Fab 8 Update: 14nm Creating and Capturing Value in the Ecosystem August 18, 2016In our journey at Fab 8, we’ve made great strides. Last year, we crossed a significant milestone – moving from construction to full-scale production, and driving to ramp the early-access version of our 14nm FinFET technology (14LPE) to volume production. This year we have driven a steady march of execution with our performance-enhanced 14LPP technology. We kicked off the year with the exciting news that our 14nm technologies will be fueling some of the most powerful compute and graphics applications, with AMD’s new lineup of discrete graphic processors. Continuing this momentum, we delivered strong technical results by reaching mature yields in high volume production on multiple products, introducing several new products for major customers—including complex chips with very large die—and achieving a 100 percent track record of yielding first-time-right silicon and aggressively ramping production to support product launches. It is our relentless focus on execution that is now allowing our customers to differentiate their products, and to bring them to market on time. Another great example is the latest news from AMD, who recently gave a performance preview of its next-generation “Zen” processor core. Just like AMD’s newly launched Polaris graphics chips, this processor is built on GLOBALFOUNDRIES’ 14LPP process technology. It is the powerful combination of AMD’s design expertise and GF’s 14nm FinFET technology that allows Zen to deliver a landmark increase in processor performance over previous generations. I am pleased to report that customer traction remains strong across a number of segments, with more than 20 active engagements in the mobility, consumer electronics, and high-performance computing sectors. And the interest is not just from traditional foundry customers, but also from companies that are looking to take advantage of the capabilities provided by our FX-14™ ASIC offering for cloud networking, wireless base station, compute, and storage applications. Looking ahead, we are committed to delivering leading-edge technology platforms, while enhancing our 14nm FinFET technology, to enable new opportunities and secure a strong foundation for future success, including 7nm next generation technology.
Packaging Takes Center Spot on Innovation Stage August 11, 2016By Dave Lammers Packaging has emerged as one of the semiconductor industry’s most potent forms of innovation. As classical (geometric) scaling has become more difficult, various “equivalent scaling” innovations have stepped up to the plate, notably 193nm immersion lithography, strained silicon, high-k/metal gate, finFETs, fully depleted SOI, and vertical NAND. Now it is packaging’s turn, and that puts the spotlight on experts such as Dave McCann, the vice president of packaging research and development at GLOBALFOUNDRIES. In an interview at his office in Malta, N.Y., McCann said more customers are turning to packaging innovations. “In all application spaces, customers are, more than ever before, integrating multiple chips in one package to address scaling limitations,” he said. For high-bandwidth applications such as servers and networking, McCann said GF is the only foundry to have 32nm TSVs in high-volume production. GF and Micron Technology have worked together on Hybrid Memory Cube (HMC) products, with GF creating the TSV-enabled logic layer which is stacked with Micron’s DRAM chips. “We are getting a lot of customer requests for 2.5D design, which take advantage of our experience in ASICs plus memory and high-speed Serdes. Most of these are on silicon interposers, on which we create high density traces to interconnect the ASIC and memory, so that customers achieve very high bandwidth products.” RF and IoT innovations are also driven by multi-chip applications, utilizing chips from different GF fabs and nodes. This enables use of chips at the most cost efficient node rather than forcing integration and suboptimum costs, he added. One intriguing R&D thrust for some RF and IoT applications is to use glass substrates, instead of silicon, which can be too lossy. “We believe we can create very dense interconnects, and get rid of all of the passives, using through-glass vias. Products could become much thinner,” McCann said. Photonics is another important area. The goal is to bring photonic signals directly to the module, instead of stopping at the board or backplane. For upper-end mobile and other markets, McCann said “wafer-level fan out is a terrific technology first for enabling more IO. Later we will see it used also for integrating multiple chips, starting with the memory and apps processor.” High density fan-out applications will cost more than the low cost substrate-based packages they will replace, however. Thin glass and FO-WLP allow multiple chips to be placed very close together, providing for a much smaller footprint, thinner profile, and higher performance. The profile is thinner because the laminate substrate is eliminated. And McCann noted these technologies are “particularly interesting for RF and IoT, because of the low loss for high frequency signals.” “The lowest cost WLFO supply chain will utilize OSATs for what they do best. We do not want to do what an OSAT can do just as well, or better. Especially in the mainstream technology areas, OSATs can offer their solutions to many customers, more cheaply than we could internally,” McCann said. He added that this gives customers the flexibility to use the supply chain they want to use. “The combination of GF with IBM’s Microelectronics division brings new opportunities, including high-density stacking applications. Being the only Foundry with HVM experience on high-density 3D TSV in logic, we bring credibility to the marketplace,” McCann said. In addition to TSV’s in 3D, GF designs and develops 2.5D silicon interposer products in-house for volume manufacturing at OSATs, “providing the best combination of design skills with a low-cost production path.” “GF is also working on low-cost alternative memory technologies that will scale with new silicon nodes at no added layer cost and technologies for use in multiple product technologies,” McCann said. GF portfolio scales across both 2.5D as well as 3D packaging solutions Industry