Dream Chip Technologies Presents First 22nm FD-SOI Silicon of New Automotive Driver Assistance SoC February 27, 2017Advanced driver assistance system (ADAS) computer vision SoC developed for European THINGS2DO project with working first silicon fabricated on GLOBALFOUNDRIES’ 22nm
CES 2017: Reflections on Walking the Floor and Top 5 Trends February 23, 2017 By: Nitin Kulkarni Before the industry’s attention shifts to the next big international tech conference, MWC, I wanted to share some insights about CES. This year’s event was a record-breaker, with more than 3,800 exhibiting companies covering more than 2.6 million net square feet exhibit space. In addition the show welcomed more than 600 startups at the Eureka Park Marketplace – all showcasing the connected future of technology. Here are a few top trends and takeaways from my experience walking the floor at CES 2017: 1. The connected home gets smarter, and more focused Compared to CES in years past, this year appliances have gotten smarter because electronics companies are betting on consumers embracing smart personal assistant technology for the connected home such as voice activated appliances and smart LED bulbs that change color/ambience/intensity via a phone interface. Several companies were offering “smart home kits,” and a few products on display included smart speakers, smart lighting, smart appliances (white goods), home robots, even a smart mirror that will scan your face for wrinkles! Amazon’s Alexa was prevalent in several appliances. Multi-node WiFi, also known as “whole home WiFi,” systems are becoming part of the “smart” home infrastructure as they can spread a WiFi network over a large area by simply adding a node where necessary without the need of an additional gateway or router. With the onset of Bluetooth 5.0, coupled with Bluetooth Mesh technology, the indoor wireless signal range can be quadrupled (from Bluetooth 4.x) to nearly 120 feet, essentially blanketing a home with coverage via multiple Bluetooth devices. 2. Virtual reality getting real AR/VR/MR was everywhere! CES was the best place to get hands-on experience with some of the newest AR/VR devices. We saw everything from boots that enable you to feel the digital worlds you’re walking through to a candle that lets you smell. At the forefront of mobile AR/VR was Qualcomm®’s Snapdragon™ 820/835. The 835 was being promoted for AR smartglasses for mobile entertainment and computing. VR is also one of the key areas that requires extreme performance PC designs based on faster and more advanced architectures. 3. Smarter, smaller drones Drone technology can now support more advanced tech features such as real-time obstacle detection and avoidance during flight. Many drones supported 4K camera, 10-30min flying time, 2.4GHz WiFi, high-precision GPS modules with improved location accuracy (some support Follow-Me mode), some with 360 degree view. Battery life is being continuously improved by advances in battery management design as well as software algorithmic implementation in drone architecture. Some drones displayed included more advanced features such as real-time 3D terrain/surface mapping that can be used in in industries such as agriculture, land/resource management and building/architectural visualization. Today toy drones for recreation/hobby are available for less than $100 as well as high-end and advanced functionality drones (with longer flight times and operating ranges) that exceed $2500. 