 September 9, 2016MOUNTAIN VIEW, Calif. and SANTA CLARA, Calif., Sept. 8, 2016 /PRNewswire/ — Synopsys, Inc. (Nasdaq: SNPS) and GLOBALFOUNDRIES today announced that Synopsys has joined the foundry’s FDXcelerator™ Partner Program, an ecosystem designed to facilitate 22FDX™ system-on-chip (SoC) designs. This program enables designers to deploy Synopsys’ comprehensive RTL-to-GSDII solution with superior power and performance metrics for FDX-based designs. The collaboration accelerates the development of innovative products in applications spanning systems for intelligent clients, 5G connectivity, augmented and virtual reality and automotive.
Synopsys Joins GLOBALFOUNDRIES FDXcelerator Partner Program to Enable Innovative Designs Using the FD-SOI Process September 9, 2016Program Gives Synopsys Access to GLOBALFOUNDRIES FDX Portfolio and Provides Customers with Tools that Support the Differentiated Features of FD-SOI MOUNTAIN VIEW, Calif. and SANTA CLARA, Calif., Sept. 8, 2016 /PRNewswire/ — Synopsys, Inc. (Nasdaq: SNPS) and GLOBALFOUNDRIES today announced that Synopsys has joined the foundry’s FDXcelerator™ Partner Program, an ecosystem designed to facilitate 22FDX™ system-on-chip (SoC) designs. This program enables designers to deploy Synopsys’ comprehensive RTL-to-GSDII solution with superior power and performance metrics for FDX-based designs. The collaboration accelerates the development of innovative products in applications spanning systems for intelligent clients, 5G connectivity, augmented and virtual reality and automotive.
格芯使用12nm FD-SOI技术扩展FDX™路线图 September 8, 20162016年9月8日 12FDX™可根据需要提供全节点扩展，超低功耗和性能 加利福尼亚州圣克拉拉市 2006年9月29日 格芯今天公布了新的12nm FD-SOI半导体技术，通过提供业界首个多节点FD-SOI线路图，扩展了其领先地位。基于其22FDX®产品的成功，该公司的下一代12FDX™平台旨在实现包括移动计算，5G连联接，人工智能和自主车辆的各种应用的未来智能系统。 这个世界正在被数万亿的设备连接起来，这种趋势使得这个世界更加的集成化，同时许多新兴的应用需要采用新的半导体创新方法来实现。使这些应用成为现实,芯片正在发展成为微型系统。同时，这些微型系统中集成了超低功耗智能组件，包括无线连接，非易失性存储器和电源管理。 格芯的全新12FDX技术专门用于提供前所未有的系统集成度，以及设计灵活性和功率扩展。 12FDX为系统集成设定了新的标准，同时也提供了一个优化平台,把射频（RF），模拟，嵌入式存储器和高级逻辑集成到单个芯片上。通过使用软件控制的晶体管，该技术可以提供业界最广泛的动态电压调整和无与伦比的设计灵活性。同时，能够及时提供峰值性能，并且可以平衡静态和动态功率以实现最终的能源效率。 “某些应用需要FinFET晶体管的卓越性能，但绝大多数连接设备则需要高水平的集成度，以及在性能和功耗上的灵活性。在这些方面，FinFET是无法实现的”，格芯的首席执行官Sanjay Jha说。 “我们的22FDX和12FDX技术通过为下一代连接的智能系统提供替代途径，填补了行业路线图的空白。通过我们的FDX平台，设计成本明显降低。同时，也重新开启了高级节点迁移的门户，从而激发了整个生态系统的创新。“ 格芯的新型12FDX技术建立在12nm全耗尽绝缘体（FD-SOI）平台上，能够实现10nm FinFET的性能，同时具有比16nm FinFET更少的功耗和更低的成本。该平台提供了全节点的扩展能力，相比现今的FinFET技术，提供15％的性能提升，并节省达50％的功耗。 “芯片制造业已不再是一体化的。虽然FinFET是最高性能产品的首选技术，但是对于许多追求性价比的移动产品和物联网产品，其行业产品路线图并不是太清晰。这些产品需要尽可能低的功耗，同时能有足够快的频率。”Linley Group的创始人兼首席分析师Linley Gwennap表示， “格芯的22FDX和12FDX技术已经很好地弥补了这一空白，为先进的节点设计提供了一个替代的迁移路径，特别是针对那些在不增加裸片成本的情况下寻求降低功耗的方案。今天，格芯是22nm及以下FD-SOI唯一的供应商，这一点能让格芯显得独一无二。” “当GF推出22FDX以来，我看到一些全新的功能。” VLSI研究公司董事长兼首席执行官G. Dan Hutcheson表示，“需要特殊化设计的人们无法忽视电力和性能的动态平衡。 现在，凭借其全新的12FDX产品，格芯正在为此技术提供明确的承诺，特别是对于目前市场上最具突破性创新的物联网和汽车。 格芯的FD-SOI技术将成为这一突破性创新的关键因素。” IBS公司创始人兼首席执行官Handel Jones表示：“FD-SOI技术可以为那些需要特殊化设计的用户提供功率，性能和成本的动态平衡。”