analysts said they are keeping a close eye on the foundry’s packaging skills. Dick James, senior fellow at ChipWorks (Ottawa) said GF has an opportunity to further leverage the through-silicon via and interposer technology developed within IBM Microelectronics over the last decade. James noted that the recently released executive summary of the International Technology Roadmap for Semiconductors (ITRS) emphasized the need to integrate heterogeneous ICs in system-in-package solutions. Putting together high-bandwidth memory with graphics processors is a particularly important area going forward, James said, one that will take advantage of the interposer experience at the GF Fishkill, N.Y. fab. McCann added that this also will build on GF’s expertise in large thin die stacking. Jan Vardaman, president of the Austin, Texas-based packaging consultancy TechSearch International, said her firm is seeing increased uses of silicon interposers for high performance applications. “The use of a silicon interposer allows the use of a heat spreader on the top to help remove heat,” she noted. The use of wafer-level fanout packaging is also bringing a lot of infrastructure changes, Vardaman said, starting with IC/package co-design. Thus far, most application processors had been using a laminate substrate with flip chip interconnects. “With fan out WLP there is no need for a traditional laminate substrate with underfill. There are just a lot of infrastructure changes. All packaging can take place at the foundry, or at an OSAT which has a non-traditional OSAT assembly line,” Vardaman said. TechSearch is seeing a rapid adoption of FO-WLP beyond its widespread use in baseband processors, to RF transceivers and switches, power management integrated circuits (PMICs), automotive radar modules, near field communications (NFC), audio CODECs, security devices, and microcontrollers. GF collaborative supply chain model for 2D, 2.5D and 3D interconnect It’s no wonder, then, that customers are beating a path to Dave McCann’s office. McCann said “the number of customer engagements is multiplying,” attracted by the mix of OSAT partners and internally developed technologies. “GF does not ever plan to be an OSAT. But where the OSAT is not investing, where we can develop unique capabilities internally and gain a differentiating advantage, then we will partner with an OSAT to ramp that solution into production,” McCann said.
Silicon Photonics Inflection Point – It’s Not ‘If,’ It’s ‘When’ August 4, 2016Lately, there’s been a lot of buzz about silicon photonics in the data center industry. What’s it all about? The ever-expanding digital universe is being driven by cloud computing, mobile data, video streaming, and Internet-of-Things (IoT). Today, it’s estimated that by end of 2016, more than 6 zettabytes (i.e., the equivalent to about 250 billion DVDs) of data will be pushed through data centers and this number is expected to double by 2020. Moreover, networking bandwidth is doubling every two to three years, meaning that the number of links and each link data capacity is doubling – 10G is becoming 25G, and 40G ports are evolving to 100G ports. Moving all of this data within data centers (between the servers, switches, and storage) will require the widespread adoption of optical communications in order to scale with the growth in storage and computing demands. Using copper wires and fiber-optic technology to transmit the digital information will not keep pace with Moore’s Law. For a long time the photonics industry has been working on hybrid silicon technologies such as indium phosphide and silicon germanium. Fast forward to today: traditional CMOS fabs have been able to successfully manufacture Photonics IC and optical components without special processing steps and additional associated costs. Laser technology has also evolved different fiber technologies (SMF and MMF), supporting multiple wavelengths operating at 1550 and 1310 modes. For data centers, this helped create momentum for longer-reach, fiber-based connections to overcome copper’s limitation of 100 meters. The optical connections address the up to 2km reach within data centers and up to 80km outside data centers. Finally, technology analysts are projecting huge growth for SiPh-based modules, lasers, and fiber deployments, with two big markets driving the momentum: Datacom and Telecom, which are creating new markets in Data Center Interconnect (DCI), Metro Area, Content Delivery Network (CDN), and Basestation Front haul markets. Thanks to the hyper-growth in cloud data center traffic and the transition to 400G in the optical transport network, cloud data center giants are claiming that they will consume three-fourths of the optics in the entire world by next year. That means SiPh-based 100G ports will be ramping to multi-millions per year starting in 2017. Additionally, growth in the number of servers deployed has skyrocketed to more than 12M per year, and connectivity from rack-to-rack, rack-to- switches, and switch-to-switch are morphing to fiber-based connectivity in order to meet the networking bandwidth for power hungry data centers with lower total cost of ownership (TCO). This makes me eagerly optimistic about on-board optics, PSM4, QSFP56, and CFP4 type modules and form factors.kets driving the momentum; Datacom and Telecom, which are creating new markets in Data Center Interconnect (DCI), Metro Area, Content Delivery Network (CDN), and Basestation Front haul markets. Advancements in SiPh technology are essential for data center speed. A recent Cisco VNI update estimates that traffic between DCI to DCI is equal to the 1/7th of the traffic inside data center. What that mean is DCI to DCI and Metro links will be screaming for the bandwidth and dense connectivity of 100G links in the near future. For all the obvious reasons, SiPh chips are the right choice to lower the cost and power consumption, while improving bandwidth and capacity. Remarkably, Metro and CDN networks will become key enablers for advancing silicon photonics technology. Source: Cisco Global Cloud Index: 2014–2019 Content providers, network operators, and content delivery networks are seeing tremendous growth fueled by video streaming and overall broadband access and backhaul networks. This insatiable bandwidth need is driving video