4. Electronics merging with automotive This year there was a real synthesis between the automotive and electronics industries, with hundreds of automotive companies showcasing their new automotive technologies ranging from self-driving systems and electric cars to new user interfaces. Digital know-how is now required to implement autonomous driving. New platform highlights included integrating gigabit-class LTE connectivity to the car with high-bandwidth in-car connectivity over WiFi, ethernet, BT and BLE. Other show “drivers” included top-tier auto-makers announcing integration of a new UI concept which is a virtual free-floating display controlled via finger gestures and new partnerships for an AI-powered car by 2018. Audio and speech recognition technologies will play a huge role going forward – as showcased by the integration of Amazon’s Alexa and Microsoft’s Cortana digital assistant by a variety of automakers. Moreover, the car is an extension of a user’s digital and social connectivity, and vehicle infotainment (IVI)bsystems require additional storage space for rich multimedia data and advanced software and applications. GF’s FDX technology platform empowers IVI systems for automotive. 5. Wearables grow up The wearable market has spread well beyond the confines of wrist-based technology. We saw smart hair brushes that coach you to be a better brusher to a new line of clothing designed to improve sleep quality to headphones that claim to prime your brain for faster adaptation to exercise – a lot of cool digital-health tools on the horizon. Wearables along with other electronic devices are a big part of IoT, and they will play the role of data producers. An example would be wearable health devices. Since the physical data collected by the things at the edge of the network is usually private, processing the data at the edge could protect user privacy better than uploading raw data to the cloud. Consumer electronics have become increasingly important in driving the entire global tech industry, and CES is the place that points to a more connected future. With increasing numbers, various devices are going online and networking with each other as well as users interacting with their devices in new ways. Networks which carry the data traffic and Data Centers that harness and transform the raw data to faster decision-making insights and outcomes are driving new requirements for semiconductors that are power efficient, optimized, and cost-effective for IoT nodes. We are starting to see the shift to leading-edge 28nm, 22nm, and 14nm (and beyond) process technology, and a growth in edge-node computing. GF’s CMOS, RF and ASIC technologies address this leading edge shift. Specifically, our FD-SOI (FDX) and FinFET platforms target both the high and mid-end markets. Critical to this is the ability to sense, process, control, and communicate in a highly energy and cost efficient manner. Some essential requirements for IoT devices include low power, cost-effective performance, RF connectivity, superior analog/power integration and smaller packaging. All of these IoT trends play well in the direction of GF’s technology offerings –low-cost, efficient, scalable and reliable solutions. Our unique FDX portfolio supports multiple wired and wireless products across a range of applications includes the industry’s lowest power RF solutions where GF is the established market leader in RF SOI, to serve the demanding needs of IoT. Semiconductors have a tremendous role to play in enabling these cool, new devices we see