格芯的全新12FDX产品提供了业界首个FD-SOI的产品规划，这样就能将低成本的迁移路径提供给智能客户端，5G，AR / VR，和汽车等领域。 格芯在德国德累斯顿的Fab 1晶圆厂目前正在为12FDX的发展和后续制造准备进行准备。第一批为客户生产的产品预计将于2019年上半年开始生产。 “我们对于格芯12FDX产品的推出感到非常兴奋，并希望这样的产品能提供给中国的客户。”中国科学院上海微系统与信息技术研究所所长的王曦院士说，“扩展FD-SOI产品路线图将使移动，物联网和汽车等市场的客户能够利用FDX技术的功耗优势和性能优势来创造有竞争力的产品。” “NXP半导体公司的的下一代i.MX多媒体应用处理器正在利用FD-SOI的优势，实现在汽车，工业和消费应用领域的功效方面和随时进行调整能力的领先地位。” NXP半导体公司应用处理器产品线的的副总裁Ron Martino表示， “格芯的12FDX技术是对整个行业的一个巨大贡献，因为它为FD-SOI提供了下一代节点，并且将进一步扩展平面设备的能力，为未来智能、联通的安全系统提供更低的风险，更广泛的动态范围和高的性价比。” “在INVECAS，我们的授权是向格芯客户提供无与伦比的IP解决方案，ASIC，设计服务以及软件和系统级专业知识，从而确保他们充分利用技术来降低设计的复杂性和时间门槛。” INVECAS首席执行官Dasaradha Gude说， “基于我们已经为22FDX完成的工作，我们期待扩大我们的战略关系，以支持格芯的新型12FDX技术，为客户提供创新的FD-SOI设计的路线图。” “VeriSilicon作为FD-SOI设计推动者之一，充分地利用了其硅平台服务（SiPaaS）以及为SoC提供一流的IP和设计服务的经验。” VeriSilicon的总裁兼首席执行官Wayne Dai说， “FD-SOI技术的独特优势能使我们在汽车，物联网，移动和消费市场脱颖而出。我们期待与格芯扩大其在12FDX产品线上的合作，并为中国市场的客户提供高质量，低功耗和高性价比的解决方案。” “12FDX开发将在功率，性能和智能扩展方面获得更大的突破，因为12nm最适合双重刻印复写，并以最低的制程复杂度提供最佳的系统性能和功耗表现。”CEA技术研究所Leti首席执行官Marie Semeria表示，“我们很高兴看到莱迪团队与格芯在美国和德国的合作结果，扩展了FD-SOI技术的路线图，这将成为连接设备的全系统芯片集成的最佳平台。” “我们非常高兴看到22FDX产品在无晶圆厂客户圈内的强劲势头，它得到了广泛的采用。现在，这款新的12FDX产品将进一步扩大FD-SOI市场的应用。”Soitec首席执行官Paul Boudre表示， “在Soitec，我们已经准备好支持格芯，从22nm到12nm的高容量，高质量的FD-SOI衬底。这对于我们的行业来说是一个惊人的机会，可以及时支持大量新的移动和连接应用程序。” 关于格芯 GF是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。 联系人： Jason Gorss 电话：（518）698-7765 [email protected]
格芯公布生态系统合作伙伴计划，加速未来互联系统的创新 September 8, 2016 FDXcelerator™合作伙伴计划扩展了生态系统，并促进了格芯的FDX™产品组合的更快更广泛的部署 加利福尼亚州圣克拉拉市 2016年9月8日 格芯今天宣布推出新的合作伙伴计划FDXcelerator™，这是一个旨在促进22FDX®片上系统（SoC）设计的生态系统，该系统可以缩短客户的产品上市时间。 随着近期公布的下一代12FDX™技术，FDXcelerator合作伙伴计划基于格芯在行业首创的FD-SOI路线图，为进行先进节点设计的客户提供了较低的成本迁移途径。 参与格芯和FDXcelerator合作伙伴解决方案，客户将能够构建创新的22FDX SoC解决方案，并轻松从40nm和28nm等传统节点迁移到FD-SOI。初期的FDXcelerator合作伙伴已经为该计划提供了一系列重要的产品，其中包括： · 工具（EDA）可以添加特定的模块来轻松地利用FDSOI偏差的差异化功能来补足行业领先的设计流程 · 一个全面的设计元素库（IP），包括基础知识产权，接口和复杂的IP。这样的元素设计库（IP）可以使铸造厂客户能够从验证的IP元素开始设计 · 平台（ASIC）允许客户在22FDX上构建完整的ASIC产品 · 参考解决方案（参考设计和系统IP）。合作伙伴在新兴应用领域提供系统级专业知识，使客户能够加快其产品的上市时间 · 资源（设计咨询和服务）。合作伙伴接受了专门的培训用以支持22FDX技术 · 产品包装和测试（OSAT）解决方案 格芯的产品管理高级副总裁Alain Mutricy说：“以22FDX作为建立差异化，高度集成的系统的平台越来越成为一种行业趋势。现在是加强行业合作的好时机，使我们的客户能更快的接受和采用22FDX。 FDXcelerator将通过为真正创新的FDX定制解决方案和服务创造市场，扩展FD-SOI生态系统的覆盖范围。 FDXcelerator合作伙伴计划创建一个开放框架，允许选定的合作伙伴将其产品或服务集成到经过验证的即插即用设计解决方案目录中。这种集成度允许客户创建高性能设计，同时通过接触特定于22FDX技术的广泛的优质产品，最大限度地减少开发成本。合作伙伴生态系统使其成员和客户能够利用FDX市场的广泛使用来加速发展。 随着设计人员利用该过程作为基于Fin-FET的芯片技术的替代品，FD-SOI技术已经越来越多的被设计者使用。该技术以最低的解决方案成本来实现所需要的性能和能耗要求。根据最近的Linley Group微处理器报告，FD-SOI提供了FinFET的替代方案，格芯的FDX技术为那些不太能接受FinFET的成本和复杂性的应用提供了替代的方案。 FDXcelerator合作伙伴计划的初始合作伙伴包括：Synopsys（EDA），Cadence（EDA），INVECAS（IP和设计解决方案），VeriSilicon（ASIC），CEA Leti（服务），Dreamchip（参考解决方案）和Encore Semi（服务）。这些公司已经开始提供先进的22FDX SoC解决方案和服务。更多的FDXcelerator成员将在接下来的几个月内公布。 有兴趣了解FDXcelerator的客户和合作伙伴，请访问www.globalfoundries.com/FDXcelerator 行业寄语 “我们与格芯合作，一起使用FDX技术来为客户开发全面的Cadence FD-SOI。