streaming networks to move to multi-100G based SiPh solutions. Especially in the long-haul, transport networks will see the need for multi-100G line rates, 400G, and up to 1.2Tera bits transponders and muxponders line cards. A few optical companies have started demonstrating 200G based solutions in this area, creating a great opportunity for optical component vendors, module manufacturers, and silicon photonic chip manufacturers. The growth ladder for silicon photonics is coming from the new 5th generation, 5G technology for cellular systems. The real question is: why is 5G driving silicon photonics’ inflection point? Wireless infrastructure pundits are claiming 5G is a panacea technology and it will support 10G/s bandwidth, 1000x capacity at lowest round trip latency ~1ms, in comparison with LTE technology. Top infrastructure vendors like Ericsson, Nokia and Huawei are vigorously looking for new architectures to fulfill the 5G dream with bandwidth requirements at the lowest TCO. Some key trends are large-scale array antenna and mm-wave communication with many remote radio heads (RRH) deployed in the field (small cells again!). In the front haul, all these remote radio heads are connected to a centralized radio access network (CRAN), referred to as the super basestation (should I say virtualized?). Since these basestations are isolated from each other, with kilometers of distance, they require a high speed, and reliable connectivity networking. This is where the need for OTN based Silicon Photonics connectivity comes in, when 5G basestations deployment ramps, infrastructure growth will explodes and China alone will have millions of ports and volumes with Silicon Photonics. But in reality, 5G deployments are bit far away, meaning they will probably not begin until 2018 and beyond (and more likely 2020+). But clearly 5G front haul architectures will propel the demand for various silicon photonics modules and chip sets. The progressive growth of the hyper-connected world is pushing photonics to an inflection point. Now, it’s not if but when? Starting with cloud data centers, DCI-to-DCI, Metro and long-haul transport networks, and 5G basestations will enable the momentum and drive the demand for silicon photonics based solutions and deployments ports. As we approach 2017, we should see an inflection point for data center OEMs and telecom operators. Ultimately, all that demand for high speed, high bandwidth data in telecommunications and data centers will propel ecosystem growth and silicon photonics technologies.. To learn more about hypercloud data center solutions with breakthrough semiconductor technologies, download this recent presentation or contact your GLOBALFOUNDRIES sales representative.
ASICs – The Need for Speed in Automotive IVI Development July 26, 2016By Ian Williams More and more cars today offer In-Vehicle-Infotainment (IVI) systems typically embedded in the rear-seat or dashboard. These integrated systems deliver entertainment, multimedia, and driver information in a single platform, which usually has three delivery formats; docking for smartphone integration, a fully enclosed platform tightly linked to vehicle development, and aftermarket to address vehicle upgrades. This growing phenomenon can create product life-cycle revenue streams as well as a path to remain engaged with customers over time. Nowadays, car buyers factor more than just a vehicle’s driving performance into their buying decision. With the growing dependence we all place on our smartphones, and how they keep us connected to the rest of the world, seamless integration of mobile devices into an automobile plays an important and influential role in how we evaluate new cars. Non-traditional automotive suppliers like Apple and Google clearly see the connected car as a huge opportunity. Early signs of their increasing interest and participation in this market are evident by Apple CarPlay and Android Auto standards that enable IVI systems to act as displays and controllers for iOS and Android enabled smartphones. While cars are much more than smartphones on wheels, having all of our favorite smartphone functions and apps available to us while driving is a compelling value proposition. In automotive IVI systems semiconductor IPs such as USB, DDR/LPDDR, MIPI-D PHY, WiFi and Bluetooth are most suitable for integration with high-performance CPU and GPU cores to deliver the required system audio, video, and driver information functionality. There is also an increasing requirement to have all of these blocks integrated into a single chip. In addition to IVI systems, Advanced Driver Assistance Systems (ADAS) are another fast growing automotive application. Designers of SoCs for ADAS applications require a combination of high-performance and power-efficient IP functions in order to deliver a complete solution. Here multimedia interfaces like HDMI will enable high-definition displays, and interface connectivity can be offered via IPs that supports PCIe and SATA protocols. According to a new report published by Allied Market Research, global IVI market is expected to reach $33.8 billion by 2022. The future growth of this segment will be fueled by new technology and growing demand from new markets for more sophisticated IVI systems in lower priced vehicles. For example, in the chart below, are a few key emerging trends for vehicle connectivity that could influence future architecture of IVI systems. Source: Frost & Sullivan Even though there are automotive industry alliances such as the GENIVI Alliance, a non-profit organization committed to driving the broad adoption of an IVI open-source development platform, a key driver for automakers is still product differentiation for both software and hardware. Not only in the infotainment sector, but also the Human Machine Interface (HMI) functionality such as WiFi connectivity, text-to-speech, 3D graphics, and voice and gesture recognition will also be major drivers of product differentiation. HMI requires modular, scalable system solutions that must be taken into consideration as early as the systems semiconductor specification stage. Additionally, IVI systems will become another platform for content availability and consumption. Customers will expect to have seamless access to content from their IVI platform. For vehicle