every year at CES — a technology opportunity of a lifetime. GLOBALFOUNDRIES, the GF logo and combinations thereof are trademarks of GF Inc. in the United States and/or other jurisdictions. Other product or service names are for identification purposes only and may be trademarks or service marks of their respective owners. Use of those names, logos, and brands does not imply endorsement. All photographic images provided by Nitin Kulkarni, GF. About Author Nitin Kulkarni Nitin is a Principal Staff Advanced Marketing Manager at GLOBALFOUNDRIES. He is responsible for product and technical marketing of GLOBALFOUNDRIES’ CMOS product portfolio, with a focus on IoT and Industry 4.0 market segments. Prior to joining GLOBALFOUNDRIES, Nitin was Divisional Marketing Manager at Cypress Semiconductor (formerly Spansion, Inc.) where he was instrumental in launching and leading marketing activities for the company’s Serial Flash (SPI) product line. Nitin has over 20 years’ experience in engineering, product management and marketing of semiconductor products including x86 microprocessors, communications/networking and flash memory. He holds a Master of Science degree in Electrical Engineering (MSEE) from the University of North Carolina, Charlotte, and a Bachelor of Engineering (BE) in Electrical Engineering from the College of Engineering, University of Pune, India.
关于2017 CES展会上的5大前沿趋势的思考 February 23, 2017 作者: Nitin Kulkarni 在整个行业的注意力转移到下一格大型国际科技大会(也就是MWC)之前,我想分享一些我关于CES的见解。 今年的CES展会创下历史纪录,超过3800家公司参展,展会面积达到260多万平方英尺。 此外,该展会欢迎在尤里卡公园市场上的600多家初创公司,所有这些公司都展示了它们和未来相关的技术。 2017: 以下是我对2017年CES展会上的几个热门趋势的总结: 连接让家变得更智能,更加专注 与过去几年的CES展会相比,今年CES展会上的电器已经变得更加智能了,因为电子公司正在投入消费者接受连接家庭的智能个人助理技术,例如:语音激活应用;通过手机界面改变颜色/氛围/强度的智能LED灯泡。几家公司已经开始提供“智能家居套件”,并且展出了很多相关产品,包括:智能扬声器,智能照明,智能家电(白色家电),家用机器人,以及可以扫描脸部皱纹的智能镜子。亚马逊的Alexa出现在这这几个家用电子产品中。 多节点WiFi也被称为“全家庭WiFi”。该系统正在成为“智能”家庭基础设施的一部分,因为他们可以通过简单的步骤就可以在必要的地方添加一个节点来扩展WiFi网络,而不需要额外的网关或路由器。随着蓝牙5.0的发展,加上蓝牙网状技术,室内无线信号范围可以增加四倍(相比蓝牙4.x)到接近120英尺,基本上可以通过多个蓝牙设备来覆盖整个家庭的面积。 虚拟(AR)现实变得真实 AR / VR / MR无处不在! CES是获得最新AR / VR设备实践经验的最佳场所。我们可以一揽全局,同时让你全方位的触摸到这个数字世界。 在移动AR / VR的最前沿是Qualcomm®的Snapdragon™820/835。 835是正在被推广用于AR智能眼镜以实现移动娱乐和移动计算。 VR也是需要极好的微计算的表现的领域之一,这种微计算设计需要更快和更加先进的架构。 更聪明,更小的无人机 无人机技术现在可以支持更先进的功能,比如:障碍物实施探测和规避障碍物。 许多无人机都支持多种功能,包括支持4K摄像机,10-30分钟飞行时间,2.4GHz WiFi,高精度GPS模块,位置精度提高(一些支持“Follow-Me”模式),其中一些具有360度视图。随着电池管理设计的进步,以及无人机架构中的软件算法实现,电池寿命不断得到改善。一些无人机拥有很多高级的功能,例如可用于农业土地和资源管理,建筑可视化,以及实时的3D地形/地面绘图。 今天,娱乐级的玩具无人机的售价低于100美元,高端的高级功能无人机(更长的飞行时间和运行范围)超过2500美元。 电子与汽车和电子设备的融合 今年,汽车和电子行业已经有了一个真正的融合,数以百计的汽车制造商展示了他们的新型汽车技术,这些技术包括自动驾驶系统,电动汽车,和新用户界面。 自动驾驶需要利用更多的新型技术。新的平台亮点包括通过WiFi,以太网,BT和BLE将千兆级LTE连接集成到车载高速宽带系统上。其他展示的“自动驾驶司机”包括顶级汽车制造商宣布整合的一个新的UI概念,这是通过手指手势控制的虚拟自由浮动显示器,以及在2018年的AI动力汽车的新合作伙伴关系。 音频和语音识别技术将在未来发挥巨大的作用 – 正如由各种汽车制造展示的亚马逊的Alexa和微软的Cortana电子助理系统的整合。此外,该车是用户数字系统和社交系统的延伸,车载信息娱乐(IVI)系统需要额外的存储空间用于丰富的多媒体数据和先进的软件和应用。 格芯的FDX技术平台为车载信息系统(IVI)提供授权。 可穿戴设备市场的增长 目前的可穿戴市场已经远远超出了手腕相关产品的范畴。我们可以看聪明的梳子—可以帮助你成为一个更好的梳子使用者;新的用于制造衣服的线;提高睡眠质量同时帮助大脑更快适应锻炼的耳机;很多酷炫的的数字健康工具。 可穿戴设备以及其他电子设备是物联网的重要组成部分,它们将起到数据生产者的作用。一个很好的例子是穿戴式健康器材。由于网络边缘处理的物理数据通常是私有的,处理边缘的数据可能比将原始数据上传到云端更好地保护用户的隐私。 消费电子在推动整个全球科技行业变得越来越重要,而CES则向我们展示了一个根据“”“联接性”的未来。随着数量的增加,各种设备正在被连接到互联网,网络和各种用户将会以更多的新的方式进行互联。 承载大量数据流的网络,以及利用并转换大量原始数据并作出快速决策的数据中心将对半导体行业提供新的需求。要求半导体具有为物联网节点提供更高的功效效率,优化能力和性价比。我们开始看到转向领先的28纳米,22纳米和14纳米(及以上)工艺制程,以及边缘节点计算的增长。格芯的CMOS,RF和ASIC技术解决了这一领先的转变。具体来说,我们的FD-SOI(FDX)和FinFET平台可以同时面向高端市场和中端市场。 对这一点至关重要的是以高能耗和成本效益的方式感知,处理,控制和沟通的能力。 物联网设备的一些基本要求包括低功耗,高性价比的性能,射频连接,卓越的模拟/功率集成和更小的封装。所有这些物联网的趋势在格芯的技术产品— 低成本,高效,可扩展和可靠的解决方案方面发挥了良好的作用。我们独特的FDX产品组合支持多种应用的有线和无线产品,其中包括业界最低功耗的射频解决方案。格芯是RF SOI领域的领先厂商,可满足物联网的苛刻需求。 在每年的CES展会上,半导体在这些酷炫的新设备上发挥着至关重要的作用。对于半导体制造商,这也是千载难逢的机会。 GLOBALFOUNDRIES,格芯的徽标及其组合是格芯公司在美国和/或其他司法管辖区的商标。其他产品或服务名称仅被用于供识别目的,可能是其各自所有者的商标或服务标记。使用这些名称,标志和品牌并不意味着被认可。 所有摄影图像由格芯公司的Nitin Kulkarni提供。