通过格芯的 FDXcelerator合作伙伴计划，我们的共同客户可以在紧凑的市场期限内获得创建高级SoC设计所需的工具和支持。” Custom IC and PCB Group at Cadence高级副总裁兼总经理 Tom Beckley “FD-SOI技术是Dreamchip的战略解决方案推动者，我们很高兴加入FDXcelerator合作伙伴计划。作为初始成员，这一合作将使共同客户能够接触Dreamchip经验证的设计能力。该能力主要专注于汽车ADAS多处理器SoC FDX，系统和嵌入式软件解决方案，这样可以产生具有成本优势的自动驾驶应用。 Dreamchip常务董事兼首席运营官Jens Benndorf博士 “Encore Semi很高兴扩大与格芯的合作，我们非常支持FDXcelerator计划。 FD-SOI技术真正打开了设计创新的大门。 格芯及客户可以依靠Encore Semi的专家为FD-SOI项目带来积极的影响。” Encore Semi总裁兼首席运营官Olivier Lauvray “我们的目的是为格芯客户提供无与伦比的IP解决方案，ASIC和设计服务，以及软件和系统级专业知识，从而确保22FDX客户充分利用技术来降低设计在复杂性和时间安排方面的困难。在我们的战略关系上，我们很荣幸能够成为格芯FDXcelerator计划的初期合作伙伴。该计划是一项突破性的举措，旨在帮助广大客户加速投入量产的过程，并在格芯FDX技术上创建更广泛的解决方案。” INVASAS首席执行官Dasaradha Gude “这种伙伴关系是Leti全球战略的一个关键组成部分。格芯FDXcelerator可以帮助Leti的广大的设计人员利用FD-SOI技术在超低功耗设计中获得显著的优势，同时增加我们各自的客户对于我们技术的使用。 Leti首席执行官Marie Semeria “Synopsys很高兴成为FDXcelerator计划的一部分，作为初始成员，Synopsys和格芯在FDX平台上的合作为共同客户提供了FD-SOI特别的端对端EDA解决方案。这包括对体偏置设计能力无缝支持，同时这种能力也会适应SoC操作与高性能设计的超低功耗操作相结合。很多客户希望通过经验证的Synopsys Galaxy设计平台来开放FDX价值主张，我们也期待着更多的支持这些客户。 Synopsys设计集团产品营销副总裁Bijan Kiani “VeriSilicon为客户提供基于我们一流的IP的定制芯片解决方案。我们的端到端半导体服务不仅可以缩短设计周期，还可以提高质量，降低风险。通过成为FDXcelerator合作伙伴，我们可以获得更加丰富的IP和设计工具，为客户提供最广泛和最具灵活性的22FDX解决方案和设计服务。 VeriSilicon主席，总裁兼首席执行官Wayne Dai 关于格芯 格芯是世界上第一个具有真正意义上足迹遍布全球的全方位服务晶圆制造商。该公司于2009年3月成名，并迅速实现了规模化，成为世界最大的晶圆生产商之一，为250多个客户提供先进技术和独特制造的组合。格芯在新加坡，德国和美国经营，是唯一提供跨越全球三大洲的制造中心，并提供的足够灵活性和高度安全性的代工厂。该公司的300mm晶圆厂和200mm晶圆厂提供从主流到前沿的全系列制程技术。格芯的制造业务遍及全球，而格芯位于美国，欧洲和亚洲的半导体业务中心的大量的研发和设计实现人员为格芯的全球制造业务提供全面的支持。格芯由Mubadala Development Company拥有。欲了解更多信息，请访问https://www.globalfoundries.com。 联系人： Jason Gorss 电话：（518）698-7765 [email protected]
GlobalFoundries Unveils Ecosystem Partner Program to Accelerate Innovation for Tomorrow’s Connected Systems September 8, 2016 FDXcelerator™ Partner Program expands the ecosystem and promotes faster, broader deployment of GF’s FDX™ portfolio Santa Clara, Calif., September 8, 2016 – GlobalFoundries today announced a new partner program, called FDXcelerator™, an ecosystem designed to facilitate 22FDX® system-on-chip (SoC) design and reduce time-to-market for its customers. With the recent announcement of the company’s next-generation 12FDX™ technology, the FDXcelerator Partner Program builds upon GF industry-first FD-SOI roadmap, a lower-cost migration path for customers desiring advanced node design. Together with GF and FDXcelerator Partner solutions, customers will be able to build innovative 22FDX SoC solutions as well as ease migration to FD-SOI from bulk nodes such as 40nm and 28nm. Initial FDXcelerator Partners have committed a set of key offerings to the program, including: tools (EDA) that complement industry-leading design flows by adding specific modules to easily leverage FDSOI body-bias differentiated features,a comprehensive library of design elements (IP), including foundation IP, interfaces and complex IP to enable foundry customers to start their designs from validated IP elements,platforms (ASIC), which allow a customer to build a complete ASIC offering on 22FDX,reference