manufacturers this is critically important as they search for solutions that will lower costs and complexity, while at the same time the need to innovate and integrate new technologies will continue to gain ground for in-vehicle systems. Along with mounting complexity, automotive manufacturers are also faced with compressed time-to-market cycles, reduced from 5 to 2 years, coupled with the pressure for mid-life-cycle platform refresh options. For an automaker, having an ASIC development partner capable of providing increased levels of integration with higher levels of functionality, while at the same time driving down production costs is a major asset. An automotive supplier must be able to deliver a product that can withstand the rigors of the automotive industry qualification standards such as AEC-Q100 and ISO/TS 16949. AEC-Q100 is a failure mechanism-based stress test qualification requirement for packaged ICs destined for automotive applications and most automobile manufacturers will require compliance even for in-cabin applications. Partnering with GLOBALFOUNDRIES, the leading automotive foundry who’s been supplying automotive grade wafers for more than 10 years provides designers with the confidence of automotive qualification expertise. The ability to deliver all of this emerging functionality into a compact form factor drives the need for increased ASIC integration in future IVI systems. Moving forward, there is also the potential for ADAS and IVI systems to merge as improved display technologies and capabilities focus on reducing driver visual distraction, pushing the need to have related content integrated onto the same screen including the capability for voice and gesture recognition. More frequently, to keep up with the constant pace of change in automotive IVI system functionality, designers traditionally look to suppliers who have access to an extensive library of automotive IC design IP, the capability to execute, the flexibility to offer cost-effective solutions, and the ability to meet the stringent automotive industry quality requirements. But the key differentiator moving forward will be the ability to achieve fast development cycles. INVECAS was formed to offer semiconductor IPs, Design Realization and Silicon Realization services exclusively for customers developing products based on GF’s process technologies. The way INVECAS adds the most value to our automotive customers is to help them with their ASIC needs. Being able to integrate their ASIC requirements and deliver an automotive qualified production part is how we move from vendor to partner. This is why partnering with INVECAS and GF on your next automotive project is important to help drive down the cost of various electronic modules and subsystems.
From Blue to Orange: One Year Later June 29, 2016When I sat down next to a yield engineer at lunch during a recent semiconductor manufacturing conference, we started talking. He said he worked at the Malta fab of GLOBALFOUNDRIES but had spent most of his career at IBM’s Fishkill fab, coming over last July 1 when GF formally acquired IBM Microelectronics. I asked him about the transition, whether the IBMers – especially those with some years at IBM — had felt anxieties about moving into a new organization. “Actually, it was the opposite,” he replied quickly. “At IBM there was a feeling that semiconductor manufacturing was no longer central to the organization’s key purpose. That went on for some time. So when we moved to GF, it was like ‘now we know what we are doing.’ We were finally in an organization where making semiconductors is the main purpose.” Some of the top managers in New York and Vermont express similar sentiments about a transition process that involved 5,000 people and two fabs. Geoff Akiki now runs the mask organization at GF’s Burlington, Vt. site, but earlier he was an Integration Executive tasked with bringing IBM Microelectronics into the GF fold. The integration team created a simple color code: Red for people within IBM Microelectronics, Orange for GF people, and Blue for those who would remain with IBM, largely to manage the foundry relationship with GF. “There was some trepidation, by both IBMers and GF people. Some of the GF people wondered how this would affect their roles in the expanded organization. For the most part, the Red people were hugely excited, because they felt that GF was doing chip manufacturing for a living and had strategies that were better than what they had seen for 10 years.” If GF brought resources and focus, IBM brought world-class engineers, an ASIC business, and radio frequency (RF) technologies, based on both RF-SOI and SiGe processes, a valuable asset in this era of mobility. Tom Caulfield, general manager of Fab 8 in Malta, N.Y., said about 600 people came to Malta after the formal integration date of July 1, 2015. However, prior to that a fairly large number of engineers had left IBM, seeing the handwriting on the wall, to apply for positions at GF. When Caulfield took on his current job in 2014, he hired what he calls “A players” from various companies, including Intel and Samsung, and large numbers of experienced IBMers. “At IBM, microelectronics was seen as a cost center, a means to an end, but not The Business. These guys were chomping at the bit to go where making semiconductors is the real game.” Bringing 5,000 people – about 3,000 from the Burlington fab and another 2,000 who worked at Fishkill, N.Y. – into GF was a large task. To prepare, Akiki said the integration team created 14 work streams, and organized meetings where as many as 200 people would participate. Two key decisions eased the transition process. The most important was that there would be essentially no layoffs. GF CEO Sanjay Jha had laid down a philosophy of ‘disturb as little as possible’ during the integration. Bringing essentially everyone over from IBM reduced anxiety levels considerably, Akiki said. Secondly, GF decided to acquire the two IBM manufacturing sites (and the facilities support staff) at Burlington and Fishkill in their entirety, obviating any need to partition the properties. (IBM kept the packaging technology center in Bromont, Canada). IP Integration At the recent 2016 Design Automation Conference (DAC) in Austin, one speaker noted that when Company A acquires