格芯宣布推出45nm射频SOI技术来推动5G移动通信 February 21, 20172017年2月21日 优化后的射频特色功能为5G智能手机及基站毫波的波束赋形提供高性能方案 加利福尼亚州圣何塞2017年2月21日 — 今天,格芯宣布了其45纳米射频SOI(45RFSOI)产品的正式投放,使得格芯成为第一家为未来5G基站与智能手机,以及下一代毫米波波束赋形提供300毫米射频硅设计方案的晶圆制造商。 格芯的45RFSOI产品是公司最先进的射频SOI技术。包括了厚铜层和增强LNA、交换器和功率放大器在射频上性能的电介质,后端线(BEOL)特殊功能为波束赋形的前端模块(FEM)特别优化了此项技术。SOI的本质特征结合射频为核心的功能,为下一代射频与毫米波应用提供了可能性,也为网络宽带近地(LEO)卫星和5G FEM推开了大门。 快速崛起的5G和毫米波市场将寻求在无线电技术、低功率集成毫米波无线电前端、天线相位阵列子系统以及高性能无线收发器方面的创新。正当原始设备制造商向自己的智能手机植入更多射频功能的时候,新的高速网络标准诞生了,最先进的设备仪器将为新运行模式提供更多的射频电路支持。这包括了支持低延迟和高全方位有效辐射功率的芯片、支持全方位覆盖和持续连接性强的高分辨率天线。 为获取GHz下设备运行的先进的功率处理,45RFSOI利用了大于40欧姆-厘米的基底阻值来增加无源器件的品质因素,降低了寄生电容、最小化相位与电压振幅的不一致。此技术支持24GHz到100GHz带宽波谱下的毫米波操作,比4G操作频率高5倍。 “Skyworks很高兴能与格芯合作推动毫米波方案的创新。”Skyworks Solution.Inc首席技术官Peter Gammel说道,“以45RFSOI制程为例,格芯在先进晶圆制造厂技术上的领先优势,使Skyworks可以为5G市场带来革命性的射频方案,同时也更加推动高度 集成射频前端在进化的毫米波应用中的使用。” “5G有望在下一个十年能成为世界统治级的移动通讯标准,为移动、数十亿字节数据传输率、安全、低延迟、网络遍及性和高服务品质(QoS)树立新的模范。”视频业务部高级副总裁Bami Bastani说道,“利用长久的SOI领先技术和大批量制造优势,我们对于发布最先进的射频SOI技术非常兴奋,这将在5G设备和网络的崛起中扮演重要角色。” 格芯的45RFSOI技术利用了部分耗尽式SOI技术基础,此技术从2008年始已投入大批量生产。先进的45RFSOI技术由位于纽约州东费什基尔的300毫米生产线制造,将为该行业内如此高速发展的市场提供足够的空间。 制程设计工具(PDK)现已发售。客户现可优化自己的芯片设计,开发独特方案,并能追求5G射频前端和毫米波相位阵列应用的高性能。 了解更多关于格芯RFSOI方案,请联系格芯销售代表或登录: www.globalfoundries.com. 关于格芯 格芯是提供全方位服务的领先半导体晶圆制造商,为世界上最具创新意识的科技公司提供独特的设计,开发和制造服务。格芯的生产制造业务遍布全球三大洲。格芯使技术和系统转型成为可能,并且帮助客户拥有塑造市场的力量。 格芯是Mubadala Development Company旗下公司。欲了解更多信息,请访问公司官方网站 https://www.globalfoundries.com。
GLOBALFOUNDRIES Announces Availability of 45nm RF SOI to Advance 5G Mobile Communications February 21, 2017Optimized RF features deliver high-performance solutions for mmWave beam forming applications in 5G smartphones and base stations Santa Clara, Calif., February 21, 2016 – GLOBALFOUNDRIES today announced the availability of its 45nm RF SOI (45RFSOI) technology offering, making GF the first foundry to announce an advanced, 300mm RF silicon solution to support next generation millimeter-wave (mmWave) beam forming applications in future 5G base stations and smartphones. GF’s 45RFSOI offering is the company’s most advanced RF SOI technology. The technology is optimized for beam forming front-end modules (FEMs), with back-end-of-line (BEOL) features including thick copper and dielectrics that enable improved RF performance for LNAs, switches and power amplifiers. The intrinsic characteristics of SOI combined with RF-centric features enable next-generation RF and mmWave applications, including internet broadband low earth orbit (LEO) satellites and 5G FEMs. The fast emerging 5G and mmWave markets will require innovations in radio technologies, including low power, integrated mmWave radio front ends, antenna phased array subsystems, and high performance radio transceivers. As OEMs integrate more RF content into their smartphones and new high-speed network standards are introduced, state-of-the-art equipment will require additional RF circuitry to support newer modes of operation. This includes chips that support low latency, higher EIRP, and high resolution antenna scanning for ubiquitous coverage and continuous connectivity. For improved power-handling benefits for devices operating in the GHz frequency range, 45RFSOI incorporates a substrate resistivity of greater than 40 ohm-cm that maximizes the quality factor