Introducing GF’s gallium nitride (GaN) solutions As silicon and CMOS technologies approach their performance limits, novel materials such as gallium nitride (GaN) unlock the potential to deliver more efficient power supplies and meet demanding high-performance radio frequency (RF) and millimeter-wave (mmWave) applications. By harnessing GaN’s wide bandgap advantages, high electron mobility and low capacitance, GF’s GaN solutions deliver cutting-edge performance, integration and thermal management to empower next-generation consumer and industrial RF and power applications. Power GaN: smaller, faster, cooler GF’s Power GaN technologies are positioned to lead the charge in the next-generation of power solutions by enabling smaller, more efficient power supplies – from fueling AI-driven data centers, fast charging and renewable energy to smart mobile devices. Wide bandgap advantage for reduced losses – lower output charge, zero reverse recovery charge and lower gate charge for reduced energy loss and peak switching speeds Differentiated integration – GF offers monolithic integration on GaN and the option of co-packaging GaN with our leading BCD solutions to develop compact, efficient and reliable power solutions U.S. manufacturing – our Burlington, Vermont facility is the only 200mm U.S.-based facility focused on GaN-on-silicon production, positioning GF to deliver scalable, standards-compliant solutions Faster GaN adoption – GF offers application-level reliability validation and design services to accelerate time-to-market so you can develop your GaN solution at the speed you need Powering the future of wireless with RF GaN GF’s RF GaN technologies deliver high-power, high-efficiency RF solutions at smaller form factors. Designed for harsh conditions, our RF GaN solutions are engineered to support high-frequency operation with excellent linearity and ruggedness across high-performance RF circuits, power amplifiers, SATCOM systems and high-frequency RF applications. High RF performance and power density – excellent gain and efficiency across L through Ka bands for high-performance, power-optimized solutions for D-mode and E-mode devices Best-in-class RF models – backed by our leading RF experience, featuring full PDKs for streamlined design and time-to-market GaN-on-Si integration – fabricated using CMOS-compatible processes, empowering integration with silicon-based electronics for scalable manufacturing Proven support – manufactured at Burlington, Vermont facility, with robust end-to-end services and design support so you can ramp to production with confidence Ready to power your next innovation with GaN? Contact Us