Company B, typically the first to be laid off are the EDA engineers at Company B. With them goes the historical knowledge of what intellectual property (IP) is owned by Company B, and how those IP cores can be used by the design teams. Akiki said from the outset intellectual property was seen as “a large part of the value” of the IBM integration deal. “We bragged about the number of patents we picked up. But we knew that IP often languishes, and we set a specific objective to integrate both the people and the IP files.” A major effort went into making sure that all of the IP had been categorized, so that GF could “eventually declare we have received the key deliverables.” Gary Patton became the chief technology officer at GF as part of the integration, and it is probably fair to say that his technology development organization has benefited the most from the deal. One consequence of Malta being a “green field” site, Caulfield noted, is that it takes time to build up the talent. That was especially true in technology development (TD), with Patton adding that maintaining a TD schedule “has been a key knock” in the past. For the 10/7nm development program, Patton said more than 50 percent of the people are from IBM, adding that the 10/7nm development team draws on experience from the 14nm team. Caulfield emphasized that Malta has benefited from the “added scale” of ASIC business that came to GF as part of the IBM deal. IBM engineers had developed high-performance ASIC cores, such as a 56 gigabit/s Serdes core, that Caulfield said are not available from other foundries. “We are refreshing our ASICs platform at 14nm, and I can tell you that I entertain about one new customer at week at this site, with at least half of them being ASIC customers.” I asked about the challenges which remain, a year after the initial integration. The most important challenge is to further knit together the two human organizations, making sure that the people with two or three decades of service during their careers at IBM share their knowledge with the engineers at Malta, and vice versa. As Caulfield said, “Our job is to get more intermixing going on, to get more balance. We don’t want to bring in all of these great technologists and then not leverage their skills.” Patton, who earlier managed IBM’s Semiconductor Research and Development Center (SRDC), promises to take advantage of the talent he now manages at GF. “In the 10 years I led the SRDC, I can tell you we always had more performance than Intel. The industry has been heavily focused on mobile, and now customers are not happy with the performance improvements they are seeing from our competitors, compared with 16nm. They are looking for more performance. And guess what? We just brought in a specialty team here at GF that knows how to do performance.”
Executive Perspective: The Big Shrink May 27, 2016By Gregg Bartlett When we in the semiconductor industry talk about shrinking, most of the time we mean device scaling. But another type of shrinking is taking place, too, and I want to talk about its implications for the industry. I’m referring to the shrinking number of companies at the top of the market, resulting from the continuing consolidation of fabless companies. Since the beginning of 2014, mergers and acquisitions valued at more than $150 billion have taken place in our industry, nearly 10 times the yearly average. These have been driven by a combination of low interest rates, saturation in the mobility space, slowing growth rates and an overall squeeze on profitability This wave of corporate tie-ups is leaving a huge amount of disruption in its wake for foundries and foundry customers alike, as newly integrated companies seek to exercise their larger-scale purchasing power, consolidate their supply chains, simplify their roadmaps and drive a multitude of new integration synergies. Disruption is also occurring because of new architectures and more complex packaging technologies, which are making it harder to distinguish where wafer processing ends and packaging begins. As a result, we are seeing a growing trend by system houses to engage directly with foundries for complete turnkey solutions, from fab to test to packaging to finished goods inventory – these may even involve design centers along with the complete supply chain. Foundries face a number of critical requirements and challenges as a result of these trends. One is that large-scale foundry operations are more important than ever, as the largest customers simplify their supply chains and ask their foundry partners to do more. The fact that margins are under great pressure also drives the need for scale, and for continuing cost reductions. Moreover, decision-making has become a higher-stakes process than ever before as a result of the fewer number of customers and foundries at the leading edge. GLOBALFOUNDRIES is pursuing a multi-faceted approach to meet these challenges. With regard to scale, we are building the capability in our Dresden fab for hundreds of thousands of 22FDX® FD-SOI wafer starts annually, in a facility that has the ultimate capacity for more than a million wafer starts a year overall. Also, the acquisition of IBM’s semiconductor operations has given us more capacity, and more supply for customers. With the two additional fabs – one in Burlington, Vermont and the other in East Fishkill, New York – we can expand our capacity in RF SOI as well as other processes. And, on the ASIC side we have a very strong 14nm ASIC business and IP portfolio, which directly connects our foundry to end-market system houses. Meanwhile, in collaboration with select design partners, equipment and material suppliers and OSAT partners, our offerings span the range of design-fab-turnkey solutions. And I’m proud to say there is no better example of our end-market expertise – that is, our ability to engage architects – than our work to ensure that viable, cost-effective solutions exist for the forthcoming move to 5G cellular networks. In the end, the industry is changing so swiftly and deeply that nobody can be certain how it will evolve. But one thing is for certain: We at GF are planning and implementing solutions that address as broad a swath of our customers’ current and future requirements as needed, regardless of how things may evolve.