solutions (reference designs, system IP), whereby the Partner brings system-level expertise in Emerging application areas, enabling customers to speed-up time to market,resources (design consultation, services), whereby Partners have trained dedicated resources to support 22FDX technology, and;product packaging and test (OSAT) solutions. “22FDX is increasingly gaining momentum as the platform of choice to build differentiated, highly-integrated system solutions,” said Alain Mutricy, senior vice president of Product Management at GF. “Now is the time to step up industry collaboration to enable our customers to accelerate the adoption of 22FDX. FDXcelerator will extend the reach of the FD-SOI ecosystem by creating a marketplace for truly innovative FDX-tailored solutions and services.” The FDXcelerator Partner Program creates an open framework to allow selected Partners to integrate their products or services into a validated, plug-and-play catalog of design solutions. This level of integration allows customers to create high-performance designs while minimizing development costs through access to a broad set of quality offerings, specific to 22FDX technology. The Partner ecosystem positions members and customers to take advantage of the broad adoption and accelerating growth of the FDX market. FD-SOI technology has been gaining ground as designers leverage the process as an alternative to Fin-FET-based technologies for chips that require performance on demand and energy efficiency at the lowest solution cost. According to a recent Linley Group Microprocessor Report, FD-SOI Offers Alternative to FinFET, GF’s FDX technologies provide an alternative path for applications that cannot accept the cost and complexity of FinFETs. Initial partners of the FDXcelerator Partner Program are: Synopsys (EDA), Cadence (EDA), INVECAS (IP and Design Solutions), VeriSilicon (ASIC), CEA Leti (services), Dreamchip (reference solutions) and Encore Semi (services). These companies have already initiated work to deliver advanced 22FDX SoC solutions and services. Additional FDXcelerator members will be announced in the following months. Customers and Partners interested in learning more about FDXcelerator can visit here. Supporting Quotes “We collaborated with GF to develop comprehensive Cadence FD-SOI-ready flows for customers using FDX technologies. Through the GF FDXcelerator Partner Program, our mutual customers have access to the tools and support they need to create advanced SoC designs within tight market deadlines.” Tom Beckley, senior vice president and general manager, Custom IC and PCB Group at Cadence “FD-SOI technology is a strategic solution enabler for Dreamchip. We are thrilled to join the FDXcelerator Partnership Program as an initial member. This collaboration will enable mutual customers to access Dreamchip’s validated design capabilities focused on automotive