for passive devices, reduces parasitic capacitances and minimizes disparity in phase and voltage swing. The technology supports operation in mmWave spectrum from 24GHz to 100GHz band, 5x more than 4G operating frequencies. “Skyworks is pleased to be collaborating with GF to drive innovation in millimeter wave solutions,” said Peter Gammel, chief technology officer for Skyworks Solutions, Inc. “GF’s leadership in advanced foundry technology, as exemplified by the 45RFSOI process, is enabling Skyworks to create RF solutions that will revolutionize emerging 5G markets and further advance the deployment of highly integrated RF front-ends for evolving mmWave applications.” “5G is expected to become the dominant worldwide mobile communications standard of the next decade and will usher in a new paradigm in mobility, multi-GBps data rates, security, low latency, network availability and high quality of service (QoS),” said Bami Bastani, senior vice president of RF Business Unit at GF. “Utilizing our long history of SOI leadership and high-volume manufacturing, we are excited to release our most advanced RF SOI technology that will help play a critical role in bringing 5G devices and networks to reality.” GF’s 45RFSOI technology leverages a partially-depleted SOI technology base that has been in high-volume production since 2008. The advanced 45RFSOI technology is manufactured at the GF’s 300mm production line in East Fishkill, N.Y. and will provide the industry ample capacity to address this high growth market. Process design kits are available now. Customers can now start optimizing their chip designs to develop differentiated solutions for customers seeking high performance in the RF front end of 5G and mmWave phased array applications. For more information on GF’s RF SOI solutions, contact your GF sales representative or go to www.globalfoundries.com. About GF GF is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Contact: Erica McGillGF(518) 795-5240[email protected]
格芯继续扩大产能以满足全球客户需求 February 9, 20172017年2月9日 格芯公司在美国,德国,中国和新加坡增加投资,用于提高其产能。 加利福尼亚州圣克拉拉市, 2017年2月9日 格芯公司今天宣布计划扩张其在全球的制造基地,以满足日益增长的客户对全面和差异化技术组合的需求。该公司将继续对其现有的美国和德国最先进的晶圆厂投入资金。同时,公司计划扩大在中国的业务(在成都新建立一座晶圆厂),并增加新加坡方面在主流技术上的产能。 “我们将继续投资于扩大产能和技术提升,用以满足全球客户的需求”,格芯的 CEO Sanjay Jha说。 “我们看到客户对我们的主流和前沿技术的有着巨大需求,这些需求包括从我们世界级连接设备的RF-SOI平台,到我们在最前沿领域的FD-SOI和FinFET产品规划。这些新增的投资将使我们能够扩大现有的晶圆生产,并通过在成都方面建立的伙伴合作关系来扩大格芯在中国的业务。” 在美国,格芯计划在纽约的Fab 8晶圆厂将14nm FinFET的产能再增加20%,将于2018年初拥有新的产能。这一扩张的基础是在过去8年中,格芯在美国的四个地区投资了大约130亿美元,并且创造了9000个直接工作岗位和15,000个相关工作岗位。纽约将继续保持其在7nm和极紫外(EUV)光刻领先技术开发的中心地位,并计划在2018年第二季度实现7nm的生产。 在德国,格芯计划在德累斯顿的Fab 1晶圆厂增加22FDX®22nm FD-SOI产能,以满足物联网(IoT),智能手机处理器,汽车电子设备以及其他由电池供电的无线连接应用的需求。到2020年,该晶圆厂的产能将增长40%。德累斯顿将继续其FDX技术开发的中心的地位。格芯在德累斯顿的工程师们正在开发公司的下一代12FDX™技术,第一批产品预计将在2018年中期开始生产。 在中国,格芯和成都市建立了合作伙伴关系,并将和成都方面在当地共同建立一座晶圆厂。该合作计划将会建立一个300mm晶圆厂,以满足高速增长的中国半导体市场需求,和全球客户对22FDX不断增长的需求。晶圆厂将在2018年开始生产主流制程的产品,然后专注于制造格芯的商业化的22FDX制程产品,预计量产将会从2019年开始。 在新加坡,格芯将会在300mm晶圆厂的将40nm的产量增加35%,同时在200mm生产线上实现更多的180nm生产。同时,该公司还将增加新的产能来生产业界领先的RF-SOI技术产品。 高通全球业务部的高级副总裁陈文华表示:“格芯与高通在多个制程节点方面已经有多年的合作关系,”我们很高兴看到格芯在差异化的技术和产能扩大方面进行进一步的投资,用以支持高通在一系列的集成电路领域中实现下一波的创新。” Rockchip首席执行官Min Li表示:“铸造厂合作伙伴关系对于我们从竞争激烈的移动SoC市场中脱颖而出至关重要。” “我们很高兴看到格芯将其创新的22FDX技术带入中国,并进行产量和产能方面的投资用以支持中国的无晶圆半导体产业的增长。” 联发科联合首席运营官Joe Chen说:“随着我们的客户对移动体验越来越强的需求,我们对优秀的生产制造合作伙伴的需求比往任何时候都要大。”“我们很高兴有像格芯这样的合作伙伴投资于我们所需要的全球化产能,用以提供从网络,互联,到物联网的强大而高效的移动技术。” 关于格芯 格芯是提供全方位服务的领先半导体晶圆制造商,为世界上最具创新意识的科技公司提供独特的设计,开发和制造服务。格芯的生产制造业务遍布全球三大洲。格芯使技术和系统转型成为可能,并且帮助客户拥有塑造市场的力量。 格芯是Mubadala Development Company旗下公司。欲了解更多信息,请访问公司官方网站 https://www.globalfoundries.com。 联系人: Jason Gorss 电话:(518)698-7765 [email protected]