RF Driving Next-Gen Processes May 16, 2016By Dave Lammers GLOBALFOUNDRIES is expanding its RF capabilities in two important ways: moving RF SOI manufacturing to larger wafers and a new technology platform at its East Fishkill 300mm fab. Secondly, RF IP development plays a key role in the 22FDX® platform.</em> Successful semiconductor companies are facing an interesting challenge: they must be able to create solutions for the fast-growing automotive and Internet of Things markets by combining three technologies that, historically, often have been separated: processors and other digital cores; memories, and RF. Subramani Kengeri, vice president of the CMOS Platforms business unit at GF, said “going forward, the SoCs for every emerging market will have a radio. With the 22FDX platform we have a cost-effective solution, with RF and analog on the same technology as digital.” RF and Digital Convergence Fully depleted SOI has advantages for on-chip RF. The planar transistors in the 22FDX technology have less variability than finFETs on a bulk silicon substrate, where the ability to control both the height and width of the fin is challenging. “FD-SOI technology provides better transistor-matching characteristics. Because 22FDX is planar, with much lower variability, that helps in building cleaner RF and analog alongside high-performance digital,” Kengeri said. To accelerate the 22FDX rollout, GF contracted with INVECAS, a Santa Clara-based IP vendor, for 22nm libraries and higher-level IP offerings that are exclusive to GF silicon. Other eco-system partners are engaged in the development of silicon-proven WiFi and Bluetooth cores as a priority. “Over 45 customers are in various stages of engagement and lead customers have taped out test chips. All the top five EDA providers have announced support for 22FDX. We are on track to qualifying the technology later this year,” Kengeri said, with high-volume production to quickly follow. RF SOI Moving to 300mm GF also is working on developing its next-generation RF SOI process, which continues its leadership in RF front-end silicon technologies. The foundry recently reached an important milestone in shipping its 20 billionth RF SOI chip. As the performance requirements for RF SOI technologies become more challenging and the demand continues to increase as a function of smartphone radio complexity, GF is working to address the next wave of innovation in mobile RF fronts. Enabling manufacturing on 300mm wafers is an important component of that strategy. Peter Rabbeni, senior director of the RF business unit, said “we have already proven that 300mm can provide a number of additional benefits besides capacity enhancement. The availability of new materials and smaller lithography are some of the capabilities of 300mm manufacturing that benefit device performance.” One of the key differentiators of RF SOI is that circuits are built on an engineered substrate — much different than the SOI substrate used for digital applications such as lowpower microcontrollers — which has characteristics that are better suited for high-performance RF. The substrate characteristics support the high isolation and low harmonic response needed in RF front end circuits, preventing radio interference and preserving signal fidelity, Rabbeni explained. GF worked closely together with substrate suppliers to develop an RF SOI technology which meets the stringent harmonic and linearity requirements that today’s RF front end switches and tuners need. LTE communications and carrier aggregation require next-generation RF SOI with improved insertion loss and linearity. Carrier aggregation, for example, introduces data rate expansion methods which binds two or more carriers to a single data stream. This introduces certain complexities in the RF path that need to be accounted for to insure any nonlinear products that are generated by this operation are minimized. “Another key trend we are observing is the integration of more digital content. There is significant adoption of the MIPI interface for RF front end control, for example, and this is now becoming a larger percentage of the die,” he said. Beyond the needs of the LTE standard, Rabbeni said the next-generation RF SOI process will set the foundation for the 5G cellular standard. Though the final 5G standard has yet to be ratified, customers are already developing 5G demonstration systems to intersect the 2018 and 2020 Olympics. Millimeter wave frequency operation seems best suited to deliver on the promises of 5G, including low latency, spectral efficiency, and high cell edge data rates. “If this is the direction the industry takes, more integration will be required than today’s RF SOI technologies can achieve,” Rabbeni said. Customers may integrate the beam formers, power amplifiers, phase-shifters, LNA’s (low noise amplifiers), and even some portions of the transceiver