ADAS multi-processor SoC FDX-centric implementation, system, and embedded software solutions, enabling the industry for cost-effective autonomous driving applications.” Dr. Jens Benndorf, managing director and COO, Dreamchip “Encore Semi is thrilled to expand its collaboration with GF and support the FDXcelerator initiative. The FD-SOI technology really opens the door for design innovation. GF and its customers can rely on Encore Semi’s experts to positively impact their FD-SOI projects.” Olivier Lauvray, president and COO, Encore Semi “Our companies charter is to provide unrivaled IP solutions, ASIC and Design Services, and software and system-level expertise to GF customers. Thereby ensuring 22FDX customers are getting the most out of the technology and lowering the barrier of design complexity and schedule. Building on our strategic relationship, we are honored to be an initial partner in GF FDXcelerator Program, the ground-breaking initiative to enable a broader range of customers, accelerate time-to-volume, and create a broader range of solutions on GF FDX technologies.” Dasaradha Gude, CEO, INVECAS “This kind of partnership is a key part of Leti’s global strategy. GF FDXcelerator positions Leti to help a broad range of designers utilize FD-SOI technologies significant strengths in ultra-low-power design, giving customers increased access to our respective technologies.” Marie Semeria, CEO, Leti “Synopsys is pleased to be part of the FDXcelerator program as an initial member. The collaboration between Synopsys and GF on the FDX platform provides mutual customers access to FD-SOI specific end-to-end EDA solutions. This includes seamless support for the body bias design capability that enables adaptive SoC operation marrying high-performance design and ultra-low-power operation. We look forward to supporting customers who will unlock the FDX value proposition through the validated Synopsys Galaxy Design Platform.” Bijan Kiani, vice president of product marketing for Synopsys’ Design Group “VeriSilicon offers our customers custom silicon solutions based on our best-in-class IPs. Our end-to-end semiconductor turnkey services can not only shorten their design cycle, but also enhance quality and reduce risk. By becoming an FDXcelerator partner, we have rich IPs and design tools to offer our customers the best in breadth and flexibility in 22FDX solutions and design services.” Wayne Dai, VeriSilicon chairman, president and chief executive officer About GF GF is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 250 customers. With operations in Singapore, Germany and the United States, GF is a foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s 300mm fabs and 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GF is owned by Mubadala Development Company. For more information, visit https://www.gf.com. Contacts: Erica McGillGF(518) 305-5978[email protected]