GLOBALFOUNDRIES Expands to Meet Worldwide Customer Demand February 9, 2017Company invests for capacity growth in the United States, Germany, China and Singapore Santa Clara, Calif., February 9, 2017 – GLOBALFOUNDRIES today announced plans to expand its global manufacturing footprint in response to growing customer demand for its comprehensive and differentiated technology portfolio. The company is investing in its existing leading-edge fabs in the United States and Germany, expanding its footprint in China with a fab in Chengdu, and adding capacity for mainstream technologies in Singapore. “We continue to invest in capacity and technology to meet the needs of our worldwide customer base,” said GF CEO Sanjay Jha. “We are seeing strong demand for both our mainstream and advanced technologies, from our world-class RF-SOI platform for connected devices to our FD-SOI and FinFET roadmap at the leading edge. These new investments will allow us to expand our existing fabs while growing our presence in China through a partnership in Chengdu.” In the United States, GF plans to expand 14nm FinFET capacity by an additional 20 percent at its Fab 8 facility in New York, with the new production capabilities to come online in the beginning of 2018. This expansion builds on the approximately $13 billion invested in the United States over the last eight years, with an associated 9,000 direct jobs across four locations and 15,000 jobs within the regional ecosystem. New York will continue to be the center of leading-edge technology development for 7nm and extreme ultraviolet (EUV) lithography, with 7nm production planned for Q2 2018. In Germany, GF plans to build up 22FDX® 22nm FD-SOI capacity at is Fab 1 facility in Dresden to meet demand for the Internet of Things (IoT), smartphone processors, automotive electronics, and other battery-powered wirelessly connected applications, growing the overall fab capacity by 40 percent by 2020. Dresden will continue to be the center for FDX technology development. GF engineers in Dresden are already developing the company’s next-generation 12FDX™ technology, with customer product tape-outs expected to begin in the middle of 2018. In China, GF and the Chengdu municipality have formed a partnership to build a fab in Chengdu. The partners plan to establish a 300mm fab to support the growth of the Chinese semiconductor market and to meet accelerating global customer demand for 22FDX. The fab will begin production of mainstream process technologies in 2018 and then focus on manufacturing GF’s commercially available 22FDX process technology, with volume production expected to start in 2019. In Singapore, GF will increase 40nm capacity at its 300mm fab by 35 percent, while also enabling more 180nm production on its 200mm manufacturing lines. The company will also add new capabilities to produce its industry-leading RF-SOI technology. “GF has had a strong foundry relationship with Qualcomm Technologies for many years across a wide range of process nodes,” said Roawen Chen, senior vice president, QCT global operations, Qualcomm Technologies, Inc. “We are excited to see GF making these new investments in differentiated technology and expanding global capacity to support Qualcomm Technologies in delivering the next wave of innovation across a range of integrated circuits that support our business.” “Collaborative foundry partnerships are