into a single chip under high-speed digital control. “For certain, going forward there is an expectation our customers will want significantly more integration with RF SOI. We are leveraging much of the learning that has been achieved on our 45SOI technology to help make this leap forward,” he said. In the end, it all comes down to the enablement which helps designers get to market quickly with their product. “We spend significant effort and take a lot of pride in providing very accurate models and high quality process design kits (PDKs), so that customers can be confident that what they simulate is exactly how the silicon performs when it comes out of the fab. We have decades of manufacturing experience in RF silicon technologies. There are not many large foundries that can make that claim.” These growing market opportunities have led to “a big focus on the transformation of our manufacturing capacity. We have made some very focused decisions on capacity additions for RF SOI and silicon germanium to make sure we can meet the anticipated demand. Expansion to meet the coming demand fromChina is a big focus for us,” Rabbeni said. As China’s cellphone users move to 4G- and LTE-capable handsets, and as the 5G standard begins to take hold, the demand for RF SOI and SiGe-based chips could expand quickly, just as it did several years ago. Watching the 300mm Move Joanne Itow, managing director at Semico Research (Phoenix), said she is watching closely to see how the transition to 300mm RF SOI wafers works out at GF and other foundry vendors. When IBM’s Burlington operation developed a silicon-based path to RF front end ICs, “the switch to RF SOI and away from GaAs was pretty quick, as the benefits were obvious. The foundries that have the ability to move to 300mm wafers have a leg up. Just having that option is a real plus,” Itow said. Itow said she is watching to see how the SOI wafer suppliers, primarily Soitec (Grenoble, France), respond with a reliable supply of 300mm RF SOI wafers, and how the foundries and customers take advantage of the larger wafer sizes. “We are looking at the next move to bringing products on to 300mm capacity. What we are being told by the foundries sounds good, and it sounds as if GF is in the right place, getting ready for the right markets. Now we will have to wait and see if it will work out or not,” she said.
To Bias or Not to Bias, That Is the Question May 12, 2016By Joerg Winkler One of the essential building blocks of applications in mobile, pervasive and intelligent computing space is a high-performance, low-power processor. For these applications, GLOBALFOUNDRIES 22FDX® platform with 22nm fully depleted silicon-on-insulator (FD-SOI) technology offers an optimal combination of performance, low power and cost. One big advantage of 22FDX is the ability to optimize performance and power by applying forward and reverse body bias to the transistors. The challenge for our design team was to successfully apply body-bias to enhance PPA of a quad-core ARM Cortex-A17 processor implemented in 22FDX FD-SOI technology. In GF’s webinar, Implementing an ARM® Cortex®-A17 Processor in 22FDX Technology, we examine a digital implementation flow with industry-standard EDA tools, the application of body-bias for specific design intents and power scenarios, provide analysis of physical architecture details and initial PPA results of an ARM Cortex sub-module. The concept of an optimizable technology platform holds great potential, but adopting a new platform often means adopting a new design flow as well. And engineers know that with new design flows, the road from concept to reality can be bumpy unless the implementation details are well thought out. Fortunately, the GF 22FDX FD-SOI design flow is architected to be very similar to the existing bulk flow. With support from all of the major EDA vendors, the 22FDX flow uses various design techniques (implant-aware, source/drain-aware, double patterning, UPF support) which have been deployed on earlier nodes. This case uses the Cadence tool suite from initial design creation to signoff. We detail the implementation of an ARM Cortex processor as a reference design, highlighting how to obtain a wide range of PPA results by applying both forward and reverse body bias to different domains in a floorplan. With this easily tunable tradeoff, you can effectively balance between higher performance and lower power to meet the overall performance specs and power budget of a SoC design. GF design IP for the ARM Cortex-A17 processor includes standard cell base libraries, power management kit and cache memory kit, each with support for body-biasing. The 22FDX platform is ready to adopt for new designs, with the starter kit of 22FDX digital design flow available now. To replay the webinar, click here. More information including videos and white papers are available at GF.com/22FDX.
FD-SOI: An Enabler of Disruption April 21, 2016 For years, Dan Hutcheson has stayed on the sidelines as the industry buzz has grown around FD-SOI technology. “I’ve been pretty quiet, because I never bought the cost argument. I never thought the decision would be swung by a couple of mask layers,” said Hutcheson, who is the CEO and Chairman of analyst firm VLSI Research. “But last year when I saw 22FDX® from GLOBALFOUNDRIES, I saw for the first time some game-changing features. Power didn’t matter five years ago, but now it’s a very power-stingy world. Designers are differentiating on power, not necessarily performance. The real-time tradeoffs in power offered by FD-SOI began to look pretty exciting to me.” Hutcheson wanted to get validation for his increasing interest in FD-SOI, so with the help of GF, he set out to conduct a survey of key influencers and decision-makers in the chip design ecosystem. In the following video, Hutcheson presents the key findings from his in-depth interviews, where he asked participants about some of the key technical and business reasons to design with FD-SOI, how the technology is positioned alongside industry FinFET offerings, and other questions designed to answer the overarching question: “Is FD-SOI disruptive, or just another process?” The answer? “No. It’s not disruptive, but it’s an enabler of disruption,” Hutcheson concluded. “The Internet of Things (IoT) is the most disruptive force out there. It will be as disruptive as the smartphone, and I believe that FD-SOI technology will be a critical enabler of this disruption.” To view Dan Hutcheson’s FD-SOI presentation, click here.
Girls in STEM: A Leap for (Wo)Mankind April 20, 2016By Gwendolyn Bluemich When I was a little girl, my father gave me a chemistry set for my 13th birthday.Chemistry?I thought. What am I going to do with THAT? … But my dad is a scientist. A very important one, at that. So, naturally, he wanted his daughter to both appreciate and explore the wonders of a field that is increasingly gaining in attention: STEM (Science, Technology, Engineering & Math). And, gradually, I did. Unfortunately, these days, not many girls are blessed with dads like mine. Granted, I ended up going a slightly different academic route than he had probably hoped for – studying not a science, per se, but rather, pursuing the “softer” fields of economics and public policy. Yet, here I am, several years later, reveling in the excited faces of middle school girls goofing around in cleanroom “bunny” suits, creating squishy slime out of borax, and oohing and awwing at the site of LEGO robots at our recent GLOBALGirls event. Bringing more women into the STEM fold is important for several reasons: For one, they add diversity – of thought, of communication, and of leadership styles. They bring fresh perspectives and new approaches to problem solving – all key attributes that manufacturers are looking for. In addition, they help businesses be more successful – as much as 35 percent more, according to a recent study. Without women, we would not have computers (shout out to Ada Lovelace and her Analytical Machine); we would not have made many advances in physics and chemistry (thank you, Marie Curie); and we probably would not have been able to claim victory in World War II had it not been for Rosie the Riveter and all of those brave women who supported the U.S. effort at the frontlines of manufacturing. By embracing gender diversity, we win: we boost productivity and creativity while, at the same time, driving economic growth. And women win, too! According to the White House, women in STEM jobs benefit from a 33 percent higher salary compared to those in non-STEM occupations – and they face smaller wage gaps relative to men. In addition, STEM careers offer women the opportunity to be involved at the leading edge of innovation and technology. I may not have studied physics (like my dad did) or material science (like my female colleagues did), but here I am today working for a high-tech company to help develop the future talent pipeline. The added bonus? As manager of strategic education and workforce development initiatives at GLOBALFOUNDRIES, I get to inspire young women in the same way my dad inspired me 20 years ago, and has continued to since then. Initiatives like STEP Ahead attempt to tackle the gender gap by promoting the role of women in manufacturing. The Manufacturing Institute has recognized GF’s Deb Leach, senior director for Procurement, and Amelia Folkins. 300mm Manufacturing engineer, among 130 Emerging Leaders and Honorees at the 2016 STEP Ahead Awards. But women used to be girls once, too! So how do we make chemistry sets cool again to attract more girls to STEM fields? Whether you are a mother, a father, an educator, or a business professional, make a difference today. Help “EMPOWER” a young woman by: Educating yourself, your students, your employees, and your community about the opportunities available in STEM today. Mentoring a student; serving as a positive role model and helping instill in her the confidence she needs to believe in herself, so that she, too, can make a difference in the world. Partnering with organizations already involved in Girls in STEM initiatives to maximize the extent and impact of your outreach. Organizing an open house or Manufacturing Day (MFG DAY) at your school or facility to celebrate women in STEM and inspire the next generation of leaders. Washing away the implicit bias that results in so many lost opportunities to recognize, embrace, and celebrate the potential and the talents that girls contribute to STEM. Extending your reach into the community by developing your own STEM ambassadors program; and Re-evaluating your initiatives, always. Identify what worked and what could be done better. Continue to search for new approaches and for new solutions – there is always room for improvement. The opportunities to make a difference are endless. These actions may seem like a small feat but they can mean the world to (wo)mankind. Feeling inspired? Looking for more ideas? Feel free to contact me at [email protected]