critical for us to differentiate ourselves in the competitive market for mobile SoCs,” said Min Li, chief executive officer of Rockchip. “We are pleased to see GF bringing its innovative 22FDX technology to China and investing in the capacity necessary to support the country’s growing fabless semiconductor industry.” “As our customers increasingly demand more from their mobile experiences, the need for a strong manufacturing partner is greater than ever,” said Joe Chen, co-chief operating officer of MediaTek. “We are thrilled to have a partner like GF that invests in the global capacity we need to deliver powerful and efficient mobile technologies for markets ranging from networking and connectivity to the Internet of Things.” ABOUT GF GF is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. GF is owned by Mubadala Development Company. For more information, visit https://www.globalfoundries.com. Contacts: Jason GorssGF(518) 698-7765[email protected]
Rambus Introduces High Bandwidth Memory PHY on GLOBALFOUNDRIES FX-14™ ASIC Platform using 14nm LPP Process Technology February 8, 2017SUNNYVALE, Calif. – February 7, 2017 – Rambus Inc. (NASDAQ: RMBS) today announced the availability of its High Bandwidth Memory (HBM) Gen2 PHY developed for GLOBALFOUNDRIES high-performance FX-14TM ASIC Platform. Built on the GLOBALFOUNDRIES 14nm FinFET (14LPP) process technology, the Rambus HBM PHY is aimed at networking and data center applications and designed for systems that require low latency and high bandwidth memory. This PHY is fully compliant with the JEDEC HBM2 standard and supports data rates up to 2000 Mbps per data pin, enabling a total bandwidth of 256 GB/s to meet the needs of today’s most data-intensive tasks. “Data center needs are continuously changing and we are at the forefront of delivering memory interface technology designed to meet today’s most demanding workloads,” said Luc Seraphin, senior vice president and general manager of the Rambus Memory and Interfaces division. “Through our collaboration with GLOBALFOUNDRIES, we are delivering a comprehensive and robust solution for high-performance data center and networking applications. Our HBM offering will allow data center solution developers to bring high performance memory closer to the CPU, thus reducing latency and improving the system throughput.”
Rambus公司在格芯FX-14™ASIC平台上使用14nm LPP制程技术推出高带宽内存PHY February 7, 2017SUNNYVALE, Calif. – February 7, 2017 – Rambus Inc. (NASDAQ: RMBS) today announced the availability of its High Bandwidth Memory (HBM) Gen2 PHY developed for GLOBALFOUNDRIES high-performance FX-14TM ASIC Platform. Built on the GLOBALFOUNDRIES 14nm FinFET (14LPP) process technology, the Rambus HBM PHY is aimed at networking and data center applications and designed for systems that require low latency and high bandwidth memory. This PHY is fully compliant with the JEDEC HBM2 standard and supports data rates up to 2000 Mbps per data pin, enabling a total bandwidth of 256 GB/s to meet the needs of today’s most data-intensive tasks.
Peregrine Semiconductor公司推出具有业界最佳RonCoff性能的下一代技术平台 January 25, 2017SAN DIEGO – Jan. 25, 2017 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® 12 technology platform. Now in production, this next-generation RF SOI platform boasts the industry’s lowest RONCOFF performance level of 80 fs—a 25-percent improvement over the last generation. To develop the 300 mm UltraCMOS 12 platform, Peregrine collaborated with GLOBALFOUNDRIES, a leading full-service semiconductor foundry.